JP5888916B2 - 金属−絶縁体−金属キャパシタおよびその製造方法 - Google Patents
金属−絶縁体−金属キャパシタおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000003990 capacitor Substances 0.000 title description 20
- 229910052751 metal Inorganic materials 0.000 title description 20
- 239000002184 metal Substances 0.000 title description 20
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 77
- 238000002425 crystallisation Methods 0.000 claims description 36
- 230000008025 crystallization Effects 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 27
- 238000000231 atomic layer deposition Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 191
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 107
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 43
- 239000010936 titanium Substances 0.000 description 39
- 229910019897 RuOx Inorganic materials 0.000 description 35
- 238000002156 mixing Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000003949 trap density measurement Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000000560 X-ray reflectometry Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- AGNPPWAGEICIGZ-UHFFFAOYSA-N strontium tin Chemical compound [Sr].[Sn] AGNPPWAGEICIGZ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
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Description
・基板を準備するステップと、
・前記基板上に第1電気導電性層を設けるステップと、
・原子層堆積法によって、前記導電性層上に層のサブスタックを設けるステップであって、前記サブスタックの少なくとも一層はTiO2層であり、サブスタックの他層は、前記層のサブスタックの結晶化の際に、ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層であるステップとを含み、さらに、
・前記層のサブスタックを含む基板に熱処理を施し、前記第1導電性層上で、結晶化した誘電体層を得るステップ、および
・前記結晶化した誘電体層上に第2電気導電性層を設けるステップ、
または、
・前記層のサブスタック上に第2電気導電性層を設けるステップ、および
・前記層のサブスタックおよび前記第2導電性層を含む基板に熱処理を施し、前記第1導電性層上で、結晶化した誘電体層を得るステップを含む。
・原子層堆積法によって、前記第1導電性層上にTiO2から成る中間層を堆積するステップと、
・原子層堆積法によって、前記中間TiO2層上に、結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層を堆積するステップ。
・原子層堆積法によって、前記第1導電性層上に、結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層を堆積するステップと、
・原子層堆積法によって、前記誘電体材料層上に前記TiO2層を堆積するステップ。
・下部電極と、
・前記下部電極上に、立方晶ペロブスカイト構造を有する誘電体材料を含む誘電体層と、
・前記誘電体層上に、前記誘電体層のk値が50〜100であり、MIMキャパシタのEOTが0.35nm〜0.55nmである上部電極とを備える金属−絶縁体−金属(MIM)キャパシタに関する。
・下部電極と、
・前記下部電極上に、立方晶ペロブスカイト構造を有する誘電体材料を含む、または該誘電体材料で構成される誘電体層と、
・前記誘電体層上に、前記誘電体層のk値が50〜100であり、MIMキャパシタのEOTが0.35nm〜0.55nmである上部電極とを備える金属−絶縁体−金属(MIM)キャパシタに関する。
・基板を準備するステップと、
・前記基板上に第1導電性層、好ましくは金属層、または前記金属の酸化物に覆われた金属層を設けるステップと、
・ALDによって前記第1導電性層上に層のサブスタックを設けるステップであって、前記サブスタックの少なくとも一層はTiO2層であり、サブスタックの他の層は、前記層のサブスタックの結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層であるステップと、
・前記層のサブスタックを含む基板に熱処理を施し、第1導電性層上で結晶化した誘電体層を得るステップと、
・前記結晶化した誘電体層上に第2電気導電性層を設けるステップとを含む方法に関する。第1導電性層および第2導電性層自体は、導電性層のスタックから構成することが可能である。代替として、第2導電性層は、上記層のサブスタック上に設けてもよく、また、サブスタックおよび第2導電性層を含む基板に熱処理を施してもよい。
・基板を準備するステップと、
・前記基板上に第1導電性層、好ましくは金属層、または前記金属の酸化物に覆われた第1金属層を設けるステップと、
・原子層堆積法によって、前記第1導電性層上にTiO2から成る中間層を堆積するステップと、
・原子層堆積法によって、前記TiO2層上に誘電体材料層を堆積し、TiO2層および第2誘電体層のサブスタックを得るステップであって、前記誘電体材料は、前記TiO2層および前記第2誘電体層で形成されたスタックの結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有するステップと、
・サブスタックを含む基板に熱処理を施して結晶化した誘電体層を得るステップと、
・前記結晶化した誘電体層上に第2導電性層を設けるステップとを含む。
第1の実験において、MIMキャパシタを300mmラインで製造した。フローシーケンスおよびMIMcapスタック断面の概略図を図1に示している。
Claims (11)
- 半導体基板上に層のスタックを製造するための方法であって、
基板を準備するステップと、
前記基板上に第1導電性層を設けるステップと、
原子層堆積法によって、前記導電性層上に層のサブスタックを設けるステップであって、前記サブスタックの少なくとも1層はTiO2層であり、サブスタックの残りの層は、前記層のサブスタックの結晶化の際に、立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層であるステップとを含み、さらに、
前記層のサブスタック上に第2導電性層を設けるステップ、および、前記層のサブスタックと前記第2導電性層とを含む基板に熱処理を施し、前記第1導電性層上で、結晶化した誘電体層を得るステップと、を含む方法。 - 原子層堆積法によって、前記第1導電性層上にTiO2から成る中間層を堆積するステップと、
原子層堆積法によって、前記TiO2の中間層上に、結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層を堆積するステップとによって、前記層のサブスタックを設けるようにした請求項1記載の方法。 - 原子層堆積法によって、前記第1導電性層上に、結晶化の際に立方晶ペロブスカイト相を形成するのに好適な組成を有する誘電体材料層を堆積するステップと、
原子層堆積法によって、前記誘電体材料層上に前記TiO2から成る層を堆積するステップとによって、前記層のサブスタックを設けるようにした請求項1記載の方法。 - 交互に重なるTiO2層と誘電体材料層を、原子層堆積法によって前記第1導電性層上に堆積する請求項1〜3のいずれかに記載の方法。
- 前記誘電体材料は、準安定相のSTOであり、前記準安定STO層の組成において、結晶化した誘電体層が、50%より大きく、65%より小さいSr/(Sr+Ti)比率を有する請求項1〜4のいずれかに記載の方法。
- 前記準安定STO層のSr/(Sr+Ti)比率は、51%〜65%である請求項5記載の方法。
- 前記サブスタックは、ストロンチウム酸化物から成る少なくとも一層を備える請求項5または6記載の方法。
- 前記熱処理は、不活性雰囲気における600℃以下の温度での熱アニールである請求項1〜7のいずれかに記載の方法。
- 前記第1導電性層は、少なくとも上面に、過剰酸素を蓄積する材料を含み、酸素の貯留層を作製して、前記熱処理中に、第1導電性層から誘電体に向けて酸素を放出する請求項1〜8のいずれかに記載の方法。
- 前記第2導電性層は、少なくとも下面に、過剰酸素を蓄積する材料を含み、酸素の貯留層を作製して、続いての熱処理中に、第2導電性層から誘電体に向けて酸素を放出する請求項1〜9のいずれかに記載の方法。
- 前記過剰酸素を蓄積する材料は、ルテニウム酸化物である請求項9または10記載の方法。
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US8835273B2 (en) * | 2012-09-19 | 2014-09-16 | Intermolecular, Inc. | High temperature ALD process of metal oxide for DRAM applications |
US9231046B2 (en) | 2013-03-15 | 2016-01-05 | Globalfoundries Inc. | Capacitor using barrier layer metallurgy |
US9647094B2 (en) | 2013-08-02 | 2017-05-09 | University Of Kentucky Research Foundation | Method of manufacturing a semiconductor heteroepitaxy structure |
JP6583014B2 (ja) | 2016-01-22 | 2019-10-02 | 株式会社デンソー | 半導体装置の製造方法 |
EP3660933A1 (en) * | 2018-11-30 | 2020-06-03 | IMEC vzw | Structure for use in a metal-insulator-metal capacitor |
CN110415974B (zh) * | 2019-07-17 | 2021-04-02 | 南京大学 | 一种基于纳米叠层结构金属氧化物柔性电容器及其制备方法 |
US11038013B2 (en) * | 2019-07-24 | 2021-06-15 | International Business Machines Corporation | Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor |
EP3840073B1 (en) * | 2019-12-18 | 2024-09-25 | Imec VZW | A method for manufacturing a magnetic structure for a magnetic device showing a giant vcma effect |
KR20230007773A (ko) | 2021-07-06 | 2023-01-13 | 삼성전자주식회사 | 커패시터 구조체, 그를 포함하는 반도체 메모리 장치, 그의 제조 방법 및 그를 포함하는 반도체 장치의 제조 방법 |
US20230008075A1 (en) * | 2021-07-08 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Capacitor structure and manufacturing method and operating method thereof |
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US6475854B2 (en) * | 1999-12-30 | 2002-11-05 | Applied Materials, Inc. | Method of forming metal electrodes |
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US20060151822A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | DRAM with high K dielectric storage capacitor and method of making the same |
US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
US8945675B2 (en) | 2008-05-29 | 2015-02-03 | Asm International N.V. | Methods for forming conductive titanium oxide thin films |
JP2010056392A (ja) * | 2008-08-29 | 2010-03-11 | Elpida Memory Inc | キャパシタ用絶縁膜、キャパシタ素子、キャパシタ用絶縁膜の製造方法及び半導体装置 |
EP2166562B1 (en) * | 2008-09-22 | 2019-03-20 | IMEC vzw | Method for forming a capacitor having a strontium titanium oxide dielectric layer by means of ALD |
US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
US8202808B2 (en) | 2009-06-03 | 2012-06-19 | Intermolecular, Inc. | Methods of forming strontium titanate films |
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