TWI437062B - 用於暫時性晶圓結合之環烯烴組成物 - Google Patents
用於暫時性晶圓結合之環烯烴組成物 Download PDFInfo
- Publication number
- TWI437062B TWI437062B TW098136275A TW98136275A TWI437062B TW I437062 B TWI437062 B TW I437062B TW 098136275 A TW098136275 A TW 098136275A TW 98136275 A TW98136275 A TW 98136275A TW I437062 B TWI437062 B TW I437062B
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- Prior art keywords
- composition
- substrate
- group
- cyclic olefin
- bonding
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 135
- -1 Cyclic olefin Chemical class 0.000 title claims description 34
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 100
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 56
- 239000004713 Cyclic olefin copolymer Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 44
- 239000002904 solvent Substances 0.000 claims description 33
- 125000000217 alkyl group Chemical group 0.000 claims description 23
- 239000003963 antioxidant agent Substances 0.000 claims description 21
- 229920001577 copolymer Polymers 0.000 claims description 18
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 15
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 15
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 230000003078 antioxidant effect Effects 0.000 claims description 14
- 239000004615 ingredient Substances 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 11
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 8
- GGBJHURWWWLEQH-UHFFFAOYSA-N butylcyclohexane Chemical compound CCCCC1CCCCC1 GGBJHURWWWLEQH-UHFFFAOYSA-N 0.000 claims description 8
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 claims description 8
- 150000002576 ketones Chemical class 0.000 claims description 8
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims description 8
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 8
- 150000002825 nitriles Chemical class 0.000 claims description 8
- 239000002530 phenolic antioxidant Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims description 5
- 239000004914 cyclooctane Substances 0.000 claims description 5
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- HYPABJGVBDSCIT-UPHRSURJSA-N cyclododecene Chemical compound C1CCCCC\C=C/CCCC1 HYPABJGVBDSCIT-UPHRSURJSA-N 0.000 claims description 4
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical compound C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 claims description 4
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 4
- AFFLGGQVNFXPEV-UHFFFAOYSA-N n-decene Natural products CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- FZSPYHREEHYLCB-UHFFFAOYSA-N 1-tert-butyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C(C)(C)C)=C1 FZSPYHREEHYLCB-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000004014 plasticizer Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000002318 adhesion promoter Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000003431 cross linking reagent Substances 0.000 claims description 2
- RVEASLJBVZGRIP-UHFFFAOYSA-K dinitrosooxybismuthanyl nitrite Chemical compound [Bi+3].[O-]N=O.[O-]N=O.[O-]N=O RVEASLJBVZGRIP-UHFFFAOYSA-K 0.000 claims description 2
- 239000002241 glass-ceramic Substances 0.000 claims description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 150000001299 aldehydes Chemical class 0.000 claims 6
- GINMJHHVPMUMGK-UHFFFAOYSA-N 1-butyl-3,5-dimethylbenzene Chemical compound CCCCC1=CC(C)=CC(C)=C1 GINMJHHVPMUMGK-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 70
- 239000000243 solution Substances 0.000 description 29
- 239000000126 substance Substances 0.000 description 28
- 229920005989 resin Polymers 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 20
- 238000012545 processing Methods 0.000 description 17
- 239000007787 solid Substances 0.000 description 10
- 238000009472 formulation Methods 0.000 description 8
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 7
- 238000002411 thermogravimetry Methods 0.000 description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 5
- 239000013032 Hydrocarbon resin Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229920006270 hydrocarbon resin Polymers 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 150000001925 cycloalkenes Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 125000004185 ester group Chemical group 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- LOLANUHFGPZTLQ-UHFFFAOYSA-N 1-ethoxydecane Chemical compound CCCCCCCCCCOCC LOLANUHFGPZTLQ-UHFFFAOYSA-N 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 125000003172 aldehyde group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 150000005690 diesters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 125000004344 phenylpropyl group Chemical group 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- FGHOOJSIEHYJFQ-UHFFFAOYSA-N (2,4-ditert-butylphenyl) dihydrogen phosphite Chemical compound CC(C)(C)C1=CC=C(OP(O)O)C(C(C)(C)C)=C1 FGHOOJSIEHYJFQ-UHFFFAOYSA-N 0.000 description 1
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 description 1
- LNOLJFCCYQZFBQ-BUHFOSPRSA-N (ne)-n-[(4-nitrophenyl)-phenylmethylidene]hydroxylamine Chemical class C=1C=C([N+]([O-])=O)C=CC=1C(=N/O)/C1=CC=CC=C1 LNOLJFCCYQZFBQ-BUHFOSPRSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- JPEWDCTZJFUITH-UHFFFAOYSA-N 1-methoxydecane Chemical compound CCCCCCCCCCOC JPEWDCTZJFUITH-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- WPMYUUITDBHVQZ-UHFFFAOYSA-N 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoic acid Chemical compound CC(C)(C)C1=CC(CCC(O)=O)=CC(C(C)(C)C)=C1O WPMYUUITDBHVQZ-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- YGIOTTPLRCUUSI-UHFFFAOYSA-N COC(CCCCCCCCCC(C)C1=C(C=CC=C1)C(C)CCCCCCCCCC(OC)(OC)OC)(OC)OC Chemical compound COC(CCCCCCCCCC(C)C1=C(C=CC=C1)C(C)CCCCCCCCCC(OC)(OC)OC)(OC)OC YGIOTTPLRCUUSI-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- OVNYHPBMUWIQJF-UHFFFAOYSA-N OCC(CO)(CO)CO.[Ba] Chemical compound OCC(CO)(CO)CO.[Ba] OVNYHPBMUWIQJF-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229920006271 aliphatic hydrocarbon resin Polymers 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 101150059062 apln gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- WHRIKZCFRVTHJH-UHFFFAOYSA-N ethylhydrazine Chemical compound CCNN WHRIKZCFRVTHJH-UHFFFAOYSA-N 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 125000006125 ethylsulfonyl group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002848 norbornenes Chemical class 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- XRBCRPZXSCBRTK-UHFFFAOYSA-N phosphonous acid Chemical compound OPO XRBCRPZXSCBRTK-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003097 polyterpenes Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical compound C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/08—Copolymers of ethene
- C09J123/0807—Copolymers of ethene with unsaturated hydrocarbons only containing more than three carbon atoms
- C09J123/0815—Copolymers of ethene with aliphatic 1-olefins
- C09J123/0823—Copolymers of ethene with aliphatic cyclic olefins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
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Description
本發明係在政府支持下根據空軍研究實驗室(Air Force Research Laboratory;AFRL)所簽訂之合同第FA8650-05-D-5807號進行。美國政府享有本發明之某些權利。
本發明廣義而言係關於一種新穎組成物及使用該等組成物形成鍵結組成物之方法,該等鍵結組成物可在晶圓薄化及其他加工期間使作用晶圓支承於載體晶圓或基板上。
已使用晶圓(基板)薄化散逸熱量及輔助積體電路(IC)之電操作。厚基板引起電容增加,從而需要較粗的傳輸線,且繼而需要較大的IC佔據面積(footprint)。基板薄化使阻抗增加,而電容使阻抗降低,從而引起傳輸線粗度減小,且繼而IC尺寸減小。因此,基板薄化有助於IC小型化。
幾何限制為基板薄化之另一刺激因素。通路孔係蝕刻於基板之背面以有助於前面接觸。為了使用常見乾式蝕刻技術構造通路,幾何限制便適用。對於小於100μm之基板厚度,使用在可接受時間內產生極少蝕刻後殘餘物之乾式蝕刻法構造直徑為30-70μm的通路。對於厚基板,需要直徑較大的通路。此需要較長乾式蝕刻時間,且產生較大量的蝕刻後殘餘物,因而顯著降低產量。較大通路亦需要較大量之金屬化,成本更高。因此,對背面加工而言,可更
快速且以更低成本地加工薄基板。
薄基板亦更易於切割且劃割成IC。較薄基板之待穿透及切割之材料量較小,且因此所需的工作量較少。無論使用何種方法(鋸切、劃割與裂片(scribe and break)或雷射剝蝕),均更易於自較薄基板切割IC。大部分半導體晶圓在前面(frontside)操作之後經薄化。出於處理簡易性,在正常全尺寸厚度(例如600-700μm)下加工晶圓(亦即前面裝置)。完成之後,即將其薄化至100-150μm之厚度。在某些情況下(例如當諸如砷化鎵(GaAs)之混合基板用於高功率裝置時),厚度可減小至25μm。
機械基板薄化係藉由使晶圓表面與含有液體漿料之硬且平的旋轉水平大淺盤接觸來進行。漿料可含有研磨介質及化學蝕刻劑(諸如氨、氟化物或其組合)。研磨劑提供「粗略(gross)」基板移除,亦即薄化,而蝕刻化學劑有助於在次微米水平下「拋光」。在移除一定量的基板而達到目標厚度之前,維持晶圓與介質接觸。
對於厚度為300μm或300μm以上之晶圓,用利用真空吸盤或某些機械連接構件之工具固持晶圓於適當位置。當晶圓厚度減小至300μm以下時,將很難或不可能在進一步薄化及加工期間維持對晶圓連接及處理之控制。在一些情況下,可使機械裝置連接且固持在薄化晶圓上,然而,可能遇到許多問題,尤其當加工可能變化時。出於此原因,安裝晶圓(「作用」晶圓)於獨立的剛性(載體)基板或晶圓上。此基板成為用於進一步薄化及薄化後加工之固持平
台。載體基板由諸如藍寶石、石英、某些玻璃及矽之材料構成,且通常展現1000μm之厚度。基板之選擇將視各材料之間熱膨脹係數(CTE)之匹配緊密程度而定。然而,大部分當前可用之黏著方法不具有足以耐受在背面加工步驟(諸如金屬化或介電沈積及退火)中所遇到之高溫的熱穩定性或機械穩定性。許多現行方法亦具有不良平面性(其造成整個晶圓尺寸之總厚度變化過大)及不良耐化學性。
用於將作用晶圓安裝於載體基板的一種方法為經由熱釋放黏著帶。此方法具有兩個主要缺點。第一,黏著帶在整個作用晶圓/載體基板界面上具有有限的厚度均勻性,且此有限的均勻性往往不足以進行超薄晶圓處理。第二,熱釋放黏著劑在較低溫度下軟化,以致鍵結之晶圓/載體基板堆疊無法耐受許多在較高溫度下進行之典型晶圓加工步驟。
另一方面,熱穩定黏著劑往往需要過高鍵結壓力或鍵結溫度來實現充分熔融流動,從而形成良好鍵結。同樣,可能需要過多機械力來分離作用晶圓與載體晶圓,因為在實際脫鍵結溫度下黏著劑之黏度仍過高。要想在不餘留殘餘物的情況下移除熱穩定黏著劑亦可能很難。
需要黏著作用晶圓於載體基板之新組成物及方法,其可承受高加工溫度且允許晶圓與基板在方法之適當階段容易地分離。
本發明廣泛地藉由提供一種晶圓結合方法解決先前技
術之問題,該方法包括提供包含經由鍵結層鍵結在一起之第一基板及第二基板的堆疊,及分離該第一基板與該第二基板。鍵結層由包含溶解或分散於溶劑系統中之環烯烴共聚物(COC)的組成物形成。
本發明亦提供一種包含第一基板及第二基板以及鍵結層的物件。第一基板包含背表面及作用表面,該作用表面包含至少一個作用部位及複數個形貌特徵。第二基板具有鍵結表面。鍵結層與第一基板之作用表面及第二基板之鍵結表面鍵結。鍵結層由包含溶解或分散於溶劑系統中之環烯烴共聚物的組成物形成。
在另一具體實例中,本發明係關於一種適用於將兩個基板鍵結在一起之組成物。本發明組成物包含溶解或分散於溶劑系統中之環烯烴共聚物及成分。該成分係選自由增黏劑樹脂、低分子量環烯烴共聚物及其混合物組成之群。
更詳細言之,本發明組成物包含分散或溶解於溶劑系統中之環烯烴共聚物(COC)。以組成物之總重量視作100重量%計,該共聚物於組成物中之存在量較佳為約5重量%至約85重量%,更佳約5重量%至約60重量%,且最佳約10重量%至約40重量%。
較佳的共聚物為熱塑性的,且較佳具有約2,000道爾頓至約200,000道爾頓且更佳為約5,000道爾頓至約100,000道爾頓之重量平均分子量(Mw)。較佳的共聚物較佳具有至少約100℃、更佳為至少約140℃且更佳約160℃至約220℃
之軟化溫度(熔融黏度為3,000Pa.S)。適合之共聚物較佳亦具有至少約60℃、更佳約60℃至約200℃且最佳約75℃至約160℃之玻璃轉移溫度(Tg)。
較佳的環烯烴共聚物包含重複環烯烴及非環烯烴單體,或以環烯烴為基礎之開環聚合物。適用於本發明之環烯烴係選自由基於降冰片烯之烯烴、基於四環十二烯之烯烴、基於二環戊二烯之烯烴及其衍生物組成之群。衍生物包括經以下取代之衍生物:烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)、亞烷基(較佳為C1-C20亞烷基,更佳為C1-C10亞烷基)、芳烷基(較佳為C6-C30芳烷基,更佳為C6-C18芳烷基)、環烷基(較佳為C3-C30環烷基,更佳為C3-C18環烷基)、醚、乙醯基、芳族、酯、羥基、烷氧基、氰基、醯胺、醯亞胺及矽烷基。用於本發明中之尤佳環烯烴包括選自由以下組成之群的環烯烴:
及前述各物之組合,其中各R1及R2個別地選自由-H及烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)組成之群;且各R3個別地選自由以下組成之群:-H、經取代及未經取代之芳基(較佳為C6-C18芳基)、烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)、環烷基(較佳為C3-C30環烷基,更佳為C3-C18環烷基)、芳烷基(較佳為C6-C30芳烷基,更佳為C6-C18芳烷基,諸如苯甲基、苯乙基及苯丙基等)、酯基、醚基、乙醯基、醇(較佳為C1-C10醇)、醛基、酮、腈及其組合。
較佳的非環烯烴係選自由分支及未分支C2-C20烯烴(較佳為C2-C10烯烴)組成之群。適用於本發明中之非環烯烴更佳具有如下結構:
其中各R4個別地選自由-H及烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)組成之群。用於本發明之尤佳非環烯烴包括選自由乙烯、丙烯及丁烯組成之群的非環烯烴,其中以乙烯最佳。
在本技術領域中,製造環烯烴共聚物之方法為已知。舉例而言,環烯烴共聚物可藉由使環狀單體與非環狀單體(諸如降冰片烯與乙烯,如下所示)鏈聚合來製造。
亦可藉由開環複分解聚合各種環狀單體,接著氫化來製造環烯烴共聚物,如下所說明。
因此,本發明之共聚物較佳包含以下重複單體:(I):
及前述各物之組合,其中:各R1及R2個別地選自由-H及烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)組成之群;且各R3個別地選自由以下組成之群:-H、經取代及未經取代之芳基(較佳為C6-C18芳基)、烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)、環烷基(較佳為C3-C30環烷基,更佳為C3-C18環烷基)、芳烷基(較佳為C6-C30芳烷基,更佳為C6-C18芳烷基,諸如苯甲基、苯乙基及苯丙基等)、酯基、醚基、乙醯基、醇(較佳為C1-C10醇)、醛基、酮、腈及其組合;及(II):
其中:-----為單鍵或雙鍵;且各R4係個別地選自由-H及烷基(較佳為C1-C20烷基,更佳為C1-C10烷基)組成之群。
聚合物中之單體(I)與單體(II)之比率較佳為約5:95至約95:5,且更佳為約30:70至約70:30。
藉由較佳在室溫至約150℃下簡單混合環烯烴共聚物及任何其他成分與溶劑系統約1-72小時來形成本發明組成物。
以組成物之總重量視作100重量%計,組成物應包含至少約15重量%溶劑系統,較佳約30重量%至約95重量%溶劑系統,更佳約40重量%至約90重量%溶劑系統,且更佳約60重量%至約90重量%溶劑系統。溶劑系統應具有約50-280℃,且較佳約120-250℃之沸點。適合之溶劑包括(但不限於)甲基乙基酮(MEK)及環戊酮,以及選自由薴、1,3,5-三甲苯、雙戊烯、蒎烯、聯環己烷(bicyclohexyl)、環十二烯、1-第三丁基-3,5-二甲基苯、丁基環己烷、環辛烷、環庚烷、環己烷、甲基環己烷及其混合物組成之群的烴溶劑。
以組成物之總重量視作100重量%計,組成物中之總固體含量應為至少約5重量%,較佳為約5重量%至約85重量%,更佳為約5重量%至約60重量%,且更佳為約10重量%至約40重量%。
根據本發明,組成物可包括其他成分,包括低分子量環烯烴共聚物(COC)樹脂及/或增黏劑樹脂或松香。組成物亦可包括許多選自由增塑劑、抗氧化劑及其混合物組成之群的可選成分。
當組成物中使用低分子量COC樹脂時,以組成物之總
重量視作100重量%計,其於組成物中之存在量較佳為約2重量%至約80重量%,更佳為約5重量%至約50重量%,且更佳為約15重量%至約35重量%。術語「低分子量環烯烴共聚物(low molecular weight cycloolefin copolymer)」欲指重量平均分子量(Mw)小於約50,000道爾頓、較佳小於約20,000道爾頓且更佳為約500道爾頓至約10,000道爾頓的COC。該等共聚物較佳亦具有約50℃至約120℃、更佳約60℃至約90℃且最佳約60℃至約70℃之Tg。用於本發明組成物之例示性低分子量COC樹脂為以名稱TOPAS® Toner TM(Mw 8,000)出售且可自Topas Advanced Polymers獲得之COC樹脂。
當使用增黏劑或松香時,以組成物之總重量視作100重量%計,其於組成物中之存在量較佳為約2重量%至約80重量%,更佳為約5重量%至約50重量%,且更佳為約15重量%至約35重量%。增黏劑係選自具有與環烯烴共聚物相容之化學性質以致在組成物中不發生相分離的增黏劑。適合之增黏劑之實例包括(但不限於)多萜樹脂(以名稱SYLVARESTM TR樹脂出售;Arizona Chemical)、β-多萜樹脂(以名稱SYLVARESTM TR-B樹脂出售;Arizona Chemical)、苯乙烯化萜樹脂(以名稱ZONATAC NG樹脂出售;Arizona Chemical)、聚合松香樹脂(以名稱SYLVAROS® PR樹脂出售;Arizona Chemical)、松香酯樹脂(以名稱EASTOTACTM樹脂出售;Eastman Chemical)、環脂族烴樹脂(以名稱PLASTOLYNTM樹脂出售,Eastman Chemical;或以
名稱ARKONTM樹脂出售;Arakawa Chemical)、C5脂族烴樹脂(以名稱PICCOTACTM樹脂出售;Eastman Chemical)、氫化烴樹脂(以名稱REGALITETM樹脂出售;Eastman Chemical),及其混合物。
當使用抗氧化劑時,以組成物之總重量視作100重量%計,其於組成物中之存在量較佳為約0.1重量%至約2重量%,且更佳約0.5重量%至約1.5重量%。適合之抗氧化劑之實例包括選自由以下組成之群的抗氧化劑:酚系抗氧化劑(諸如季戊四醇肆(3-(3,5-二第三丁基-4-羥基苯基)丙酸酯,由Ciba以名稱IRGANOX® 1010出售)、亞磷酸酯(phosphite)抗氧化劑(諸如參(2,4-二第三丁基苯基)亞磷酸酯,由Ciba以名稱IRGAFOS® 168出售)、亞膦酸酯(phosphonite)抗氧化劑(諸如肆(2,4-二第三丁基苯基)[1,1-聯苯]-4,4'-二基雙亞膦酸二酯,由Ciba以名稱IRGAFOX® P-EPQ出售),及其混合物。
在替代性具體實例中,組成物較佳基本上不含(小於約0.1重量%,且較佳為約0重量%)黏著促進劑,諸如雙(三甲氧基矽烷基乙基)苯、胺基丙基三(烷氧基矽烷)(例如,胺基丙基三(甲氧基矽烷)、胺基丙基三(乙氧基矽烷)、苯基胺基丙基三(乙氧基矽烷)),及其他矽烷偶合劑,或其混合物。在一些具體實例中,最終組成物亦為熱塑性的(亦即,不可交聯)。因而,在此等替代性具體實例中,組成物將基本上不含(小於約0.1重量%,且較佳為約0重量%)交聯劑,諸如POWDERLINK®(Cytec)及EPI-CURETM 3200
(Hexion Specialty Chemicals)。
根據一個態樣,最終組成物之熔融黏度(複合黏度係數)較佳將小於約100Pa.S,更佳小於約50Pa.S,且更佳為約1Pa.S至約35Pa.S。出於此等量測之目的,經由流變動態分析(TA Instruments,AR-2000,雙平行板組態,其中板具有25mm之直徑)測定熔融黏度。此外,熔融黏度較佳係在所論述之組成物的較佳脫鍵結溫度下測定。如本文中所使用,術語組成物之「較佳脫鍵結溫度」定義為組成物之熔融黏度低於100Pa.S之溫度,且藉由在1Hz振盪頻率下在溫度斜坡(temperature ramp)中動態量測來測定。當在組成物之較佳脫鍵結溫度下量測時,組成物較佳亦具有小於約100Pa、較佳小於約50Pa,且更佳為約1Pa至約26Pa之儲存模數(storage modulus)(G')。儲存模數係藉由在1Hz振盪頻率下在溫度斜坡中動態量測來測定。
組成物在高達約350℃下具熱穩定性。視該組成物而定,在較佳脫鍵結溫度加50℃下(較佳在約200℃至約300℃之溫度下)維持1小時之後,組成物之損失小於約5重量%亦較佳,且小於約1.5重量%更佳。換言之,如由本文所描述之熱重量分析(TGA)所測定,在此溫度下,組成物發生極少熱分解或不發生熱分解。
雖然組成物可首先塗覆於載體基板或作用晶圓,但較佳首先塗覆於作用晶圓。可塗佈此等組成物以獲得凸起晶圓塗覆(bump wafer application)所需之無孔隙厚膜且在整個晶圓上實現所需均勻性。較佳的塗覆方法包括旋塗組成
物,旋轉速度為約500-5000rpm(更佳為約1000-3500rpm),以每秒約3000-10,000rpm加速,且旋轉時間為約30-180秒。應瞭解,可改變塗覆步驟來實現特定厚度。
塗佈之後,可烘焙基板(例如在加熱板上)以蒸發溶劑。典型烘焙係在約70-250℃,且較佳為約80-240℃的溫度,歷時約1-60分鐘,且更佳約2-10分鐘。烘焙之後的膜厚度(形貌的上方)典型地將為至少約1μm,且更佳為約10-200μm。
烘焙之後,使所要之載體晶圓與本發明組成物層接觸,且抵靠該層擠壓。藉由在約100-300℃且較佳約120-180℃之溫度下加熱使載體晶圓與本發明組成物鍵結。此加熱較佳在真空下、在約0.1千牛頓至約25千牛頓之鍵結力下進行且歷經約1-10分鐘。可使鍵結晶圓經受晶圓薄化中所包括之背研(backgrinding)、金屬化、圖案化、鈍化、通路形成及/或其他加工步驟,如以下更詳細地描述。
圖1(a)說明例示性堆疊10,其包含作用晶圓12及載體晶圓或基板14。應瞭解,堆疊10未按比例顯示,且出於此說明之目的已將其放大。作用晶圓12具有作用表面18。如圖1(a)中所示,作用表面18可包含各種形貌特徵20a-20d。典型的作用晶圓12可包括任何微電子基板。一些可能的作用晶圓12之實例包括選自由以下組成之群之晶圓:微機電系統(MEMS)裝置、顯示裝置、撓性基板(例如固化環氧樹脂基板、可用於形成圖的捲起基板)、化合物半導體、低k介電層、介電層(例如氧化矽、氮化矽)、離子植入層,
及包含矽、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、亞硝酸鉭、SiGe及前述各物之混合物的基板。
載體基板14具有鍵結表面22。典型的載體基板14包含選自由以下組成之群的材料:藍寶石、陶瓷、玻璃、石英、鋁、銀、矽、玻璃-陶瓷複合物(諸如可名稱Zerodur®自Schott AG獲得之產品)及其組合。
晶圓12及載體基板14經由鍵結組成物層24鍵結在一起。鍵結層24由以上所描述之環烯烴共聚物組成物形成,且亦如以上所描述塗覆及乾燥。如圖1(a)中所示,鍵結層24與晶圓12之作用表面18以及基板14之鍵結表面22鍵結。與先前技術之黏著帶不同,鍵結層24為在整個厚度上皆均勻(化學上相同)的材料。換言之,整個鍵結層24由相同組成物形成。
應瞭解,由於鍵結層24可藉由旋塗或噴塗塗覆於作用表面18,因此鍵結組成物流入且溢出各個形貌特徵。此外,鍵結層24在作用表面18之形貌上形成均勻層。為了說明此點,圖1展示位於末端部分21處且與背表面16實質上平行的由虛線指定之平面26。此平面與鍵結表面22之間的距離以厚度「T」表示。在平面26及基板14之整個長度上,厚度「T」之變化將小於約20%,較佳小於約10%,更佳小於約5%,甚至更佳小於約2%,且最佳小於約1%。
接著可使晶圓包裝經受後續基板薄化(或其他加工),如圖1(b)中所示,其中12'表示薄化之後的晶圓12。應瞭解,基板可薄化至小於約100μm、較佳小於約50μm、且更佳
小於約25μm之厚度。薄化之後,可進行典型的背面加工,包括背研、圖案化(例如光微影、通路蝕刻)、鈍化及金屬化,及其組合。
乾燥的本發明組成物層有利地具有許多高度需要之性質。舉例而言,該等層在真空蝕刻加工時將釋放較少氣體。亦即,若在80-250℃下烘焙15μm厚之組成物膜2-60分鐘(更佳為2-4分鐘),則將自組成物中逐出溶劑,以致隨後在140-300℃下烘焙2-4分鐘引起小於約5%、較佳小於約2%、且甚至更佳小於約1.0%或甚至0%之膜厚度變化(稱為「膜收縮測試(Film Shrinkage Test)」)。因而,該等乾燥層可加熱至高達約350℃、較佳高達約320℃、更佳高達約300℃之溫度,而該層中不發生化學反應。在一些具體實例中,該等層亦可暴露於溫度為80℃之極性溶劑(例如,N-甲基-2-吡咯啶酮)中15分鐘而不發生反應。
即使在暴露於酸或鹼之後,該等乾燥層之鍵結完整性亦可能維持。亦即,厚度為約15μm之乾燥組成物層可浸沒於85℃之酸性介質(例如濃硫酸)或鹼(例如30wt.% KOH)中約45分鐘,而維持鍵結完整性。鍵結完整性可藉由使用玻璃載體基板且透過該玻璃載體基板目測觀察鍵結組成物層來檢查氣泡、孔隙等加以評估。又,若用手無法分離作用晶圓與載體基板,則鍵結完整性得以維持。
在所要之加工進行之後,可自載體基板分離作用晶圓或基板。在一個具體實例中,藉由加熱至足以軟化鍵結層之溫度分離作用晶圓與基板。更特定言之,加熱堆疊至至
少約100℃、較佳至少約120℃、且更佳約150℃至約300℃之溫度。此等溫度範圍表示鍵結組成物層之較佳脫鍵結溫度。此加熱將引起鍵結組成物層軟化且形成軟化之鍵結組成物層24',如圖1(c)中所示,此時可例如藉由滑動分開分離該兩個基板。圖1(c)顯示軸28,其穿過晶圓12與基板14,且將在一般垂直於軸28之方向上施加滑動力。除滑動外,亦可藉由向上提昇(亦即在一般遠離晶圓12或基板14中之另一者的方向上)以分離晶圓12與基板14來分離晶圓12或基板14。
或者,除加熱以軟化該層外,亦可使用溶劑溶解鍵結組成物。一旦該層溶解,隨後即可分離作用晶圓與基板。適合用於溶解鍵結層之溶劑可為在乾燥之前作為組成物之一部分的任何溶劑,諸如選自由以下組成之群的溶劑:MEK及環戊酮,以及選自由薴、1,3,5-三甲苯、雙戊烯、蒎烯、聯環己烷、環十二烯、1-第三丁基-3,5-二甲基苯、丁基環己烷、環辛烷、環庚烷、環己烷、甲基環己烷及其混合物組成之群的烴溶劑。
應瞭解,不論鍵結組成物是經軟化還是經溶解,分離均可藉由簡單地施加力以滑動及/或提昇晶圓12或基板14中之一者,同時維持另一者處於實質上固定之位置以抵抗滑動力或提昇力(例如藉由同時向晶圓12及基板14施加相對的滑動力或提昇力)來實現。此均可經由習用設備實現。
可依序藉由用適合的溶劑沖洗及旋轉乾燥,容易地移
除餘留在裝置區域中之任何鍵結組成物。適合的溶劑包括在乾燥之前作為組成物之一部分的原始溶劑以及上文所列之適於在脫鍵結期間溶解組成物的溶劑。在暴露於溶劑中5-15分鐘之後,任何餘留之組成物均將完全溶解(至少約98%,較佳至少約99%,且更佳約100%)。亦可接受藉由使用電漿蝕刻(單獨使用或與溶劑移除方法組合使用)來移除任何餘留之鍵結組成物。此步驟之後,將留下無鍵結組成物之潔淨晶圓12'及載體基板14(其潔淨狀態未圖示)。
以下實施例陳述本發明之較佳方法。然而,應理解,此等實施例係以說明之方式提供,且其中任何描述均不應視為對本發明之總體範疇的限制。
環烯烴共聚物樹脂與低分子量COC樹脂之摻合物
在此實施例中,製造含有環烯烴共聚物及低分子量COC樹脂的調配物。向一些調配物中添加抗氧化劑。
1.樣品1.1
在此程序中,將1.2公克乙烯-降冰片烯共聚物(TOPAS® 5010,Tg 110℃;獲自TOPAS Advanced Polymers,Florence,KY)以及2.8公克低分子量環烯烴共聚物(TOPAS® Toner TM,Mw 8,000,Mw/Mn 2.0)溶解於6公克D-薴(Florida Chemical公司)中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
2.樣品1.2
在此程序中,將0.75公克乙烯-降冰片烯共聚物(TOPAS® 8007,Tg 78℃)及3.25公克低分子量COC(TOPAS® Toner TM)溶解於6公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
3.樣品1.3
對於此程序,將1.519公克乙烯-降冰片烯共聚物(TOPAS® 5013,Tg 134℃)以及2.481公克低分子量環烯烴共聚物(TOPAS® Toner TM)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
4.樣品1.4
在此程序中,將1.2公克乙烯-降冰片烯共聚物(TOPAS® 8007)以及2.8公克低分子量環烯烴共聚物(TOPAS® Toner TM)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
5.樣品1.5
對於此程序,將2.365公克乙烯-降冰片烯共聚物(TOPAS® 5013)以及1.635公克低分子量環烯烴共聚物(TOPAS® Toner TM)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX®
P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
6.樣品1.6
在此程序中,將2.2公克由開環聚合製備之基於氫化降冰片烯之共聚物(ZEONOR® 1060,Tg 100℃;獲自Zeon Chemicals,Louisville,KY)及1.8公克低分子量環烯烴共聚物(TOPAS® Toner TM)溶解於5.92公克環辛烷(Aldrich,Milwaukee,WI)中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
環烯烴共聚物樹脂與增黏劑之摻合物
在此實施例中,製造含有與各種增黏劑摻合之環烯烴共聚物的調配物。如實施例1中,向一些調配物中添加抗氧化劑。
1.樣品2.1
在此程序中,將0.83公克乙烯-降冰片烯共聚物(TOPAS® 8007)以及3.17公克氫化烴樹脂(REGALITE® R1125;獲自Eastman Chemical公司,Kingsport TN)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
2.樣品2.2
對於此程序,將0.7公克乙烯-降冰片烯共聚物
(TOPAS® 8007)及3.3公克苯乙烯化萜樹脂(ZONATAC® NG98;獲自Arizona Chemical,Jacksonville,FL),以及0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
3.樣品2.3
在此調配物中,將1.9公克乙烯-降冰片烯共聚物(TOPAS® 5013)以及2.1公克環脂族烴樹脂(ARKON® P-140;獲自Arakawa Chemical USA公司,Chicago,IL)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。
4.樣品2.4
對於此程序,將2.42公克乙烯-降冰片烯共聚物(TOPAS® 5013)以及1.58公克環脂族烴樹脂(PLASTOLYN® R-1140;獲自Arakawa Chemical USA公司,Chicago,IL)、0.04公克酚系抗氧化劑(IRGANOX® 1010)及0.04公克亞膦酸二酯抗氧化劑(IRGAFOX® P-EPQ)溶解於5.92公克D-薴中。在室溫下攪拌該溶液直至該等成分溶於溶液中。溶液具有約40%之固體。
塗覆、鍵結與脫鍵結及分析
將上述實施例1及2中所製備之調配物旋塗於各種基
板晶圓上。在烘焙以蒸發溶劑且使鍵結組成物重熔之後,藉由施加壓力使第二晶圓與各經塗佈之晶圓結合。使用鍵結組成物進行暫時性晶圓晶圓結合之典型程序說明於圖2中。測試鍵結之晶圓的機械強度、熱穩定性及耐化學性。藉由在可接受之溫度下手動滑動晶圓使之分開來測試晶圓之脫鍵結。脫鍵結之後,使用溶劑沖洗且旋轉來清潔鍵結組成物殘餘物。
測試實施例1及2之各調配物的流變性質。所有此等材料均成功地測試到脫鍵結。確定樣品1.1、1.2、2.1及2.2之較佳脫鍵結溫度為150℃。樣品1.3、1.4及2.3之較佳脫鍵結溫度為200℃,且樣品1.5、1.6及2.4之較佳脫鍵結溫度為250℃。各樣品在其較佳脫鍵結溫度下之儲存模數(G')及熔融黏度(η*,複合黏度係數)報導如下。各脫鍵結溫度之流變資料亦說明於圖3-5中。
亦對此等組成物進行關於熱穩定性及耐化學性之其他研究。在TA Instruments熱重量分析儀上進行熱重量分析(TGA)。藉由刮下經旋塗且烘焙之實施例1及2之鍵結組成物樣品獲得TGA樣品。對於等溫TGA量測,在氮氣中以10℃/分鐘之速率加熱樣品至其較佳脫鍵結溫度加50℃,且在該溫度下保持恆定1小時以測定特定鍵結組成物之熱穩定性。各樣品調配物之等溫量測報導於下表2中。對於掃描TGA量測,在氮氣中以10℃/分鐘之速率,將樣品自室溫加熱至650℃。
如由上表可見,所有COC-低分子量COC樹脂摻合物(實施例1)在至少高達300℃下具有所需要之熱穩定性,且展現最少重量損失(<1.5wt%)。當維持在測試溫度下時,COC-增黏劑摻合物(實施例2)具有約5wt%之平均重量損失。然而,如下表3所示,1wt%重量損失之溫度高於其各別之鍵結/脫鍵結溫度,表明耐熱性足以進行晶圓結合塗覆。
為測定耐化學性,使用待測試之特定鍵結組成物鍵結兩個矽晶圓。將經鍵結之晶圓置放於85℃下之N-甲基-2-吡咯啶酮(NMP)或30重量% KOH化學浴中及室溫下之濃硫酸化學浴中來測定耐化學性。45分鐘後目測觀察鍵結完整性,且測定鍵結組成物針對各別化學品之穩定性。所有鍵結組成物均保持鍵結完整性。
10‧‧‧堆疊
12‧‧‧作用晶圓
12'‧‧‧無鍵結組成物之潔淨晶圓
14‧‧‧載體晶圓/基板
16‧‧‧背表面
18‧‧‧作用表面
20a‧‧‧形貌特徵
20b‧‧‧形貌特徵
20c‧‧‧形貌特徵
20d‧‧‧形貌特徵
21‧‧‧末端部分
22‧‧‧鍵結表面
24‧‧‧鍵結組成物層/鍵結層
24'‧‧‧軟化之鍵結組成物層
26‧‧‧虛線/平面
28‧‧‧軸
T‧‧‧厚度
圖1說明使兩個本發明之晶圓薄化及脫鍵結的本發明方法;圖2為展示實施例中所遵循之典型加工步驟的流程圖;圖3為描繪在150℃下脫鍵結之本發明之鍵結組成物的流變分析結果的曲線圖;圖4為描繪在200℃下脫鍵結之本發明之鍵結組成物的流變分析結果的曲線圖;及圖5為描繪在250℃下脫鍵結之本發明之鍵結組成物的流變分析結果的曲線圖。
10‧‧‧堆疊
12‧‧‧作用晶圓
12'‧‧‧無鍵結組成物之潔淨晶圓
14‧‧‧載體晶圓/基板
16‧‧‧背表面
18‧‧‧作用表面
20a‧‧‧形貌特徵
20b‧‧‧形貌特徵
20c‧‧‧形貌特徵
20d‧‧‧形貌特徵
21‧‧‧末端部分
22‧‧‧鍵結表面
24‧‧‧鍵結組成物層/鍵結層
24'‧‧‧軟化之鍵結組成物層
26‧‧‧虛線/平面
28‧‧‧軸
T‧‧‧厚度
Claims (32)
- 一種晶片鍵結方法,其包含:提供包含經由鍵結層鍵結在一起之第一基板及第二基板的堆疊,該層係由包含溶解或分散於溶劑系統中之第一環烯烴共聚物及第二環烯烴共聚物的組成物形成,該第二環烯烴共聚物為低分子量環烯烴共聚物,其中增黏劑並未存在於該組成物中;及分離該第一基板與該第二基板。
- 如申請專利範圍第1項之方法,其進一步包含使該堆疊經受至少約100℃之溫度以在該分離之前軟化該鍵結層。
- 如申請專利範圍第1項之方法,其進一步包含在該分離之前用溶劑溶解該鍵結層。
- 如申請專利範圍第3項之方法,該溶劑係選自由以下組成之群:薴、1,3,5-三甲苯、雙戊烯、蒎烯、聯環己烷、環十二烯、1-第三丁基-3,5-二甲基苯、丁基環己烷、環辛烷、環庚烷、環己烷、甲基環己烷、甲基乙基酮、環戊酮及其混合物。
- 如申請專利範圍第1項之方法,其中該分離包含向該第一基板及該第二基板中之至少一者施加力,同時使該第一基板及該第二基板中之另一者抵抗該力,該力係以足以分離該第一基板與該第二基板之量施加。
- 如申請專利範圍第1項之方法,其進一步包含在該分離之前,使該堆疊經受選自由以下組成之群的加工:背研、金屬化、圖案化、鈍化及其組合。
- 如申請專利範圍第1項之方法,其中該提供堆疊包含:向該第一基板及該第二基板中之至少一者塗覆鍵結組成物;及使該等基板彼此接觸以將該等基板鍵結在一起。
- 如申請專利範圍第1項之方法,其中:該第一基板具有第一表面及第二表面,該第二表面遠離該第一表面且包含至少一個作用部位及複數個形貌特徵,且該鍵結組成物層與該第二表面鍵結;且該第二基板包含與該鍵結組成物層鍵結之鍵結表面。
- 如申請專利範圍第8項之方法,其中:該等形貌特徵呈現遠離該第一基板之第一表面的各別端表面,且該等端表面中之至少一個比該等端表面中之其他端表面離該第一基板之第一表面遠,該更遠端表面界定實質上與該第一表面平行之平面;且該平面與該第二基板上之鍵結表面之間的距離在整個該平面及該第二基板鍵結表面上之變化小於約20%。
- 如申請專利範圍第1項之方法,該組成物進一步包含選自由增塑劑、抗氧化劑及其混合物組成之群的成分。
- 如申請專利範圍第1項之方法,其中該第一共聚物係由選自由以下組成之群的環烯烴之聚合作用形成:
- 如申請專利範圍第1項之方法,其中該第一共聚物包含如下重複單體:(I):
- 一種物件,其包含:第一基板,其具有背表面及作用表面,該作用表面包含至少一個作用部位及複數個形貌特徵;第二基板,其具有鍵結表面;及鍵結層,其與該作用表面及該鍵結表面鍵結,其中該鍵結層係由包含溶解或分散於溶劑系統中之第一環烯烴共聚物及第二環烯烴共聚物的組成物形成,該第二環烯烴共聚物為低分子量環烯烴共聚物,其中增黏劑並未存在於該組成物中。
- 如申請專利範圍第13項之物件,其中:該等形貌特徵呈現遠離該第一基板之背表面的各別端表面,且該等端表面中之至少一個比該等端表面中之其他端表面離該第一基板之背表面遠,該更遠端表面界定實質上與該第一表面平行之平面;且該平面與該第二基板上之鍵結表面之間的距離沿該平面及該第二基板鍵結表面之變化小於約20%。
- 如申請專利範圍第13項之物件,其中該第一基板係選自由以下組成之群:微機電系統裝置、顯示裝置、撓性基板、化合物半導體、低k介電層、介電層、離子植入層、 及包含矽、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、亞硝酸鉭、SiGe及前述各物之混合物的基板。
- 如申請專利範圍第13項之物件,其中該第二基板包含選自由以下組成之群的材料:藍寶石、陶瓷、玻璃、石英、鋁、銀、矽、玻璃-陶瓷複合物及其組合。
- 如申請專利範圍第13項之物件,其中該第一共聚物係由選自由以下組成之群的環烯烴之聚合作用形成:
- 如申請專利範圍第13項之物件,其中第一共聚物包含如下重複單體: (I):
- 如申請專利範圍第13項之物件,該組成物進一步包含選自由增塑劑、抗氧化劑及其混合物組成之群的成分。
- 如申請專利範圍第13項之物件,其中該第二環烯烴共聚物具有重量平均分子量小於約50,000道爾頓。
- 一種組成物,其適用於將兩個基板鍵結在一起,該組成物包含溶解或分散於溶劑系統中之第一環烯烴共聚物及成分,以該組成物之總重量視作100重量%計,其中該組成物包含自約2重量%至約80重量%的該成分,該成分為第二環烯烴共聚物,其中該第二環烯烴共聚物具有重量平均分子量自約500至約10000道爾頓,其中增黏劑並未存在於該組成物中。
- 如申請專利範圍第21項之組成物,該組成物包含以該組成物之總重量視作100重量%計,約5重量%至約85 重量%之該第一環烯烴共聚物。
- 如申請專利範圍第21項之組成物,其中該溶劑系統係選自由以下組成之群:薴、1,3,5-三甲苯、雙戊烯、蒎烯、聯環己烷、環十二烯、1-第三丁基-3,5-二甲基苯、丁基環己烷、環辛烷、環庚烷、環己烷、甲基環己烷、甲基乙基酮、環戊酮及其混合物。
- 如申請專利範圍第21項之組成物,該第一環烯烴共聚物係由選自由以下組成之群的環烯烴之聚合作用形成:
- 如申請專利範圍第24項之組成物,其中該環烯烴係 與選自由分支及未分支C2-C20烯烴組成之群的非環烯烴聚合。
- 如申請專利範圍第21項之組成物,其中該第一環烯烴共聚物包含如下重複單體:(I):
- 如申請專利範圍第21項之組成物,其中該組成物基本上不含黏著促進劑。
- 如申請專利範圍第21項之組成物,該組成物在高達約350℃之溫度下具有熱穩定性。
- 如申請專利範圍第21項之組成物,該組成物基本上不含交聯劑。
- 如申請專利範圍第22項之組成物,該組成物進一步包含選自由酚系抗氧化劑、亞磷酸酯抗氧化劑、亞膦酸二酯抗氧化劑及其混合物組成之群的抗氧化劑。
- 如申請專利範圍第21項之組成物,該組成物在該組成物之脫鍵結溫度下具有小於約100Pa.S之熔融黏度。
- 如申請專利範圍第1項之方法,其中該第二環烯烴共聚物具有重量平均分子量自約500至約10000道爾頓
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SG185250A1 (en) | 2012-11-29 |
JP2013014777A (ja) | 2013-01-24 |
JP5836804B2 (ja) | 2015-12-24 |
CN103021807A (zh) | 2013-04-03 |
EP2623573B1 (en) | 2020-03-25 |
EP2362970B1 (en) | 2019-04-10 |
CN102203917B (zh) | 2015-09-02 |
TW201350552A (zh) | 2013-12-16 |
EP2362970A4 (en) | 2013-05-29 |
KR101717807B1 (ko) | 2017-03-17 |
CN102203917A (zh) | 2011-09-28 |
US8221571B2 (en) | 2012-07-17 |
EP2623573B9 (en) | 2020-07-29 |
KR20110089861A (ko) | 2011-08-09 |
EP2362970A2 (en) | 2011-09-07 |
EP2623573A2 (en) | 2013-08-07 |
US8771442B2 (en) | 2014-07-08 |
KR20120115579A (ko) | 2012-10-18 |
WO2010051212A2 (en) | 2010-05-06 |
JP5792699B2 (ja) | 2015-10-14 |
CN103021807B (zh) | 2016-05-04 |
TW201022388A (en) | 2010-06-16 |
US8092628B2 (en) | 2012-01-10 |
US20110086955A1 (en) | 2011-04-14 |
EP2623573A3 (en) | 2014-01-15 |
TWI494398B (zh) | 2015-08-01 |
US20100112305A1 (en) | 2010-05-06 |
US20120291938A1 (en) | 2012-11-22 |
JP2012507600A (ja) | 2012-03-29 |
KR101705915B1 (ko) | 2017-02-10 |
WO2010051212A3 (en) | 2010-07-08 |
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