WO2008136259A1 - ダイヤモンド半導体素子におけるショットキー電極及びその製造方法 - Google Patents

ダイヤモンド半導体素子におけるショットキー電極及びその製造方法 Download PDF

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Publication number
WO2008136259A1
WO2008136259A1 PCT/JP2008/057283 JP2008057283W WO2008136259A1 WO 2008136259 A1 WO2008136259 A1 WO 2008136259A1 JP 2008057283 W JP2008057283 W JP 2008057283W WO 2008136259 A1 WO2008136259 A1 WO 2008136259A1
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WO
WIPO (PCT)
Prior art keywords
thin film
schottky electrode
metal selected
diamond
scattered
Prior art date
Application number
PCT/JP2008/057283
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English (en)
French (fr)
Inventor
Kazuhiro Ikeda
Hitoshi Umezawa
Shinichi Shikata
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to US12/597,578 priority Critical patent/US8237170B2/en
Priority to JP2009512914A priority patent/JP5344484B2/ja
Publication of WO2008136259A1 publication Critical patent/WO2008136259A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/0435—Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6603—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　ダイヤモンドへの密着性は良く、外部からの機械的圧力の不均一さにより接触面が剥離してしまわない、ダイオード作成のプロセスにおいて、歩留まりを悪くしない、電流電圧特性の劣化を起こしにくいダイヤモンド半導体におけるショットキー電極及びその製造方法を提供する。 　基板上のダイヤモンド表面に形成された島状に点在するパターン Pt族合金薄膜があり、Pt族合金がPt５０～９９．９とRu及び又はIr０．１～５０質量％含んだPt族合金であること、又は基板上のダイヤモンド表面に形成された島状に点在するパターンPt又はPdから選ばれる金属薄膜があり、各Pt又はPdから選ばれる金属薄膜のすべてに、Pt又はPdから選ばれる金属薄膜上にRu, Ir, Rhから選ばれる金属薄膜が設けられた島状に点在するパターン電極からなるショットキー電極及びその製造方法。
PCT/JP2008/057283 2007-04-27 2008-04-14 ダイヤモンド半導体素子におけるショットキー電極及びその製造方法 WO2008136259A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/597,578 US8237170B2 (en) 2007-04-27 2008-04-14 Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device
JP2009512914A JP5344484B2 (ja) 2007-04-27 2008-04-14 ダイヤモンド半導体素子におけるショットキー電極及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007117815 2007-04-27
JP2007-117823 2007-04-27
JP2007-117815 2007-04-27
JP2007117823 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008136259A1 true WO2008136259A1 (ja) 2008-11-13

Family

ID=39943376

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057283 WO2008136259A1 (ja) 2007-04-27 2008-04-14 ダイヤモンド半導体素子におけるショットキー電極及びその製造方法

Country Status (3)

Country Link
US (1) US8237170B2 (ja)
JP (1) JP5344484B2 (ja)
WO (1) WO2008136259A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009252776A (ja) * 2008-04-01 2009-10-29 National Institute Of Advanced Industrial & Technology バリアハイト制御をしたダイヤモンド電子デバイス
CN109585570A (zh) * 2018-12-19 2019-04-05 吉林麦吉柯半导体有限公司 肖特基二极管、nipt95合金及肖特基二极管的制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211292B2 (en) * 2011-04-14 2019-02-19 Sage Wise 66 (Pty) Ltd Electrical conductor
JP6203074B2 (ja) * 2014-02-17 2017-09-27 株式会社東芝 半導体装置およびその製造方法
US10700165B2 (en) 2016-06-17 2020-06-30 Adamantite Technologies LLC Doped diamond SemiConductor and method of manufacture using laser abalation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161759A (ja) * 1987-12-17 1989-06-26 Idemitsu Petrochem Co Ltd ショットキーダイオードおよびその製造方法
JPH01246867A (ja) * 1988-03-28 1989-10-02 Sumitomo Electric Ind Ltd ショットキー接合
JPH03110824A (ja) * 1989-09-26 1991-05-10 Idemitsu Petrochem Co Ltd ダイヤモンド半導体素子およびその製造法
JPH07130981A (ja) * 1993-11-01 1995-05-19 Canon Inc 半導体電子放出素子およびその形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0248965U (ja) * 1988-09-30 1990-04-05
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0572163A (ja) * 1990-11-30 1993-03-23 Mitsui Mining Co Ltd 半導体式ガスセンサー
JPH07311171A (ja) * 1992-12-22 1995-11-28 Mitsui Mining Co Ltd 半導体式ガスセンサ
KR100388272B1 (ko) * 2000-12-26 2003-06-19 삼성에스디아이 주식회사 티알에스 소자
JP2002324849A (ja) * 2001-04-24 2002-11-08 Mitsubishi Materials Corp 白金−ルテニウム複合電極膜及びその製造方法
CN1331235C (zh) * 2002-06-18 2007-08-08 住友电气工业株式会社 n型半导体金刚石的制造方法及半导体金刚石
JP2004235080A (ja) * 2003-01-31 2004-08-19 Kobe Steel Ltd 燃料電池用電極及びその製造方法並びに燃料電池
JP2006352028A (ja) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd 整流素子およびその製造方法
JP4734667B2 (ja) * 2005-09-27 2011-07-27 独立行政法人産業技術総合研究所 ダイヤモンド素子及びその製造方法
JP4817813B2 (ja) * 2005-11-15 2011-11-16 株式会社神戸製鋼所 ダイヤモンド半導体素子及びその製造方法
US20090140263A1 (en) * 2006-05-10 2009-06-04 Hitoshi Umezawa Method for diamond surface treatment and device using diamond thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161759A (ja) * 1987-12-17 1989-06-26 Idemitsu Petrochem Co Ltd ショットキーダイオードおよびその製造方法
JPH01246867A (ja) * 1988-03-28 1989-10-02 Sumitomo Electric Ind Ltd ショットキー接合
JPH03110824A (ja) * 1989-09-26 1991-05-10 Idemitsu Petrochem Co Ltd ダイヤモンド半導体素子およびその製造法
JPH07130981A (ja) * 1993-11-01 1995-05-19 Canon Inc 半導体電子放出素子およびその形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009252776A (ja) * 2008-04-01 2009-10-29 National Institute Of Advanced Industrial & Technology バリアハイト制御をしたダイヤモンド電子デバイス
CN109585570A (zh) * 2018-12-19 2019-04-05 吉林麦吉柯半导体有限公司 肖特基二极管、nipt95合金及肖特基二极管的制造方法

Also Published As

Publication number Publication date
US20100117098A1 (en) 2010-05-13
JP5344484B2 (ja) 2013-11-20
JPWO2008136259A1 (ja) 2010-07-29
US8237170B2 (en) 2012-08-07

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