JP2013034033A - 光起電性構成部材とその製造方法 - Google Patents
光起電性構成部材とその製造方法 Download PDFInfo
- Publication number
- JP2013034033A JP2013034033A JP2012256169A JP2012256169A JP2013034033A JP 2013034033 A JP2013034033 A JP 2013034033A JP 2012256169 A JP2012256169 A JP 2012256169A JP 2012256169 A JP2012256169 A JP 2012256169A JP 2013034033 A JP2013034033 A JP 2013034033A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- top electrode
- electrode
- photovoltaic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000011368 organic material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 7
- 238000013086 organic photovoltaic Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 17
- 239000002346 layers by function Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 4
- 229920000547 conjugated polymer Polymers 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- -1 poly (p-phenylene) Polymers 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 229920002994 synthetic fiber Polymers 0.000 description 3
- DWJXWSIJKSXJJA-UHFFFAOYSA-N 4-n-[4-(4-aminoanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1NC(C=C1)=CC=C1NC1=CC=C(N)C=C1 DWJXWSIJKSXJJA-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 229920000763 leucoemeraldine polymer Polymers 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】本発明は改良された頂部電極を含む有機構成部材と、その製造方法に関する。前記頂部電極は有機材料よりなり、印刷技術によって付設される。
【選択図】図1
Description
基板の上に正電極(典型的にはITO、即ち酸化インジウム錫)を設ける。その上に必要により中間層として、例えば、陰イオンとしてPSS含有のPEDOTからなるホール導電層が設けられる。その隣接層は吸収剤、即ち光起電性活性材料であり、通常は有機半導体(例えば、共役ポリマーとフラーレンとの混合物)である。これに陰極、即ちカソード(例えば、Ca/AgまたはLiF/Al)が続く。従来カソード材料として用いられてきたのは、非貴金属であって、例えばカルシウム、バリウム、フッ化リチウム、もしくは類似の材料であり、それらの材料は仕事関数が低かった。これらの電極は蒸着もしくはスパッタリングにより調製される。しかし、これらのカソード材料の感受性から、最良の結果を得るには、これらから成る層は、真空中にて調製されねばならない。
ソード電極を有機導電性材料(本ケースにおいては、半透明ではなく不透明)に置き換えることにより、電流方向を反転させる。従ってここでは、ITO(酸化インジウムスズ)層が底部電極および/または基板である場合には、頂部電極は正極であって、負極は基板上にある。
ITOからなる基板に設けられるのは半導体層であって、例えば、P3HT:PCBM(ポリ(3−ヘキシルチオフェン):〔6,6〕−フェニルC61 ブチル酸メチルエステル)(poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester )混合物(低バンドギャップ)である。該半導体層は光起電性活性機能層を形成する。この層に続いて、例えばPEDOTからなる有機導電性機能層が置かれる。
先ず、例えばITO基板などの半透明基板に、半導体有機材料を塗布する。前記塗布は、印刷、スピン塗布などの大量生産に適する技術によって行うことが好ましい。好ましくは導電性有機材料よりなる頂部電極層もまた、半導体機能層に印刷技術を用いて設けることが好ましい。
例えば薄い箔もしくは薄い(極めて薄い)ガラスからなる基板1に対して、ITOからなる半透明な、もしくはアルミニウム、クロム、モリブデン、銅および/または亜鉛などの金属からなる不透明な底部電極2を設ける。この底部電極2に対して、光起電力活性であり、有機あるいは金属、もしくはハイブリッド材料であって、好ましくは溶媒での処理
性が良好な半導体層3を設ける。この層の次には、半透明もしくは完全吸収性になされている頂部導電性機能層もしくは頂部電極4が設けられている。
共役ポリマーや共役ポリマーを含有する混合物の薄膜は、スピン塗布によって製造できるし、他にもスクリーン印刷、インクジェット印刷、フレキソ印刷、グラビア印刷、凸版印刷もしくは平版印刷(もしくは他の/同等の溶剤付設工程)などの一般的な印刷方法によっても製造できる。ポリマーが用いられる場合には、これらの層は可撓性の基板上に付設することも可能である。
Claims (1)
- 基板と、
底部電極と、
有機材料よりなる光起電性活性層と、
主に有機材料からなる頂部電極とを備え、
前記底部電極は前記基板と前記光起電性活性層との間にあって第1の仕事関数を有し、
前記光起電性活性層は前記底部電極と前記頂部電極との間にあり、
前記頂部電極は第1の仕事関数より高い第2の仕事関数を有することにより、前記底部電極はカソードとして作用し、前記頂部電極はアノードとして作用する、光起電性構成部材。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10255964A DE10255964A1 (de) | 2002-11-29 | 2002-11-29 | Photovoltaisches Bauelement und Herstellungsverfahren dazu |
DE10255964.3 | 2002-11-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004556164A Division JP5265076B2 (ja) | 2002-11-29 | 2003-11-21 | 光起電性構成部材とその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013034033A true JP2013034033A (ja) | 2013-02-14 |
Family
ID=32403675
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004556164A Expired - Lifetime JP5265076B2 (ja) | 2002-11-29 | 2003-11-21 | 光起電性構成部材とその製造方法 |
JP2012256169A Pending JP2013034033A (ja) | 2002-11-29 | 2012-11-22 | 光起電性構成部材とその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004556164A Expired - Lifetime JP5265076B2 (ja) | 2002-11-29 | 2003-11-21 | 光起電性構成部材とその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7612367B2 (ja) |
EP (1) | EP1565947B1 (ja) |
JP (2) | JP5265076B2 (ja) |
KR (1) | KR100973018B1 (ja) |
CN (2) | CN1729580A (ja) |
AU (1) | AU2003292075A1 (ja) |
DE (1) | DE10255964A1 (ja) |
WO (1) | WO2004051756A2 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1447860A1 (en) * | 2003-02-17 | 2004-08-18 | Rijksuniversiteit Groningen | Organic material photodiode |
EP1672653B1 (en) * | 2004-12-20 | 2019-07-17 | Merck Patent GmbH | Patterned photovoltaic cell |
US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
DE102006012388A1 (de) | 2005-10-20 | 2007-04-26 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
DE102006009452B4 (de) | 2005-10-20 | 2010-07-01 | Carl Zeiss Surgical Gmbh | Stereomikroskop |
JP2009522818A (ja) * | 2006-01-04 | 2009-06-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 光電池用不動態化層 |
DE102006010767B4 (de) * | 2006-03-08 | 2008-04-17 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US7847364B2 (en) * | 2007-07-02 | 2010-12-07 | Alcatel-Lucent Usa Inc. | Flexible photo-detectors |
JP5462998B2 (ja) * | 2007-08-10 | 2014-04-02 | 住友化学株式会社 | 組成物及び有機光電変換素子 |
US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
EP2172986B1 (en) * | 2008-08-27 | 2013-08-21 | Honeywell International Inc. | Solar cell having hybrid hetero junction structure |
US8367798B2 (en) | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
EP2172987A1 (en) * | 2008-10-02 | 2010-04-07 | Honeywell International Inc. | Solar cell having tandem organic and inorganic structures and related system and method |
DE102008051656A1 (de) | 2008-10-08 | 2010-04-15 | Technische Universität Ilmenau | Verfahren zum Aufbringen einer metallischen Elektrode auf eine Polymerschicht |
US20100101636A1 (en) * | 2008-10-23 | 2010-04-29 | Honeywell International Inc. | Solar cell having supplementary light-absorbing material and related system and method |
US20100224252A1 (en) * | 2009-03-05 | 2010-09-09 | Konarka Technologies, Inc. | Photovoltaic Cell Having Multiple Electron Donors |
US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
US8372945B2 (en) * | 2009-07-24 | 2013-02-12 | Solarmer Energy, Inc. | Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials |
KR20110015999A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
US8399889B2 (en) | 2009-11-09 | 2013-03-19 | Solarmer Energy, Inc. | Organic light emitting diode and organic solar cell stack |
US20110232717A1 (en) * | 2010-02-18 | 2011-09-29 | OneSun, LLC | Semiconductors compositions for dye-sensitized solar cells |
US20120285521A1 (en) * | 2011-05-09 | 2012-11-15 | The Trustees Of Princeton University | Silicon/organic heterojunction (soh) solar cell and roll-to-roll fabrication process for making same |
US9073937B2 (en) | 2011-06-16 | 2015-07-07 | Board Of Trustees Of The University Of Alabama | Organic photovoltaic-battery hybrid device |
WO2013151141A1 (ja) | 2012-04-04 | 2013-10-10 | コニカミノルタ株式会社 | 有機光電変換素子およびこれを用いた太陽電池 |
JP6925800B2 (ja) * | 2016-12-26 | 2021-08-25 | 株式会社東京精密 | 無線測定システム及び工作機械の測定装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001049806A1 (en) * | 1999-12-31 | 2001-07-12 | Lg Chemical Co., Ltd | Electronic device comprising organic compound having p-type semiconducting characteristics |
JP2002222970A (ja) * | 2001-01-25 | 2002-08-09 | Fuji Xerox Co Ltd | 光電変換素子及びその製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4520086A (en) | 1980-11-18 | 1985-05-28 | The United States Of America As Represented By The United States Department Of Energy | Rechargeable solid polymer electrolyte battery cell |
DE3049551A1 (de) * | 1980-12-31 | 1982-07-29 | Basf Ag, 6700 Ludwigshafen | Elektrisch leitfaehige poly(pyrrol)-derivate |
JPS5821876A (ja) | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | 塗布型の太陽電池の製造方法 |
DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
JPS63289874A (ja) * | 1987-05-21 | 1988-11-28 | Ricoh Co Ltd | 光電変換素子 |
JPH01154571A (ja) * | 1987-12-11 | 1989-06-16 | Ricoh Co Ltd | 光電変換素子 |
US5196144A (en) | 1988-10-31 | 1993-03-23 | The Regents Of The University Of California | Electrically conductive polyaniline |
JPH03181181A (ja) * | 1989-12-11 | 1991-08-07 | Canon Inc | 光起電力素子 |
US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JP2613719B2 (ja) * | 1992-09-01 | 1997-05-28 | キヤノン株式会社 | 太陽電池モジュールの製造方法 |
DE19507413A1 (de) | 1994-05-06 | 1995-11-09 | Bayer Ag | Leitfähige Beschichtungen |
JPH07307483A (ja) * | 1994-05-11 | 1995-11-21 | Fuji Xerox Co Ltd | 有機太陽電池 |
JP2992464B2 (ja) | 1994-11-04 | 1999-12-20 | キヤノン株式会社 | 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法 |
JPH10112549A (ja) * | 1996-10-08 | 1998-04-28 | Canon Inc | 太陽電池モジュール |
DE69738307T2 (de) | 1996-12-27 | 2008-10-02 | Canon K.K. | Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle |
FR2759495B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
WO1999009603A1 (en) | 1997-08-15 | 1999-02-25 | Uniax Corporation | Organic diodes with switchable photosensitivity |
GB9803763D0 (en) * | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
US6483099B1 (en) * | 1998-08-14 | 2002-11-19 | Dupont Displays, Inc. | Organic diodes with switchable photosensitivity |
US6451415B1 (en) | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
JP4440359B2 (ja) * | 1998-09-17 | 2010-03-24 | 大日本印刷株式会社 | 有機太陽電池の製造方法 |
AU777360B2 (en) * | 1999-10-27 | 2004-10-14 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
DE10024933A1 (de) | 2000-05-19 | 2001-11-22 | Bayer Ag | Polymerblends enthaltend Polyamid und über Masse-Polymerisationsverfahren hergestellte kautschukmodifizierte Polymerisate |
DE10024993A1 (de) * | 2000-05-22 | 2001-11-29 | Univ Bremen | Elektrisches Bauelement und Verfahren zu seiner Herstellung |
DE60216257T2 (de) * | 2001-04-17 | 2007-06-14 | Matsushita Electric Industrial Co., Ltd., Kadoma | Leitfähiger organischer Dünnfilm, Verfahren zu dessen Herstellung, sowie Elektrde und elektrisches Kabel, die davon Gebrauch machen |
US6746751B2 (en) * | 2001-06-22 | 2004-06-08 | Agfa-Gevaert | Material having a conductive pattern and a material and method for making a conductive pattern |
-
2002
- 2002-11-29 DE DE10255964A patent/DE10255964A1/de not_active Ceased
-
2003
- 2003-11-21 KR KR1020057009671A patent/KR100973018B1/ko active IP Right Grant
- 2003-11-21 WO PCT/EP2003/013095 patent/WO2004051756A2/de active Application Filing
- 2003-11-21 CN CNA2003801072543A patent/CN1729580A/zh active Pending
- 2003-11-21 AU AU2003292075A patent/AU2003292075A1/en not_active Abandoned
- 2003-11-21 EP EP03767605.3A patent/EP1565947B1/de not_active Expired - Lifetime
- 2003-11-21 CN CN2012100431766A patent/CN102738397A/zh active Pending
- 2003-11-21 JP JP2004556164A patent/JP5265076B2/ja not_active Expired - Lifetime
- 2003-11-21 US US10/536,568 patent/US7612367B2/en not_active Expired - Lifetime
-
2012
- 2012-11-22 JP JP2012256169A patent/JP2013034033A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001049806A1 (en) * | 1999-12-31 | 2001-07-12 | Lg Chemical Co., Ltd | Electronic device comprising organic compound having p-type semiconducting characteristics |
JP2002222970A (ja) * | 2001-01-25 | 2002-08-09 | Fuji Xerox Co Ltd | 光電変換素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1729580A (zh) | 2006-02-01 |
JP5265076B2 (ja) | 2013-08-14 |
US7612367B2 (en) | 2009-11-03 |
JP2006508538A (ja) | 2006-03-09 |
AU2003292075A1 (en) | 2004-06-23 |
EP1565947A2 (de) | 2005-08-24 |
CN102738397A (zh) | 2012-10-17 |
EP1565947B1 (de) | 2019-03-20 |
US20060141662A1 (en) | 2006-06-29 |
KR100973018B1 (ko) | 2010-07-30 |
DE10255964A1 (de) | 2004-07-01 |
KR20050088090A (ko) | 2005-09-01 |
WO2004051756A3 (de) | 2005-06-23 |
WO2004051756A2 (de) | 2004-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5265076B2 (ja) | 光起電性構成部材とその製造方法 | |
WO2013180361A1 (ko) | 아민기를 갖는 비공액 고분자를 포함하는 유기전자소자용 기능층 및 이를 포함하는 유기전자소자 | |
US20110203654A1 (en) | Organic thin-film solar cell and method for manufacture thereof | |
KR100986159B1 (ko) | 에너지 전환 효율이 향상된 유기 태양전지 및 이의 제조방법 | |
US20120204931A1 (en) | Method for manufacturing organic thin film solar cell module | |
US20120298174A1 (en) | Organic thin film solar cell | |
US10468546B2 (en) | Solar cell module and method for manufacturing the same | |
KR100971113B1 (ko) | 소자 면적분할을 통해 광전변환효율이 향상된 유기광전변환소자를 제조하는 방법 및 이 방법에 의해 제조된유기 광전변환소자 | |
JP5789971B2 (ja) | 有機薄膜太陽電池の製造方法 | |
JP5593900B2 (ja) | 有機光電変換素子 | |
Wang et al. | Solution-processed electron-transport layer-free organic photovoltaics with liquid metal cathodes | |
Singh et al. | Influence of molar mass ratio, annealing temperature and cathode buffer layer on power conversion efficiency of P3HT: PC71BM based organic bulk heterojunction solar cell | |
JP2012023407A (ja) | 有機薄膜太陽電池 | |
JP5298961B2 (ja) | 有機光電変換素子の製造方法 | |
KR101364461B1 (ko) | 유기태양전지 모듈 및 이의 제조방법 | |
JP2010278377A (ja) | 有機光電変換素子 | |
EP1746671B1 (en) | Surface-selective deposition of organic thin films | |
JP5932928B2 (ja) | 光電変換装置 | |
US20110100465A1 (en) | Organic Solar Cell with Oriented Distribution of Carriers and Manufacturing Method of the Same | |
JP6034429B2 (ja) | 光電変換装置および光電変換装置の製造方法 | |
Graddage | Components and devices | |
Dang et al. | Solution processing of polymer photovoltaic solar cells in air or under inert atmosphere | |
JP2016100357A (ja) | 光電変換装置 | |
Ge et al. | Research Progress and Manufacturing Techniques for Large-Area Polymer Solar Cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121221 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130827 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140304 |