WO2013151141A1 - 有機光電変換素子およびこれを用いた太陽電池 - Google Patents
有機光電変換素子およびこれを用いた太陽電池 Download PDFInfo
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- WO2013151141A1 WO2013151141A1 PCT/JP2013/060369 JP2013060369W WO2013151141A1 WO 2013151141 A1 WO2013151141 A1 WO 2013151141A1 JP 2013060369 W JP2013060369 W JP 2013060369W WO 2013151141 A1 WO2013151141 A1 WO 2013151141A1
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- photoelectric conversion
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- nitrogen
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- 239000002109 single walled nanotube Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- XHFLOLLMZOTPSM-UHFFFAOYSA-M sodium;hydrogen carbonate;hydrate Chemical compound [OH-].[Na+].OC(O)=O XHFLOLLMZOTPSM-UHFFFAOYSA-M 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- 125000001935 tetracenyl group Chemical group C1(=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C12)* 0.000 description 1
- VELSFHQDWXAPNK-UHFFFAOYSA-N tetracontacyclo[25.6.5.516,28.44,32.35,11.321,34.28,10.212,15.222,35.229,31.113,20.124,38.02,6.014,19.017,25.018,23.030,37.033,36.547,54.446,53.448,58.126,51.150,52.03,45.07,42.09,61.039,40.041,43.044,63.049,76.055,78.056,62.057,68.059,64.060,67.065,69.066,71.070,73.072,75.074,77]octaheptaconta-1,3(45),4(48),5(61),6,8,10,12,14,16,18,20,22,24(39),25,27(38),28,30,32,34(42),35(40),36,41(43),44(63),46,49(76),50(77),51,53,55(78),56(62),57,59,64,66,68,70(73),71,74-nonatriacontaene Chemical compound c12c3c4c5c6c1c1c7c8c2c2c3c3c9c4c4c5c5c%10c%11c%12c%13c%14c%15c%12c%12c%16c%17c%18c%19c%20c%21c%17c%17c%22c%21c%21c%23c%20c%20c%19c%19c%24c%18c%16c%15c%15c%24c%16c(c7c%15c%14c1c6c5%13)c8c1c2c2c3c3c(c%21c5c%22c(c%11c%12%17)c%10c4c5c93)c%23c2c%20c1c%19%16 VELSFHQDWXAPNK-UHFFFAOYSA-N 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- GNXPUXGOQIHJLJ-UHFFFAOYSA-N thiadiazolo[4,5-b]pyridine Chemical group C1=CN=C2N=NSC2=C1 GNXPUXGOQIHJLJ-UHFFFAOYSA-N 0.000 description 1
- YJSKZIATOGOJEB-UHFFFAOYSA-N thieno[2,3-b]pyrazine Chemical group C1=CN=C2SC=CC2=N1 YJSKZIATOGOJEB-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical group S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000005259 triarylamine group Chemical class 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Images
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- H01L31/02—Details
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- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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Definitions
- the present invention relates to an organic photoelectric conversion element and a solar cell using the same. More specifically, the present invention relates to a technique for improving the transparency, photoelectric conversion efficiency, and the like of an organic photoelectric conversion element.
- a photoelectric conversion element In solar power generation, light energy is directly converted into electric power using a photoelectric conversion element utilizing the photovoltaic effect.
- a photoelectric conversion element has a structure in which a photoelectric conversion layer (light absorption layer) is sandwiched between a pair of electrodes, and light energy is converted into electric energy in the photoelectric conversion layer.
- the photoelectric conversion element is a silicon-based photoelectric conversion element using single-crystal / polycrystalline / amorphous Si, GaAs, CIGS (copper (Cu), indium (In), depending on the material used for the photoelectric conversion layer and the form of the element.
- Compound-based photoelectric conversion elements using a compound semiconductor such as gallium (Ga) and selenium (Se)), dye-sensitized photoelectric conversion elements (Gretzel cells), and the like have been proposed and put to practical use.
- a solar cell that can be installed in such a window and that can be installed simply by sticking to an existing building is a building-integrated photovoltaics (BIPV) system. This is expected to be a new and growing field.
- BIPV building-integrated photovoltaics
- Patent Documents 1 to 3 and Non-Patent Document 1 it is difficult to easily obtain a photoelectric conversion element having excellent transparency, photoelectric conversion efficiency, and durability.
- Non-Patent Document 1 The method using a conductive polymer described in Non-Patent Document 1 is still insufficient in conductivity. According to this document, the fill factor (FF) is 47% and the photoelectric conversion efficiency (PCE) is only 1.9%, and it is difficult to obtain a battery with a high fill factor and short circuit current (Jsc).
- FF fill factor
- PCE photoelectric conversion efficiency
- the present invention provides a transparent electrode (transparent conductive film) having a simple manufacturing process, high transparency, high photoelectric conversion efficiency, and excellent durability, and an organic photoelectric conversion element (particularly, a transflective type (see-through type)).
- an organic photoelectric conversion element particularly, a transflective type (see-through type)).
- Type organic photoelectric conversion element
- the present inventors have conducted intensive research to solve the above problems. And it discovered that the transparent conductive film which can make high electroconductivity and high transparency compatible was easily obtained by forming a metal thin film layer on the base layer containing a nitrogen-containing organic compound. That is, by using an organic thin film of a nitrogen-containing organic compound having a high coordinating power with respect to a metal as a base layer, a continuous film is formed even when the thickness of the metal thin film layer is very thin. It has been found that both high conductivity and high transparency can be achieved. And it discovered that the organic photoelectric conversion element (especially transflective (see-through type) organic photoelectric conversion element) which has favorable photoelectric conversion efficiency and durability can be provided by using this transparent conductive film as an electrode.
- the organic photoelectric conversion element especially transflective (see-through type) organic photoelectric conversion element
- a transparent conductive film having a metal thin film layer is provided.
- the first electrode, the second electrode, and the photoelectric conversion layer existing between the first electrode and the second electrode At least one of the first electrode and the second electrode includes a base layer containing a nitrogen-containing organic compound, and a metal thin film layer containing a metal element of Group 11 of the periodic table and having a thickness of 2 to 10 nm.
- An organic photoelectric conversion element which is a laminated transparent conductive film, is provided.
- the present invention it is possible to provide a transparent conductive film as a transparent electrode with improved conductivity while ensuring high transparency as a thin film by a simple method.
- an organic photoelectric conversion element is configured using the transparent conductive film, it is possible to provide a transflective (see-through type) organic photoelectric conversion element that can exhibit sufficient photoelectric conversion efficiency and durability. it can.
- One embodiment of the present invention is an underlayer containing a nitrogen-containing organic compound, a metal thin film layer formed on the underlayer, containing a transition metal element belonging to Group 11 of the periodic table and having a thickness of 2 to 10 nm.
- a transparent conductive film In another embodiment of the present invention, a metal layer comprising a nitrogen-containing organic compound, a metal layer formed on the glass layer, containing a transition metal element belonging to Group 11 of the periodic table and having a thickness of 10 to 30 nm.
- the transparent conductive film of the present invention is characterized in that a metal thin film layer is formed on a base layer containing a nitrogen-containing organic compound.
- a metal thin film layer is formed on a base layer containing a nitrogen-containing organic compound.
- a metal thin film tends to be isolated in an island shape by film growth of a nuclear growth type (Volume-Weber: VW type).
- a commonly used film-forming substrate has a weak coordination power to metal, and minute metal particles flying from the evaporation source can move (diffusion) for a while after adhering to the substrate. Fine particles collide and fuse with each other, so that isolated metal islands are arranged, that is, agglomerated metal particles are present in a patchy state.
- Such an island-shaped metal film cannot be used as an electrode material because of its low transmittance and high sheet resistance.
- the film thickness is increased, the sheet resistance can be reduced, but since the transparency is lowered, a transparent electrode cannot be obtained.
- metal atoms constituting the metal thin film layer interact with a nitrogen-containing compound constituting the underlayer, so that the metal thin film is a single layer growth type (Frank-van der Merwe: FW type). It is formed by the film growth, and becomes a uniform metal layer with a very thin film thickness.
- the strong coordination force of the underlayer to the metal reduces the kinetic energy of the metal particles adhering to the underlayer, reduces the diffusion distance of metal atoms on the underlayer surface, and agglomerates the metal. It can be suppressed. As a result, a continuous metal film without island-like isolation can be formed even in the case of a thin film.
- the favorable transparent conductive film which improved electroconductivity, maintaining the transparency (visible light transmittance) by setting it as a thin film is obtained.
- a transflective (see-through type) organic photoelectric conversion element organic thin-film solar cell
- the organic photoelectric conversion element since the metal thin film layer (electrode layer) is formed through the base layer containing the nitrogen-containing compound, damage to the photoelectric conversion layer due to the electrode material film formation can be prevented. Further, the organic photoelectric conversion element can achieve high power generation efficiency and durability even when the base layer containing the nitrogen-containing organic compound is configured to exist between the metal thin film layer and the photoelectric conversion layer. .
- conductivity means that the surface resistivity (sheet resistance) is 100 ⁇ / square or less, preferably 50 ⁇ / square or less, more preferably 30 ⁇ / square or less. More preferably, it is 20 ⁇ / square or less, and particularly preferably 10 ⁇ / square or less.
- the surface resistivity can be measured by, for example, Mitsubishi Chemical, Loresta GP, MCP-T610 using a four-terminal four-probe method according to JIS-K7194: 1994.
- transmission visible light transmission
- the transmittance of light having a wavelength of 550 nm is 60% or more, preferably 70% or more, more preferably 80%. Or more, more preferably 85% or more, and particularly preferably 90% or more.
- the transmittance of light having a wavelength of 550 nm can be measured using a spectrophotometer (for example, U-4000 type manufactured by Hitachi, Ltd.).
- One embodiment of the present invention is an organic photoelectric conversion element having a first electrode, a second electrode, and a photoelectric conversion layer existing between the first electrode and the second electrode.
- At least one of the first electrode and the second electrode includes a base layer containing a nitrogen-containing organic compound and a metal element belonging to Group 11 of the periodic table and has a thickness of 2 to 10 nm, It is characterized in that it is a transparent conductive film in which a metal thin film layer having a thickness of 10 to 30 nm is laminated.
- FIG. 1 is a schematic cross-sectional view schematically showing a normal layer type organic photoelectric conversion element according to an embodiment of the present invention.
- the organic photoelectric conversion element 10 of FIG. 1 includes an anode (first electrode) 11, a hole transport layer 26, a photoelectric conversion layer 14, an electron transport layer 27, and a cathode (second electrode) 12 on a substrate 25. It has the structure laminated
- the photoelectric conversion layer 14 includes a p-type organic semiconductor material and an n-type organic semiconductor material.
- the substrate 25 is a member that is arbitrarily provided mainly for facilitating formation of the anode (first electrode) 11 thereon by a coating method.
- holes are generated at the HOMO level of the p-type organic semiconductor and electrons are generated at the LUMO level of the n-type organic semiconductor.
- the electrons then move to the conduction band of the n-type organic semiconductor material.
- the electrons move through the electron transport layer 27 and the cathode 12, and then move to the valence band of the p-type organic semiconductor material via the external circuit. That is, holes generated at the HOMO level of the p-type organic semiconductor material move to the conduction band of the n-type organic semiconductor material via the external circuit after passing through the hole transport layer 26 and the anode 11.
- a photocurrent flows between the anode 11 and the cathode 12 to generate power.
- the p-type organic semiconductor material and the n-type organic semiconductor material are used. It is particularly preferable to use a bulk heterojunction photoelectric conversion layer 14 (not shown) in which are uniformly mixed. However, it is not limited only to such a form.
- the organic photoelectric conversion element 10 of the embodiment shown in FIG. 1 at least one of the first electrode and the second electrode is a transparent conductive film in which a base layer containing a nitrogen-containing organic compound and a metal thin film layer are laminated.
- Composed. 2 and 3 show a basic configuration of a transparent conductive film as a transparent electrode according to an embodiment of the present invention.
- the first electrode 11 as the anode is the transparent conductive film 1A having the form shown in FIG. 2
- the second electrode 12 as the cathode is the transparent conductive film 1B having the form shown in FIG. is there.
- the transparent electrode 1 ⁇ / b> A is formed by laminating a metal thin film layer 3 on an underlayer 2.
- the organic photoelectric conversion element 10 shown in FIG. 1 has an anode (first electrode) 11, a hole transport layer 26, a photoelectric conversion layer 14, an electron transport layer 27, and a cathode (second electrode) on a substrate 25. Therefore, the transparent conductive film 1A as the anode (first electrode) 11 is formed by sequentially laminating the base layer 2 and the metal thin film layer 3 on the substrate 25. . Therefore, in the transparent conductive film 1A, the base layer 2 is located on the substrate 25 side and the metal thin film layer 3 is located on the hole transport layer 26 side between the substrate 25 and the hole transport layer 26 in FIG. To be formed.
- the transparent conductive film 1 ⁇ / b> B has a configuration in which a metal thin film layer 3 is laminated on the base layer 2, and a protective layer 4 is further provided on the metal thin film layer 3.
- the protective layer 4 is an optional layer provided as necessary, and as the second electrode 12 as a cathode, a transparent conductive film 1A having no protective layer 4 as shown in FIG. 2 may be used. Is possible.
- the organic photoelectric conversion element 10 shown in FIG. 1 has an anode (first electrode) 11, a hole transport layer 26, a photoelectric conversion layer 14, an electron transport layer 27, and a cathode (second electrode) on a substrate 25.
- the transparent conductive film 1B as the cathode (second electrode) 12 has a protective layer 4 on the outermost layer side of the organic photoelectric conversion element 10 and a lower side on the electron transport layer 27 side. It is formed so that the formation 2 is located.
- the underlayer according to the present invention is excellent in electron transport properties and can function as an electron transport layer. Accordingly, when the transparent conductive film shown in FIG.
- the cathode (second electrode) 12 of the normal layer type organic photoelectric conversion element 10 is used as the cathode (second electrode) 12 of the normal layer type organic photoelectric conversion element 10 as shown in FIG. Since the function as a layer can be exhibited, the electron transport layer 27 can be omitted, and the base layer can be formed directly on the photoelectric conversion layer 14.
- the transparent conductive film 1B shown in FIG. 3 can also be used as the first electrode 11 as the anode.
- the transparent conductive film 1A is used as the first electrode 11. It is preferable to do.
- both the first electrode and the second electrode are constituted by the transparent conductive film (1A, 1B) having a laminated structure of the base layer 2 and the metal thin film layer 3, but the present invention is applied.
- the form is not limited, and at least one of the first electrode and the second electrode may be a transparent conductive film.
- the second electrode is at least the transparent conductive film according to the present invention. Since the underlayer containing the nitrogen-containing organic compound has the characteristics of an electron transport layer, when the transparent conductive film of the present invention is used as the second electrode 12, the underlayer can also serve as the electron transport layer 27. It is.
- the other electrode that is not the transparent conductive film does not necessarily need to be transparent, and may be composed of an electrode material that is not transparent. It may be made of a transparent electrode material.
- the anode 11 is made of a transparent electrode material (so that the irradiated light can efficiently reach the photoelectric conversion layer 14.
- the transparent conductive film and other electrode materials are preferably used.
- the substrate 25 is not necessarily transparent, and may be an opaque metal foil or the like.
- the organic photoelectric conversion element 10 is a transflective (see-through) organic thin film solar cell. .
- FIG. 4 is a schematic cross-sectional view schematically showing a reverse layer type organic photoelectric conversion element according to another embodiment of the present invention.
- the anode 11 and the cathode 12 are disposed at opposite positions as compared with the organic photoelectric conversion element 10 of FIG. 1, and the hole transport layer 26, the electron transport layer 27, Are different in that they are arranged at the opposite positions. That is, in the reverse layer type organic photoelectric conversion element, the first electrode is the cathode 12, the second electrode is the anode (counter electrode) 11, and a hole is formed between the second electrode and the photoelectric conversion layer 14. It is characterized in that the transport layer 26 is included.
- the first electrode (cathode) 12 and the second electrode (anode) 11 is the transparent conductive film 1A or 1B.
- the first electrode (cathode) 12 is a transparent conductive film 1A not provided with a protective layer.
- the second electrode (anode) 11 is It is preferable to use the transparent conductive film 1B provided with the protective layer 4.
- both the first electrode (cathode) 12 and the second electrode (anode) 11 may be the transparent conductive film 1A or 1B, or only one may be the transparent conductive film 1A or 1B.
- the first electrode is the transparent conductive film according to the present invention. Since the underlayer containing the nitrogen-containing organic compound has the characteristics of an electron transport layer, when the transparent conductive film of the present invention is used as the first electrode 12, the underlayer can also serve as the electron transport layer 27. It is.
- the second electrode may be a transparent conductive film according to the present invention. When only one of the first electrode and the second electrode is the transparent conductive film, the other electrode that is not the transparent conductive film is not necessarily transparent.
- the first electrode (cathode) 12 is used so that the irradiated light can efficiently reach the photoelectric conversion layer 14. Is preferably made of a transparent electrode material.
- the substrate 25 is not necessarily transparent, and may be an opaque metal foil or the like.
- the organic photoelectric conversion element 20 is a semi-transmissive (see-through) organic thin-film solar cell. .
- FIG. 5 is a schematic cross-sectional view schematically showing an organic photoelectric conversion element including a normal layer tandem type (multi-junction type) photoelectric conversion layer according to another embodiment of the present invention.
- the organic photoelectric conversion element 30 in FIG. 5 replaces the photoelectric conversion layer 14 with a first photoelectric conversion layer 14a, a second photoelectric conversion layer 14b, and these. The difference is that a laminate of the charge recombination layer 38 interposed between the two photoelectric conversion layers is disposed.
- photoelectric conversion materials p-type organic semiconductor and n-type organic semiconductor having different absorption wavelengths are used for the first photoelectric conversion layer 14a and the second photoelectric conversion layer 14b, respectively. By using this, light in a wider wavelength range can be efficiently converted into electricity.
- the anode 11 and the cathode 12 are disposed at opposite positions, and the hole transport layer 26 and the electron transport layer 27 are disposed at opposite positions. If the electron transport layer 38a and the second hole transport layer 38b are disposed at opposite positions, a reverse layer tandem type (multi-junction type) photoelectric conversion element is obtained.
- the transparent conductive film of this embodiment is used for both the first electrode (anode) 11, the second electrode (cathode) 12, and the charge recombination layer 38. be able to. That is, at least one of these is the transparent conductive film 1A or 1B.
- the substrate 25 is not necessarily transparent and may be an opaque metal foil or the like.
- the tandem organic photoelectric conversion element 30 is a transflective (see-through) organic thin film solar cell.
- the organic photoelectric conversion element of the present invention is preferably a normal layer type organic photoelectric conversion element shown in FIG. 1 or a normal layer type tandem organic photoelectric conversion element shown in FIG. More preferable.
- the transparent conductive film of the present invention is used as the second electrode 12 in the normal layer type organic photoelectric conversion element because the underlayer containing the nitrogen-containing organic compound constituting the transparent conductive film has the characteristics of an electron transport layer. This is because the base layer can also serve as the electron transport layer 27.
- the organic photoelectric conversion element of this embodiment essentially includes an anode (cathode) and a cathode (anode).
- the transparent conductive film of the present invention only needs to be used as one of the anode and the cathode, that is, the other electrode may be formed using a conventionally known electrode material.
- At least one of the first electrode and the second electrode is a transparent conductive film in which a base layer and a metal thin film layer are laminated.
- a transparent conductive film 1 is formed on a base layer 2 containing a nitrogen-containing compound and the base layer 2 and contains a transition metal element belonging to Group 11 of the periodic table.
- a metal thin film layer 3 having a thickness of 2 to 10 nm or a thickness of 10 to 30 nm.
- the underlayer 2 includes a nitrogen-containing organic compound.
- the base layer 2 functions as a base when the metal thin film layer 3 is formed, and has an effect of reducing the diffusion distance of metal atoms as an electrode material and suppressing metal aggregation.
- the metal thin film layer 3 can be formed thinly and continuously, and as a result, conductivity is ensured while maintaining light transmittance even with a thin film thickness.
- a transparent conductive film (transparent electrode) is obtained. Furthermore, even if the underlayer 2 configured to contain a nitrogen-containing compound exists between the photoelectric conversion layer 14 and the metal thin film layer 3 that is conductive, high power generation efficiency and durability can be achieved. it can.
- the nitrogen-containing organic compound is not particularly limited as long as it is an organic compound having a nitrogen atom-containing group in the molecule. Since the nitrogen atom-containing group has a strong interaction with the metal atom, the metal atom is constrained when forming the metal thin film layer, and single layer growth type (FW type) film growth is possible.
- such nitrogen-containing organic compounds have excellent electron transport properties. For this reason, when the base layer containing the nitrogen-containing organic compound is located between the cathode and the photoelectric conversion layer, it can function as an electron transport layer, and in such a case, even if the electron transport layer is not provided, it is excellent. Can exhibit high photoelectric conversion efficiency.
- the nitrogen-containing organic compound may be a low-molecular compound or a high-molecular compound, but preferably has a structure that easily interacts with metal atoms when forming a metal thin film layer.
- the nitrogen-containing organic compound is represented by a compound represented by the following general formula (1), a polymer compound having a partial structure represented by the following general formula (2), or the following general formula (3). It is preferable to include a polymer compound having a partial structure.
- a 1 represents a monovalent nitrogen atom-containing group.
- n1 represents an integer of 2 or more, and preferably has sufficient interaction with a Group 11 metal atom (the nitrogen-containing group is not buried in the molecule due to steric hindrance, and can substantially exhibit an effect on the interaction with the metal atom. ) Is an integer of 2 to 4, more preferably 2 or 3 from the viewpoint of ease of synthesis.
- the plurality of A 1 may be the same or different.
- Y 1 represents an n1-valent organic group or a single bond (-). Note that when Y 1 is a single bond (-), n1 is 2, and the compound of the general formula (1) has a structure of A 1 -A 1 .
- the two A 1 may be the same as or different from each other.
- the compound represented by the general formula (1) contains five or more nitrogen atoms, which is effective for the present invention and is excellent in the interaction with the metal thin film. More preferably, it contains 5 to 20, more preferably 5 to 10 nitrogen atoms.
- a 2 represents a divalent nitrogen atom-containing group
- Y 2 represents a divalent organic group or a single bond (-).
- a 4 and A 5 represent a divalent nitrogen atom-containing group.
- a 4 and A 5 may be the same or different.
- n3 and n4 each independently represents an integer of 0 or 1.
- Y 3 represents an (n2 + 2) -valent organic group.
- a preferred form is a compound in which the nitrogen atom-containing group is not the central part but the peripheral part of the nitrogen-containing organic compound, and the compound represented by the general formula (1) or the partial structure represented by the general formula (3) It is a high molecular compound.
- the nitrogen-containing organic compound is a polymer compound, that is, a polymer compound having a partial structure represented by the general formula (2) or the general formula (3).
- the underlayer containing a nitrogen-containing organic compound is usually formed by a coating method, but a polymer compound has higher film quality uniformity, and an organic photoelectric conversion element with excellent photoelectric conversion efficiency and durability can be obtained. is there.
- the polymer compound having a partial structure represented by the general formula (2) or (3) as the nitrogen-containing organic compound is composed of only a single structural unit derived from the general formula (2) or (3).
- the homopolymer may be a homopolymer, or it may be a copolymer (copolymer) composed only of two or more structural units derived from the above general formulas (2) and / or (3). Good.
- a copolymer (copolymer) may be formed.
- the content of other structural units is not particularly limited as long as the effect of the nitrogen-containing organic compound according to the present invention is not impaired, but derived from other structural units
- the content of the monomer is preferably 10 to 75 mol%, more preferably 20 to 50 mol% in the monomer derived from all structural units.
- the terminal of the polymer compound having the partial structure represented by the general formula (2) or (3) as the nitrogen-containing organic compound is not particularly limited, and is appropriately determined depending on the type of the raw material (monomer) used. Usually, it is a hydrogen atom.
- the monovalent nitrogen atom-containing group represented by A 1 or A 3 is not particularly limited as long as it is an organic group containing a nitrogen atom.
- an amino group, a dithiocarbamate group, a thioamide group, a cyano group (—CN), an isonitrile group (—N + ⁇ C ⁇ ), an isocyanate group (—N ⁇ C ⁇ O), a thioisocyanate group (—N ⁇ C S) or a group containing a substituted or unsubstituted nitrogen-containing aromatic ring.
- a group containing a nitrogen-containing aromatic ring may be used in combination of a plurality of these nitrogen-containing aromatic rings.
- the plurality of nitrogen-containing aromatic rings may be directly bonded or may be bonded via a divalent linking group.
- a plurality of nitrogen-containing aromatic rings may be condensed.
- the substituent is not particularly limited when the nitrogen-containing aromatic ring has a substituent.
- an alkyl group for example, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group) Group, pentadecyl group, etc.
- cycloalkyl group eg, cyclopentyl group, cyclohexyl group, etc.
- alkenyl group eg, vinyl group, allyl group, 1-propenyl group, 2-butenyl group, 1,3-butadienyl group, 2 -Pentenyl group, isopropenyl group etc.
- alkynyl group eg ethynyl group, propargyl
- polymerizable groups for example, acryloyl group, methacryloyl group, epoxy group, oxetane group, isocyanate group, alkoxysilane group, etc.
- a substituted alkyl group alkylene group
- the substituent is preferably an alkyl group (for example, a methyl group, an ethyl group, a propyl group, or the like) or an amino group, and more preferably a methyl group, an amino group, or a dimethylamino group.
- substituents may be further substituted with the above substituents.
- a plurality of these substituents may be bonded to each other to form a ring.
- One or more hydrogen atoms in the nitrogen-containing aromatic ring may be substituted with an amino group, dithiocarbamate group, thioamide group, cyano group, isonitrile group, isocyanate group, or thioisocyanate group.
- an amino group, a dithiocarbamate group, a thioamide group, a cyano group, an isonitrile group, an isocyanate group, or a thioisocyanate group and a nitrogen-containing aromatic ring may be bonded via a divalent linking group.
- the divalent linking group is not particularly limited, but is a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon atom.
- Examples thereof include an arylene group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms, a substituted or unsubstituted alkyleneoxy group having 1 to 20 carbon atoms, and an imino group.
- the unsubstituted alkylene group having 1 to 20 carbon atoms is not particularly limited, and is a linear or branched alkylene group having 1 to 20 carbon atoms.
- examples include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a propylene group, an ethylethylene group, a pentamethylene group, a hexamethylene group, a heptamethylene group, and an octamethylene group.
- a linear or branched alkylene group having 1 to 15 carbon atoms is preferable, and a linear or branched alkylene group having 1 to 12 carbon atoms is more preferable.
- the unsubstituted cycloalkylene group having 3 to 20 carbon atoms is not particularly limited, and examples thereof include a cyclopentylene group, a cyclohexylene group, and a cycloheptylene group.
- the arylene group having 6 to 30 carbon atoms is not particularly limited, and examples thereof include o-phenylene group, m-phenylene group, p-phenylene group, fluorenediyl group, naphthalenediyl group, anthracenediyl group, naphthacenediyl group, Pyrenediyl group, naphthylnaphthalenediyl group, biphenyldiyl group (for example, [1,1′-biphenyl] -4,4′-diyl group, 3,3′-biphenyldiyl group, 3,6-biphenyldiyl group, etc.), Examples thereof include a terphenyldiyl group, a quaterphenyldiyl group, a kinkphenyldiyl group, a sexiphenyldiyl group, a septiphenyldiyl group, an octylphen
- the unsubstituted heteroarylene group having 1 to 30 carbon atoms is not particularly limited.
- An unsubstituted alkyleneoxy group having 1 to 20 carbon atoms means “—O-alkylene-” or “-alkylene-O—”, wherein the alkylene group is an alkylene group having 1 to 20 carbon atoms. is there.
- the alkylene group having 1 to 20 carbon atoms is not particularly limited, and examples thereof include the same alkylene groups as described above.
- a linear or branched alkylene group having 1 to 15 carbon atoms is preferable, and a linear or branched alkylene group having 1 to 12 carbon atoms is more preferable.
- the substituent when 20 alkyleneoxy groups have a substituent is the same as the substituent in the nitrogen-containing aromatic ring.
- the substituent and the divalent linking group are not the same.
- an alkylene group is not substituted with an alkyl group.
- the divalent linking group is preferably a substituted or unsubstituted arylene group having 6 to 18 carbon atoms, a heteroarylene group having 6 to 18 carbon atoms, or an imino group, and more preferably a substituted or unsubstituted phenylene group.
- Z represents —CR 1 R 2 —, —NR 3 —, —O—, —S—, or —SiR 4 R 5 —.
- X 1 to X 8 each independently represents —CR 6 ⁇ or —N ⁇ .
- R 1 to R 6 are each independently a single bond (-), a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms. And a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, or a substituted or unsubstituted alkyloxy group having 1 to 20 carbon atoms.
- the unsubstituted alkyl group having 1 to 20 carbon atoms is not particularly limited, and is a linear or branched alkyl group having 1 to 20 carbon atoms.
- the unsubstituted aryl group having 6 to 30 carbon atoms is not particularly limited, and examples thereof include non-condensed hydrocarbon groups such as a phenyl group, a biphenyl group, and a terphenyl group; a pentarenyl group, an indenyl group, a naphthyl group, and an azulenyl group Group, heptaenyl group, biphenylenyl group, fluorenyl group, acenaphthylenyl group, preadenyl group, acenaphthenyl group, phenalenyl group, phenanthryl group, anthryl group, fluoranthenyl group, acephenanthrylenyl group, aceanthrylenyl group, triphenylenyl group, Examples thereof include condensed polycyclic hydrocarbon groups such as a pyrenyl group, a chrycenyl group, and a naph
- the unsubstituted alkyloxy group (alkoxy group) having 1 to 20 carbon atoms is not particularly limited, and examples thereof include a group in which an oxygen atom is bonded to the root of the alkyl group exemplified above. Specifically, methoxy group, ethoxy group, propyloxy group, isopropyloxy group, butoxy group, isobutoxy group, tert-butoxy group, pentyloxy group, hexyloxy group, cyclohexyloxy group, heptyloxy group, octyloxy group, 2-ethylhexyloxy group, nonyloxy group, decyloxy group, 3,7-dimethyloctyloxy group, lauryloxy group, trifluoromethoxy group, pentafluoroethoxy group, perfluorobutoxy group, perfluorohexyl group, perfluorooctyl group, A methoxymethyloxy group, 2-me
- an alkyl group having 1 to 20 carbon atoms a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, a heteroaryl group having 1 to 30 carbon atoms, or 1 to 20 carbon atoms.
- the substituent in the case where the alkyloxy group has a substituent is the same as the substituent in the nitrogen-containing aromatic ring. In the above, the same substituent is not substituted. That is, a substituted alkyl group (alkylene group) is not substituted with an alkyl group.
- the condensed ring structure represented by the general formula (4) has a high carrier transport property, even when the underlayer is in contact with the photoelectric conversion layer or the electron transport layer of the organic photoelectric conversion element, the carrier is sufficiently transported. And a decrease in power generation efficiency can be suppressed.
- Specific examples include groups represented by C-1 to C-8 as described below and groups represented by N-12-N-36 described below.
- R 1 and R 2 and R 4 and R 5 are the same as defined in the general formula (4).
- a fluorene mother nucleus (C-1, C-2), a carbazole mother nucleus (N-12 to N-15) or an azacarbazole mother nucleus (N-16 to N) having a high electron transporting property. -34).
- the monovalent nitrogen atom-containing group represented by A 1 or A 3 preferably includes a basic group having high coordination property to the Group 11 metal element. Specifically, (a) a group containing a pyridine ring or a pyrimidine ring; (b) an amino group; (c) a dithiocarbamate group or a thioamide group.
- a group containing a pyridine ring or a pyrimidine ring is a ⁇ -electron deficient heteroaromatic ring in which unpaired electrons are not incorporated into a ⁇ -conjugated system. High coordination to metal elements. Specifically, it is derived from a pyridine ring, a pyrimidine ring, or a condensed ring containing these.
- a 1 or A 3 may be a monovalent group formed by removing one hydrogen atom from a pyridine ring, a pyrimidine ring, or a condensed ring containing these. Examples thereof include groups represented by the following N-1 to N-11.
- the monovalent pyridine ring-containing group is present at the end of a nitrogen-containing aromatic ring having a condensed ring structure such as a carbazole mother nucleus or an azacarbazole mother nucleus having a high electron transporting property. Since such a condensed ring structure has high carrier transportability, even when the underlayer is in contact with the power generation layer or the electron transport layer of the organic photoelectric conversion element, the carrier can be transported sufficiently. As a result, a decrease in power generation efficiency can be prevented.
- RN is not particularly limited, and examples thereof include a hydrogen atom or a group exemplified as a substituent in a nitrogen-containing aromatic ring.
- a 2-pyridyl group (N-2) at the end of the compound (the end of A 1 or the end of A 3 ).
- N-2 2-pyridyl group
- Particularly preferred is a group having a pyridyl group at the end of a nitrogen-containing aromatic ring having a condensed ring structure such as a carbazole mother nucleus or an azacarbazole mother nucleus having a high electron transporting property.
- a 1 preferably has a structure represented by the following formulas N-39 to N-45.
- (B) Amino group As the amino group, those having no electron-withdrawing group at the adjacent site are preferable. Such amino groups have high coordination properties to Group 11 metal elements.
- the amino group may be any of primary amino group, secondary amino group, tertiary amino group, and quaternary amino group (ammonium group). However, a neutral primary amino group, secondary amino group, and tertiary amino group are preferable because they have better coordination of metal atoms. Furthermore, a tertiary amino group is preferable from the viewpoint of solubility and coatability.
- the amino group being a quaternary amino group means that the amino group is in the form of a salt, as shown in the following compound 50, for example. That is, the nitrogen-containing organic compound according to the present invention includes a case where the amino group as the nitrogen atom-containing group is in the form of a salt.
- examples of the anion that forms a salt with a quaternary amino group are not particularly limited, but include a halogen atom (fluorine atom, chlorine atom, bromine atom), sulfate ion, nitrate ion, tetrafluoroborate ion. And hexafluorophosphoric acid.
- a halogen atom fluorine atom, chlorine atom, bromine atom
- sulfate ion nitrate ion
- tetrafluoroborate ion hexafluorophosphoric acid.
- a halogen atom is preferable, and a bromine atom is particularly preferable.
- R A to R c in the secondary amino group (—NHR A ), tertiary amino group (—NR A R B ), and quaternary amino group (—N + R A R B R c ) are substituted or An unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted carbon It represents a heteroaryl group having 1 to 30 atoms.
- examples of the alkyl group having 1 to 20 carbon atoms, the cycloalkyl group having 3 to 20 carbon atoms, the aryl group having 6 to 30 carbon atoms, and the heteroaryl group having 1 to 30 carbon atoms include the above general formula. This is the same as in (4).
- R A , R B , and R c are preferably as small as possible from the viewpoint of metal atom coordination.
- R A , R B and R c are a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 12 carbon atoms, a substituted or unsubstituted group.
- a group derived from a nitrogen aromatic ring particularly preferred is a pyridyl group).
- R A , R B , and R c is an alkyl group, a cycloalkyl group, an aryl group, or a heteroaryl group substituted with an amino group. This is because when amino groups are present at a high density, coordination interaction with a metal atom can be increased. Furthermore, in such a case, it is preferable also from the point which can improve favorable solubility, applicability
- R A , R B , and R c is preferably a group represented by the following formula.
- the amino group can be present uniformly and at a high density on the surface of the underlayer, and coordination with metal atoms The effect can be further enhanced.
- L 1 represents a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon atom having 6 to 30 carbon atoms.
- a divalent linking group selected from a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms and a substituted or unsubstituted alkyleneoxy group having 1 to 20 carbon atoms.
- the alkylene group, cycloalkylene group, arylene group, heteroarylene group and alkyleneoxy group are the same as defined in the divalent linking group.
- L 1 is preferably a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and more preferably a methylene group, an ethylene group, a trimethylene group, or a tetramethylene group.
- p is 1 or more, the plurality of L 1 may be the same or different.
- R 11 to R 13 are each a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted group.
- R 11 to R 13 may be the same or different.
- the alkyl group, cycloalkyl group, aryl group, and heteroaryl group are the same as defined in the general formula (4), and thus the description thereof is omitted.
- R 11 to R 13 are represented by an alkyl group having 1 to 8 carbon atoms or a formula: — [L 1 —N (R 11 )] p —L 1 —N (R 12 ) (R 13 )
- an alkyl group having 1 to 3 carbon atoms (methyl group, ethyl group, propyl group, isopropyl group) or the formula: — [L 1 —N (R 11 )] p —L 1 —N ( R 12 ) is more preferably a group represented by (R 13 ).
- the terminal R 12 or R 13 is preferably a hydrogen atom or a methyl group.
- p represents the number of repetitions of the formula: —L 1 —N (R 11 ) — and can be appropriately selected depending on the desired number of amino groups.
- p is preferably an integer of 0 to 5, more preferably an integer of 0 to 3, and particularly preferably 0 or 1.
- amino group as A 1 or A 3 preferably has the following structure (including a salt form).
- an alkyl group, cycloalkyl, wherein at least one of the above R A , R B , and R c of the amino group as A 1 or A 3 is substituted with a dithiocarbamate group described later A form which is a group, an aryl group or a heteroaryl group is also preferable. This is because when the amino group and the dithiocarbamate group are present at a high density, the coordination interaction with the metal atom can be increased. More preferably, at least one of the above R A , R B and R c is an alkyl group having 1 to 8 carbon atoms substituted with a dithiocarbamate group described later. (For example, exemplified compound No. 62 described later).
- dithiocarbamate group or thioamide group is a monovalent group derived from dithiocarbamate or thioamide, and has a sulfur atom that is specifically highly coordinated to Group 11 elements of the periodic table. .
- Each dithiocarbamate group or thioamide group has two isomers depending on the substitution position.
- a dithiocarbamate group one is a form in which a nitrogen atom is linked to another group and takes the form —N (R D ) —C ( ⁇ S) —S—R E , and the other is a sulfur atom in the other In the form of linking to a group, it takes the form of —S—C ( ⁇ S) —NR F R G.
- a thioamide group one is a form in which a nitrogen atom is linked to another group, such as —N (R H ) —C ( ⁇ S) —R I , and the other is a carbon atom in another form.
- linking to a group it takes the form of —C ( ⁇ S) —NR J R K.
- either form can be preferably used.
- a dithiocarbamate group having a plurality of sulfur atoms is preferable, and a dithiocarbamate group in which a sulfur atom is linked to other groups is more preferable.
- polar solvents such as moisture are less likely to remain in the film, and the durability tends to be better.
- R D and R F to R K in the dithiocarbamate group or thioamide group are a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cyclohexane having 3 to 20 carbon atoms. It represents an alkyl group, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.
- R E represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon atom having 6 to 30 aryl groups, substituted or unsubstituted heteroaryl groups having 1 to 30 carbon atoms, or alkali metal atoms (Li, Na, K, etc.).
- R D and R E , R F and R G in the dithiocarbamate group, and R H and R I , R J and R K in the thioamide group may be the same or different, respectively. Good.
- R D to R K may be the same or different.
- the alkyl group, cycloalkyl group, aryl group, and heteroaryl group are the same as defined in the general formula (4).
- R D to R K are preferably as small as possible from the viewpoint of the coordination of metal atoms.
- R D and R F to R K are a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 12 carbon atoms, a substituted group Or an unsubstituted aryl group having 6 to 12 carbon atoms and a substituted or unsubstituted heteroaryl group having 4 to 12 carbon atoms, preferably a hydrogen atom, a substituted or unsubstituted carbon atom having 1 to 8 carbon atoms.
- an alkyl group or a substituted or unsubstituted heteroaryl group having 4 to 6 carbon atoms More preferably, it is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms (particularly preferably, a methyl group, an ethyl group, a propyl group or a tert-butyl group) or a substituted or unsubstituted carbon atom having 4 to 4 carbon atoms.
- 6 is a group derived from a nitrogen-containing aromatic ring 6 (particularly preferred is a pyridyl group).
- it contains a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms (particularly preferably, a methyl group, an ethyl group or a tert-butyl group) or a substituted or unsubstituted carbon group having 4 to 6 carbon atoms.
- a group derived from a nitrogen aromatic ring particularly preferably, a pyridyl group) or an alkali metal atom (particularly a sodium atom (Na)); and a dithiocarbamate group (—N (R D ) —C ( ⁇ S) —
- a form that is an aryl group is also preferred.
- R D bonded to a nitrogen atom , R F , R G is an alkyl group, a cycloalkyl group, an aryl group, or a heteroaryl group substituted with a dithiocarbamate group.
- R D , R F and RG is preferably a group represented by the following formula.
- the thiocarbamate group can be present uniformly and at a high density on the surface of the underlayer, and can be distributed to the metal atom. Can further enhance the interaction.
- L 2 represents a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon atom having 6 to 30 carbon atoms.
- a divalent linking group selected from a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms and a substituted or unsubstituted alkyleneoxy group having 1 to 20 carbon atoms.
- the alkylene group, cycloalkylene group, arylene group, heteroarylene group, and alkyleneoxy group are the same as defined in the divalent linking group, and thus the description thereof is omitted.
- L 2 is preferably a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and more preferably a methylene group, an ethylene group, a trimethylene group or a tetramethylene group.
- R 21 and R 23 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms.
- R 26 represents a group represented by R 22 , R 24 to R 26 each independently a hydrogen atom, substituted or unsubstituted Alkyl groups having 1 to 20 carbon atoms, substituted or unsubstituted carbon atoms Number 3 cycloalkyl group to 20, a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group having 1 to
- R 21 to R 26 may be the same or different from each other.
- alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group are the same as defined in formula (4).
- the alkali metal atom is the same as defined in the above R E.
- q represents the number of repetitions of the formula: [L 2 —N (C ( ⁇ S) —S— (R 21 )] or [L 2 —S—C ( ⁇ S) —N (R 24 )],
- q is preferably an integer of 0 to 5, more preferably an integer of 0 to 3, and particularly preferably 0 or 1.
- the dithiocarbamate group as A 1 or A 3 has the following structures S-1 to S-4.
- a polar solvent such as moisture hardly remains in the film and is represented by S-3 or S-4, which is a dithiocarbamate group in which a sulfur atom is linked to another group from the viewpoint of improving durability. Groups are preferred.
- the coordination bond strength tends to be stronger in the lone pair of nitrogen-containing heteroaromatic rings that are not delocalized, but it has a ring structure and accumulates in the molecule at a high density. Has its limits.
- amino groups and dithiocarbamate groups are relatively small substituents, and it is presumed that dendrimer / hyperbranched polymer tends to be able to arrange substituents capable of coordinating to group 11 atoms with high density on the outermost layer of the molecule.
- a single-layer growth type (Frank-van der Merwe: FW type) film growth effect can be exhibited by coordination to a similar group 11 element.
- One or more hydrogen atoms in the nitrogen-containing aromatic ring may be substituted with an amino group, a dithiocarbamate group, a thioamide group, a cyano group, an isonitrile group, an isocyanate group, or a thioisocyanate group, or an amino group ,
- a dithiocarbamate group, a thioamide group, a cyano group, an isonitrile group, an isocyanate group, or a thioisocyanate group and a nitrogen-containing aromatic ring may be bonded via a divalent linking group.
- a group containing a nitrogen-containing aromatic ring may be used in combination of a plurality of these nitrogen-containing aromatic rings. In this case, a plurality of heteroaromatic rings may be directly bonded, or the divalent linking group described above may be used. Or a plurality of nitrogen-containing aromatic rings may be condensed.
- the divalent nitrogen atom-containing group represented by A 2, A 4, or A 5 includes a basic group having a high coordination property to a Group 11 metal element. Specifically, it is preferable to include (a) a group containing a pyridine ring or a pyrimidine ring, (b) an amino group, (c) a dithiocarbamate group or a thioamide group, as in A 1 and A 3 above.
- the specific form of the group containing (a) a pyridine ring or a pyrimidine ring is one hydrogen atom from the group exemplified as the monovalent group containing (a) a pyridine ring or a pyrimidine ring in A 1 or A 3 Since it is common except that it is a divalent group except for, the description is omitted. More preferably, A 2 , A 4 or A 5 includes a group derived from a pyridine ring-containing ring (pyridine ring-containing group), and more preferably includes a group derived from a pyridine ring. Examples of the group derived from the pyridine ring include the following divalent groups (pyridinylene group) derived from the pyridine ring in addition to the divalent groups represented by the above N-16 to N-36.
- the divalent nitrogen atom-containing group represented by A 2 or A 4 or A 5 contains an electron transporting condensed ring structure such as a carbazole mother nucleus or an azacarbazole mother nucleus.
- a divalent group derived from a nitrogen aromatic ring Specifically, it preferably contains a divalent group represented by N-12 to N-36.
- carrier transportability is high, so that even when the underlayer is in contact with the power generation layer or the electron transport layer of the organic photoelectric conversion element, the carrier is sufficiently transported. As a result, a decrease in power generation efficiency can be prevented.
- the divalent group represented by the above N-16 to N-36 having an azacarbazole mother nucleus is included from the viewpoint of improving the coordination property to the Group 11 metal element.
- the main chain structure of A 2, A 4, or A 5 has a nitrogen-containing aromatic ring having a condensed ring structure such as a carbazole mother nucleus or an azacarbazole mother nucleus having a high electron transporting property.
- the side chain portion has a monovalent group derived from a pyridine ring, that is, a pyridyl group (N-1 to N-3).
- the coordination property to the Group 11 metal element and the carrier transport property are improved, and the decrease in power generation efficiency can be prevented.
- it preferably includes a structure represented by the following formulas N-49 to N-56.
- L 3 represents a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon atom having 6 to 30 carbon atoms.
- a divalent linking group selected from a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms and a substituted or unsubstituted alkyleneoxy group having 1 to 20 carbon atoms.
- the alkylene group, cycloalkylene group, arylene group, and alkyleneoxy group are the same as defined in the divalent linking group.
- heteroarylene group in addition to a group derived from a heterocyclic ring not containing a nitrogen atom as a heteroaryl group in the above divalent linking group, pyridine, pyrimidine, pyrazine, triazine, carbazole, carboline, diazacarbazole, pyrrole , Quinoline, isoquinoline, quinolone, isoquinolone, piperidine, coumarin, benzimidazole, benzimidazolone, benzoxazole, benzisoxazole, benzoxazolone, benzothiazole, benzothiazolethione, benzothiazolone, benzoisothiazolone, indole, carbazole, pyrazole, imidazole, Oxazole, isoxazole, thiazole, isothiazole, indazole, pyridazine, cinnoline, quinazoline, quinazolone, quinoxa
- a substituted or unsubstituted arylene group having 6 to 12 carbon atoms and a substituted or unsubstituted heteroarylene group having 1 to 12 carbon atoms are preferable, and a phenylene group and a pyridinylene group are more preferable.
- the form containing (b) amino group, (c) dithiocarbamate group or thioamide group is such that one or more hydrogen atoms of a divalent group derived from a nitrogen-containing aromatic ring are the amino group or dithiocarbamate described above.
- a 2 or A 4 or A 5 has a nitrogen-containing aromatic ring having a condensed ring structure such as a carbazole mother nucleus or an azacarbazole mother nucleus having a high electron transport property in the main chain structure (for example, N-12 to N-35), wherein one or more hydrogen atoms of the nitrogen-containing aromatic ring are substituted with an amino group, a dithiocarbamate group described later, or the amino group or dithiocarbamate group described above.
- a structure which is a group substituted with an alkyl group methyl group, ethyl group, propyl group, n-butyl group, t-butyl group
- the following structures are preferable (for example, Exemplified Compound Nos. 59 and 60 below).
- R m is a trivalent group derived from an alkyl chain having 1 to 12 carbon atoms. Specifically, ethanetriyl group, propanetriyl group, butanetriyl group, pentanetriyl group, hexanetriyl group, heptanetriyl group, octanetriyl group, nonanetriyl group, decantriyl group, undecantriyl group, dodecantriyl group Etc.
- W represents an amino group, a dithiocarbamate group, or an alkyl group having 1 to 4 carbon atoms substituted with an amino group or a dithiocarbamate group (methyl group, ethyl group, propyl group, isopropyl group, n-butyl group) , Sec-butyl group, tert-butyl group).
- a 2 or A 4 or A 5 has a polyalkyleneimine structure .
- polyalkyleneimine means a linear or branched polymer having an aminoalkylene group as a repeating unit.
- oligomers such as dimers and trimers are also included in the polyalkyleneimine.
- a polyethyleneimine structure which is a branched polymer having an aminoethylene group as a repeating unit is shown below.
- the polyethyleneimine shown above has a primary amino group (NH 2 —CH 2 CH 2 —), a secondary amino group (NH— (CH 2 CH 2 —) 2 ), a tertiary amino group (N— ( CH 2 CH 2 —) 3 ).
- the primary amino group constitutes the end of the chain
- the tertiary amino group constitutes the branching point of the chain.
- the polyalkyleneimine of this embodiment is not particularly limited as long as it is a polymer having an aminoalkylene group as a repeating unit as described above.
- alkylene group contained in the aminoalkylene group include a methylene group (—CH 2 —), an ethylene group (—CH 2 CH 2 —), a trimethylene group (—CH 2 CH 2 CH 2 —), a propylene group ( —CH (CH 3 ) CH 2 —), tetramethylene group (—CH 2 CH 2 CH 2 CH 2 —), 1,2-dimethylethylene group (—CH (CH 3 ) CH (CH 3 ) —), etc. Can be mentioned.
- the terminal structure is not particularly limited, but is usually a primary amino group (—NH 2 ) or an alkyl group (eg, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, etc.) It can be.
- the polyalkyleneimine of this form may be linear (that is, not containing a tertiary amino group) or branched, but from the viewpoint of improving reactivity, branched polyalkyleneimine It is preferable that Further, the branched structure when the polyalkyleneimine is branched is not particularly limited, and may be a network structure or a dendrimer structure. However, a dendrimer structure is preferable in order to improve the coordination property to the nitrogen atom. In the case of such a structure, a large number of amino groups exist in the terminal part (side chain part) of the dendrimer / hyperbranched polymer, and the amino groups exist uniformly and densely on the outermost layer of the underlayer. And the coordination interaction with the metal atom can be further enhanced. In the case of a branched polyalkyleneimine, the content ratios of the primary amino group, the secondary amino group, and the tertiary amino group are not particularly limited.
- the ends of the A 2 side of the polymer having a partial structure represented by the general formula (2) is usually an amino group.
- the terminal may be a group other than an amino group (for example, a hydrogen atom or an alkyl group).
- the n1-valent organic group as Y 1 is not particularly limited, and the n1-valent substituted or unsubstituted aromatic residue, or the n1-valent substituted or unsubstituted aliphatic carbonization A hydrogen residue is mentioned.
- the “aromatic residue” means a group obtained by removing n1 hydrogen atoms from an aromatic ring such as an aromatic hydrocarbon ring, a heterocyclic aromatic ring, or a condensed aromatic ring.
- the “aliphatic hydrocarbon residue” means a group obtained by removing n1 hydrogen atoms from an aliphatic hydrocarbon.
- n1-valent aromatic residue as Y 1 is not particularly limited.
- n1 is 2, for example, a substituted or unsubstituted arylene group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms can be given. These groups may be bonded through the above-described divalent linking group.
- the arylene group having 6 to 30 carbon atoms is the same as the arylene group having 6 to 30 carbon atoms in the divalent linking group.
- heteroarylene group having 1 to 30 carbon atoms in addition to a group derived from a heterocyclic ring containing no nitrogen atom as a heteroarylene group in a divalent linking group, pyridine, pyrimidine, pyrazine, triazine, carbazole, carboline, Diazacarbazole (also called monoazacarboline, which shows a ring structure in which one of carbon atoms constituting carboline is replaced by nitrogen atom), pyrrole, quinoline, isoquinoline, quinolone, isoquinolone, piperidine, coumarin, benzimidazole, benzo Imidazolone, benzoxazole, benzoisoxazole, benzoxazolone, benzothiazole, benzothiazolethione, benzothiazolone, benzisothiazolone, indole, carbazole, pyrazole, imidazole, oxazo , Isoxazole, thiox
- n1-valent aliphatic hydrocarbon residue as Y 1 is not particularly limited.
- n1 is 2, for example, a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms and a substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms can be mentioned.
- the substituent in the case where the aromatic residue or aliphatic hydrocarbon residue has a substituent is not particularly limited, and the substituents exemplified in the above A 1 or A 3 are also preferably exemplified.
- a substituted or unsubstituted aryl group having 6 to 12 carbon atoms a substituted or unsubstituted heteroaryl group having 1 to 12 carbon atoms
- a substituted or unsubstituted arylene group having 6 to 12 carbon atoms substituted or unsubstituted
- substituted or unsubstituted And a heteroarylene group having 1 to 12 carbon atoms a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.
- Y 1 is preferably an n1-valent aromatic residue, more preferably a group derived from benzene (phenyl group, phenylene group, etc.) and a part thereof from the viewpoint of obtaining appropriate solubility. Includes a heterocyclic group (pyridyl group, pyrazyl group, etc.) substituted with nitrogen, or a group derived from a substituted or unsubstituted structure represented by the general formula (4). Particularly preferably, Y 1 includes a group derived from the structure represented by the general formula (4).
- those having a carbazole mother nucleus, an azacarbazole mother nucleus, and a fluorene mother nucleus having a high electron transporting property (the following Y-5, Y-5, N-12 to N-34, N-37, N- 38).
- Y 1 The preferred structure of Y 1 is given below.
- Y-1 ⁇ Y-15 a group represented by N-12 ⁇ N-38, N-46 ⁇ N-47 may be used as Y 1.
- R 31 and R 32 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, substituted or unsubstituted An unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and a substituted or unsubstituted alkyloxy group having 1 to 20 carbon atoms.
- These specific groups are the same as those exemplified above.
- condensed ring structures such as Y-2 to Y-5 and Y-9 to Y-12 are preferable. Since such a condensed ring structure has high carrier transportability, even if the underlayer is in contact with the photoelectric conversion layer, the electron transport layer, or the like of the organic photoelectric conversion element, the carrier can be sufficiently transported, and power generation efficiency can be improved. This is because the decrease can be suppressed.
- the divalent organic group as Y 2 in the general formula (2) is not particularly limited, and is preferably a divalent substituted or unsubstituted aromatic residue. Examples thereof include a substituted or unsubstituted arylene group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms. These groups may be bonded through the above-described divalent linking group. Specific groups of the arylene group, the heteroarylene group, and the substituent when these have a substituent are the same as those of the arylene group, the heteroarylene group, and the substituent in Y 1 .
- it is a substituted or unsubstituted arylene group having 6 to 12 carbon atoms, a substituted or unsubstituted heteroarylene group having 1 to 12 carbon atoms, more preferably a phenylene group from the viewpoint of obtaining appropriate solubility, or It includes a divalent group derived from a structure represented by the above general formula (4) which is substituted or unsubstituted. Specifically, it is a divalent group represented by Y-1 to Y-14 or N-12 to N-38. In one embodiment of the present invention, Y 2 includes a structure represented by the general formula (4).
- Such a condensed ring structure has high carrier transportability, even when the underlayer is in contact with the photoelectric conversion layer, the electron transport layer, or the like of the organic photoelectric conversion element, the carrier can be sufficiently transported and power generation can be performed. The decrease in efficiency can be suppressed.
- the (n2 + 2) -valent organic group as Y 3 is not particularly limited.
- a (n2 + 2) -valent group represented by the following general formula (3A) or (3B) can be given.
- n2 lines below X 1 and X 2 indicate the linking site with A 1, and [] indicates the repeating site.
- R 41 to R 43 are a hydrogen atom or a methyl group. Each R 41 to R 43 may be the same or different.
- X 1 is a single bond (-), a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted carbon atom number of 3 to 20 cycloalkylene group, substituted or unsubstituted arylene group having 6 to 30 carbon atoms, substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms, or alkylene chain having 1 to 20 carbon atoms Represents a substituted or unsubstituted alkyleneoxycarbonyl group.
- the carbon atom of the carbonyl group (—CO—) is bonded to the carbon atom of the main chain (in this case, an acrylic polymer is used).
- the alkylene group having 1 to 20 carbon atoms is not particularly limited, and examples thereof include the same alkylene groups as described above.
- a linear or branched alkylene group having 1 to 15 carbon atoms is preferable, and a linear or branched alkylene group having 1 to 12 carbon atoms is more preferable.
- the substituent is the same as the substituent in the nitrogen-containing aromatic ring.
- X 1 is a single bond ( ⁇ ), a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, or 1 to 1 carbon atoms from the viewpoint of obtaining appropriate solubility.
- a substituted or unsubstituted alkyleneoxycarbonyl group having 20 alkylene chains is preferred, and in terms of the density of substituents that interact with Group 11 elements, a single bond (-), substituted or unsubstituted carbon atoms of 6 to 12 Are preferably substituted or unsubstituted alkyleneoxycarbonyl groups having 1 to 8 carbon atoms.
- X 1 represents a substituted or unsubstituted (n2 + 1) valent aromatic residue or a substituted or unsubstituted (n2 + 1) -valent aliphatic hydrocarbon residue.
- the substituted or unsubstituted alkylene group having 1 to 20 carbon atoms the substituted or unsubstituted cycloalkylene group having 3 to 20 carbon atoms, the substituted or unsubstituted 6 to 30 carbon atoms, and the like.
- a group obtained by further removing n2 hydrogen atoms from a substituted or unsubstituted arylene group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroarylene group having 1 to 30 carbon atoms is preferable. These specific groups and substituents are the same as described above.
- X 2 as Y 3 includes a structure represented by the general formula (4). Since such a condensed ring structure has high carrier transportability, even when the underlayer is in contact with the photoelectric conversion layer, the electron transport layer, or the like of the organic photoelectric conversion element, the carrier can be sufficiently transported and power generation can be performed. The decrease in efficiency can be suppressed.
- R 41 to R 43 each independently represents a hydrogen atom or a methyl group.
- R 44 is a single bond (—), a substituted or unsubstituted linear or branched alkylene group having 1 to 12 carbon atoms, or an alkyleneoxycarbonyl group having 1 to 12 carbon atoms, preferably Is a single bond (-) or a straight-chain alkylene group having 1 to 6 carbon atoms (for example, methylene group, ethylene group, pentamethylene group).
- the substituent at this time is the same as the substituent in the nitrogen-containing aromatic ring.
- it is a group having a condensed ring structure such as Y-21 or Y-22 from the viewpoint of improving carrier transportability and suppressing a decrease in power generation efficiency, and particularly preferably a base layer is formed by a coating method. From the viewpoint of improving the solubility of the nitrogen-containing organic compound in the formation, it has a fluorene mother nucleus and an alkyl chain at the 9-position of fluorene (Y-21).
- the weight average molecular weight of the nitrogen-containing organic compound is not particularly limited, but is preferably a polymer compound having a weight average molecular weight of 3000 or more from the viewpoint of film quality uniformity, conversion efficiency, and durability.
- the weight average molecular weight is more preferably 4000 or more, and still more preferably 5000 or more.
- the upper limit of the weight average molecular weight of a nitrogen-containing organic compound is not specifically limited, It is preferable that it is 50000 or less, and it is more preferable that it is 30000 or less.
- the weight average molecular weight can be measured by gel permeation chromatography (GPC) (standard substance).
- the weight average molecular weight (Mw) of the nitrogen-containing organic compound according to the present invention can be measured by GPC (gel permeation chromatography) using THF (tetrahydrofuran) as a column solvent. it can.
- THF tetrahydrofuran
- the molecular weight of the main chain is a precursor one step before the production process of the nitrogen-containing compound of the present invention (compound whose substituent is an ⁇ -bromoalkyl group). You may confirm molecular weight by measuring by.
- the nitrogen-containing organic compound according to the present invention is obtained from the precursor by a polymer reaction, and the length of the main chain does not change greatly. Therefore, the weight average molecular weight of the nitrogen-containing organic compound is the weight of the precursor. It can be easily estimated from the average molecular weight.
- GPC measurement conditions are as follows. That is, the column is stabilized at 40 ° C., THF (tetrahydrofuran) is flowed at a flow rate of 1 ml / min, and a sample having a concentration of 1 mg / ml is injected and measured.
- THF tetrahydrofuran
- the column it is preferable to use a combination of commercially available polystyrene gel columns.
- a refractive index detector (RI detector) or a UV detector is preferably used.
- the molecular weight distribution of the sample is calculated using a calibration curve created using monodisperse polystyrene standard particles. About 10 points are preferably used as polystyrene for preparing a calibration curve.
- the polymerization average molecular weight of the nitrogen-containing organic compound is a value measured under the following measurement conditions.
- the method for producing the nitrogen-containing organic compound according to the present invention is not particularly limited, and a known production method can be applied in the same manner or appropriately modified.
- the nitrogen-containing organic compound according to the present invention can be synthesized with reference to ADVANCED MATERIALS 2007, 19, 2010 and the like.
- nitrogen-containing organic compounds according to the present invention include those having the following structure.
- the present invention is not limited to these.
- a compound is prescribed
- the thickness of the underlying layer is not particularly limited, but is usually 1 to 2000 nm. From the viewpoint of obtaining a uniform metal thin film layer, the thickness is preferably 3 nm or more. Further, from the viewpoint of maintaining high transmittance and low resistance, the thickness is preferably 1000 nm or less, and more preferably 200 nm or less. More preferably, it is in the range of 5 to 30 nm, more preferably 5 to 25 nm, and particularly preferably 5 to 20 nm.
- the underlayer may contain other materials within a range that does not impair the effect of the nitrogen-containing organic compound according to the present invention.
- the underlayer when an underlayer is disposed between the photoelectric conversion layer and the metal thin film layer as the cathode, the underlayer can contain other electron transport materials.
- lithium fluoride, cesium carbonate, or the like may be included.
- the metal thin film layer 3 includes a metal element belonging to Group 11 of the periodic table, and has high conductivity as an electrode material and high transparency. When a transparent conductive film is used as an electrode, the metal thin film layer actually plays a role as a conductive material.
- metal elements belonging to Group 11 of the periodic table include gold (Au), silver (Ag), and copper (Cu). These metal elements have a deep work function and are stable, and can improve the durability of the transparent conductive film (transparent electrode). These may be used as a simple substance or as an alloy. Examples of alloys include a combination of at least two kinds of gold (Au), silver (Ag), and copper (Cu), and at least one kind of gold (Au), silver (Ag), and copper (Cu), and aluminum ( There are those to which one or more kinds of metals such as Al), palladium (Pd), platinum (Pt), neodymium (Nd), bismuth (Bi) are added.
- silver, copper, or an alloy thereof is preferable from the viewpoint of conductivity, and more preferably silver or a silver alloy (for example, Ag—Au, Ag—Au—Cu, Ag—Au—Nd, Ag—Bi, etc.) Especially preferred is silver.
- silver or a silver alloy for example, Ag—Au, Ag—Au—Cu, Ag—Au—Nd, Ag—Bi, etc.
- the metal materials are usually opaque, it is necessary to form a thin film in order to obtain transparency.
- the metal is easily isolated in an island shape by film growth of a nuclear growth type (Volume-Weber: VW type), and when a group 11 metal (for example, silver) is deposited on a normal substrate, If it is 10 nm or less, it usually has an island-like structure, and since there is no continuity between islands, an insulating thin film is formed.
- the metal film formed by the conventional method has a trade-off relationship between transparency and conductivity, and it has been difficult to achieve both.
- a metal layer is formed on an underlayer having a large interaction with a metal element belonging to Group 11 of the periodic table, a single-layer growth type (Frank-van der Merwe: FW type) film growth is performed.
- FW type single-layer growth type
- a transparent and highly conductive metal thin film can be obtained. Therefore, a transparent conductive film (transparent electrode) in which conductivity is ensured while maintaining light transmittance as a thin film thickness can be obtained.
- the thickness of the metal thin film layer 3 is 2 to 10 nm.
- the film thickness is less than 2 nm, the sheet resistance increases and the function as a conductive film cannot be achieved.
- the film thickness is 10 nm or less, the visible light transmittance is sufficiently ensured and the transparency can be secured.
- the thickness is preferably 5 to 8 nm from the viewpoint of achieving both transparency and conductivity.
- the metal thin film layer 3 has a thickness of 10 to 30 nm. When the thickness of the metal thin film layer 3 is within such a range, the metal thin film layer 3 becomes translucent, and by using this, it is suitable for a semi-transmissive type (see-through type) having moderate light shielding properties. The advantage is obtained.
- the metal thin film layer 3 may contain other materials in addition to the metal elements as long as the transparency and conductivity are not impaired. Specifically, metal salts and chelating agents such as sodium carbonate and EDTA for the purpose of adjusting the hardness of the membrane; anionic, cationic and nonionic surfactants for the purpose of adjusting the surface tension of the membrane; For the purpose of reducing electrical resistance with the organic semiconductor layer, an electron transportable material such as an alkali metal compound such as lithium fluoride can be added. Furthermore, when the metal thin film layer 3 is formed by a die coating method, an ink jet method, or the like, which will be described later, the solvent and additives used for film formation can be included in the metal thin film layer 3.
- metal salts and chelating agents such as sodium carbonate and EDTA for the purpose of adjusting the hardness of the membrane
- anionic, cationic and nonionic surfactants for the purpose of adjusting the surface tension of the membrane
- an electron transportable material such as an alkali metal compound such as lithium flu
- the protective layer 4 is provided on the light incident side of the metal thin film layer 3 and has a function of suppressing reflection of sunlight on the surface of the metal thin film layer.
- the metal thin film layer 3 is a material having a high refractive index although it is a thin film, it has a relatively high reflectance.
- the protective layer 4 is formed on the metal thin film layer 3 positioned on the outermost surface. It is formed.
- the base layer 2 exists on the substrate side of the metal thin film layer 3, the base layer 2 can suppress reflection of light from the substrate side.
- a base layer, a hole transport layer, and an electron transport layer are located on both surfaces of the metal thin film layer as in the case where a transparent conductive film is used as the anode (first electrode) 11, these layers are Since it can function as a protective layer, it is not necessary to provide a separate protective layer.
- the material constituting the protective layer is preferably a material having a low refractive index so that the reflection of sunlight can be sufficiently suppressed.
- the refractive index of the protective layer is preferably 1.5 to 1.8, more preferably 1.6 to 1.7.
- Specific materials include known materials used for sealing organic photoelectric conversion elements and known materials used as substrates for organic photoelectric conversion elements.
- a material for forming a sealing layer As the protective layer in the cathode (second electrode) 12 of the organic photoelectric conversion element shown in FIG. 1, it is preferable to use a material for forming a sealing layer. Specifically, a cap made of aluminum or glass is sealed by bonding with an adhesive, and a plastic film on which a gas barrier layer such as aluminum, silicon oxide, or aluminum oxide is formed is bonded to an organic photoelectric conversion element.
- a method of bonding with an agent a method of spin-coating an organic polymer material (polyvinyl alcohol, etc.) having a high gas barrier property, an inorganic thin film (silicon oxide, aluminum oxide, etc.) or an organic film (Parylene (registered trademark), etc.) having a high gas barrier property ) Under vacuum, and a method of laminating them in a composite manner.
- an organic film made of parylene (registered trademark), which is a paraxylylene polymer is preferable in terms of an appropriate refractive index and high gas barrier properties.
- Parylene (registered trademark) is commercially available under the trade names of Parylene HT, Parylene C, Parylene N, Parylene D, etc., manufactured by Parylene, Japan.
- a light-emitting material such as a metal complex such as tris (8-quinolinolato) aluminum complex (Alq3) or the above-described nitrogen-containing organic compound according to the present invention may be used as the protective layer.
- the thickness of the protective layer is not particularly limited, but is preferably 150 nm or less from the viewpoint of suppressing a decrease in transmittance due to optical interference, and more preferably 10 nm or more from the viewpoint of gas barrier properties. More preferably, it is in the range of 20 to 50 nm.
- a method for producing a transparent conductive film according to an embodiment of the present invention includes a step of forming a nitrogen-containing organic compound to form a foundation layer, and a transition metal element belonging to Group 11 of the periodic table on the foundation layer. Forming a metal thin film layer having a thickness of 2 to 10 nm or 10 to 30 nm. By forming a metal thin film layer on an underlayer containing a nitrogen-containing organic compound, a continuous metal thin film layer having a very thin film thickness can be formed by a simple method. A transparent conductive film that is compatible with high transparency is obtained.
- the transparent conductive film is formed on the substrate 25 or the photoelectric conversion layers 14, 14 a and 14 b and the electron transport layer 27 constituting the organic photoelectric conversion element.
- Examples of the method for forming the underlayer include a vapor deposition method and a coating method (including a casting method and a spin coating method). Of these, the coating method is preferred. The coating method is also excellent in production speed.
- a method for forming the underlayer by the coating method for example, the nitrogen-containing organic compound according to the present invention and, if necessary, other additives (for example, other electron transporting materials) are dissolved in an appropriate solvent to form electrons.
- a transport layer forming solution is prepared. Next, there is a method in which this solution is applied on a substrate, dried, and then heat-treated.
- the solvent is not particularly limited as long as it can dissolve nitrogen-containing organic compounds and the like, but alcohols such as isopropanol and n-butanol; hydrogen atoms of alcohols such as hexafluoroisopropanol and tetrafluoropropanol are substituted with halogen atoms.
- Halogen-containing alcohols dimethyl sulfoxide, dimethylformamide and the like. These may be used individually by 1 type, and may mix and use 2 or more types. Among these, alcohol, halogen-containing alcohol, or a mixed solvent thereof is preferable.
- an intermediate layer can be easily formed on a photoelectric conversion layer that does not dissolve in a highly polar solvent by a coating method.
- a solvent containing a fluorinated alcohol in which a hydrogen atom of the alcohol is substituted with a fluorine atom is preferably used. Since the nitrogen-containing organic compound of the present invention is excellent in solubility in alcohols and fluorinated alcohols, it is preferable to form a film using these solvents. That is, the underlayer is preferably formed by a production method including a coating process using a solvent containing a fluorinated alcohol.
- the concentration of the nitrogen-containing organic compound in the solvent and, if necessary, other additives is not particularly limited.
- the concentration in the solution is 0.005 to 0.5% by mass.
- the coating method is not limited, and examples thereof include spin coating, casting from a solution, dip coating, blade coating, wire bar coating, gravure coating, and spray coating.
- patterning can also be performed by a printing method such as an ink jet method, a screen printing method, a relief printing method, an intaglio printing method, an offset printing method, or a flexographic printing method.
- the heat treatment conditions after coating are not particularly limited as long as the electron transport layer can be formed.
- the heat treatment temperature is preferably room temperature (25 ° C.) to 180 ° C., more preferably 60 to 120 ° C. It is.
- the heat treatment time is preferably 10 seconds to 10 minutes, more preferably 30 seconds to 5 minutes.
- the nitrogen-containing organic compound according to the present invention can be used together with a crosslinking agent in combination with a crosslinking agent, since the molecular weight increases and the charge transportability increases by crosslinking during or after coating film formation.
- a crosslinking agent examples include known crosslinking agents such as an epoxy crosslinking agent, an oxetane crosslinking agent, an isocyanate crosslinking agent, an alkoxysilane crosslinking agent, and a vinyl crosslinking agent.
- a dry method such as a vacuum deposition method or a sputtering method
- a metal ink in which a nano-sized metal ink is dispersed in a solvent, and no organic material remains after coating and drying without using a binder wet methods such as a method of applying a metal ink using such an ink (for example, TEC-PR-010 TEC-PR-010 TEC-CO-010 manufactured by Inktec Co., Ltd., and silver complex described in Japanese Patent No. 4452841)
- Any of the inks can be used.
- a vacuum evaporation method is used.
- the conditions for the vapor deposition may be appropriately selected within the range of, for example, a degree of vacuum of 10 ⁇ 6 to 10 ⁇ 3 Pa, a deposition rate of 0.01 to 50 nm / second, and a substrate temperature of ⁇ 50 to + 150 ° C.
- the anode is preferably composed of a material having a relatively large work function compared to the cathode, and conversely, the cathode is composed of a material having a relatively small work function compared to the anode. preferable.
- the anode 11 in the normal layer type organic photoelectric conversion element 10 shown in FIG. 1 has a relatively large work function (for example, ⁇ 4.5 eV or less, preferably ⁇ 4.7 eV or less) and is transparent (380 to 800 nm).
- the electrode material is preferably made of an electrode material capable of transmitting the light.
- the normal cathode 12 can be made of an electrode material with low translucency.
- An electrode having a light-transmitting property is called a transparent electrode, whereas an electrode having a low light-transmitting property is called a counter electrode.
- a transparent electrode an electrode having a light-transmitting property
- a counter electrode an electrode having a low light-transmitting property
- both anode and a cathode are comprised from a transparent material, it becomes a transflective type (see-through type) organic photoelectric conversion element (organic thin-film solar cell).
- examples of the electrode material used for the anode (first electrode) include metals such as gold, silver, platinum, and nickel; indium tin oxide (ITO) ), SnO 2, ZnO, transparent conductive metal oxides such as indium zinc oxide (IZO); metal nanowires, or carbon material such as carbon nanotubes and the like. It is also possible to use a conductive polymer as the anode electrode material.
- Examples of the conductive polymer that can be used for the anode include PEDOT: PSS, polypyrrole, polyaniline, polythiophene, polythienylene vinylene, polyazulene, polyisothianaphthene, polycarbazole, polyacetylene, polyphenylene, polyphenylene vinylene, polyacene, and polyphenyl.
- Examples include acetylene, polydiacetylene, polynaphthalene, and derivatives thereof.
- These electrode materials may be used alone or as a mixture of two or more materials. It is also possible to form an electrode by laminating two or more layers made of each material.
- the thickness of the anode is not particularly limited, but is usually 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- examples of the electrode material used for the cathode (second electrode) include metals, alloys, electronic conductive compounds, and these having a work function of ⁇ 4.5 eV or less. Of the mixture. Specifically, gold (-5.1 eV), silver (-4.7 eV), copper (-4.7 eV), zinc (-4.5 eV), platinum (-6.3 eV), nickel (-5. Metals such as 0 eV); indium tin oxide (ITO) ( ⁇ 4.8 eV), ZnO ( ⁇ 4.5 eV), molybdenum oxide ( ⁇ 5.4 eV), indium zinc oxide (IZO) ( ⁇ 5.3 eV), etc.
- Examples of the conductive metal oxides include nanowires and nanoparticles of the above metals.
- the inside of () shows the work function of each material.
- indium tin oxide (ITO), molybdenum oxide, copper, silver, and gold are preferable
- indium tin oxide (ITO) molybdenum oxide, copper, and silver are more preferable
- silver is particularly preferable.
- the thickness of the cathode is not particularly limited, but is usually 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- the work function may vary by about ⁇ 0.3 eV depending on the measurement method and the surface treatment state of the thin film (with or without ozone oxidation, etc.), so another index may be determined by the first ionization potential. Yes (but applicable only to metallic elements)
- the first ionization is used instead of aluminum which has a small ionization potential and is easily oxidized as the cathode. It is possible to use a metal having a large potential and a deep work function.
- the first ionization potential of aluminum is 138 kcal / mol
- the ionization potential of calcium is 140 kcal / mol.
- Examples of metals that have a large first ionization potential and are more stable than these easily oxidized metals include gold (212 kcal / mol), platinum (208 kcal / mol), nickel (176 kcal / mol), silver (174 kcal / mol), and copper. (178 kcal / mol), zinc (216 kcal / mol), and the like.
- gold 212 kcal / mol
- platinum 208 kcal / mol
- nickel 176 kcal / mol
- silver 174 kcal / mol
- copper 178 kcal / mol
- zinc 216 kcal / mol
- an element belonging to Group 11 gold, silver or copper
- the conversion efficiency and durability can be improved by using gold, silver or copper as the cathode.
- the cathode 12 is positioned on the substrate 25 side where light enters and the anode 11 is positioned on the opposite side. Therefore, the anode 11 in the reverse layer type shown in FIG. 4 has a relatively large work function and is usually made of an electrode material having low translucency. On the other hand, the cathode 12 preferably has a relatively small work function and is made of a transparent electrode material.
- an electrode material used for the anode As an electrode material used for the anode (counter electrode), a metal, an alloy, an electron conductive compound, and a mixture thereof having a work function of ⁇ 4.5 eV or less Is used.
- a material is the same as that exemplified for the cathode of the normal layer type organic photoelectric conversion element, and preferably gold, silver, platinum, nickel or the like is used.
- silver is preferably used from the viewpoints of hole extraction performance, light reflectance, and durability against oxidation and the like.
- These electrode materials may be used alone or as a mixture of two or more materials. It is also possible to form an electrode by laminating two or more layers made of each material.
- the thickness of the anode (counter electrode) is not particularly limited, but is usually 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- an electrode material used for the cathode for example, a metal such as gold, silver, copper, platinum, rhodium, ruthenium, aluminum, magnesium, indium and nickel Transparent metal oxides such as indium tin oxide (ITO), SnO 2 , ZnO and indium zinc oxide (IZO); carbon materials such as metal nanowires, carbon nanoparticles, carbon nanowires, and carbon nanostructures Etc. It is also possible to use a conductive polymer as the anode electrode material. These electrode materials may be used alone or as a mixture of two or more materials. It is also possible to form an electrode by laminating two or more layers made of each material.
- a metal such as gold, silver, copper, platinum, rhodium, ruthenium, aluminum, magnesium, indium and nickel
- Transparent metal oxides such as indium tin oxide (ITO), SnO 2 , ZnO and indium zinc oxide (IZO)
- carbon materials such as metal nanowires, carbon nanoparticles
- a transparent and highly conductive cathode can be formed by a coating method.
- an auxiliary electrode having a thickness of about 1 to 20 nm is formed on the side facing the anode (counter electrode) using, for example, aluminum, aluminum alloy, silver, silver compound, or the like.
- a cathode (transparent electrode) can be obtained by providing a conductive polymer film exemplified as the anode (transparent electrode) material of the above-mentioned normal layer type organic photoelectric conversion element.
- the thickness of the cathode (transparent electrode) is not particularly limited, but is usually 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- the organic photoelectric conversion element of this embodiment may include an electron transport layer as needed between the photoelectric conversion layer and the anode (cathode).
- the electron transport layer has a function of transporting electrons and has a property of extremely small ability to transport holes (for example, 1/10 or less of electron mobility).
- the electron transport layer is provided between the photoelectric conversion layer and the cathode, and prevents the recombination of electrons and holes by blocking the movement of holes while transporting electrons to the cathode. it can.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq3), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metal of these metal complexes is In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga or Pb can also be used as the electron transport material. In addition, metal-free phthalocyanine or metal phthalocyanine, or a compound in which the terminal of these compounds is substituted with an alkyl group or a sulfonic acid group can be preferably used as an electron transporting material.
- an electron transport material having high n property doped with impurities can also be used.
- TPD N, N′-bis (3-methylphenyl)-(1,1′
- xazizazole derivatives imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, annealed amine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, silazane derivatives, etc.
- polymers such as phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, and derivatives thereof can be preferably used.
- the base layer constituting the transparent conductive film of the present invention can function as the electron transport layer. Therefore, when the transparent conductive film of the present invention is used as the second electrode 12 in the normal layer type organic photoelectric conversion device (the device of FIG. 1 or FIG. 5) of one embodiment of the present invention, the underlayer is an electron. It can also serve as the transport layer 27. Thereby, the conventional electron transport layer can be omitted. In addition, when an electron transport layer is further provided between the underlayer and the photoelectric conversion layer, the electron transport performance and the hole block performance can be further improved.
- the formation method of the electron transport layer is not particularly limited, and a known production method can be applied similarly or appropriately modified.
- the thickness of the electron transport layer is not particularly limited, but is usually 1 to 2000 nm. From the viewpoint of further improving the leak prevention effect, the thickness is preferably 3 nm or more. Further, from the viewpoint of maintaining high transmittance and low resistance, the thickness is preferably 1000 nm or less, and more preferably 200 nm or less. More preferably, it is in the range of 5 to 20 nm.
- the conductivity of the electron transport layer is preferably as high as possible. However, if the conductivity is too high, the ability to prevent holes from moving may be reduced, and rectification may be reduced. Therefore, the conductivity of the electron transport layer is preferably 10 ⁇ 5 to 100 S / cm, and more preferably 10 ⁇ 4 to 1 S / cm.
- the organic photoelectric conversion device of the present invention may include a hole transport layer between the photoelectric conversion layer and the anode as necessary.
- the hole transport layer has a function of transporting holes and a property of extremely small ability to transport electrons (for example, 1/10 or less of the mobility of holes).
- the hole transport layer is provided between the photoelectric conversion layer and the anode and prevents recombination of electrons and holes by blocking the movement of electrons while transporting holes to the anode. Can do.
- the hole transport material used for the hole transport layer is not particularly limited, and materials that can be used in this technical field can be appropriately employed.
- triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, and pyrazolone derivatives phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives , Stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- the hole transport layer may be formed using an inorganic compound such as a metal oxide such as molybdenum, vanadium, or tungsten, or a mixture thereof.
- metal oxides vanadium oxide, molybdenum oxide, and the like are preferably suitable and preferable in work function.
- metals having a large oxidation number particularly molybdenum oxide, have a large change in work function after deposition.
- the work function which was good ( ⁇ 5.4 eV) immediately after deposition, suddenly becomes deeper by touching oxygen etc. ( ⁇ -6.0 eV), known to be a carrier transport trap.
- a polymer material in which a structural unit contained in the above compound is introduced into a polymer chain, or a polymer material having the above compound as a polymer main chain can be used as a hole transport material.
- a p-type hole transport material as described in 139 can also be used.
- a hole transport material having a high p property doped with impurities can also be used.
- JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like are preferable.
- PEDOT poly-3,4-ethylenedioxythiophene
- PSS polystyrene sulfonic acid
- polyaniline are preferable.
- these hole transport materials may be used individually by 1 type, and may use 2 or more types together. It is also possible to form a hole transport layer by laminating two or more layers made of each material.
- the formation method of the hole transport layer is not particularly limited, and a known production method can be applied similarly or appropriately modified.
- the thickness of the hole transport layer is not particularly limited, but is usually 1 to 2000 nm. From the viewpoint of further improving the leak prevention effect, the thickness is preferably 5 nm or more. Further, from the viewpoint of maintaining high transmittance and low resistance, the thickness is preferably 1000 nm or less, and more preferably 200 nm or less.
- the conductivity of the hole transport layer is preferably as high as possible. However, if the conductivity is too high, the ability to prevent electrons from moving may be reduced, and rectification may be reduced. Accordingly, the conductivity of the hole transport layer is preferably 10 ⁇ 5 to 1 S / cm, and more preferably 10 ⁇ 4 to 10 ⁇ 2 S / cm.
- the material used for the other intermediate layer is not particularly limited as long as it is a material having both conductivity and translucency.
- Transparent metal oxides such as ITO, AZO, FTO, and titanium oxide exemplified as the above-mentioned electrode material
- Metals such as Ag, Al, Au, and carbon materials such as carbon nanoparticles and carbon nanowires, and conductive polymers such as PEDOT: PSS and polyaniline can be used. These materials may be used alone or in combination of two or more. It is also possible to form an intermediate layer by laminating two or more layers made of each material.
- the conductivity of the other intermediate layer is preferably high from the viewpoint of charge transport, and specifically, it is preferably 5 to 50000 S / cm, more preferably 100 to 10,000 S / cm.
- the thickness of the charge recombination layer is not particularly limited, but is preferably 1 to 1000 nm, and preferably 5 to 50 nm. Leakage can be suppressed by setting the thickness to 1 nm or more. On the other hand, if the thickness is 1000 nm or less, the transparency can be increased.
- the transparent conductive film according to the present invention can be used as another intermediate layer (intermediate electrode). That is, the charge recombination layer 38 shown in FIG. 5 can be the transparent conductive film 1A shown in FIG. At this time, it is preferable to dispose a base layer on the first photoelectric conversion layer 14a side and a metal thin film layer on the second photoelectric conversion layer 14b side. In such a case, the underlayer containing the nitrogen-containing organic compound can function as an electron transport layer.
- the photoelectric conversion layer 14 essentially includes a p-type organic semiconductor material and an n-type organic semiconductor material. When light is absorbed by these photoelectric conversion materials, excitons are generated, which are separated into holes and electrons at the pn junction interface.
- p-type organic semiconductor material used for the photoelectric conversion layer examples include various condensed polycyclic aromatic low-molecular compounds and conjugated polymers.
- condensed polycyclic aromatic low molecular weight compound examples include anthracene, tetracene, pentacene, hexacene, heptacene, chrysene, picene, fluorene, pyrene, peropyrene, perylene, terylene, quaterylene, coronene, ovalene, circumanthanthene, bisanthene, zeslene.
- TTF tetrathiafulvalene
- TCNQ tetracyanoquinodimethane
- BEDTTTTF bisethylenetetrathiafulvalene
- Examples of the derivative having the above-mentioned condensed polycycle include WO 03/16599 pamphlet, WO 03/28125 pamphlet, US Pat. No. 6,690,029, JP 2004-107216 A.
- conjugated polymer examples include polythiophene such as poly-3-hexylthiophene (P3HT) and oligomers thereof, or a polymerizable group described in Technical Digest of the International PVSEC-17, Fukuoka, Japan, 2007, P1225. Polythiophene, Nature Material, (2006) vol. 5, a polythiophene-thienothiophene copolymer described in p328, a polythiophene-diketopyrrolopyrrole copolymer described in WO 2008/000664, Adv. Mater. , 2007, p4160, a polythiophene-thiazolothiazole copolymer, Nature Mat. , Vol.
- P3HT poly-3-hexylthiophene
- polypyrrole and its oligomer polyaniline, polyphenylene and its oligomer, polyphenylene vinylene and its oligomer, polythienylene vinylene and its oligomer, polyacetylene, polydiacetylene, Examples thereof include polymer materials such as ⁇ -conjugated polymers such as polysilane and polygermane.
- oligomeric materials not polymer materials, include thiophene hexamer ⁇ -seccithiophene ⁇ , ⁇ -dihexyl- ⁇ -sexualthiophene, ⁇ , ⁇ -dihexyl- ⁇ -kinkethiophene, ⁇ , ⁇ -bis (3 Oligomers such as -butoxypropyl) - ⁇ -sexithiophene can be preferably used.
- the p-type conjugated polymer has a structure in which donor units and acceptor units are alternately arranged.
- the absorption region of the p-type organic semiconductor can be expanded to a long wavelength region. That is, the p-type conjugated polymer can absorb light in a long wavelength region (for example, 700 to 1000 nm) in addition to the absorption region (for example, 400 to 700 nm) of a conventional p-type organic semiconductor. It becomes possible to efficiently absorb radiant energy over a wide range of the optical spectrum.
- the donor unit that can be included in the p-type conjugated polymer is a unit in which the LUMO level or the HOMO level is shallower than a hydrocarbon aromatic ring (benzene, naphthalene, anthracene, etc.) having the same number of ⁇ electrons. If there is, it can be used without restriction.
- fluorene examples include fluorene, silafluorene, carbazole, dithienocyclopentadiene, dithienosilacyclopentadiene, dithienopyrrole, and benzodithiophene.
- acceptor units that can be included in the p-type conjugated polymer include, for example, quinoxaline skeleton, pyrazinoquinoxaline skeleton, benzothiadiazole skeleton, benzooxadiazole skeleton, benzoselenadiazole skeleton, benzotriazole skeleton, pyrido Thiadiazole skeleton, thienopyrazine skeleton, phthalimide skeleton, 3,4-thiophenedicarboxylic acid imide skeleton, isoindigo skeleton, thienothiophene skeleton, diketopyrrolopyrrole skeleton, 4-acyl-thieno [3,4-b] thiophene skeleton, thienopyrrole Examples thereof include a dione skeleton, a thiazolothiazole skeleton, and a pyrazolo [5,1-c] [1,2,4] triazole skeleton.
- the p-type organic semiconductor material has the following general formula (5):
- the substituted or unsubstituted alkyl group, cycloalkyl group, aryl group and heteroaryl group are each a substituted or unsubstituted cyclohexane having 3 to 20 carbon atoms in the above general formula (4). Since the definition is the same as an alkyl group, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, description thereof is omitted here.
- a compound in which X 3 is a silicon atom (Si) is preferable because synthesis is easy and a crystal having high mobility and high mobility can be easily obtained.
- the molecular weight of the p-type conjugated polymer is not particularly limited, but the number average molecular weight is preferably 5,000 to 500,000, more preferably 10,000 to 100,000, and further preferably 15,000 to 50,000.
- the number average molecular weight is 5000 or more, the effect of improving the fill factor becomes more remarkable.
- the number average molecular weight is 500,000 or less, the solubility of the p-type conjugated polymer is improved, so that productivity can be increased.
- the value measured by gel permeation chromatography (GPC) is employ
- the photoelectric conversion layer in the present invention may include other p-type organic semiconductor materials.
- examples of such other p-type organic semiconductor materials include triarylamine compounds, benzidine compounds, pyrazoline compounds, styrylamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, Cyanine compounds, merocyanine compounds, oxonol compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, Fluoranthene derivatives) and metal complexes having a nitrogen-containing heterocyclic compound as a ligand.
- the mass ratio of the p-type conjugated polymer in the p-type organic semiconductor material contained in the photoelectric conversion layer is preferably 5% by mass or more, More preferably, it is 10 mass% or more, More preferably, it is 50 mass% or more, Especially preferably, it is 90 mass% or more, Most preferably, it is 100 mass%.
- the band gap of the p-type organic semiconductor material contained in the photoelectric conversion layer is preferably 1.8 eV or less, more preferably 1.6 to 1.1 eV.
- the band gap is 1.8 eV or less, sunlight can be widely absorbed.
- the band gap is 1.1 eV or more, the open circuit voltage Voc (V) is easily generated, and the conversion efficiency can be improved.
- only one p-type organic semiconductor may be used alone, or two or more p-type organic semiconductors may be used in combination.
- n-type organic semiconductor material used for the photoelectric conversion layer of this embodiment is not particularly limited as long as it is an acceptor (electron-accepting) organic compound, and materials that can be used in this technical field can be appropriately employed. .
- a perfluoro product in which a hydrogen atom of the p-type organic semiconductor material is substituted with a fluorine atom such as fullerene, carbon nanotube, and octaazaporphyrin (for example, perfluoropentacene or perfluorophthalocyanine)
- a fluorine atom such as fullerene, carbon nanotube, and octaazaporphyrin (for example, perfluoropentacene or perfluorophthalocyanine)
- aromatic carboxylic acid anhydrides such as naphthalenetetracarboxylic acid anhydride, naphthalenetetracarboxylic acid diimide, perylenetetracarboxylic acid anhydride, and perylenetetracarboxylic acid diimide, and polymer compounds containing an imidized product thereof as a skeleton.
- fullerenes, carbon nanotubes, or derivatives thereof are preferably used from the viewpoint that charge separation can be efficiently performed with a p-type organic semiconductor material at high speed (up to 50 fs). More specifically, fullerene C60, fullerene C70, fullerene C76, fullerene C78, fullerene C84, fullerene C240, fullerene C540, mixed fullerene, fullerene nanotube, multi-walled carbon nanotube, single-walled carbon nanotube, carbon nanohorn (conical type), etc.
- halogen atoms fluorine atoms, chlorine atoms, bromine atoms, iodine atoms
- substituted or unsubstituted alkyl groups alkenyl groups, alkynyl groups, aryl groups, heteroaryl groups, And a fullerene derivative substituted with a cycloalkyl group, a silyl group, an ether group, a thioether group, an amino group, or the like.
- [6,6] -phenyl C61-butyric acid methyl ester (abbreviation PCBM or PC61BM), [6,6] -phenyl C61-butyric acid-n-butyl ester (PCBnB), [6,6] -phenyl C61-butyric acid-isobutyl ester (PCBiB), [6,6] -phenyl C61-butyric acid-n-hexyl ester (PCBH), [6,6] -phenyl C71-butyric acid methyl ester (abbreviation PC71BM) Adv. Mater. , Vol.
- n-type organic semiconductor material may be used alone or in combination of two or more.
- the junction form of the p-type organic semiconductor and the n-type organic semiconductor in the photoelectric conversion layer of this embodiment is not particularly limited, and may be a planar heterojunction or a bulk heterojunction.
- a planar heterojunction is a junction in which a p-type organic semiconductor layer containing a p-type organic semiconductor and an n-type organic semiconductor layer containing an n-type organic semiconductor are stacked, and the surface where these two layers contact is the pn junction interface. It is a form.
- a bulk heterojunction (bulk heterojunction) is formed by applying a mixture of a p-type organic semiconductor and an n-type organic semiconductor, and the domain of the p-type organic semiconductor and the n-type organic semiconductor in this single layer. And have a microphase separation structure. Therefore, in a bulk heterojunction, as compared with a planar heterojunction, many pn junction interfaces exist throughout the layer. Therefore, most of the excitons generated by light absorption can reach the pn junction interface, and the efficiency leading to charge separation can be increased. For these reasons, the junction between the p-type organic semiconductor and the n-type organic semiconductor in the photoelectric conversion layer of this embodiment is preferably a bulk heterojunction.
- the mixing ratio of the p-type organic semiconductor material and the n-type organic semiconductor material contained in the photoelectric conversion layer is preferably in the range of 2: 8 to 8: 2, more preferably 3: 7 to 7 in terms of mass ratio. : 3 range.
- the film thickness of the photoelectric conversion layer is preferably 50 to 400 nm, more preferably 80 to 300 nm.
- an inorganic p-type semiconductor material and an n-type semiconductor material may be included as necessary.
- the organic photoelectric conversion element of the present invention may include a substrate as necessary.
- the substrate is preferably a member that can transmit the light that is photoelectrically converted, that is, a member that is transparent to the wavelength of the light to be photoelectrically converted.
- Suitable examples of the substrate include a glass substrate and a transparent resin substrate. It is desirable to use a transparent resin film from the viewpoint of lightness and flexibility. Further, it is desirable to use a glass substrate from the viewpoint of gas barrier properties and light transmittance.
- the transparent resin film that can be preferably used as the transparent substrate in the present invention is not particularly limited, and the material, shape, structure, thickness and the like can be appropriately selected from known ones.
- polyester resins such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN) modified polyester, polyethylene (PE) resin film, polypropylene (PP) resin film, polystyrene resin film, polyolefin resins such as cyclic olefin resin Film, vinyl resin film such as polyvinyl chloride, polyvinylidene chloride, polyether ether ketone (PEEK) resin film, polysulfone (PSF) resin film, polyether sulfone (PES) resin film, polycarbonate (PC) resin film, A polyamide resin film, a polyimide resin film, an acrylic resin film, a triacetyl cellulose (TAC) resin film, and the like can be given.
- PET polyethylene terephthalate
- PEN polyethylene naphthal
- the resin film transmittance of 80% or more in ⁇ 800 nm can be preferably applied to a transparent resin film according to the present invention.
- a transparent resin film according to the present invention is preferably a biaxially stretched polyethylene terephthalate film, a biaxially stretched polyethylene naphthalate film, a polyethersulfone film, or a polycarbonate film, and biaxially stretched. More preferred are polyethylene terephthalate films and biaxially stretched polyethylene naphthalate films.
- the glass substrate is not particularly limited and may be an alkali-containing glass substrate such as soda glass, but is preferably alkali-free glass. In the case of using alkali-free glass, it is possible to prevent sodium in the glass substrate from diffusing into the electronic element and deteriorating the characteristics of the electronic element. When using an alkali-containing glass substrate such as soda glass, it is preferable to form a sodium diffusion preventing layer on the glass substrate to prevent the diffusion of sodium atoms.
- the transparent substrate used in the present invention can be subjected to a surface treatment or an easy adhesion layer in order to ensure the wettability and adhesion of the coating solution.
- a surface treatment or an easy adhesion layer in order to ensure the wettability and adhesion of the coating solution.
- a conventionally well-known technique can be used about a surface treatment or an easily bonding layer.
- the surface treatment includes surface activation treatment such as corona discharge treatment, flame treatment, ultraviolet treatment, high frequency treatment, glow discharge treatment, active plasma treatment, and laser treatment.
- Examples of the easy adhesion layer include polyester, polyamide, polyurethane, vinyl copolymer, butadiene copolymer, acrylic copolymer, vinylidene copolymer, and epoxy copolymer.
- a barrier coat layer may be formed in advance on the transparent substrate, or a hard coat layer may be formed in advance on the opposite side to which the transparent conductive layer is transferred. Good.
- the organic photoelectric conversion element of the present invention may have various optical function layers for the purpose of more efficient light reception of sunlight.
- the optical functional layer include a light condensing layer such as an antireflection film and a microlens array, and a light diffusion layer that can scatter light reflected by the cathode and enter the power generation layer again.
- quadrangular pyramids having a side of 30 ⁇ m and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate.
- One side is preferably 10 to 100 ⁇ m. If it becomes smaller than this, the effect of diffraction will generate
- the light scattering layer examples include various antiglare layers, layers in which nanoparticles or nanowires such as metals or various inorganic oxides are dispersed in a colorless and transparent polymer, and the like.
- Examples of the method for forming the photoelectric conversion layer and the intermediate layer / electrode containing the p-type organic semiconductor material and the n-type organic semiconductor material include a vapor deposition method and a coating method (including a cast method and a spin coat method). It can. Among these, as a formation method of a photoelectric converting layer, a vapor deposition method, the apply
- the intermediate layer is preferably formed by a coating method. The coating method is also excellent in production speed.
- the coating method used in this case is not limited, and examples thereof include spin coating, casting from a solution, dip coating, blade coating, wire bar coating, gravure coating, and spray coating. Furthermore, patterning can also be performed by a printing method such as an ink jet method, a screen printing method, a relief printing method, an intaglio printing method, an offset printing method, or a flexographic printing method.
- a printing method such as an ink jet method, a screen printing method, a relief printing method, an intaglio printing method, an offset printing method, or a flexographic printing method.
- the photoelectric conversion layer After coating, it is preferable to perform heating in order to cause removal of residual solvent, moisture and gas, and increase mobility and absorption longwave by crystallization of the semiconductor material.
- annealing is performed at a predetermined temperature during the manufacturing process, a part of the particles is microscopically aggregated or crystallized and the photoelectric conversion layer can have an appropriate phase separation structure. As a result, the carrier mobility of the photoelectric conversion layer is improved and high efficiency can be obtained.
- the photoelectric conversion layer may be composed of a layer in which a p-type semiconductor and an n-type semiconductor are mixed, but may be a multi-layer or a gradation composition with a mixture ratio that is different in the film thickness direction.
- mask evaporation can be performed when the electrode is vacuum-deposited, or patterning can be performed by a known method such as etching or lift-off.
- the pattern may be formed by transferring a pattern formed on another substrate.
- the transparent conductive film according to the present invention is not only a transparent electrode of the heterojunction type organic photoelectric conversion element in which the photoelectric conversion layer includes a p-type organic semiconductor material and an n-type organic semiconductor material, but also dye sensitization. It can also be applied as a transparent electrode of a type photoelectric conversion element.
- the transparent conductive film according to the present invention can be used as the first electrode 1 or the second electrode 8 as shown in FIG. 1 of JP2012-023266A.
- the solar cell which has the organic photoelectric conversion element which concerns on this invention is provided. Since the organic photoelectric conversion element of this form has the outstanding photoelectric conversion efficiency and durability (heat resistance, light resistance), it can be used suitably for the solar cell which uses this as an electric power generation element.
- both electrodes can be made into transparent electrodes. Thus, a transflective (see-through) solar cell can be obtained.
- an optical sensor array in which the above-described organic photoelectric conversion elements are arranged in an array. That is, the organic photoelectric conversion element of this embodiment can also be used as an optical sensor array that converts an image projected on the optical sensor array into an electrical signal using the photoelectric conversion function.
- the refractive index of the protective layer was evaluated by the following method.
- ⁇ Evaluation method of refractive index> A sample in which a protective layer was coated alone was prepared by the following method. First, the alkali-free glass as a substrate is cleaned in the order of ultrasonic cleaning with Kao Clean-through KS3030 and ultrapure water as a surfactant, and ultrasonic cleaning with ultrapure water, and then dried with nitrogen blow, Finally, ultraviolet ozone cleaning was performed. Next, the protective layer (film thickness: 20 nm) used in each example was formed on the substrate. At this time, each protective layer was formed in the same manner as described in the following examples.
- each sample was subjected to light absorption treatment with a black spray using a reflective spectral film thickness meter FE-3000 (manufactured by Otsuka Electronics). The reflection of light was prevented, and the refractive index was obtained from the measurement result of the reflectance in the visible light region (400 nm to 700 nm).
- Exemplified compound 18-1 was synthesized with reference to JP2010-235575A.
- the above synthesis method is, for example, Oi, S .; Fukita, S .; Hirata, N .; Watanuki, N .; Miyano, S .; Inoue, Y .; Org. Lett. , 2001, 3, 2579.
- Preparation of transparent conductive film [Preparation of transparent conductive films 1 to 25] (Preparation of substrate)
- the alkali-free glass as the substrate is cleaned in the order of ultrasonic cleaning with Kao's Clean Through KS3030 and ultrapure water as the surfactant and then with ultrapure water, then dried with nitrogen blow, and finally UV ozone cleaning was performed.
- a metal thin film layer was formed directly on the substrate without forming a base layer.
- a base layer made of gold (Au) was formed by a vapor deposition method under the same conditions as those of the metal thin film layer described below.
- the reason why the transmittance is measured after the formation of the protective layer is to make the data equivalent to the actual configuration of the organic thin film solar cell and to reduce the influence of reflection on the surface layer (metal thin film).
- Table 1 shows the results obtained as described above.
- PEDOT-PSS CLEVIOS (registered trademark) PVP AI 4083, manufactured by Helios Co., Ltd., conductivity 1 ⁇ 10 ⁇ 3 S / cm
- An isopropanol solution containing by mass% was prepared, and the substrate was applied and dried using a blade coater whose temperature was adjusted to 65 ° C. so that the dry film thickness was about 30 nm. Then, it heat-processed for 20 second with a 120 degreeC warm air, and formed the positive hole transport layer on said 1st electrode.
- the substrate was brought into the glove box and worked in a nitrogen atmosphere.
- the obtained organic photoelectric conversion element was transferred to PDS2010 manufactured by Japan Parylene Co. without contact with the atmosphere, and a protective layer (refractive index 1.55) made of Parylene HT was formed to 20 nm.
- photoelectric conversion efficiency (eta) (%) was calculated
- energy conversion efficiency (photoelectric conversion efficiency) is so favorable that the number of photoelectric conversion efficiency (eta) (%) is large.
- the organic photoelectric conversion element for which the photoelectric conversion efficiency was evaluated was heated to 80 ° C. with a resistor connected between the anode and the cathode, and 100 mW / cm of a solar simulator (AM1.5G filter). After continuing exposure for 1000 hours with light of 2 intensity, the organic photoelectric conversion element was cooled to room temperature, and the four light receiving parts formed on the organic photoelectric conversion element in the same manner as the evaluation of the photoelectric conversion efficiency, The photoelectric conversion efficiency ⁇ (%) was determined according to the above formula (1). Next, the relative efficiency of the conversion efficiency was calculated by the following formula (2) to obtain an average value, which was used as a measure of the durability of the photoelectric conversion efficiency.
- the durability of the device was evaluated with LT80 as the time when the relative efficiency decrease rate was 80%.
- Table 1 shows the results obtained as described above. From Table 1, a transparent layer formed by laminating an underlayer formed using the nitrogen-containing organic compound according to the present invention and a metal thin film layer containing a metal element belonging to Group 11 of the periodic table and having a thickness of 2 to 10 nm. It can be seen that the organic photoelectric conversion elements 6 to 25 of the present invention using the conductive film as the cathode (second electrode) are see-through organic thin-film solar cells having high photoelectric conversion efficiency and excellent durability.
- the underlayer containing the nitrogen-containing organic compound can exhibit a function as an electron transport layer, and is high without providing an electron transport layer separately. It can be seen that efficiency and durability can be obtained.
- an underlayer using the exemplified compound 13 was formed by coating.
- a coating solution obtained by dissolving 7.5 mg of Exemplified Compound 13 in 1.0 g of 2,2,3,3-tetrafluoro-1-propanol was subjected to the conditions of 1500 rpm and 30 seconds using a spin coater.
- the film thickness was 25 nm.
- PEDOT-PSS CLEVIOS (registered trademark) PVP AI 4083, manufactured by Helios Co., Ltd., conductivity 1 ⁇ 10 ⁇ 3 S / cm
- An isopropanol solution containing by mass% was prepared, and the substrate was applied and dried using a blade coater whose temperature was adjusted to 65 ° C. so that the dry film thickness was about 30 nm. Then, it heat-processed with the warm air of 120 degreeC for 20 second, and formed the positive hole transport layer on said 1st electrode.
- the substrate was brought into the glove box and worked in a nitrogen atmosphere.
- the substrate was heat-treated at 120 ° C. for 3 minutes in a nitrogen atmosphere.
- the obtained organic photoelectric conversion element was transferred to PDS2010 manufactured by Japan Parylene Co. without contact with the atmosphere, and a protective layer (refractive index 1.55) made of Parylene HT was formed to 20 nm.
- a protective layer formed on the metal thin film layer is made of parylene C having a thickness of 20 nm formed by using parylene C instead of parylene HT (refractive index 1.55).
- An organic photoelectric conversion element 32 was obtained in the same manner except that the layer was used.
- the obtained organic photoelectric conversion element was evaluated in the same manner as the above method. The results are shown in Table 2 below.
Abstract
Description
(順層型の有機光電変換素子)
図1は、本発明の一実施形態に係る、順層型の有機光電変換素子を模式的に表した断面概略図である。
図4は、本発明の他の一実施形態に係る、逆層型の有機光電変換素子を模式的に表した断面概略図である。図4の有機光電変換素子20は、図1の有機光電変換素子10と比較して、陽極11と陰極12とが逆の位置に配置され、また、正孔輸送層26と電子輸送層27とが逆の位置に配置されている点が異なる。すなわち、逆層型の有機光電変換素子は、第一の電極が陰極12であり、第二の電極が陽極(対電極)11であり、第二の電極および光電変換層14の間に正孔輸送層26が含まれる点に特徴を有する。図4の有機光電変換素子20は、基板25上に、陰極12、電子輸送層27、光電変換層14、正孔輸送層26、および陽極(対電極)11がこの順に積層されてなる構成を有している。このような構成を有することにより、光電変換層14のpn接合界面で生成される電子は電子輸送層27を経て陰極12へと輸送され、正孔は正孔輸送層26を経て陽極(対電極)11へと輸送される。
本形態の有機光電変換素子は、陽極(カソード)および陰極(アノード)を必須に含む。本発明の透明導電膜は、上記陽極および陰極のうちどちらか一方として使用されていればよく、すなわち他方の電極は従来公知の電極材料を用いて形成されていてよい。
第一の電極および第二の電極の少なくとも一方は下地層と金属薄膜層とが積層されてなる透明導電膜である。本発明は、図2または図3に示すように、透明導電膜1が、含窒素化合物を含む下地層2と、前記下地層2上に形成され、周期表第11属の遷移金属元素を含み、厚さが2~10nmであるか、厚さが10~30nmである、金属薄膜層3と、を有する点に特徴を有する。
下地層2は含窒素有機化合物を含んで構成される。下地層2は、金属薄膜層3を形成する際の下地として機能し、電極材としての金属原子の拡散距離を減少させ、金属の凝集を抑える効果を有する。下地層2上に金属薄膜層3を形成することにより、金属薄膜層3を薄くかつ連続的に製膜することができ、その結果、薄い膜厚でも光透過率を保ちつつ、導電性が確保された透明導電膜(透明電極)が得られる。さらに、含窒素化合物を含んで構成された下地層2は、光電変換層14と導電性を担う金属薄膜層3との間に存在していても、高い発電効率および耐久性を達成することができる。
2価の連結基としては特に制限されないが、置換もしくは無置換の炭素原子数1~20のアルキレン基、置換もしくは無置換の炭素原子数3~20のシクロアルキレン基、置換もしくは無置換の炭素原子数6~30のアリーレン基、置換もしくは無置換の炭素原子数1~30のヘテロアリーレン基、置換もしくは無置換の炭素原子数1~20のアルキレンオキシ基、イミノ基が挙げられる。
ピリジン環やピリミジン環は不対電子がπ共役系に取り込まれていないπ電子欠乏系の複素芳香族環であり、これらを含有する基は11族金属元素への配位性が高い。具体的には、ピリジン環、ピリミジン環、またはこれらを含む縮合環から導かれるものである。この際、A1またはA3は、ピリジン環、ピリミジン環、またはこれらを含む縮合環から水素原子が1つ除かれてなる1価の基であってもよい。例えば、下記N-1~N-11で表される基が挙げられる。
アミノ基としては、隣接部位に電子吸引性基を有さないものが好ましい。かかるアミノ基は11族金属元素への配位性が高い。アミノ基としては、1級アミノ基、2級アミノ基、3級アミノ基、4級アミノ基(アンモニウム基)のいずれであってもよい。ただし、中性である1級アミノ基、2級アミノ基、3級アミノ基の方が金属原子の配位性が良好であるため好ましい。さらに、溶解性、塗布性の観点から3級アミノ基が好ましい。これに加えて、3級アミノ基は極性の高いNH基を有さないため、水分等の極性溶媒が膜中に残りにくく、得られる透明導電膜や有機光電変換素子の耐久性が改善される傾向がある。なお、アミノ基が4級アミノ基(アンモニウム基)であるとは、例えば、下記化合物50に示されるように、アミノ基が塩の形態であることを意味する。すなわち、本願発明に係る含窒素有機化合物は、窒素原子含有基としてのアミノ基が塩の形態である場合も含む。ここで、4級アミノ基(アンモニウム基)と塩を形成するアニオンの例は、特に制限されないが、ハロゲン原子(フッ素原子、塩素原子、臭素原子)、硫酸イオン、硝酸イオン、テトラフルオロホウ酸イオン、ヘキサフルオロリン酸などが挙げられる。これらの中でもハロゲン原子が好ましく、中でも臭素原子であることが好ましい。
ジチオカルバメート基またはチオアミド基はジチオカルバメートまたはチオアミド由来の1価の基であり、周期表第11族元素に対して特異的に配位性の高い硫黄原子を有する。ジチオカルバメート基またはチオアミド基はそれぞれ、置換位置によって2つの異性体が存在する。ジチオカルバメート基の場合、一方は窒素原子が他の基と連結する形態で、-N(RD)-C(=S)-S-RE、といった形態をとり、他方は硫黄原子が他の基と連結する形態で、-S-C(=S)-NRFRG、といった形態をとる。また、チオアミド基の場合、一方は、窒素原子が他の基と連結する形態で、-N(RH)-C(=S)-RI、といった形態をとり、他方は炭素原子が他の基と連結する形態で、-C(=S)-NRJRK、といった形態をとる。本発明においてはどちらの形態であっても好ましく用いることができる。好ましくは、複数の硫黄原子を有するジチオカルバメート基であり、より好ましくは、硫黄原子が他の基と連結する形態のジチオカルバメート基である。かかる形態の方が水分等の極性溶媒が膜中に残りにくく、耐久性が良好な傾向がある。
また、ジチオカルバメート基(-N(RD)-C(=S)-S-RE、または、-S-C(=S)-NRFRG)のRD~RGの少なくとも一つが、ジチオカルバメート基で置換されたアルキル基、シクロアルキル基、アリール基またはヘテロアリール基である形態もまた好ましい。周期表第11族元素に配位するジチオカルバメート基が高密度で存在する場合、単位面積当たりの金属原子への配位相互作用力を増大させることができるためである。さらに、ポリマー等の主鎖から多数置換されているような、ハイパーブランチポリマーのような形態(2世代以上の分岐を有する形態)を有することが好ましく、かかる観点から、窒素原子に結合するRD、RF、RGの少なくとも一つが、ジチオカルバメート基で置換されたアルキル基、シクロアルキル基、アリール基またはヘテロアリール基である。
装置:東ソー高速GPC装置 HLC-8220GPC
カラム:TOSOH TSKgel Super HM-M
検出器:RIおよび/またはUV
溶出液流速:0.6ml/分
試料濃度:0.1質量%
試料量:100μl
検量線:標準ポリスチレンにて作製:標準ポリスチレンSTK standard ポリスチレン(東ソー(株)製)Mw=1000000~500迄の13サンプルを用いて検量線(校正曲線ともいう)を作成、分子量の算出に使用した。ここで、13サンプルは、ほぼ等間隔にすることが好ましい。
金属薄膜層3は周期表第11属の金属元素を含んで構成され、電極材としての高い導電性と高い透明性とを有する。透明導電膜が電極として使用される場合、金属薄膜層が実際に導電材としての役割を担うこととなる。
保護層4は金属薄膜層3の光入射側に設けられ、金属薄膜層表面での太陽光の反射を抑制する機能を有する。金属薄膜層3は、薄膜ではあるものの高い屈折率を持つ材料であるために比較的高い反射率を有している。金属薄膜層の光入射側に保護層を形成することにより光電変換層で吸収される光量を増加させ、光電変換効率を向上させることができる。また、この保護層により周期表第11族元素からなる金属薄膜層中の金属原子のマイグレーションに起因する光電変換効率の低下等を抑制することもできる。
上記透明導電膜の製造方法は特に制限されない。本発明の一実施形態に係る透明導電膜の製造方法は、含窒素有機化合物を製膜して下地層を形成する工程と、前記下地層上に周期表第11属の遷移金属元素を含む、厚さが2~10nmまたは10~30nmの金属薄膜層を形成する工程と、を有する。含窒素有機化合物を含む下地層上に金属薄膜層を形成することにより、簡便な方法で、膜厚の非常に薄い連続的な金属薄膜層を形成することができ、その結果、高い導電性と高い透明性とを両立しうる透明導電膜が得られる。
本形態の有機光電変換素子を構成しうる、上記透明導電膜以外の、従来公知の電極材料としては光電変換素子として駆動する限りにおいては特に制限はなく、本技術分野で使用されうる電極材料を適宜採用することができる。中でも、陽極は陰極と比較して相対的に仕事関数が大きい材料から構成されることが好ましく、逆に陰極は陽極と比較して相対的に仕事関数が小さい材料から構成から構成されることが好ましい。
これらの電極材料は、1種のみを単独で使用してもよいし、2種以上の材料を混合して使用してもよい。また、各材料からなる層を2種以上積層させて電極を構成することも可能である。このうち、カーボンナノワイヤーを用いることにより、透明で導電性の高い陰極を塗布法により形成できるため好ましい。また、金属系の材料を使用する場合、陽極(対電極)と対向する側に、例えば、アルミニウム、アルミニウム合金、銀、銀化合物などを用いて、1~20nm程度の厚さの補助電極を作製した後、上述の順層型の有機光電変換素子の陽極(透明電極)材料として例示した導電性高分子の膜を設けることで、陰極(透明電極)とすることができる。なお、陰極(透明電極)の厚さは特に制限はないが、通常10nm~5μm、好ましくは50~200nmである。
本形態の有機光電変換素子は、光電変換層と陽極(カソード)との中間に必要に応じて電子輸送層を含みうる。電子輸送層は、電子を輸送する機能を有し、かつ正孔を輸送する能力が著しく小さい(例えば、電子の移動度の10分の1以下)という性質を有する。電子輸送層は、光電変換層と陰極との間に設けられ、電子を陰極へと輸送しつつ、正孔の移動を阻止することで、電子と正孔とが再結合するのを防ぐことができる。
本発明の有機光電変換素子は、光電変換層とアノードとの中間には必要に応じて正孔輸送層含みうる。正孔輸送層は、正孔を輸送する機能を有し、かつ電子を輸送する能力が著しく小さい(例えば、正孔の移動度の10分の1以下)という性質を有する。正孔輸送層は、光電変換層と陽極との間に設けられ、正孔を陽極へと輸送しつつ、電子の移動を阻止することで、電子と正孔とが再結合するのを防ぐことができる。
図5で示すような、2以上の光電変換層を有するタンデム型(多接合型)の有機光電変換素子において、光電変換層間には、他の中間層(電荷再結合層、中間電極ともいう)が配置される。
本形態の有機光電変換素子10は、上述の陰極12と陽極11との間に、光電変換層14を必須に含む。光電変換層は、光起電力効果を利用して光エネルギーを電気エネルギーに変換する機能を有する。
光電変換層に用いられるp型有機半導体材料としては、種々の縮合多環芳香族低分子化合物や共役系ポリマーが挙げられる。
本形態の光電変換層に使用されるn型有機半導体材料は、アクセプター性(電子受容性)の有機化合物であれば特に制限はなく、本技術分野で使用されうる材料を適宜採用することができる。このような化合物としては、例えば、フラーレン、カーボンナノチューブ、オクタアザポルフィリンなど、上記p型有機半導体材料の水素原子をフッ素原子に置換したパーフルオロ体(例えば、パーフルオロペンタセンやパーフルオロフタロシアニンなど)、ナフタレンテトラカルボン酸無水物、ナフタレンテトラカルボン酸ジイミド、ペリレンテトラカルボン酸無水物、ペリレンテトラカルボン酸ジイミドなどの芳香族カルボン酸無水物やそのイミド化物を骨格として含む高分子化合物などが挙げられる。
本発明の有機光電変換素子は、必要に応じて基板を含みうる。
本形態の有機光電変換素子は、上記の各部材(各層)の他に、光電変換効率の向上や、素子の寿命の向上のために、他の部材(他の層)をさらに設けてもよい。その他の部材としては、例えば、正孔注入層、電子注入層、励起子ブロック層、UV吸収層、光反射層、波長変換層などが挙げられる。また、上層に偏在した金属酸化物微粒子をより安定にするため等にシランカップリング剤等の層を設けてもよい。さらに本発明の光電変換層に隣接して金属酸化物の層を積層してもよい。
(製膜方法・表面処理方法)
p型有機半導体材料とn型有機半導体材料を含有する光電変換層、および中間層・電極の形成方法としては、蒸着法、塗布法(キャスト法、スピンコート法を含む)等を例示することができる。このうち、光電変換層の形成方法としては、蒸着法、塗布法(キャスト法、スピンコート法を含む)等を例示することができる。このうち、正孔と電子が電荷分離する界面の面積を増大させ、高い光電変換効率を有する素子を作製するためには、塗布法が好ましい。また塗布法は、製造速度にも優れている。また中間層の形成方法としては塗布法が好ましい。塗布法は、製造速度にも優れている。
本発明に係る有機光電変換素子において、電極や光電変換層、正孔輸送層、電子輸送層等は必要に応じてパターニングされていてもよいが、これらの層をパターニングする手法について特に制限はなく、公知の手法を適宜適用することができる。例えば、光電変換層、輸送層等の可溶性の材料であれば、ダイコーティング、ディップコーティング等の全面塗布後に不要部だけ拭き取ってもよいし、インクジェット法やスクリーン印刷法等の方法を使用して塗布時に直接パターニングしてもよい。一方、電極材料等の不溶性の材料の場合は、電極を真空蒸着する際にマスク蒸着を行ったり、エッチングまたはリフトオフ等の公知の方法によってパターニングすることができる。また、別の基板上に形成したパターンを転写することによってパターンを形成してもよい。
作製した有機光電変換素子が環境中の酸素、水分等で劣化しないようにするために、有機光電変換素子だけでなく有機エレクトロルミネッセンス素子等で公知の手法によって封止することが好ましい。例えば、アルミニウムまたはガラスでできたキャップを接着剤によって接着することによって封止する手法、アルミニウム、酸化ケイ素、酸化アルミニウム等のガスバリア層が形成されたプラスチックフィルムと有機光電変換素子上を接着剤で貼合する手法、ガスバリア性の高い有機高分子材料(ポリビニルアルコール等)をスピンコートする方法、ガスバリア性の高い無機薄膜(酸化ケイ素、酸化アルミニウム等)または有機膜(パリレン等)を真空下で堆積する方法、およびこれらを複合的に積層する方法等が挙げられる。
本発明に係る透明導電膜は、光電変換層がp型有機半導体材料およびn型有機半導体材料を含んで構成される上記ヘテロジャンクション型の有機光電変換素子の透明電極としてのみならず、色素増感型の光電変換素子の透明電極としても適用されうる。例えば、本発明に係る透明導電膜は、特開2012-023266号公報の図1に示されるような第一の電極1または第二の電極8として使用されうる。
本発明の他の形態によれば、本発明に係る有機光電変換素子を有する太陽電池が提供される。本形態の有機光電変換素子は、優れた光電変換効率、耐久性(耐熱性、耐光性)を有するため、これを発電素子とする太陽電池に好適に使用されうる。特に、本発明に係る透明導電膜を有機光電変換素子を構成する第一の電極および第二の電極の少なくとも一方または両方に使用することで、両電極を共に透明電極とすることができ、これにより、半透過型(シースルー型)の太陽電池を得ることができる。
下記方法で保護層を単独で塗設したサンプルを作製した。まず、基板としての無アルカリガラスを、界面活性剤としての花王社製クリンスルーKS3030と超純水とによる超音波洗浄、超純水による超音波洗浄の順で洗浄後、窒素ブローで乾燥させ、最後に紫外線オゾン洗浄を行った。次いで、基板上に、各実施例で用いた保護層(膜厚:20nm)を形成した。この際、各保護層の形成は下記の実施例に記載の方法と同様にして行った。
上記で得たサンプルの測定側の裏面を粗面化処理したのち、反射分光膜厚計 FE-3000(大塚電子製)を用いて、各サンプル黒色のスプレーで光吸収処理を行って裏面での光の反射を防止して、可視光領域(400nm~700nm)の反射率の測定結果より屈折率を求めた。
特開2008-69122号を参考として前記例示化合物10を合成した。
特開2010-235575の段落[0038]~[0040]を参考として下記例示化合物13を合成した。
下記反応により、例示化合物46を合成した。
[製造例10:例示化合物54の合成]
[製造例11:例示化合物57の合成]
化合物46-1 1.0gおよびN,N-ジエチルジチオカルバメート3水和物0.60gをテトラヒドロフラン100mlおよびN,N-ジメチルホルムアミド100mlの混合溶媒に溶解し、40℃で48時間撹拌して、反応を行った。反応終了後、析出した塩化ナトリウム濾別したのち、さらに水に再沈殿を行うことで、例示化合物57を1.1g得た(収率85%)
[製造例12:例示化合物74の合成]
〔透明導電膜1~25の作製〕
(基板の準備)
基板としての無アルカリガラスを、界面活性剤としての花王社製クリンスルーKS3030と超純水とによる超音波洗浄、超純水による超音波洗浄の順で洗浄後、窒素ブローで乾燥させ、最後に紫外線オゾン洗浄を行った。
続いて、表1に記載の化合物および比較化合物(カルシウムアセチルアセトン[Ca(acac)2]、Au、αNPDまたはTmPyPB)を、それぞれ、0.02質量%になるようにn-ブタノール:ヘキサフルオロイソプロパノール=1:1(体積比率)の混合溶媒に溶解して、溶液を調製した。この溶液を、基板を65℃に調温したブレードコーターを用いて塗布速度10mm/sで塗布し、100℃のホットプレート上で2分間加熱処理することにより、乾燥膜厚が約5nmの下地層を得た。
次に、上記下地層を製膜した基板を真空蒸着装置内に設置し、10-3Pa以下まで真空蒸着機内を減圧した後、蒸着速度で2nm/秒で表1に記載の電極材料を、それぞれ、表1に記載の膜厚で蒸着し、金属薄膜層を上記下地層上に形成した。
上記で作製した試料No.1~25の各透明電極について、シート抵抗値を測定した。シート抵抗値の測定は、抵抗率計(三菱化学社製MCP-T610)を用い、4端子4探針法定電流印加方式で行った。
次に、上記透明電極上に、日本パリレン社製、PDS2010を用いて、パリレンHT(屈折率1.55)からなる保護層を20nm形成した。
上記で作製した保護層形成後の試料No.1~25の各透明電極について、光透過率を測定した。光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、試料と同じ基材をベースラインとして行った。
〔有機光電変換素子1~25(第二電極として透明導電膜を使用)の作製〕
(透明電極の形成)
無アルカリガラス基板上に、インジウム・スズ酸化物(ITO)透明導電膜を150nm堆積したもの(シート抵抗12Ω/square)を、通常のフォトリソグラフィ技術と湿式エッチングとを用いて10mm幅にパターニングし、第一の電極を形成した。パターン形成した第一の電極を、界面活性剤と超純水による超音波洗浄、超純水による超音波洗浄の順で洗浄後、窒素ブローで乾燥させ、最後に紫外線オゾン洗浄を行った。
次いで、正孔輸送層として、導電性高分子およびポリアニオンからなるPEDOT-PSS(CLEVIOS(登録商標) P VP AI 4083、ヘレオス株式会社製、導電率1×10-3S/cm)を2.0質量%で含むイソプロパノール溶液を調製し、乾燥膜厚が約30nmになるように、基板を65℃に調温したブレードコーターを用いて塗布乾燥した。その後、120℃の温風で20秒間加熱処理して、正孔輸送層を上記第一の電極上に製膜した。
次いで、o-ジクロロベンゼンに、p型有機半導体材料としてP3HT(BASF社製、Sepiolid P200)を1.0質量%、n型有機半導体材料であるPC61BM(フロンティアカーボン製nanom spectra E100H)を0.8質量%混合した有機光電変換材料組成物溶液を調製し、ホットプレートで80℃に加熱しながら撹拌(60分間)して完全に溶解した後、乾燥膜厚が約170nmになるように、基板を80℃に調温したブレードコーターを用いて塗布し、2分間乾燥して、光電変換層を上記正孔輸送層上に製膜した。
続いて、表1に記載の化合物および比較化合物を、それぞれ、0.02質量%になるように、n-ブタノール:ヘキサフルオロイソプロパノール=1:1(体積比率)の混合溶媒に溶解した溶液を調製した。この溶液を、乾燥膜厚が約5nmになるように、基板を65℃に調温したブレードコーターを用いて塗布乾燥した。その後、100℃の温風で2分間加熱処理して、下地層を上記光電変換層上に製膜した。
次に、上記下地層を製膜した基板を真空蒸着装置内に設置した。そして、10mm幅のシャドウマスクが透明電極と直交するように素子をセットし、10-3Pa以下にまでに真空蒸着機内を減圧した後、蒸着速度で2nm/秒で表1に記載の第二の電極材料を、それぞれ、表1に記載の膜厚で蒸着し、金属薄膜層を上記下地層上に形成した。
得られた有機光電変換素子を、大気に接触の無い状態で、日本パリレン社製PDS2010に移送し、パリレンHTからなる保護層(屈折率1.55)を20nm形成した。
さらにグローブボックス内に移送した後、2枚の3M製Ultra Barrier Solar Film UBL-9L(水蒸気透過率<5×10-4g/m2/d)の間に挟みこみ、UV硬化樹脂(ナガセケムテックス株式会社製、UV RESIN XNR5570-B1)を用いて封止を行った後、大気下に取り出し、受光部が約10×10mmサイズの有機光電変換素子1~25を作製した。
(光電変換効率の評価)
上記で作製した光電変換素子について、ソーラーシミュレーター(AM1.5Gフィルタ)の100mW/cm2の強度の光を照射し、有効面積を1cm2にしたマスクを受光部に重ね、短絡電流密度Jsc[mA/cm2]、開放電圧Voc[V]および曲線因子(フィルファクター)FFを、同素子上に形成した4箇所の受光部についてそれぞれ測定し、平均値を求めた。また、求めた短絡電流密度Jsc、開放電圧Voc、および曲線因子FFから式(1)に従って、光電変換効率η(%)を求めた。ここで、光電変換効率η(%)の数字が大きい程、エネルギー変換効率(光電変換効率)が良好であることを示す。
上記光電変換効率の評価を行った有機光電変換素子を、陽極と陰極の間に抵抗を接続したまま、有機光電変換素子を80℃に加熱し、ソーラーシミュレーター(AM1.5Gフィルタ)の100mW/cm2の強度の光で1000h曝露し続けた後、有機光電変換素子を室温に冷却し、上記光電変換効率の評価と同様の方法で、有機光電変換素子上に形成した4箇所の受光部について、それぞれ上記式(1)に従って光電変換効率η(%)を求めた。次いで、下記式(2)により変換効率の相対効率を算出して平均値を求め、これを光電変換効率の耐久性の尺度とした。
(基板の準備)
基板としての無アルカリガラスを、界面活性剤としての花王社製クリンスルーKS3030と超純水とによる超音波洗浄、超純水による超音波洗浄の順で洗浄後、窒素ブローで乾燥させ、最後に紫外線オゾン洗浄を行った。
続いて、例示化合物13を用いた下地層を塗布成膜した。この場合、7.5mgの例示化合物13を、1.0gの2,2,3,3-テトラフルオロ-1-プロパノールに溶解して得た塗布液を、スピンコーターにて1500rpm、30秒の条件で基材上に塗布し、基板表面温度120℃で5分間加熱し、化合物13から成る下地層を得た。
次に、上記下地層を製膜した基板を真空蒸着装置内に設置し、10-3Pa以下にまでに真空蒸着機内を減圧した後、蒸着速度で2nm/秒で銀(Ag)を8nmの膜厚で蒸着し、金属薄膜層を上記下地層上に形成した。
次いで、正孔輸送層として、導電性高分子およびポリアニオンからなるPEDOT-PSS(CLEVIOS(登録商標) P VP AI 4083、ヘレオス株式会社製、導電率1×10-3S/cm)を2.0質量%で含むイソプロパノール溶液を調製し、乾燥膜厚が約30nmになるように、基板を65℃に調温したブレードコーターを用いて塗布乾燥した。その後、120℃の温風で20秒間加熱処理して、正孔輸送層を上記第一の電極上に製膜した。
次いで、o-ジクロロベンゼンに、p型有機半導体材料としてP3HT(BASF社製、Sepiolid P200)を1.0質量%、n型有機半導体材料であるPC61BM(フロンティアカーボン製nanom spectra E100H)を0.8質量%混合した有機光電変換材料組成物溶液を調製し、ホットプレートで80℃に加熱しながら撹拌(60分間)して完全に溶解した後、乾燥膜厚が約170nmになるように、基板を80℃に調温したブレードコーターを用いて塗布し、2分間乾燥して、光電変換層を上記正孔輸送層上に製膜した。
続いて、例示化合物13を、それぞれ、0.02質量%になるように、n‐ブタノール:ヘキサフルオロイソプロパノール=1:1(体積比率)の混合溶媒に溶解した溶液を調製した。この溶液を、乾燥膜厚が約5nmになるように、基板を65℃に調温したブレードコーターを用いて塗布乾燥した。その後、100℃の温風で2分間加熱処理して、下地層を上記光電変換層上に製膜した。
次に、上記電子輸送層を製膜した基板を真空蒸着装置内に設置した。そして、10mm幅のシャドウマスクが透明電極と直交するように素子をセットし、10-3Pa以下にまでに真空蒸着機内を減圧した後、蒸着速度で2nm/秒で銀(Ag)を8nmの膜厚で蒸着し、第二の電極を上記下地層上に形成した。
得られた有機光電変換素子を、大気に接触の無い状態で日本パリレン社製PDS2010に移送し、パリレンHTからなる保護層(屈折率1.55)を20nm形成した。
さらにグローブボックス内に移送した後、2枚の3M製Ultra Barrier Solar Film UBL-9L(水蒸気透過率<5×10-4g/m2/d)の間に挟みこみ、UV硬化樹脂(ナガセケムテックス株式会社製、UV RESIN XNR5570-B1)を用いて封止を行った後、大気下に取り出し、受光部が約10×10mmサイズの有機光電変換素子26を作製した。
<有機光電変換素子31の作製>
上記有機光電変換素子7の作製において、金属薄膜層上の保護層として、パリレンHT(屈折率1.55)に代えて、ポリ(トリフルオロエチルアクリレート)(アルドリッチ社製、屈折率1.41)の0.2wt%トルエン溶液をスピンコートすることにより形成した20nmの膜厚のポリ(トリフルオロエチルアクリレート)からなる保護層を使用したこと以外は同様にして、有機光電変換素子31を得た。
上記有機光電変換素子7の作製において、金属薄膜層上の保護層として、パリレンHT(屈折率1.55)に代えて、パリレンCを使用して形成した20nmの膜厚のパリレンCからなる保護層を使用したこと以外は同様にして、有機光電変換素子32を得た。
上記有機光電変換素子7の作製において、金属薄膜層上の保護層として、パリレンHT(屈折率1.55)に代えて、トリス(8-キノリノラト)アルミニウム(Alq3)(アルドリッチ社製、屈折率1.73)を蒸着することにより形成した20nmの膜厚のAlq3からなる保護層を使用したこと以外は同様にして、有機光電変換素子33を得た。
上記有機光電変換素子7の作製において、金属薄膜層上の保護層として、パリレンHT(屈折率1.55)に代えて、例示化合物13(屈折率1.79)を蒸着することにより形成した20nmの膜厚の例示化合物13からなる保護層を使用したこと以外は同様にして、有機光電変換素子33を得た。
上記有機光電変換素子7の作製において、金属薄膜層上の保護層として、パリレンHT(屈折率1.55)に代えて、テトライソプロポキシチタン(東京化成製)のメタノール希釈液のスピンコート後に大気中で1時間放置した後に得た酸化チタンからなる保護層を使用したこと以外は同様にして、有機光電変換素子35を得た。
2 下地層、
3 金属薄膜層、
4 保護層、
10、20、30 有機光電変換素子、
11 陽極、
12 陰極、
14 光電変換層、
14a 第1の光電変換層、
14b 第2の光電変換層、
25 基板
26 正孔輸送層、
26a 無機材料層、
26b 有機材料層、
27 電子輸送層、
38 電荷再結合層、
38a 第2の電子輸送層、
38b 第2の正孔輸送層。
Claims (17)
- 第一の電極と、
第二の電極と、
前記第一の電極および前記第二の電極の間に存在する光電変換層と、
を有し、
前記第一の電極および第二の電極の少なくとも一方は、含窒素有機化合物を含む下地層と、周期表第11属の金属元素を含み、厚さが2~10nmである金属薄膜層と、が積層されてなる透明導電膜である、有機光電変換素子。 - 前記含窒素有機化合物は、下記一般式(1):
n1は2以上の整数を表し、
Y1はn1価の有機基または単結合(―)を表す、
で表される化合物または下記一般式(2):
Y2は2価の有機基または単結合(―)を表す、
で表される部分構造を有する高分子化合物または下記一般式(3):
A4およびA5はそれぞれ独立して2価の窒素原子含有基を表し、
n2は1以上の整数を表し、
n3およびn4はそれぞれ独立して0または1の整数を表し、
Y3は(n2+2)価の有機基を表す、
で表される部分構造を有する高分子化合物を含む、請求項1に記載の有機光電変換素子。 - 前記A1またはA3はジチオカルバメート基またはアミノ基を含む、請求項2に記載の有機光電変換素子。
- 前記A1、A2、A3、A4またはA5はピリジン環含有基を含む、請求項2または3に記載の有機光電変換素子。
- 前記含窒素有機化合物は前記一般式(1)で表され、窒素原子を5個以上含む化合物を含む、請求項2~5のいずれか1項に記載の有機光電変換素子。
- 前記金属薄膜層は銀からなる、請求項1~6のいずれか1項に記載の有機光電変換素子。
- 前記窒素化合物は重量平均分子量が3000以上である、請求項1~7のいずれか1項に記載の有機光電変換素子。
- 前記下地層は、含フッ素アルコールを含む溶媒を用いた塗布工程を含む製造方法により形成されてなる、請求項1~8のいずれか1項に記載の有機光電変換素子。
- 前記第二の電極は、前記透明導電膜である、請求項1~9のいずれか1項に記載の有機光電変換素子。
- 前記下地層の膜厚は5~30nmである、請求項1~10のいずれか1項に記載の有機光電変換素子。
- 前記透明導電膜は、前記金属薄膜層上に、屈折率が1.5~1.8である保護層をさらに有する、請求項1~11のいずれか1項に記載の有機光電変換素子。
- 請求項1~12のいずれか1項に記載の有機光電変換素子を有する、太陽電池。
- 含窒素有機化合物を含む下地層と、前記下地層上に形成され、周期表第11属の遷移金属元素を含み、厚さが2~10nmである、金属薄膜層と、を有し、前記含窒素有機化合物が下記一般式(2):
Y2は2価の有機基または単結合(―)を表す、
で表される部分構造を有する高分子化合物または下記一般式(3):
A4およびA5はそれぞれ独立して2価の窒素原子含有基を表し、
n2は1以上の整数を表し、
n3およびn4はそれぞれ独立して0または1の整数を表し、
Y3は(n2+2)価の有機基を表す、
で表される部分構造を有する高分子化合物である、透明導電膜。 - 含窒素有機化合物を含む下地層と、前記下地層上に形成され、周期表第11属の遷移金属元素を含み、厚さが10~30nmである、金属薄膜層と、を有し、前記含窒素有機化合物が下記一般式(1):
n1は2以上の整数を表し、
Y1はn1価の有機基または単結合(―)を表す、
で表され、窒素原子を5個以上含む化合物または下記一般式(2):
Y2は2価の有機基または単結合(―)を表す、
で表される部分構造を有する高分子化合物または下記一般式(3):
A4およびA5はそれぞれ独立して2価の窒素原子含有基を表し、
n2は1以上の整数を表し、
n3およびn4はそれぞれ独立して0または1の整数を表し、
Y3は(n2+2)価の有機基を表す、
で表される部分構造を有する高分子化合物である、透明導電膜。 - 含窒素有機化合物を製膜して下地層を形成する工程と、
前記下地層上に周期表第11属の遷移金属元素を含む、厚さが2~10nmまたは10~30nmの金属薄膜層を形成する工程と、
を有する、透明導電膜の製造方法。
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