JP2013062365A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
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- JP2013062365A JP2013062365A JP2011199657A JP2011199657A JP2013062365A JP 2013062365 A JP2013062365 A JP 2013062365A JP 2011199657 A JP2011199657 A JP 2011199657A JP 2011199657 A JP2011199657 A JP 2011199657A JP 2013062365 A JP2013062365 A JP 2013062365A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 224
- 150000001875 compounds Chemical class 0.000 title claims abstract description 208
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000004913 activation Effects 0.000 claims abstract description 23
- 239000000969 carrier Substances 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 212
- 238000000034 method Methods 0.000 description 28
- 230000015556 catabolic process Effects 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000002109 crystal growth method Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】化合物半導体装置の一態様には、基板1と、基板1の上方に形成された化合物半導体層2と、が設けられている。化合物半導体層2には、第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域2aと、第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、第1の領域2aよりも低濃度で含有する第2の領域2bと、が設けられている。
【選択図】図1
Description
Si系半導体装置では、n型の領域及びp型の領域の形成に際して不純物の活性化の制御が容易である。これは、Si基板等に不純物をイオン注入し、アニールを行えば、容易に不純物を活性化させてキャリアを発生させることができるためである。そして、活性化の制御が容易であるため、Si基板の表面に平行な方向(面内方向)に種々の不純物活性領域を設けることが可能である。
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係る化合物半導体装置を示す断面図である。
次に、第2の実施形態について説明する。図3は、第2の実施形態に係る化合物半導体装置を示す断面図である。また、図4は、第2の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第3の実施形態について説明する。図6は、第3の実施形態に係る化合物半導体装置を示す断面図である。
次に、第4の実施形態について説明する。図7は、第4の実施形態に係る化合物半導体装置を示す断面図である。また、図8は、第4の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第5の実施形態について説明する。図10は、第5の実施形態に係る化合物半導体装置を示す断面図である。また、図11は、第5の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第6の実施形態について説明する。第6の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えたPFC(Power Factor Correction)回路に関する。図13は、第6の実施形態に係るPFC回路を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えた電源装置に関する。図14は、第7の実施形態に係る電源装置を示す結線図である。
次に、第8の実施形態について説明する。第8の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えた高周波増幅器に関する。図15は、第8の実施形態に係る高周波増幅器を示す結線図である。
第1の実験では、第2の実施形態及び図16に示す第1の参考例について、ドレイン−ソース間の電圧Vdsとドレイン電流Idとの関係、及びドレイン−ソース間に電圧を印加し続けた場合に破壊が起こるまでの時間tについて調べた。これらの結果を図17に示す。第1の参考例のキャリア高濃度領域112a及びキャリア低濃度領域112bの形成に当たっては、キャリア高濃度領域112a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、キャリア低濃度領域112b用のMgドープGaN層の形成、エッチング及び活性化アニールを行った。従って、不活性化領域は存在しない。また、絶縁膜21に代えて電子供給層と接するように絶縁膜121を形成した。
第2の実験では、第4の実施形態及び図18に示す第2の参考例について、アノード−カソード間の順電圧Vacとアノード電流Iaとの関係、及びアノード−カソード間に逆電圧を印加し続けた場合に破壊が起こるまでの時間tについて調べた。これらの結果を図19に示す。第2の参考例のキャリア高濃度領域142a及びキャリア低濃度領域142bの形成に当たっては、キャリア高濃度領域142a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、キャリア低濃度領域142b用のMgドープGaN層の形成、エッチング及び活性化アニールを行った。従って、不活性化領域は存在しない。また、絶縁膜51に代えて電子供給層と接するように絶縁膜151を形成した。
第3の実験では、第5の実施形態及び図20に示す第3の参考例について、オフ時のドレイン−ソース間電圧Vdsとドレイン電流Idとの関係について調べた。この結果を図21に示す。第3の参考例のキャリア高濃度領域172a及びチャネル領域の形成に当たっては、キャリア高濃度領域172a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、意図的なドーピングを行っていないi−GaN層172bをキャリア低濃度領域72bに代えて形成した。
基板と、
前記基板の上方に形成された化合物半導体層と、
を有し、
前記化合物半導体層は、
第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域と、
前記第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、前記第1の領域よりも低濃度で含有する第2の領域と、
を有することを特徴とする化合物半導体装置。
前記第1導電型のキャリアがホールであることを特徴とする付記1に記載の化合物半導体装置。
前記第1の不純物及び前記第2の不純物がMg又はCであることを特徴とする付記2に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するソース電極及びドレイン電極と、
前記第1の領域の上方に位置するゲート電極と、
を有し、
前記第2の領域は、平面視で前記ゲート電極と前記ドレイン電極との間に位置することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記第2の領域の上方に位置するフィールドプレート電極を有することを特徴とする付記4に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するアノード電極及びカソード電極と、
を有し、
前記第1の領域及び前記第2の領域は、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置し、第2導電型のキャリアを含む下部化合物半導体層と、
前記第1の領域の上方に位置するゲート電極と、
前記第2の領域の上方に位置するソース電極と、
前記第2の領域と前記ソース電極との間に位置し、第2導電型のキャリアを含む上部化合物半導体層と、
前記基板の下方に位置するドレイン電極と、
を有することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
付記1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
基板の上方に不純物を含有する化合物半導体層を形成する工程と、
前記化合物半導体層の第1の領域にレーザ光を第1の照射密度で照射することにより、当該第1の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
前記化合物半導体層の前記第1の領域とは異なる第2の領域にレーザ光を前記第1の照射密度とは異なる第2の照射密度で照射することにより、当該第2の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
を有することを特徴とする化合物半導体装置の製造方法。
前記第1導電型のキャリアがホールであることを特徴とする付記10に記載の化合物半導体装置の製造方法。
前記不純物がMg又はCであることを特徴とする付記11に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に電子走行層を形成する工程と、
前記電子走行層の上方に電子供給層を形成する工程と、
を有し、
更に、
前記電子走行層の上方にソース電極及びドレイン電極を形成する工程と、
前記第1の領域の上方にゲート電極を形成する工程と、
を有し、
前記第2の領域を、平面視で前記ゲート電極と前記ドレイン電極との間に位置させることを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
前記第2の領域の上方にフィールドプレート電極を形成する工程を有することを特徴とする付記13に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に電子走行層を形成する工程と、
前記電子走行層の上方に電子供給層を形成する工程と、
を有し、
更に、前記電子走行層の上方にアノード電極及びカソード電極を形成する工程を有し、
前記第1の領域及び前記第2の領域を、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置させることを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に第2導電型のキャリアを含む下部化合物半導体層を形成する工程を有し、
更に、
前記第1の領域の上方にゲート電極を形成する工程と、
前記第2の領域の上方に第2導電型のキャリアを含む上部化合物半導体層を形成する工程と、
前記上部化合物半導体層の上方にソース電極を形成する工程と、
前記基板の下方にドレイン電極を形成する工程と、
を有することを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
2:化合物半導体層
2a、12a、42a、72a:キャリア高濃度領域
2b、12b、42b、72b:キャリア低濃度領域
12、42、72:Mgドープ化合物半導体層
14、44:電子走行層
15、45:中間層
16、46:電子供給層
20g、80g:ゲート電極
20s、80s:ソース電極
20d、80d:ドレイン電極
40a:アノード電極
40c:カソード電極
74、76:n型GaN層
75:n-GaN層
Claims (10)
- 基板と、
前記基板の上方に形成された化合物半導体層と、
を有し、
前記化合物半導体層は、
第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域と、
前記第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、前記第1の領域よりも低濃度で含有する第2の領域と、
を有することを特徴とする化合物半導体装置。 - 前記第1導電型のキャリアがホールであることを特徴とする請求項1に記載の化合物半導体装置。
- 前記第1の不純物及び前記第2の不純物がMg又はCであることを特徴とする請求項2に記載の化合物半導体装置。
- 前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するソース電極及びドレイン電極と、
前記第1の領域の上方に位置するゲート電極と、
を有し、
前記第2の領域は、平面視で前記ゲート電極と前記ドレイン電極との間に位置することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 前記第2の領域の上方に位置するフィールドプレート電極を有することを特徴とする請求項4に記載の化合物半導体装置。
- 前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するアノード電極及びカソード電極と、
を有し、
前記第1の領域及び前記第2の領域は、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 前記基板と前記化合物半導体層との間に位置し、第2導電型のキャリアを含む下部化合物半導体層と、
前記第1の領域の上方に位置するゲート電極と、
前記第2の領域の上方に位置するソース電極と、
前記第2の領域と前記ソース電極との間に位置し、第2導電型のキャリアを含む上部化合物半導体層と、
前記基板の下方に位置するドレイン電極と、
を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
- 基板の上方に不純物を含有する化合物半導体層を形成する工程と、
前記化合物半導体層の第1の領域にレーザ光を第1の照射密度で照射することにより、当該第1の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
前記化合物半導体層の前記第1の領域とは異なる第2の領域にレーザ光を前記第1の照射密度とは異なる第2の照射密度で照射することにより、当該第2の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
を有することを特徴とする化合物半導体装置の製造方法。
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CN103000666B (zh) | 2015-09-16 |
CN103000666A (zh) | 2013-03-27 |
TW201314897A (zh) | 2013-04-01 |
TWI485849B (zh) | 2015-05-21 |
US20130062666A1 (en) | 2013-03-14 |
JP5739774B2 (ja) | 2015-06-24 |
KR101340126B1 (ko) | 2013-12-10 |
KR20130029007A (ko) | 2013-03-21 |
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