JP2013014777A - ウェーハーの一時的接着用の環状オレフィン組成物 - Google Patents
ウェーハーの一時的接着用の環状オレフィン組成物 Download PDFInfo
- Publication number
- JP2013014777A JP2013014777A JP2012196932A JP2012196932A JP2013014777A JP 2013014777 A JP2013014777 A JP 2013014777A JP 2012196932 A JP2012196932 A JP 2012196932A JP 2012196932 A JP2012196932 A JP 2012196932A JP 2013014777 A JP2013014777 A JP 2013014777A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- substrate
- composition
- grams
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 101
- -1 Cyclic olefin Chemical class 0.000 title description 15
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000853 adhesive Substances 0.000 claims description 32
- 230000001070 adhesive effect Effects 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 65
- 229920001577 copolymer Polymers 0.000 abstract description 44
- 239000002904 solvent Substances 0.000 abstract description 26
- 238000012545 processing Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 29
- 239000000126 substance Substances 0.000 description 26
- 229920005989 resin Polymers 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 20
- 125000000217 alkyl group Chemical group 0.000 description 20
- XMGQYMWWDOXHJM-JTQLQIEISA-N (+)-α-limonene Chemical compound CC(=C)[C@@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-JTQLQIEISA-N 0.000 description 18
- 239000003963 antioxidant agent Substances 0.000 description 14
- 230000003078 antioxidant effect Effects 0.000 description 10
- 239000004615 ingredient Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 125000003710 aryl alkyl group Chemical group 0.000 description 9
- 125000000753 cycloalkyl group Chemical group 0.000 description 9
- 238000002411 thermogravimetry Methods 0.000 description 9
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 8
- 239000002530 phenolic antioxidant Substances 0.000 description 8
- 238000009472 formulation Methods 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- XRBCRPZXSCBRTK-UHFFFAOYSA-N phosphonous acid Chemical compound OPO XRBCRPZXSCBRTK-UHFFFAOYSA-N 0.000 description 7
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013032 Hydrocarbon resin Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- GGBJHURWWWLEQH-UHFFFAOYSA-N butylcyclohexane Chemical compound CCCCC1CCCCC1 GGBJHURWWWLEQH-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229920006270 hydrocarbon resin Polymers 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 125000001118 alkylidene group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 3
- 239000004914 cyclooctane Substances 0.000 description 3
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- FZSPYHREEHYLCB-UHFFFAOYSA-N 1-tert-butyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C(C)(C)C)=C1 FZSPYHREEHYLCB-UHFFFAOYSA-N 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Chemical group 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000003172 aldehyde group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 150000001925 cycloalkenes Chemical class 0.000 description 2
- HYPABJGVBDSCIT-UPHRSURJSA-N cyclododecene Chemical compound C1CCCCC\C=C/CCCC1 HYPABJGVBDSCIT-UPHRSURJSA-N 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical class CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000004344 phenylpropyl group Chemical group 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MVETVBHSYIYRCX-UHFFFAOYSA-I [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O MVETVBHSYIYRCX-UHFFFAOYSA-I 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229920006271 aliphatic hydrocarbon resin Polymers 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 101150059062 apln gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012933 kinetic analysis Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 150000002848 norbornenes Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003097 polyterpenes Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical compound C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- MAFQBSQRZKWGGE-UHFFFAOYSA-N trimethoxy-[2-[4-(2-trimethoxysilylethyl)phenyl]ethyl]silane Chemical compound CO[Si](OC)(OC)CCC1=CC=C(CC[Si](OC)(OC)OC)C=C1 MAFQBSQRZKWGGE-UHFFFAOYSA-N 0.000 description 1
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/08—Copolymers of ethene
- C09J123/0807—Copolymers of ethene with unsaturated hydrocarbons only containing more than three carbon atoms
- C09J123/0815—Copolymers of ethene with aliphatic 1-olefins
- C09J123/0823—Copolymers of ethene with aliphatic cyclic olefins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
- C08G2261/332—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/40—Polymerisation processes
- C08G2261/41—Organometallic coupling reactions
- C08G2261/418—Ring opening metathesis polymerisation [ROMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
【解決手段】組成物は溶媒系に分散または溶解されたシクロオレフィン共重合体を含み、かつアクティブウェーハーをキャリヤーウェーハーまたは基板に接着するために使用でき後続の処理および取扱いの間アクティブウェーハーおよびそのアクティブ部位を保護することを支援する。本組成物は化学的および熱的に耐性がありながら、これを製造工程の適当な段階で軟化または溶解しウェーハーを滑らせまたは引き剥がすことを可能にする接着層を形成する。
【選択図】図1
Description
(I)
それぞれの R1 および R2は個別に −H、およびアルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい)から成る群から選択され、さらに
それぞれの R3 は個別に −H、置換または非置換アリール基類(C6〜C18 アリール類が好ましい)、アルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい)、シクロアルキル基類(C3〜C30 シクロアルキル類が好ましく、C3〜C18 シクロアルキル類がより好ましい)、アラルキル基類(C6〜C30 アラルキル類が好ましく、ベンジル、フェネチル、およびフェニルプロピル、等のような C6〜C18 アラルキル基類がより好ましい)、エステル基類、エーテル基類、アセチル基類、アルコール類(C1〜C10 アルコール類が好ましい)、アルデヒド基類、ケトン類、ニトリル類、およびこれらの組合せ、
ならびに
(II)
----- は1重または2重結合;および
それぞれの R4は個別に −H およびアルキル基類(C1〜C20 アルキル類が好ましく、C1〜C10 アルキル類がより好ましい);から成る群から選択される。
この独創的な組成物はシクロオレフィン共重合体および全ての他の添加成分を溶媒系と共に、好ましくは室温から約150℃で、約1〜72時間の間、単に混合することで形成される。
この実施例では、シクロオレフィン共重合体および低分子量COC樹脂を含む調合物が作られた。幾つかの調合物には酸化防止剤が加えられた。
この手順では、1.2グラムのエテン−ノルボルネン共重合体(TOPASTM 5010、Tg 110℃;TOPAS Advanced Polymers 社、ケンタッキー州フロレンスから入手)を6グラムのD−リモネン(Florida Chemical 社)内に 2.8グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM、Mw 8000、Mw/Mn 2.0)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、0.75グラムのエテン−ノルボルネン共重合体(TOPASTM 8007、Tg 78℃)および 3.25グラムの低分子量 COC(TOPASTM Toner TM)を 6グラムのD−リモネン内に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順については、1.519グラムのエテン−ノルボルネン共重合体(TOPASTM 5013、Tg134℃)を 5.92グラムのD−リモネン内に 2.48グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、1.2グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)を 5.92グラムの D−リモネン内に 2.81グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順においては、2.365グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 1.635グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、開環重合により準備した 2.2グラムの水素化ノルボルネンをベースとした共重合体(ZEONORTM1060、Tg 100℃;Zeon Chemicals 社、ケンタッキー州ルイズビルから入手)および 1.8グラムの低分子量シクロオレフィン共重合体(TOPASTM Toner TM)を 5.92グラムの シクロオクタン(Aldrich、ウィスコンシン州ミルウォーキー)内に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この実施例では、種々の粘着付与剤と共にブレンドしたシクロオレフィン共重合体を含む調合物を作った。実施例1のように、幾つかの調合物には酸化防止剤が加えられた。
この手順では、0.83グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)を 5.92グラムの D−リモネン内に 3.17グラムの水素化炭化水素樹脂(REGALITETM R1125; Eastman Chemical社、テネシー州キングスポートから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ) と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順については、0.7グラムのエテン−ノルボルネン共重合体(TOPASTM 8007)および 3.3グラムのスチレン化テルペン樹脂(ZONATACTM NG98;Arizona Chemical社、フロリダ州ジャクソンビルから入手)を 5.92グラムの D−リモネン内に 0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
この手順では、1.9グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 2.1グラムの脂環式炭化水素樹脂(ARKONTM P−140; Arakawa Chemical USA 社、イリノイ州シカゴから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。
この手順においては、2.42グラムのエテン−ノルボルネン共重合体(TOPASTM 5013)を 5.92グラムの D−リモネン内に 1.58グラムの脂環式炭化水素樹脂(PLASTOLYNTM R−1140; Arakawa Chemical USA 社、イリノイ州シカゴから入手)、0.04グラムのフェノール系酸化防止剤(IRGANOXTM 1010)、および 0.04グラムの亜ホスホン酸エステル酸化防止剤(IRGAFOXTM P−EPQ)と共に溶解した。溶液を室温で添加成分が溶液になるまでかき混ぜた。溶液の固形物は約40%であった。
上の実施例1および2で準備された調合物を種々の基板ウェーハー上にスピンコートした。焼成して溶媒を気化させさらに接着組成物を再流動化した後、第2ウェーハーをそれぞれの塗布済みウェーハーに圧力をかけて接着した。接着組成物を用いた一時的なウェーハー接着の代表的な手順が図2に説明してある。接着したウェーハーについて機械的強度、熱安定性、および耐薬品性について試験した。ウェーハーは容認できる温度で手動によりこれらを脇に滑らせることにより剥離について試験した。剥離の後、溶媒すすぎおよびスピンを用いて接着組成物の残渣をきれいにした。
Claims (6)
- 接着組成物を第1基板または第2基板のどちらかに、スピンコートによって塗布することであって、層が前記組成物から形成される厚みを横切って均一な物質であること;および
接着層を介して第1および第2基板を一緒に接着させること
を含む、ウェーハーを接着する方法。 - 前記第1基板が、層が塗布される面に、微細構造地物を含むアクティブ表面を有するアクティブウェーハーである、請求項1に記載の方法。
- 前記接着組成物が、微細構造地物の内部および上に流れる、請求項2に記載の方法。
- 接着層が、アクティブ表面の微細構造の上に均一な層を形成する、請求項2に記載の方法。
- 接着層が、接着層の厚み「T」の第2基板を横切る長さが約20%未満、好ましくは約10%未満、より好ましくは約5%未満、さらにより好ましくは約2%未満、最も好ましくは約1%未満で変動するように塗布される、請求項1に記載の方法。
- 接着層がスプレーコートによって塗布される、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/263,120 US8092628B2 (en) | 2008-10-31 | 2008-10-31 | Cyclic olefin compositions for temporary wafer bonding |
US12/263,120 | 2008-10-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011534630A Division JP5836804B2 (ja) | 2008-10-31 | 2009-10-22 | ウェーハーの一時的接着用の環状オレフィン組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013014777A true JP2013014777A (ja) | 2013-01-24 |
JP5792699B2 JP5792699B2 (ja) | 2015-10-14 |
Family
ID=42129517
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011534630A Active JP5836804B2 (ja) | 2008-10-31 | 2009-10-22 | ウェーハーの一時的接着用の環状オレフィン組成物 |
JP2012196932A Active JP5792699B2 (ja) | 2008-10-31 | 2012-09-07 | ウェーハーの一時的接着用の環状オレフィン組成物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011534630A Active JP5836804B2 (ja) | 2008-10-31 | 2009-10-22 | ウェーハーの一時的接着用の環状オレフィン組成物 |
Country Status (8)
Country | Link |
---|---|
US (3) | US8092628B2 (ja) |
EP (2) | EP2362970B1 (ja) |
JP (2) | JP5836804B2 (ja) |
KR (2) | KR101705915B1 (ja) |
CN (2) | CN103021807B (ja) |
SG (1) | SG185250A1 (ja) |
TW (2) | TWI494398B (ja) |
WO (1) | WO2010051212A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107914564A (zh) * | 2017-12-08 | 2018-04-17 | 广西玉柴机器股份有限公司 | 一种单向离合器双行星排双电机集成式混合动力系统 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8092628B2 (en) | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
US8771927B2 (en) * | 2009-04-15 | 2014-07-08 | Brewer Science Inc. | Acid-etch resistant, protective coatings |
WO2010143510A1 (ja) * | 2009-06-11 | 2010-12-16 | 東京応化工業株式会社 | 接着剤組成物 |
JP5619481B2 (ja) * | 2010-06-15 | 2014-11-05 | 東京応化工業株式会社 | 接着剤組成物 |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP5681501B2 (ja) * | 2010-09-02 | 2015-03-11 | 東京応化工業株式会社 | 接着剤組成物 |
JP5681502B2 (ja) | 2010-09-30 | 2015-03-11 | 東京応化工業株式会社 | 接着剤組成物 |
FR2967058B1 (fr) * | 2010-11-05 | 2013-10-04 | Oreal | Composition cosmetique et procede de recourbement des fibres keratiniques |
JP5729097B2 (ja) * | 2011-04-07 | 2015-06-03 | Jsr株式会社 | 基材の処理方法、仮固定材および電子部品 |
WO2013006865A2 (en) | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Methods of transferring device wafers or layers between carrier substrates and other surfaces |
JP5861304B2 (ja) * | 2011-08-01 | 2016-02-16 | Jsr株式会社 | 基材の処理方法、半導体装置および仮固定用組成物 |
US8940104B2 (en) | 2011-08-02 | 2015-01-27 | Brewer Science Inc. | Cleaning composition for temporary wafer bonding materials |
JP5361092B2 (ja) * | 2011-09-16 | 2013-12-04 | リンテック株式会社 | ダイシングシート用基材フィルムおよびダイシングシート |
JP5410644B2 (ja) * | 2011-09-16 | 2014-02-05 | リンテック株式会社 | ダイシングシート用基材フィルムおよびダイシングシート |
JP5661669B2 (ja) | 2011-09-30 | 2015-01-28 | 東京応化工業株式会社 | 接着剤組成物、接着フィルムおよび基板の処理方法 |
JP5592328B2 (ja) * | 2011-09-30 | 2014-09-17 | 信越化学工業株式会社 | 仮接着材組成物及びこれを用いた薄型ウエハの製造方法 |
WO2013058054A1 (ja) * | 2011-10-20 | 2013-04-25 | 日東電工株式会社 | 熱剥離型シート |
KR20140084220A (ko) * | 2011-10-20 | 2014-07-04 | 닛토덴코 가부시키가이샤 | 열박리형 시트 |
CA2859512A1 (en) * | 2011-12-23 | 2013-06-27 | Frans Nooren Afdichtingssystemen B.V. | Composition for coating a substrate and method for coating a substrate |
JP6093187B2 (ja) * | 2012-02-08 | 2017-03-08 | 東京応化工業株式会社 | 剥離用組成物、剥離用組成物の製造方法、及びその利用 |
US9127126B2 (en) | 2012-04-30 | 2015-09-08 | Brewer Science Inc. | Development of high-viscosity bonding layer through in-situ polymer chain extension |
US9601726B2 (en) * | 2012-09-11 | 2017-03-21 | Zeon Corporation | Sealing material for secondary battery and sealing material composition for secondary battery |
US9269623B2 (en) | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
KR102077248B1 (ko) | 2013-01-25 | 2020-02-13 | 삼성전자주식회사 | 기판 가공 방법 |
US9349643B2 (en) | 2013-04-01 | 2016-05-24 | Brewer Science Inc. | Apparatus and method for thin wafer transfer |
KR101930128B1 (ko) | 2013-07-03 | 2018-12-17 | 헨켈 아이피 앤드 홀딩 게엠베하 | 고온 탈결합가능한 접착제 |
US10103048B2 (en) | 2013-08-28 | 2018-10-16 | Brewer Science, Inc. | Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates |
US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
WO2015105785A1 (en) * | 2014-01-07 | 2015-07-16 | Brewer Science Inc. | Cyclic olefin polymer compositions and polysiloxane release layers for use in temporary wafer bonding processes |
US9865490B2 (en) | 2014-01-07 | 2018-01-09 | Brewer Science Inc. | Cyclic olefin polymer compositions and polysiloxane release layers for use in temporary wafer bonding processes |
US9355881B2 (en) | 2014-02-18 | 2016-05-31 | Infineon Technologies Ag | Semiconductor device including a dielectric material |
DE102014205885B3 (de) * | 2014-03-28 | 2015-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum stoffschlüssigen Verbinden von Substraten und anschließendem Lösen der stoffschlüssigen Verbindung, Verbundsystem und dessen Verwendung |
CN107001908B (zh) | 2014-06-24 | 2020-06-09 | 汉高股份有限及两合公司 | 单组分uv和热固化高温可脱粘的胶粘剂 |
CN106687541B (zh) * | 2014-07-22 | 2019-09-24 | 布鲁尔科技公司 | 聚酰亚胺用作用于3d ic应用的激光剥离材料 |
CN104559852B (zh) | 2014-12-31 | 2018-02-27 | 深圳市化讯半导体材料有限公司 | 一种用于薄晶圆加工的临时键合胶及其制备方法 |
JP2016146429A (ja) * | 2015-02-09 | 2016-08-12 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
CN105176456A (zh) * | 2015-08-27 | 2015-12-23 | 烟台德邦科技有限公司 | 一种晶圆减薄临时粘结剂及其制备方法 |
TWI638043B (zh) * | 2017-03-22 | 2018-10-11 | 中美矽晶製品股份有限公司 | 矽晶圓洗劑與清洗矽晶圓的方法 |
US11361969B2 (en) * | 2017-07-14 | 2022-06-14 | Shin-Etsu Chemical Co., Ltd. | Device substrate with high thermal conductivity and method of manufacturing the same |
US10403598B2 (en) * | 2017-08-11 | 2019-09-03 | Micron Technology, Inc. | Methods and system for processing semiconductor device structures |
EP3806157A4 (en) * | 2018-05-31 | 2022-07-06 | Institute of Flexible Electronics Technology of Thu, Zhejiang | TRANSITION DEVICE FOR FLEXIBLE DEVICE AND METHOD FOR PREPARING IT, AND METHOD FOR MANUFACTURING FOR FLEXIBLE DEVICE |
CN109628012B (zh) * | 2018-12-19 | 2021-11-09 | 广东莱尔新材料科技股份有限公司 | 一种耐湿、耐高温、低介电常数的热熔胶膜及其制备方法 |
JP7453238B2 (ja) | 2019-01-22 | 2024-03-19 | ブルーワー サイエンス アイ エヌ シー. | 3-d ic用途用レーザー離型性接着材料 |
US11791191B2 (en) | 2020-07-08 | 2023-10-17 | Raytheon Company | Ultraviolet radiation shield layer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000265151A (ja) * | 1999-03-17 | 2000-09-26 | The Inctec Inc | 液状仮着接着剤 |
JP2001274128A (ja) * | 2000-01-21 | 2001-10-05 | Seiko Epson Corp | 薄板の研磨加工方法及び圧電振動片の製造方法 |
JP2005159155A (ja) * | 2003-11-27 | 2005-06-16 | Three M Innovative Properties Co | 半導体チップの製造方法 |
JP2005191550A (ja) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 基板の貼り付け方法 |
US20080200011A1 (en) * | 2006-10-06 | 2008-08-21 | Pillalamarri Sunil K | High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach |
JP2012507600A (ja) * | 2008-10-31 | 2012-03-29 | ブルーワー サイエンス アイ エヌ シー. | ウェーハーの一時的接着用の環状オレフィン組成物 |
Family Cites Families (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3868433A (en) | 1972-04-03 | 1975-02-25 | Exxon Research Engineering Co | Thermoplastic adhesive compositions |
US3987122A (en) | 1972-04-03 | 1976-10-19 | Exxon Research And Engineering Company | Thermoplastic adhesive compositions |
US3959062A (en) | 1972-08-10 | 1976-05-25 | E. I. Du Pont De Nemours And Company | Method of joining surfaces using segmented copolyester adhesive |
US3970494A (en) * | 1975-04-18 | 1976-07-20 | Western Electric Co., Inc. | Method for adhering one surface to another |
US4474942A (en) | 1982-06-28 | 1984-10-02 | Takeda Chemical Industries, Ltd. | Cross-linked polyesteramide from bis(2-oxazoline) |
GB8320270D0 (en) | 1983-07-27 | 1983-09-01 | Raychem Ltd | Polymer composition |
US4558114A (en) | 1985-01-23 | 1985-12-10 | Ashland Oil, Inc. | Polymers derived from polyisocyanates, bicyclic amide acetals and oxazolines |
US4710542A (en) | 1986-05-16 | 1987-12-01 | American Cyanamid Company | Alkylcarbamylmethylated amino-triazine crosslinking agents and curable compositions containing the same |
US4793337A (en) | 1986-11-17 | 1988-12-27 | E. R. Squibb & Sons, Inc. | Adhesive structure and products including same |
US5191026A (en) | 1987-12-25 | 1993-03-02 | Nippon Zeon Co., Ltd. | Ring-opening hydrogenated copolymer and process for producing the same |
DE3922546A1 (de) | 1989-07-08 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von cycloolefinpolymeren |
NL8902683A (nl) | 1989-10-31 | 1991-05-16 | Stamicarbon | Meerkomponentensysteem op basis van een oxazoline en een fosfor bevattende verbinding. |
US5043250A (en) | 1990-07-17 | 1991-08-27 | Eastman Kodak Company | Radiation-sensitive composition containing a poly (N-acyl-alkyleneimine) and use thereof in lithographic printing plates |
EP0610851B1 (de) | 1993-02-12 | 1997-05-07 | Hoechst Aktiengesellschaft | Verfahren zur Herstellung von Cycloolefincopolymeren |
EP0647676B1 (de) | 1993-10-06 | 1999-07-21 | Ticona GmbH | Modifiziertes Cycloolefincopolymer |
DE4422157A1 (de) | 1994-06-24 | 1996-01-04 | Hoechst Ag | Verfahren zur Herstellung von Cycloolefincopolymeren |
MY115462A (en) * | 1995-06-01 | 2003-06-30 | Chugoku Marine Paints | Antifouling coating composition, coating film formed from said antifouling coating composition, antifouling method using said antifouling coating composition and hull or underwater structure coated with said coating film |
US5888650A (en) | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US5773561A (en) | 1996-08-02 | 1998-06-30 | International Business Machines Corporation | Polymer sealants/adhesives and use thereof in electronic package assembly |
ATE215105T1 (de) * | 1996-11-04 | 2002-04-15 | Goodrich Co B F | Photostrukturierbare dielektrische zusammensetzungen |
US6054363A (en) * | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
KR100225956B1 (ko) | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
CN1104480C (zh) * | 1997-01-30 | 2003-04-02 | 三井化学株式会社 | 热熔粘合剂组合物 |
JP3978832B2 (ja) * | 1997-10-23 | 2007-09-19 | 日本ゼオン株式会社 | 回路基板用接着剤 |
DE69832944T2 (de) | 1997-10-29 | 2006-10-26 | Hitachi Chemical Co., Ltd. | Siloxanmodifizierte Polyamidharzzusammensetzung, Klebefilme, Klebefolie und Halbleiterbauelement |
US6110999A (en) | 1998-03-06 | 2000-08-29 | Denovus Llc | Reusable adhesive composition and method of making the same |
US6156820A (en) | 1998-12-28 | 2000-12-05 | Occidental Chemical Corporation | Polyamideimidesiloxane hot melt adhesive |
DE60037810T2 (de) * | 1999-02-05 | 2009-01-22 | Materia, Inc., Pasadena | Metathese-aktive adhäsionsagenzien und verfahren zur vergrösserung der adhäsion von polymeren an oberflächen |
US6486264B1 (en) * | 1999-05-31 | 2002-11-26 | Zeon Corporation | Process for producing hydrogenated ring-opening polymerization polymer of cycloolefin |
US6440259B1 (en) | 1999-08-04 | 2002-08-27 | 3M Innovative Properties Company | One-part storage-stable water-based contact adhesive composition with an internal coagulant |
DE19956422A1 (de) | 1999-11-24 | 2001-06-13 | Hella Kg Hueck & Co | Lösbare Klebstoffe zum Verbinden von Substraten |
JP4320882B2 (ja) * | 1999-12-10 | 2009-08-26 | 日立化成工業株式会社 | 半導体素子用接着材組成物及びこれを用いた半導体装置 |
BR0109653B1 (pt) | 2000-03-30 | 2011-08-09 | composição adesiva que compreende um componente termoplástico particulado. | |
US6590047B1 (en) * | 2000-07-28 | 2003-07-08 | Industrial Technology Research Institute | Modified copolymer of olefin and cycloolefin |
KR20030042454A (ko) | 2000-08-22 | 2003-05-28 | 제온 코포레이션 | 필름 적층 방법 |
KR100816931B1 (ko) * | 2000-10-04 | 2008-03-25 | 제이에스알 가부시끼가이샤 | 시클릭 올레핀 부가 공중합체 조성물 및 가교-결합된 물질 |
US20020127821A1 (en) | 2000-12-28 | 2002-09-12 | Kazuyuki Ohya | Process for the production of thinned wafer |
US20020115263A1 (en) | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
TW574753B (en) | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
DE10137375A1 (de) | 2001-07-31 | 2003-02-27 | Infineon Technologies Ag | Verwendung von Polybenzoxazolen (PBO) zum Kleben |
EP1295926A1 (en) * | 2001-09-19 | 2003-03-26 | ExxonMobil Chemical Patents Inc. | Components for adhesive compositions and process for manufacture |
DE10213227A1 (de) | 2002-03-25 | 2003-10-16 | Bayer Ag | Zusammensetzung |
US7186448B2 (en) | 2002-05-13 | 2007-03-06 | Jsr Corporation | Composition and method for temporarily fixing solid |
US6828020B2 (en) | 2002-08-14 | 2004-12-07 | Adco Products, Inc. | Self-adhesive vibration damping tape and composition |
US7608336B2 (en) | 2002-11-28 | 2009-10-27 | Nippon Kayaku Kabushiki Kaisha | Flame-retardant epoxy resin composition and cured product obtained therefrom |
US6869894B2 (en) | 2002-12-20 | 2005-03-22 | General Chemical Corporation | Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing |
JP4171898B2 (ja) | 2003-04-25 | 2008-10-29 | 信越化学工業株式会社 | ダイシング・ダイボンド用接着テープ |
ITMI20030969A1 (it) * | 2003-05-15 | 2004-11-16 | Enitecnologie Spa | Procedimento per la produzione in continuo di idrocarburi da gas di sintesi in reattori a sospensione e per la separazione della fase liquida prodotta dalla fase solida. |
DE10334576B4 (de) | 2003-07-28 | 2007-04-05 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit einem Kunststoffgehäuse |
US7011924B2 (en) | 2003-07-30 | 2006-03-14 | Hynix Semiconductor Inc. | Photoresist polymers and photoresist compositions comprising the same |
US7270937B2 (en) | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
US7084201B2 (en) * | 2003-11-14 | 2006-08-01 | Wall-Guard Corporation Of Ohio | Non-flammable waterproofing composition |
US7288316B2 (en) | 2003-11-21 | 2007-10-30 | Topas Advanced Polymers, Inc. | Cycloolefin copolymer heat sealable films |
WO2005052085A1 (ja) | 2003-11-27 | 2005-06-09 | Jsr Corporation | ホットメルト型接着剤組成物 |
JP2006135272A (ja) | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
US7316844B2 (en) | 2004-01-16 | 2008-01-08 | Brewer Science Inc. | Spin-on protective coatings for wet-etch processing of microelectronic substrates |
KR100696287B1 (ko) | 2004-01-28 | 2007-03-19 | 미쓰이 가가쿠 가부시키가이샤 | 반도체 웨이퍼의 보호방법 |
DE102004007060B3 (de) | 2004-02-13 | 2005-07-07 | Thallner, Erich, Dipl.-Ing. | Vorrichtung und Verfahren zum Verbinden von Wafern |
FR2866983B1 (fr) | 2004-03-01 | 2006-05-26 | Soitec Silicon On Insulator | Realisation d'une entite en materiau semiconducteur sur substrat |
US7208334B2 (en) | 2004-03-31 | 2007-04-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device, acid etching resistance material and copolymer |
KR101165487B1 (ko) | 2004-10-29 | 2012-07-13 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 시클릭 올레핀 공중합체를 혼입한 광학 필름 |
US7595369B2 (en) | 2004-11-10 | 2009-09-29 | Lg Chem, Ltd. | Method of polymerizing cyclic olefins and vinyl olefins, copolymer produced by the method and optical anisotropic film comprising the same |
US20060141241A1 (en) | 2004-12-23 | 2006-06-29 | Carespodi Dennis L | Peelable breakaway multi-layered structures and methods and compositions for making such structures |
JP2006193666A (ja) * | 2005-01-14 | 2006-07-27 | Sumitomo Bakelite Co Ltd | 半導体用接着フィルム、半導体用接着フィルム付きキャリア材料および半導体装置 |
US7799883B2 (en) | 2005-02-22 | 2010-09-21 | Promerus Llc | Norbornene-type polymers, compositions thereof and lithographic process using such compositions |
US20080075901A1 (en) | 2005-02-23 | 2008-03-27 | Lee S Thomas | Multilayer Films Including Cycloolefin Copolymer and Styrene-Butadiene Copolymer |
EP1854136A1 (en) | 2005-03-01 | 2007-11-14 | Dow Corning Corporation | Temporary wafer bonding method for semiconductor processing |
DE602006014420D1 (de) | 2005-09-09 | 2010-07-01 | Avery Dennison Corp | Hitzeschrumpfbarer film mit härtbarem klebstoff auf methacrylatharzbasis |
WO2007032537A1 (en) | 2005-09-13 | 2007-03-22 | Fujifilm Corporation | Method of producing cyclic polyolefin film, cyclic polyolefin film produced by the production method, method of preparing liquid dispersion of fine particles, liquid dispersion of fine particles and method of preparing dope |
US7655289B2 (en) | 2005-12-12 | 2010-02-02 | Eastman Kodak Company | Optical film composite having spatially controlled adhesive strength |
US8268449B2 (en) | 2006-02-06 | 2012-09-18 | Brewer Science Inc. | Thermal- and chemical-resistant acid protection coating material and spin-on thermoplastic adhesive |
US8120168B2 (en) | 2006-03-21 | 2012-02-21 | Promerus Llc | Methods and materials useful for chip stacking, chip and wafer bonding |
WO2007109326A2 (en) | 2006-03-21 | 2007-09-27 | Promerus Llc | Methods and materials useful for chip stacking, chip and wafer bonding |
US7713835B2 (en) | 2006-10-06 | 2010-05-11 | Brewer Science Inc. | Thermally decomposable spin-on bonding compositions for temporary wafer bonding |
US7482412B2 (en) | 2006-10-10 | 2009-01-27 | Jsr Corporation | Process for manufacturing cycloolefin addition polymer |
CN101779268B (zh) | 2007-06-25 | 2013-11-06 | 布鲁尔科技公司 | 高温旋涂暂时性粘合组合物 |
RU2010129076A (ru) * | 2008-01-24 | 2012-01-20 | Брюэр Сайенс Инк. (Us) | Способ обратимого крепления полупроводниковой пластины со сформированными устройствами к несущей подложке |
-
2008
- 2008-10-31 US US12/263,120 patent/US8092628B2/en active Active
-
2009
- 2009-10-22 CN CN201210396750.6A patent/CN103021807B/zh active Active
- 2009-10-22 EP EP09824030.2A patent/EP2362970B1/en active Active
- 2009-10-22 EP EP13159034.1A patent/EP2623573B9/en active Active
- 2009-10-22 KR KR1020117012500A patent/KR101705915B1/ko active IP Right Grant
- 2009-10-22 SG SG2012069340A patent/SG185250A1/en unknown
- 2009-10-22 JP JP2011534630A patent/JP5836804B2/ja active Active
- 2009-10-22 KR KR1020127023360A patent/KR101717807B1/ko active IP Right Grant
- 2009-10-22 WO PCT/US2009/061633 patent/WO2010051212A2/en active Application Filing
- 2009-10-22 CN CN200980142330.1A patent/CN102203917B/zh active Active
- 2009-10-27 TW TW102131596A patent/TWI494398B/zh active
- 2009-10-27 TW TW098136275A patent/TWI437062B/zh active
-
2010
- 2010-12-15 US US12/969,367 patent/US8221571B2/en active Active
-
2012
- 2012-07-13 US US13/548,674 patent/US8771442B2/en active Active
- 2012-09-07 JP JP2012196932A patent/JP5792699B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000265151A (ja) * | 1999-03-17 | 2000-09-26 | The Inctec Inc | 液状仮着接着剤 |
JP2001274128A (ja) * | 2000-01-21 | 2001-10-05 | Seiko Epson Corp | 薄板の研磨加工方法及び圧電振動片の製造方法 |
JP2005159155A (ja) * | 2003-11-27 | 2005-06-16 | Three M Innovative Properties Co | 半導体チップの製造方法 |
JP2005191550A (ja) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 基板の貼り付け方法 |
US20080200011A1 (en) * | 2006-10-06 | 2008-08-21 | Pillalamarri Sunil K | High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach |
JP2012507600A (ja) * | 2008-10-31 | 2012-03-29 | ブルーワー サイエンス アイ エヌ シー. | ウェーハーの一時的接着用の環状オレフィン組成物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107914564A (zh) * | 2017-12-08 | 2018-04-17 | 广西玉柴机器股份有限公司 | 一种单向离合器双行星排双电机集成式混合动力系统 |
Also Published As
Publication number | Publication date |
---|---|
US20120291938A1 (en) | 2012-11-22 |
US8221571B2 (en) | 2012-07-17 |
EP2623573A2 (en) | 2013-08-07 |
US20100112305A1 (en) | 2010-05-06 |
TWI437062B (zh) | 2014-05-11 |
EP2362970B1 (en) | 2019-04-10 |
KR101705915B1 (ko) | 2017-02-10 |
TW201022388A (en) | 2010-06-16 |
EP2362970A2 (en) | 2011-09-07 |
KR20110089861A (ko) | 2011-08-09 |
EP2623573A3 (en) | 2014-01-15 |
TW201350552A (zh) | 2013-12-16 |
EP2362970A4 (en) | 2013-05-29 |
TWI494398B (zh) | 2015-08-01 |
JP5836804B2 (ja) | 2015-12-24 |
EP2623573B1 (en) | 2020-03-25 |
KR101717807B1 (ko) | 2017-03-17 |
US8771442B2 (en) | 2014-07-08 |
WO2010051212A3 (en) | 2010-07-08 |
JP2012507600A (ja) | 2012-03-29 |
CN102203917B (zh) | 2015-09-02 |
CN103021807A (zh) | 2013-04-03 |
EP2623573B9 (en) | 2020-07-29 |
US8092628B2 (en) | 2012-01-10 |
SG185250A1 (en) | 2012-11-29 |
JP5792699B2 (ja) | 2015-10-14 |
CN103021807B (zh) | 2016-05-04 |
CN102203917A (zh) | 2011-09-28 |
KR20120115579A (ko) | 2012-10-18 |
US20110086955A1 (en) | 2011-04-14 |
WO2010051212A2 (en) | 2010-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5792699B2 (ja) | ウェーハーの一時的接着用の環状オレフィン組成物 | |
JP5656405B2 (ja) | スライディング手法を用いるウェーハの仮接合のための、高温およびスピンオン接合用組成物 | |
TWI418602B (zh) | 高溫旋塗暫時結合組成物 | |
JP6446290B2 (ja) | 接着剤組成物、積層体及び剥離方法 | |
KR101581484B1 (ko) | 박리 방법 및 박리액 | |
JP5189124B2 (ja) | ダイシング用固定シート及びダイシング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130527 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20140224 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20140225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140910 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150209 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150528 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150609 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150713 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5792699 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |