JP2013051383A5 - - Google Patents
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- Publication number
- JP2013051383A5 JP2013051383A5 JP2011209209A JP2011209209A JP2013051383A5 JP 2013051383 A5 JP2013051383 A5 JP 2013051383A5 JP 2011209209 A JP2011209209 A JP 2011209209A JP 2011209209 A JP2011209209 A JP 2011209209A JP 2013051383 A5 JP2013051383 A5 JP 2013051383A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- amount
- photoelectric conversion
- conversion element
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 18
- 229910052719 titanium Inorganic materials 0.000 claims 18
- 239000010936 titanium Substances 0.000 claims 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 12
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 239000011368 organic material Substances 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 238000003384 imaging method Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/245,603 US8994132B2 (en) | 2010-09-27 | 2011-09-26 | Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element |
| JP2011209209A JP5677921B2 (ja) | 2010-09-27 | 2011-09-26 | 光電変換素子の製造方法 |
| EP11182753.1A EP2434557B1 (en) | 2010-09-27 | 2011-09-26 | Photoelectric conversion element, solid-state imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element |
| CN201110289309.3A CN102420236B (zh) | 2010-09-27 | 2011-09-27 | 光电转换元件，固态成像元件，成像设备和用于制造光电转换元件的方法 |
| KR1020110097645A KR101884021B1 (ko) | 2010-09-27 | 2011-09-27 | 광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010216102 | 2010-09-27 | ||
| JP2010216102 | 2010-09-27 | ||
| JP2011169650 | 2011-08-02 | ||
| JP2011169650 | 2011-08-02 | ||
| JP2011209209A JP5677921B2 (ja) | 2010-09-27 | 2011-09-26 | 光電変換素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013051383A JP2013051383A (ja) | 2013-03-14 |
| JP2013051383A5 true JP2013051383A5 (enExample) | 2014-02-20 |
| JP5677921B2 JP5677921B2 (ja) | 2015-02-25 |
Family
ID=44719488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011209209A Active JP5677921B2 (ja) | 2010-09-27 | 2011-09-26 | 光電変換素子の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8994132B2 (enExample) |
| EP (1) | EP2434557B1 (enExample) |
| JP (1) | JP5677921B2 (enExample) |
| KR (1) | KR101884021B1 (enExample) |
| CN (1) | CN102420236B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
| KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| JP2017168806A (ja) * | 2015-12-21 | 2017-09-21 | ソニー株式会社 | 撮像素子、固体撮像装置及び電子デバイス |
| JP6576235B2 (ja) | 2015-12-21 | 2019-09-18 | 東京エレクトロン株式会社 | Ｄｒａｍキャパシタの下部電極およびその製造方法 |
| KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
| US10236461B2 (en) | 2016-05-20 | 2019-03-19 | Samsung Electronics Co., Ltd. | Organic photoelectronic device and image sensor |
| KR102605375B1 (ko) | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| US10522467B2 (en) * | 2016-07-06 | 2019-12-31 | Tokyo Electron Limited | Ruthenium wiring and manufacturing method thereof |
| JP6785130B2 (ja) * | 2016-07-06 | 2020-11-18 | 東京エレクトロン株式会社 | ルテニウム配線およびその製造方法 |
| KR102589215B1 (ko) | 2016-08-29 | 2023-10-12 | 삼성전자주식회사 | 유기 광전 소자, 이미지 센서 및 전자 장치 |
| KR102764011B1 (ko) | 2016-12-23 | 2025-02-05 | 삼성전자주식회사 | 전자 소자 및 그 제조 방법 |
| US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
| KR102653046B1 (ko) | 2017-12-28 | 2024-04-01 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 수광 소자 및 전자 기기 |
| JP6970808B2 (ja) * | 2018-03-12 | 2021-11-24 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ、化合物 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4968886A (en) * | 1989-08-30 | 1990-11-06 | Texas Instruments Incorporated | Infrared detector and method |
| JPH04213832A (ja) | 1990-12-11 | 1992-08-04 | Oki Electric Ind Co Ltd | 半田バンプ電極を有する半導体素子 |
| JPH11326038A (ja) | 1998-05-20 | 1999-11-26 | Dainippon Printing Co Ltd | 光センサーおよびその製造方法 |
| JP4213832B2 (ja) | 1999-02-08 | 2009-01-21 | 富士フイルム株式会社 | 有機発光素子材料、それを使用した有機発光素子およびスチリルアミン化合物 |
| US6597110B1 (en) * | 1999-05-13 | 2003-07-22 | The University Of Southern California | Titanium nitride anode for use in organic light emitting devices |
| JP4126810B2 (ja) | 1999-06-25 | 2008-07-30 | 富士電機ホールディングス株式会社 | 薄膜太陽電池の製造装置 |
| JP2005085933A (ja) | 2003-09-08 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 光センサ及びそれを用いた光論理素子並びに電子デバイス |
| JP2007273555A (ja) | 2006-03-30 | 2007-10-18 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2008072090A (ja) * | 2006-08-14 | 2008-03-27 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2008072589A (ja) | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | カラーイメージセンサ |
| JP2008072435A (ja) | 2006-09-14 | 2008-03-27 | Matsushita Electric Ind Co Ltd | イメージセンサ |
| US20080230123A1 (en) * | 2007-03-12 | 2008-09-25 | Fujifilm Corporation | Photoelectric conversion element and solid-state imaging device |
| JP4637196B2 (ja) | 2007-03-16 | 2011-02-23 | 富士フイルム株式会社 | 固体撮像素子 |
| JP5087304B2 (ja) * | 2007-03-30 | 2012-12-05 | 富士フイルム株式会社 | 固体撮像素子の製造方法 |
| US7923801B2 (en) | 2007-04-18 | 2011-04-12 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
| JP5171178B2 (ja) | 2007-09-13 | 2013-03-27 | 富士フイルム株式会社 | イメージセンサ及びその製造方法 |
| JP2009105336A (ja) * | 2007-10-25 | 2009-05-14 | Mitsubishi Chemicals Corp | 膜の製造方法、有機電子素子の製造方法及びナフタロシアニン膜 |
| JP2009182095A (ja) | 2008-01-30 | 2009-08-13 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| TWI613834B (zh) * | 2008-07-21 | 2018-02-01 | 量宏科技股份有限公司 | 用於安定、敏感性光檢測器的材料、製造設備與方法及由其等製成之影像感應器 |
| JP5453758B2 (ja) | 2008-10-09 | 2014-03-26 | コニカミノルタ株式会社 | 有機光電変換素子、太陽電池及び光センサアレイ |
| KR101064679B1 (ko) * | 2009-03-09 | 2011-09-15 | 울산대학교 산학협력단 | 투명전극 |
| JP2011071482A (ja) * | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡 |
| JP4802286B2 (ja) * | 2009-08-28 | 2011-10-26 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
| KR20130101036A (ko) * | 2010-09-27 | 2013-09-12 | 후지필름 가부시키가이샤 | 광전 변환 소자의 제조 방법, 고체 촬상 소자, 촬상 장치 |
-
2011
- 2011-09-26 EP EP11182753.1A patent/EP2434557B1/en active Active
- 2011-09-26 JP JP2011209209A patent/JP5677921B2/ja active Active
- 2011-09-26 US US13/245,603 patent/US8994132B2/en active Active
- 2011-09-27 CN CN201110289309.3A patent/CN102420236B/zh active Active
- 2011-09-27 KR KR1020110097645A patent/KR101884021B1/ko active Active
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