JP5677921B2 - 光電変換素子の製造方法 - Google Patents

光電変換素子の製造方法 Download PDF

Info

Publication number
JP5677921B2
JP5677921B2 JP2011209209A JP2011209209A JP5677921B2 JP 5677921 B2 JP5677921 B2 JP 5677921B2 JP 2011209209 A JP2011209209 A JP 2011209209A JP 2011209209 A JP2011209209 A JP 2011209209A JP 5677921 B2 JP5677921 B2 JP 5677921B2
Authority
JP
Japan
Prior art keywords
electrode
group
photoelectric conversion
receiving layer
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011209209A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013051383A5 (enExample
JP2013051383A (ja
Inventor
三ツ井　哲朗
哲朗 三ツ井
有紀 ▲蔵▼本
有紀 ▲蔵▼本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to EP11182753.1A priority Critical patent/EP2434557B1/en
Priority to US13/245,603 priority patent/US8994132B2/en
Priority to JP2011209209A priority patent/JP5677921B2/ja
Priority to KR1020110097645A priority patent/KR101884021B1/ko
Priority to CN201110289309.3A priority patent/CN102420236B/zh
Publication of JP2013051383A publication Critical patent/JP2013051383A/ja
Publication of JP2013051383A5 publication Critical patent/JP2013051383A5/ja
Application granted granted Critical
Publication of JP5677921B2 publication Critical patent/JP5677921B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011209209A 2010-09-27 2011-09-26 光電変換素子の製造方法 Active JP5677921B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP11182753.1A EP2434557B1 (en) 2010-09-27 2011-09-26 Photoelectric conversion element, solid-state imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
US13/245,603 US8994132B2 (en) 2010-09-27 2011-09-26 Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
JP2011209209A JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法
KR1020110097645A KR101884021B1 (ko) 2010-09-27 2011-09-27 광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법
CN201110289309.3A CN102420236B (zh) 2010-09-27 2011-09-27 光电转换元件，固态成像元件，成像设备和用于制造光电转换元件的方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010216102 2010-09-27
JP2010216102 2010-09-27
JP2011169650 2011-08-02
JP2011169650 2011-08-02
JP2011209209A JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法

Publications (3)

Publication Number Publication Date
JP2013051383A JP2013051383A (ja) 2013-03-14
JP2013051383A5 JP2013051383A5 (enExample) 2014-02-20
JP5677921B2 true JP5677921B2 (ja) 2015-02-25

Family

ID=44719488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011209209A Active JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法

Country Status (5)

Country Link
US (1) US8994132B2 (enExample)
EP (1) EP2434557B1 (enExample)
JP (1) JP5677921B2 (enExample)
KR (1) KR101884021B1 (enExample)
CN (1) CN102420236B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102491494B1 (ko) 2015-09-25 2023-01-20 삼성전자주식회사 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서
KR102529631B1 (ko) 2015-11-30 2023-05-04 삼성전자주식회사 유기 광전 소자 및 이미지 센서
JP2017168806A (ja) * 2015-12-21 2017-09-21 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
JP6576235B2 (ja) * 2015-12-21 2019-09-18 東京エレクトロン株式会社 Ｄｒａｍキャパシタの下部電極およびその製造方法
KR102557864B1 (ko) 2016-04-06 2023-07-19 삼성전자주식회사 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치
US10236461B2 (en) 2016-05-20 2019-03-19 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
KR102605375B1 (ko) 2016-06-29 2023-11-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
US10522467B2 (en) * 2016-07-06 2019-12-31 Tokyo Electron Limited Ruthenium wiring and manufacturing method thereof
JP6785130B2 (ja) * 2016-07-06 2020-11-18 東京エレクトロン株式会社 ルテニウム配線およびその製造方法
KR102589215B1 (ko) 2016-08-29 2023-10-12 삼성전자주식회사 유기 광전 소자, 이미지 센서 및 전자 장치
KR102764011B1 (ko) * 2016-12-23 2025-02-05 삼성전자주식회사 전자 소자 및 그 제조 방법
US11145822B2 (en) 2017-10-20 2021-10-12 Samsung Electronics Co., Ltd. Compound and photoelectric device, image sensor, and electronic device including the same
JP7312115B2 (ja) 2017-12-28 2023-07-20 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
WO2019176754A1 (ja) * 2018-03-12 2019-09-19 富士フイルム株式会社 光電変換素子、撮像素子、光センサ、化合物

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968886A (en) * 1989-08-30 1990-11-06 Texas Instruments Incorporated Infrared detector and method
JPH04213832A (ja) 1990-12-11 1992-08-04 Oki Electric Ind Co Ltd 半田バンプ電極を有する半導体素子
JPH11326038A (ja) 1998-05-20 1999-11-26 Dainippon Printing Co Ltd 光センサーおよびその製造方法
JP4213832B2 (ja) 1999-02-08 2009-01-21 富士フイルム株式会社 有機発光素子材料、それを使用した有機発光素子およびスチリルアミン化合物
AU4833800A (en) * 1999-05-13 2000-12-05 University Of Southern California Titanium nitride anode for use in organic light emitting devices
JP4126810B2 (ja) 1999-06-25 2008-07-30 富士電機ホールディングス株式会社 薄膜太陽電池の製造装置
JP2005085933A (ja) 2003-09-08 2005-03-31 Matsushita Electric Ind Co Ltd 光センサ及びそれを用いた光論理素子並びに電子デバイス
JP2007273555A (ja) 2006-03-30 2007-10-18 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2008072090A (ja) 2006-08-14 2008-03-27 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2008072589A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd カラーイメージセンサ
JP2008072435A (ja) 2006-09-14 2008-03-27 Matsushita Electric Ind Co Ltd イメージセンサ
EP1970959A3 (en) * 2007-03-12 2013-07-31 FUJIFILM Corporation Photoelectric conversion element and solid-state imaging device
JP4637196B2 (ja) 2007-03-16 2011-02-23 富士フイルム株式会社 固体撮像素子
JP5087304B2 (ja) * 2007-03-30 2012-12-05 富士フイルム株式会社 固体撮像素子の製造方法
EP2667412A1 (en) 2007-04-18 2013-11-27 Invisage Technologies, INC. Materials, systems and methods for optoelectronic devices
JP5171178B2 (ja) * 2007-09-13 2013-03-27 富士フイルム株式会社 イメージセンサ及びその製造方法
JP2009105336A (ja) * 2007-10-25 2009-05-14 Mitsubishi Chemicals Corp 膜の製造方法、有機電子素子の製造方法及びナフタロシアニン膜
JP2009182095A (ja) 2008-01-30 2009-08-13 Fujifilm Corp 光電変換素子及び固体撮像素子
TWI536596B (zh) * 2008-07-21 2016-06-01 量宏科技股份有限公司 用於安定、敏感性光檢測器的材料、製造設備與方法及由其等製成之影像感應器
JP5453758B2 (ja) 2008-10-09 2014-03-26 コニカミノルタ株式会社 有機光電変換素子、太陽電池及び光センサアレイ
KR101064679B1 (ko) * 2009-03-09 2011-09-15 울산대학교 산학협력단 투명전극
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
JP2011071482A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
KR20130101036A (ko) * 2010-09-27 2013-09-12 후지필름 가부시키가이샤 광전 변환 소자의 제조 방법, 고체 촬상 소자, 촬상 장치

Also Published As

Publication number Publication date
CN102420236B (zh) 2015-11-18
KR20120031922A (ko) 2012-04-04
JP2013051383A (ja) 2013-03-14
EP2434557A3 (en) 2018-02-21
CN102420236A (zh) 2012-04-18
US8994132B2 (en) 2015-03-31
US20120074513A1 (en) 2012-03-29
KR101884021B1 (ko) 2018-07-31
EP2434557B1 (en) 2025-07-02
EP2434557A2 (en) 2012-03-28

Similar Documents

Publication Publication Date Title
JP5677921B2 (ja) 光電変換素子の製造方法
JP5323025B2 (ja) 固体撮像素子
JP5270642B2 (ja) 光電変換素子及び撮像素子
JP5114541B2 (ja) 光センサの製造方法
JP5288640B2 (ja) 撮像素子及びその製造方法
JP6059697B2 (ja) 光電変換素子および撮像素子
JP5572611B2 (ja) 光電変換素子の製造方法、固体撮像素子、撮像装置
JP2011228623A (ja) 光電変換素子及び撮像素子
JP6047108B2 (ja) 光電変換素子、撮像素子、光センサ
KR20160043016A (ko) 광전 변환 소자 및 촬상 소자
JP5824436B2 (ja) 光電変換素子及びそれを用いた撮像素子
JP6231435B2 (ja) 固体撮像素子
JP5520647B2 (ja) 有機光電変換素子の製造方法
JP5651507B2 (ja) 有機光電変換素子の製造方法、有機光電変換素子、撮像素子、撮像装置
KR101846975B1 (ko) 유기 광전 변환 소자의 제조 방법, 유기 광전 변환 소자, 촬상 소자, 및 촬상 장치
JP2013055248A (ja) 光電変換素子の製造方法
WO2014050764A1 (ja) 光電変換素子、撮像素子、光センサ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140624

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140728

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141119

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150105

R150 Certificate of patent or registration of utility model

Ref document number: 5677921

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250