JP2012074702A5 - - Google Patents

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Publication number
JP2012074702A5
JP2012074702A5 JP2011210351A JP2011210351A JP2012074702A5 JP 2012074702 A5 JP2012074702 A5 JP 2012074702A5 JP 2011210351 A JP2011210351 A JP 2011210351A JP 2011210351 A JP2011210351 A JP 2011210351A JP 2012074702 A5 JP2012074702 A5 JP 2012074702A5
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JP
Japan
Prior art keywords
layer
dielectric
conductive layer
metal
oxygen
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JP2011210351A
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English (en)
Japanese (ja)
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JP5888916B2 (ja
JP2012074702A (ja
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Publication of JP2012074702A publication Critical patent/JP2012074702A/ja
Publication of JP2012074702A5 publication Critical patent/JP2012074702A5/ja
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Publication of JP5888916B2 publication Critical patent/JP5888916B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011210351A 2010-09-28 2011-09-27 金属−絶縁体−金属キャパシタおよびその製造方法 Expired - Fee Related JP5888916B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP10181359 2010-09-28
EP10181359.0 2010-09-28
US201161481393P 2011-05-02 2011-05-02
US61/481,393 2011-05-02

Publications (3)

Publication Number Publication Date
JP2012074702A JP2012074702A (ja) 2012-04-12
JP2012074702A5 true JP2012074702A5 (enExample) 2014-10-16
JP5888916B2 JP5888916B2 (ja) 2016-03-22

Family

ID=44677739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011210351A Expired - Fee Related JP5888916B2 (ja) 2010-09-28 2011-09-27 金属−絶縁体−金属キャパシタおよびその製造方法

Country Status (3)

Country Link
US (1) US9343298B2 (enExample)
EP (1) EP2434531B1 (enExample)
JP (1) JP5888916B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8835273B2 (en) * 2012-09-19 2014-09-16 Intermolecular, Inc. High temperature ALD process of metal oxide for DRAM applications
US9231046B2 (en) 2013-03-15 2016-01-05 Globalfoundries Inc. Capacitor using barrier layer metallurgy
US9647094B2 (en) 2013-08-02 2017-05-09 University Of Kentucky Research Foundation Method of manufacturing a semiconductor heteroepitaxy structure
JP6583014B2 (ja) 2016-01-22 2019-10-02 株式会社デンソー 半導体装置の製造方法
EP3660933A1 (en) * 2018-11-30 2020-06-03 IMEC vzw Structure for use in a metal-insulator-metal capacitor
CN110415974B (zh) * 2019-07-17 2021-04-02 南京大学 一种基于纳米叠层结构金属氧化物柔性电容器及其制备方法
US11038013B2 (en) * 2019-07-24 2021-06-15 International Business Machines Corporation Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor
EP3840073B1 (en) * 2019-12-18 2024-09-25 Imec VZW A method for manufacturing a magnetic structure for a magnetic device showing a giant vcma effect
US12094924B2 (en) 2021-07-06 2024-09-17 Samsung Electronics Co., Ltd. Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same
US12136517B2 (en) * 2021-07-08 2024-11-05 Taiwan Semiconductor Manufacturing Company Ltd. Capacitor structure and manufacturing method and operating method thereof
KR102883987B1 (ko) * 2021-11-09 2025-11-07 삼성전자주식회사 커패시터, 커패시터 제조 방법 및 커패시터를 포함하는 전자 장치
WO2025020652A1 (zh) * 2023-07-25 2025-01-30 深圳市昇维旭技术有限公司 电容器、存储器和存储器的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US6388285B1 (en) * 1999-06-04 2002-05-14 International Business Machines Corporation Feram cell with internal oxygen source and method of oxygen release
US6475854B2 (en) * 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
KR20030025672A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조방법
US20060151822A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan DRAM with high K dielectric storage capacitor and method of making the same
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
JP2010056392A (ja) * 2008-08-29 2010-03-11 Elpida Memory Inc キャパシタ用絶縁膜、キャパシタ素子、キャパシタ用絶縁膜の製造方法及び半導体装置
US20100072531A1 (en) * 2008-09-22 2010-03-25 Imec Method for Forming a Memory Cell Comprising a Capacitor Having a Strontium Titaniumoxide Based Dielectric Layer and Devices Obtained Thereof
US7939442B2 (en) * 2009-04-10 2011-05-10 Micron Technology, Inc. Strontium ruthenium oxide interface
WO2010141668A2 (en) * 2009-06-03 2010-12-09 Intermolecular, Inc. Methods of forming strontium titanate films

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