JP5677921B2 - 光電変換素子の製造方法 - Google Patents

光電変換素子の製造方法 Download PDF

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JP5677921B2
JP5677921B2 JP2011209209A JP2011209209A JP5677921B2 JP 5677921 B2 JP5677921 B2 JP 5677921B2 JP 2011209209 A JP2011209209 A JP 2011209209A JP 2011209209 A JP2011209209 A JP 2011209209A JP 5677921 B2 JP5677921 B2 JP 5677921B2
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electrode
group
photoelectric conversion
receiving layer
ring
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JP2013051383A (ja
JP2013051383A5 (enExample
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三ツ井　哲朗
哲朗 三ツ井
有紀 ▲蔵▼本
有紀 ▲蔵▼本
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Fujifilm Corp
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Priority to EP11182753.1A priority Critical patent/EP2434557B1/en
Priority to US13/245,603 priority patent/US8994132B2/en
Priority to JP2011209209A priority patent/JP5677921B2/ja
Priority to CN201110289309.3A priority patent/CN102420236B/zh
Priority to KR1020110097645A priority patent/KR101884021B1/ko
Publication of JP2013051383A publication Critical patent/JP2013051383A/ja
Publication of JP2013051383A5 publication Critical patent/JP2013051383A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011209209A 2010-09-27 2011-09-26 光電変換素子の製造方法 Active JP5677921B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP11182753.1A EP2434557B1 (en) 2010-09-27 2011-09-26 Photoelectric conversion element, solid-state imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
US13/245,603 US8994132B2 (en) 2010-09-27 2011-09-26 Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
JP2011209209A JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法
CN201110289309.3A CN102420236B (zh) 2010-09-27 2011-09-27 光电转换元件，固态成像元件，成像设备和用于制造光电转换元件的方法
KR1020110097645A KR101884021B1 (ko) 2010-09-27 2011-09-27 광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010216102 2010-09-27
JP2010216102 2010-09-27
JP2011169650 2011-08-02
JP2011169650 2011-08-02
JP2011209209A JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法

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JP2013051383A JP2013051383A (ja) 2013-03-14
JP2013051383A5 JP2013051383A5 (enExample) 2014-02-20
JP5677921B2 true JP5677921B2 (ja) 2015-02-25

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US (1) US8994132B2 (enExample)
EP (1) EP2434557B1 (enExample)
JP (1) JP5677921B2 (enExample)
KR (1) KR101884021B1 (enExample)
CN (1) CN102420236B (enExample)

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KR102491494B1 (ko) 2015-09-25 2023-01-20 삼성전자주식회사 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서
KR102529631B1 (ko) 2015-11-30 2023-05-04 삼성전자주식회사 유기 광전 소자 및 이미지 센서
JP2017168806A (ja) * 2015-12-21 2017-09-21 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
JP6576235B2 (ja) * 2015-12-21 2019-09-18 東京エレクトロン株式会社 Ｄｒａｍキャパシタの下部電極およびその製造方法
KR102557864B1 (ko) 2016-04-06 2023-07-19 삼성전자주식회사 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치
US10236461B2 (en) 2016-05-20 2019-03-19 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
KR102605375B1 (ko) 2016-06-29 2023-11-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
JP6785130B2 (ja) * 2016-07-06 2020-11-18 東京エレクトロン株式会社 ルテニウム配線およびその製造方法
US10522467B2 (en) * 2016-07-06 2019-12-31 Tokyo Electron Limited Ruthenium wiring and manufacturing method thereof
KR102589215B1 (ko) 2016-08-29 2023-10-12 삼성전자주식회사 유기 광전 소자, 이미지 센서 및 전자 장치
KR102764011B1 (ko) * 2016-12-23 2025-02-05 삼성전자주식회사 전자 소자 및 그 제조 방법
US11145822B2 (en) 2017-10-20 2021-10-12 Samsung Electronics Co., Ltd. Compound and photoelectric device, image sensor, and electronic device including the same
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JP6970808B2 (ja) * 2018-03-12 2021-11-24 富士フイルム株式会社 光電変換素子、撮像素子、光センサ、化合物

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Also Published As

Publication number Publication date
EP2434557A3 (en) 2018-02-21
CN102420236B (zh) 2015-11-18
EP2434557B1 (en) 2025-07-02
JP2013051383A (ja) 2013-03-14
CN102420236A (zh) 2012-04-18
US20120074513A1 (en) 2012-03-29
EP2434557A2 (en) 2012-03-28
KR101884021B1 (ko) 2018-07-31
US8994132B2 (en) 2015-03-31
KR20120031922A (ko) 2012-04-04

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