CN102738397A - 光生伏打部件及其制造方法 - Google Patents
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Abstract
本发明涉及光生伏打部件及其制造方法。该光生伏打部件可包括:底部电极;光生伏打活性层,包括共轭聚合物和富勒烯;顶部电极,主要包括有机材料;以及漏泄连接件,设置在所述顶部电极上,其中,所述光生伏打部件构造为光生伏打电池,所述光生伏打活性层在所述底部电极与所述顶部电极之间,所述顶部电极是正极,且所述顶部电极是非透明的。
Description
本申请是2003年11月21日提交的题为“光生伏打部件及其制造方法”的发明专利申请200380107254.3的分案申请。
技术领域
本发明涉及一种包含有经改进的顶部电极的有机部件及其制造方法。
背景技术
例如,从2002P14485DE中可以得知通常具有如下电池结构的光生伏打元件。
正极(通常是ITO,氧化铟锡)淀积在基板上。在其上淀积中间层,其中适当地为例如由具有PSS作为阴离子的PEDOT制成的空穴导通层。邻接的层是吸附层,即,光生伏打活性层,这通常是有机半导体(例如,具有富勒烯的共轭聚合物的混合物)。之后接着是负极,阴极(例如,Ca/Ag或LiF/Al)。迄今为止,用作阴极材料的是非贵金属,比如钙、钡、氟化锂、或类似的具有低逸出功的材料。这些电极是通过气相沉积或溅射产生的。但是,这些阴极材料的感光度要求由它们制备的层必须是在真空中产生以得到最好的结果。
由于几个原因,使用真空施加的顶部电极作为阴极通常不是令人满意的,其一是因为在真空中进行气相沉积工艺步骤成本高昂,另外就是因为从制造工程的观点来看,其较慢且维护程度高。
发明内容
因此,本发明的目的是提供一种有机光生伏打部件,该有机光生伏打部件至少包括具有底部电极、功能层和顶部电极的基板,并且无需真空制造步骤即可生产。
本发明涉及包括主要由有机材料制成的顶部电极的光生伏打部件。本发明还涉及制造光生伏打部件的方法,其中,在基板上施加底部导电功能层(电极),其上是半导体性的光生伏打活性功能层,最后,将顶部有机导电功能层施加到该半导体性的光生伏打活性功能层上。
具体实施方式
术语“光生伏打部件”指代任何这样的部件,其包含半导体性的光敏功能层和由有机或无机材料制备的底部电极;半导体性的光生伏打活性功能层;以及由主要的有机材料制成的上导电功能层(电极)。
在一个实施例中,顶部电极是由半透明的材料形成,因为光子通过半透明的顶部电极撞击该半导体性的光生伏打活性功能层,所以基板不再需要具有任何透明性。迄今为止,ITO由于其导电性和透明性而主要被用作基板和/或底部电极,但在该情形中,这种昂贵的ITO材料可以被替换为更便宜的材料,比如Al、Ti、Cu或其他金属板或箔。
在一个实施例中,产生了反转的结构,即,将公知的由非贵金属制成的上阴极性电极由有机导电材料(其在该情形中不是半透明的而是非透明的)替换,这倒转了电流的方向,使得在ITO(氧化铟锡)作为底部电极和/或基板的情形中,顶部电极是正极,而负极在基板一侧。
在一个实施例中,有机光生伏打元件是由如下有机材料构建的。
施加到由ITO制成的基板的是半导体层,例如,P3HT:PCBM(聚3-己基噻吩:[6,6]-苯基C61丁酸甲脂)混合物(低带隙),其形成了光生伏打活性功能层。之后接着的是例如PEDOT的有机导电功能层。
本文中,术语“有机材料”和/或“功能聚合物”涵盖了所有类型的有机、金属有机和/或无机合成材料,它们在英语中例如表述为术语“塑料”。这包括除用于常规二极管(镓、硅)的半导体以及典型的金属性导体以外的所有类型的材料。因此,本文并非意于将有机材料教条地限定为含碳的材料,而相反,例如广泛使用的硅酮也可以在考虑之中。而且,该术语也并不打算对分子量暗示任何限制,尤其是高聚物的和/或低聚物的材料,而相反,也以任何可能的方式使用“小分子”。
在本方法的一个实施例中,有机电子光生伏打活性元件可以通过如下的工艺步骤生产:
首先,对半透明的基板,例如ITO基板涂覆半导体性的有机材料。该涂层优选地通过适合于大规模生产的技术完成,比如印刷、旋涂等。顶部电极层优选地由导电有机材料制成,并优选地通过印刷技术施加到半导体性功能层。
在一个实施方案中,在制造顶部电极层之后,印上例如银导电浆的漏泄连接件以减少欧姆损耗。或者,例如可以使用碳丝网印刷浆料,但是也可以想到通过低成本的金属化,比如溅射或气相沉积来产生导电路径。
在本文中,术语“有机电子光生伏打活性元件”例如指代太阳能电池、光电检测器或任何其他类型的具有光生伏打活性功能层作为它的基本元件的电子模块。
下面参考示范性的附图对本发明进行更加详细地说明,附图示意性地呈现了有机光生伏打活性元件。
向基板1施加底部电极2,其中,基板1例如可以由薄箔或薄(超薄)的玻璃制成,底部电极2例如可以由ITO制备为半透明的,或由比如铝、铬、钼、铜和/或锌的金属制备为非透明的。向底部电极2施加半导体层3,该半导体层3是光生伏打活性的,可以由有机物或金属或混合材料形成,并优选地具有溶剂处理性。在该层之后是上导电功能层或顶部电极4,这可以实施为半透明的或完全吸收性的。
尤其由美国专利第5,454,880号和第5,333,183号已知了适合的光敏层,其可以包括一种或多种半导体性的合成材料,这可以是以单分子、低聚物和/或高聚物形式出现,其也可以包括无机颗粒和/或非颗粒。可以存在具有相似或不同电子亲和性和/或不同带隙的两种或更多的共轭有机合成材料、无机颗粒和/或非颗粒的混合物。
例如,可以通过热气相沉积或化学/物理气相沉积(CVD)来制造有机分子、低聚物和分子混合物的薄层。
共轭聚合物和含有共轭聚合物的混合物的薄层可以通过旋涂制造,但是也可以通过其他通常的方法制造,例如丝网印刷、喷墨印刷、柔版印刷、凹版印刷、凸版印刷或平版印刷(或其它/类似溶剂沉积工艺)。如果使用聚合物,这些层可以被淀积在挠性基板上。
典型的半导体共轭聚合物的示例包括聚乙炔(PA)及其衍生物,聚异硫茚(PITN)及其衍生物,聚噻吩(PT)及其衍生物,聚吡咯(PPr)及其衍生物,聚2,5-噻吩乙烯(PTV)及其衍生物,聚芴(PF)及其衍生物,聚p-亚苯(PPP)及其衍生物,聚亚苯乙烯(PPV)及其衍生物,以及聚喹啉及其衍生物,聚咔唑及其衍生物,和半导体性聚苯胺(leucomeraldine和/或leuceemeraldine基)。
在施主/受主聚合物混合物中受主的示例包括,但不限于聚苯腈乙烯、比如C60的富勒烯及其功能性衍生物(比如PCBM,PCBR)以及有机分子、有机金属分子或无机纳米颗粒(比如,CdTe、CdSe、CdS、CIS)。
此外,任何所使用的太阳能电池还可以被构建为两个分开的层,其中,施主与受主在空间上分开(例如,PT/C60或PPV/C60)。
本发明涉及包含有经改进的顶部电极的有机部件及其制造方法。顶部电极是由有机材料制成的,该有机材料优选地,但并不一定是通过印刷方法施加的。该有机材料使得可以将靠上的电极制备为半透明的,从而可以使用便宜的非透明电极来替代ITO作为底部电极;在另外的情形中,其中,顶部电极是非透明的,而底部电极是半透明且由ITO制成,以产生了具有反转结构和相反电流的光生伏打部件,因为此时顶部电极成为了正极。
Claims (8)
1.一种光生伏打部件,包括:
底部电极;
光生伏打活性层,包括共轭聚合物和富勒烯;
顶部电极,主要包括有机材料;以及
漏泄连接件,设置在所述顶部电极上,
其中,所述光生伏打部件构造为光生伏打电池,所述光生伏打活性层在所述底部电极与所述顶部电极之间,所述顶部电极是正极,且所述顶部电极是非透明的。
2.根据权利要求1所述的光生伏打部件,其中,所述漏泄连接件由银导电浆制成。
3.根据权利要求1所述的光生伏打部件,其中,所述顶部电极包括PEDOT。
4.一种制造光生伏打部件的方法,其中,向基板应用底部电极,在其上是半导体性的光生伏打活性功能层,该半导体性的光生伏打活性功能层包括共轭聚合物和富勒烯,将有机顶部电极施加到所述半导体性的光生伏打活性功能层,并且将漏泄连接件施加到所述有机顶部电极上,其中,所述光生伏打部件构造为光生伏打电池,所述有机顶部电极是正极,且所述有机顶部电极是非透明的。
5.根据权利要求4所述的方法,其中,所述有机顶部电极通过印刷技术施加。
6.一种光生伏打部件,包括:
基板;
第一电极;
第二电极,包括主要为有机的材料,所述第二电极是正极;
光生伏打活性层,包括共轭聚合物和富勒烯;以及
漏泄连接件,
其中,所述第一电极在所述基板和所述光生伏打活性层之间,
所述光生伏打活性层在所述第一电极和所述第二电极之间,
所述第二电极在所述漏泄连接件与所述光生伏打活性层之间,
所述第二电极是非透明的,且
所述光生伏打部件构造为光生伏打电池。
7.根据权利要求6所述的光生伏打部件,其中,所述泄漏连接件包括银导电浆。
8.根据权利要求6所述的光生伏打部件,其中,所述第二电极包括PEDOT。
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1447860A1 (en) * | 2003-02-17 | 2004-08-18 | Rijksuniversiteit Groningen | Organic material photodiode |
EP1672653B1 (en) * | 2004-12-20 | 2019-07-17 | Merck Patent GmbH | Patterned photovoltaic cell |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
DE102006012388A1 (de) | 2005-10-20 | 2007-04-26 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
DE102006009452B4 (de) | 2005-10-20 | 2010-07-01 | Carl Zeiss Surgical Gmbh | Stereomikroskop |
JP2009536445A (ja) * | 2006-01-04 | 2009-10-08 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 可撓性電子装置用不動態化層 |
DE102006010767B4 (de) * | 2006-03-08 | 2008-04-17 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US7847364B2 (en) * | 2007-07-02 | 2010-12-07 | Alcatel-Lucent Usa Inc. | Flexible photo-detectors |
JP5462998B2 (ja) * | 2007-08-10 | 2014-04-02 | 住友化学株式会社 | 組成物及び有機光電変換素子 |
US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
EP2172986B1 (en) * | 2008-08-27 | 2013-08-21 | Honeywell International Inc. | Solar cell having hybrid hetero junction structure |
US8367798B2 (en) | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
EP2172987A1 (en) * | 2008-10-02 | 2010-04-07 | Honeywell International Inc. | Solar cell having tandem organic and inorganic structures and related system and method |
DE102008051656A1 (de) | 2008-10-08 | 2010-04-15 | Technische Universität Ilmenau | Verfahren zum Aufbringen einer metallischen Elektrode auf eine Polymerschicht |
US20100101636A1 (en) * | 2008-10-23 | 2010-04-29 | Honeywell International Inc. | Solar cell having supplementary light-absorbing material and related system and method |
EP2404333A2 (en) * | 2009-03-05 | 2012-01-11 | Konarka Technologies, Inc. | Photovoltaic cell having multiple electron donors |
US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
US8372945B2 (en) | 2009-07-24 | 2013-02-12 | Solarmer Energy, Inc. | Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials |
KR20110015999A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
US8399889B2 (en) | 2009-11-09 | 2013-03-19 | Solarmer Energy, Inc. | Organic light emitting diode and organic solar cell stack |
US20110232717A1 (en) * | 2010-02-18 | 2011-09-29 | OneSun, LLC | Semiconductors compositions for dye-sensitized solar cells |
US20120285521A1 (en) * | 2011-05-09 | 2012-11-15 | The Trustees Of Princeton University | Silicon/organic heterojunction (soh) solar cell and roll-to-roll fabrication process for making same |
US9073937B2 (en) | 2011-06-16 | 2015-07-07 | Board Of Trustees Of The University Of Alabama | Organic photovoltaic-battery hybrid device |
WO2013151141A1 (ja) | 2012-04-04 | 2013-10-10 | コニカミノルタ株式会社 | 有機光電変換素子およびこれを用いた太陽電池 |
JP6925800B2 (ja) * | 2016-12-26 | 2021-08-25 | 株式会社東京精密 | 無線測定システム及び工作機械の測定装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1131824A (zh) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | 光电元件及其制造方法 |
US6083635A (en) * | 1994-05-06 | 2000-07-04 | Bayer Ag | Conductive coatings |
EP1096577A2 (en) * | 1999-10-27 | 2001-05-02 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4520086A (en) * | 1980-11-18 | 1985-05-28 | The United States Of America As Represented By The United States Department Of Energy | Rechargeable solid polymer electrolyte battery cell |
DE3049551A1 (de) * | 1980-12-31 | 1982-07-29 | Basf Ag, 6700 Ludwigshafen | Elektrisch leitfaehige poly(pyrrol)-derivate |
JPS5821876A (ja) | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | 塗布型の太陽電池の製造方法 |
DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
JPS63289874A (ja) * | 1987-05-21 | 1988-11-28 | Ricoh Co Ltd | 光電変換素子 |
JPH01154571A (ja) * | 1987-12-11 | 1989-06-16 | Ricoh Co Ltd | 光電変換素子 |
US5196144A (en) * | 1988-10-31 | 1993-03-23 | The Regents Of The University Of California | Electrically conductive polyaniline |
JPH03181181A (ja) * | 1989-12-11 | 1991-08-07 | Canon Inc | 光起電力素子 |
US5331183A (en) | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JP2613719B2 (ja) * | 1992-09-01 | 1997-05-28 | キヤノン株式会社 | 太陽電池モジュールの製造方法 |
JPH07307483A (ja) * | 1994-05-11 | 1995-11-21 | Fuji Xerox Co Ltd | 有機太陽電池 |
JPH10112549A (ja) * | 1996-10-08 | 1998-04-28 | Canon Inc | 太陽電池モジュール |
EP0851513B1 (en) | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
FR2759495B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
CN1143400C (zh) | 1997-08-15 | 2004-03-24 | 杜邦显示器公司 | 可切换的有机光电二极管检测器及其应用 |
GB9803763D0 (en) * | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
US6483099B1 (en) * | 1998-08-14 | 2002-11-19 | Dupont Displays, Inc. | Organic diodes with switchable photosensitivity |
US6451415B1 (en) | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
JP4440359B2 (ja) * | 1998-09-17 | 2010-03-24 | 大日本印刷株式会社 | 有機太陽電池の製造方法 |
KR100377321B1 (ko) * | 1999-12-31 | 2003-03-26 | 주식회사 엘지화학 | 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자 |
DE10024933A1 (de) | 2000-05-19 | 2001-11-22 | Bayer Ag | Polymerblends enthaltend Polyamid und über Masse-Polymerisationsverfahren hergestellte kautschukmodifizierte Polymerisate |
DE10024993A1 (de) * | 2000-05-22 | 2001-11-29 | Univ Bremen | Elektrisches Bauelement und Verfahren zu seiner Herstellung |
JP2002222970A (ja) * | 2001-01-25 | 2002-08-09 | Fuji Xerox Co Ltd | 光電変換素子及びその製造方法 |
DE60216257T2 (de) * | 2001-04-17 | 2007-06-14 | Matsushita Electric Industrial Co., Ltd., Kadoma | Leitfähiger organischer Dünnfilm, Verfahren zu dessen Herstellung, sowie Elektrde und elektrisches Kabel, die davon Gebrauch machen |
US6746751B2 (en) * | 2001-06-22 | 2004-06-08 | Agfa-Gevaert | Material having a conductive pattern and a material and method for making a conductive pattern |
-
2002
- 2002-11-29 DE DE10255964A patent/DE10255964A1/de not_active Ceased
-
2003
- 2003-11-21 EP EP03767605.3A patent/EP1565947B1/de not_active Expired - Lifetime
- 2003-11-21 WO PCT/EP2003/013095 patent/WO2004051756A2/de active Application Filing
- 2003-11-21 AU AU2003292075A patent/AU2003292075A1/en not_active Abandoned
- 2003-11-21 CN CN2012100431766A patent/CN102738397A/zh active Pending
- 2003-11-21 US US10/536,568 patent/US7612367B2/en not_active Expired - Lifetime
- 2003-11-21 CN CNA2003801072543A patent/CN1729580A/zh active Pending
- 2003-11-21 JP JP2004556164A patent/JP5265076B2/ja not_active Expired - Lifetime
- 2003-11-21 KR KR1020057009671A patent/KR100973018B1/ko active IP Right Grant
-
2012
- 2012-11-22 JP JP2012256169A patent/JP2013034033A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6083635A (en) * | 1994-05-06 | 2000-07-04 | Bayer Ag | Conductive coatings |
CN1131824A (zh) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | 光电元件及其制造方法 |
EP1096577A2 (en) * | 1999-10-27 | 2001-05-02 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
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