JP2015153958A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 246
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 196
- 239000010432 diamond Substances 0.000 claims abstract description 196
- 239000012535 impurity Substances 0.000 claims abstract description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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Abstract
【解決手段】実施形態の半導体装置は、p型の第1のダイヤモンド半導体層と、第1のダイヤモンド半導体層上に配置され、p型不純物濃度が第1のダイヤモンド半導体層のp型不純物濃度より低く、表面が酸素終端されたp型の第2のダイヤモンド半導体層と、第2のダイヤモンド半導体層上に配置され、表面が酸素終端された複数のn型の第3のダイヤモンド半導体層と、第2のダイヤモンド半導体層上および複数の第3のダイヤモンド半導体層上に配置され、第2のダイヤモンド半導体層および複数の第3のダイヤモンド半導体層との接合がショットキー接合である第1の電極と、を備える。
【選択図】図1
Description
本実施形態の半導体装置は、p型の第1のダイヤモンド半導体層と、第1のダイヤモンド半導体層上に配置され、p型不純物濃度が第1のダイヤモンド半導体層のp型不純物濃度より低く、表面が酸素終端されたp型の第2のダイヤモンド半導体層と、第2のダイヤモンド半導体層上に配置され、表面が酸素終端された複数のn型の第3のダイヤモンド半導体層と、第2のダイヤモンド半導体層上および複数の第3のダイヤモンド半導体層上に配置され、第2のダイヤモンド半導体層および複数の第3のダイヤモンド半導体層との接合がショットキー接合である第1の電極と、を備える。
本実施形態の半導体装置は、複数のn型の第3のダイヤモンド半導体層16の形状が、第1の実施形態の複数のn型の第3のダイヤモンド半導体層16の形状と異なっていること以外は、第1の実施形態と同様である。ここで、第1の実施形態の半導体装置と重複する点については、記載を省略する。
第1の実施形態の構造の半導体装置100を製造した。
第2の実施形態の構造の半導体装置100を製造した。
12 第1のダイヤモンド半導体層
14 第2のダイヤモンド半導体層
16 第3のダイヤモンド半導体層
18 第1の電極
20 第2のダイヤモンド半導体層の表面
22 第3のダイヤモンド半導体層の側面
24 第2のダイヤモンド半導体層の底面
26 溝
28 第3のダイヤモンド半導体層の表面
100 半導体装置
Claims (7)
- p型の第1のダイヤモンド半導体層と、
前記第1のダイヤモンド半導体層上に配置され、p型不純物濃度が前記第1のダイヤモンド半導体層のp型不純物濃度より低く、表面が酸素終端されたp型の第2のダイヤモンド半導体層と、
前記第2のダイヤモンド半導体層上に配置され、表面が酸素終端された複数のn型の第3のダイヤモンド半導体層と、
前記第2のダイヤモンド半導体層上および前記複数の第3のダイヤモンド半導体層上に配置され、前記第2のダイヤモンド半導体層および前記複数の第3のダイヤモンド半導体層との接合がショットキー接合である第1の電極と、
を備えることを特徴とする半導体装置。 - 前記複数の第3のダイヤモンド半導体層のn型不純物がP(リン)であり、リン濃度が1×1015atoms/cm3以上5×1018atoms/cm3以下であることを特徴とする請求項1記載の半導体装置。
- 前記複数の第3のダイヤモンド半導体層が、順方向バイアスの印加で空乏化されることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記第2のダイヤモンド半導体層の表面が{100}面から±10度以内の面方位を有し、前記複数の第3のダイヤモンド半導体層の側面が{110}面から±10度以内の面方位を有することを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の電極が、Ni(ニッケル)、Al(アルミニウム)、Ti(チタン)、Mo(モリブデン)、Ru(ルテニウム)、WC(タングステンカーバイド)、Au(金)、Pd(パラジウム)、Ir(イリジウム)、Pt(白金)およびRh(ロジウム)からなる第1の群から選択される少なくとも一種類の金属を備えることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1のダイヤモンド半導体層に電気的に接続される第2の電極をさらに備えることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体装置。
- p型の第1のダイヤモンド半導体層上に、p型不純物濃度が前記第1のダイヤモンド半導体層のp型不純物濃度より低いp型の第2のダイヤモンド半導体層をエピタキシャル成長によって形成し、
前記第2のダイヤモンド半導体層上に溝を形成し、
前記溝内に複数のn型の第3のダイヤモンド半導体層をエピタキシャル成長によって形成し、
前記第1のダイヤモンド半導体層に電気的に接続される第2の電極を形成し、
前記第2のダイヤモンド半導体層表面と前記複数のn型の第3のダイヤモンド半導体層表面とを酸素終端し、
前記第2のダイヤモンド半導体層上および前記複数の第3のダイヤモンド半導体層上に、前記第2のダイヤモンド半導体層および前記複数の第3のダイヤモンド半導体層との接合がショットキー接合である第1の電極を形成することを特徴とする半導体装置の製造方法。
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JP2014027936A JP6203074B2 (ja) | 2014-02-17 | 2014-02-17 | 半導体装置およびその製造方法 |
EP15153086.2A EP2908349B1 (en) | 2014-02-17 | 2015-01-29 | Semiconductor device and method of manufacturing the same |
CN201510071076.8A CN104851920B (zh) | 2014-02-17 | 2015-02-11 | 半导体装置以及其制造方法 |
US14/619,565 US9331150B2 (en) | 2014-02-17 | 2015-02-11 | Semiconductor device and method of manufacturing the same |
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CN109037356A (zh) * | 2018-10-15 | 2018-12-18 | 无锡新洁能股份有限公司 | 一种高耐压的碳化硅肖特基二极管及其制造方法 |
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FR3004853B1 (fr) * | 2013-04-22 | 2016-10-21 | Centre Nat Rech Scient | Procede de fabrication d'une diode schottky sur un substrat en diamant |
RU174126U1 (ru) * | 2016-12-27 | 2017-10-03 | Федеральное государственное бюджетное научное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГБНУ ТИСНУМ) | Алмазный диод с барьером шоттки |
EP3379580A1 (en) * | 2017-03-22 | 2018-09-26 | Evince Technology Ltd | Diamond semiconductor device |
JP6703683B2 (ja) * | 2017-12-20 | 2020-06-03 | 国立研究開発法人産業技術総合研究所 | 単結晶ダイヤモンドおよびそれを用いた半導体素子 |
US10497817B1 (en) * | 2018-07-09 | 2019-12-03 | Wisconsin Alumni Research Foundation | P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers |
US10685716B1 (en) * | 2019-04-11 | 2020-06-16 | Yield Microelectronics Corp. | Method of fast erasing low-current EEPROM array |
US11380763B2 (en) * | 2019-04-29 | 2022-07-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Contact structures for n-type diamond |
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