TWI508218B - 用於使用滑動方法以暫時性晶圓黏合的高溫旋塗黏合組成物 - Google Patents
用於使用滑動方法以暫時性晶圓黏合的高溫旋塗黏合組成物 Download PDFInfo
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- TWI508218B TWI508218B TW096136190A TW96136190A TWI508218B TW I508218 B TWI508218 B TW I508218B TW 096136190 A TW096136190 A TW 096136190A TW 96136190 A TW96136190 A TW 96136190A TW I508218 B TWI508218 B TW I508218B
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Description
在由美國陸軍研究發展和工程學指揮部授與的合約第W911SR-05-C-0019號之下,藉著政府的支持進行本發明。美國政府在本發明中有某些權利。
本發明亦主張2006年10月6日申請之美國臨時專利申請案第60/828,572號,標題為“用於使用滑動方法以暫時性晶圓黏合的高溫旋塗黏合劑”之優先權,將其完整揭示內容以引用方式納入本文中。
本發明廣泛地關於新穎的組成物和使用該等組成物形成黏合組成物的方法,其可在晶圓薄化及其他加工期間,在運送晶圓或基板上支撐活性晶圓。
已經使用晶圓(基板)薄化來分散熱,並幫助積體電路(IC)的電操作。厚的基板導致電容增加、需要較厚的傳輸線,且轉而需要較大的IC面積。基板薄化增加了阻抗,同時電容降低阻抗,使傳輸線厚度減少,並轉而減少IC的大小。因此,基板薄化有助於IC的微型化。
幾何限制是基板薄化的另一動機。在基板的背面上蝕刻導通孔,有助於正面的接觸。為了使用普通的乾蝕刻技術建構導通孔,運用到幾何限制。對於小於100微米之基板厚度,使用乾-蝕刻法建構具有直徑30-70微米的導通孔,在可接受的時間內產生最少的蝕刻後殘留物。至於厚的基板,則需要具有較大直徑的導通孔。這需要較長的乾-蝕刻時間,並產生較大量的蝕刻後殘留物,因此顯著地降低生產率。較大的導通孔亦需要較大量的金屬化,其成本較高。因此,對背面加工而言,薄基板可以較快速地加工且成本較低。
薄基板亦較容易切割,並畫線成ICs。較薄的基板具有較少量的材料被貫穿和切割,並因此較不費力。無論使用什麼方法(鋸線、畫線和折斷,或雷射濺鍍),來自較薄基板的IC都是較容易切割的。大多數的半導體晶圓在前段操作之後就被薄化。為了容易操作,將晶圓加工(即前段設計)成其正常的全尺寸厚度,例如600-700微米。一旦完成,便將它們薄化至100-150微米之厚度。在某些情況下(例如當為了高-功率元件而使用混成基板,如砷化鎵(GaAs)時),可能採用25微米以下的厚度。
藉著使晶圓表面與含有液體漿料之水平滾動的硬平盤接觸,完成機械的基板薄化。該漿料可含有研磨介質以及化學蝕刻劑,如氨、氟或其組合。研磨料提供了”顯著的(gross)”基板移除,即薄化,同時蝕刻劑亦在化學上有助於在亞微米程級上的”研磨”。保持晶圓與該介質接觸,直到已經移除之基板的量達到目標厚度為止。
對於厚度為300微米或更厚的晶圓而言,利用真空夾盤的工具或一些機械接合的方法將晶圓固定在適當位置。當晶圓厚度降至300微米以下時,在進一步薄化和加工期間,晶圓的接合和操作會變得很難或不可能保持控制。在某些情況下,機械裝置被製成能接合並夾住變薄的晶圓,然而,它們遇到許多問題,尤其是當加工為多樣化的時候。為了該項理由,將晶圓(“活性”晶圓)安裝在個別堅硬的(運送)基板或晶圓上。該基板變成支撐平台,以便進一步薄化或薄化後加工。運送基板是由諸如藍寶石、石英、某些玻璃和矽之類的材料組成,且通常展現1000微米之厚度。基板的選擇將視在每個材料之間的熱膨脹係數(CTE)有多密切而定。
用來將活性晶圓安裝在運送基板上之一方法包括使用經硬化的黏合組成物。該方法的主要缺點是該組成物典型地必須藉由溶解在溶劑中以化學方式移除。這是非常耗時的,因此降低了生產量。此外,溶劑的使用增加了製成的成本和複雜性,並視溶解該黏合組成物所需的溶劑而定可能是有害的。
將活性晶圓安裝在運送基板上的其他方法是經由熱分離的膠帶。該製程有兩個主要缺點。第一,在整個活性晶圓/運送基板介面中,膠帶具有受限制的厚度均一性,而該受限制的均一性通常不適合超-薄的晶圓的操作。其次,熱分離黏著膠帶經常在這樣的低溫下軟化,使得已黏合的晶圓/運送基板堆疊不耐許多在較高溫度下進行的典型晶圓加工步驟。
需要一種新穎的組成物,以及將活性晶圓黏著在運送基板上的方法,其可忍受高的加工溫度,並允許在加工的適當階段迅速地分離晶圓和基板。
在一具體態樣中,本發明為一種晶圓黏合方法,其中包括經由黏合層黏合在一起的第一和第二基板的堆疊較佳地被施以各種加工步驟(例如晶圓薄化)。然後將經過加工的堆疊加熱至至少大約190℃之溫度,並對至少一個基板施加滑動力,同時例如藉著固定另一個基板或對它施加相對的力而使另一個基板對抗該滑動力。所施加的力足以將基板分開。
在另一具體態樣中,本發明提供一物件,包括:具有背表面和活性表面的第一基板;具有黏合表面的第二基板;以及黏合活性和黏合表面的黏合層。
在一具體態樣中,黏合層是由包括溶解或分散在溶劑系統中之聚合物(或聚合物摻合物)和增黏劑,如蒎烯或聚(蒎烯)的組成物形成,該聚合物含有環烯烴的重複單體。
在另一具體態樣中,本發明提供一種可流動的黏合組成物,其包括增黏劑和含有包括環-烯烴之重複單體的聚合物。將增黏劑和聚合物分散或溶解於溶劑系統中,以將組成物之總重量視為100重量%為基礎,該溶劑系統構成至少大約30重量%的組成物。
在一具體態樣中,提供一種可流動的黏合組合物,包括增黏劑和選自由橡膠、苯乙烯-異戊二烯-苯乙烯、苯乙烯-丁二烯-苯乙烯、鹵化丁基橡膠及其混合物所組成之群組的化合物。將該增黏劑和化合物分散或溶解於溶劑系統中,以將組成物之總重量視為100重量%為基礎,該溶劑系統構成至少大約30重量%的組成物。
更詳細地說,本發明組成物包括分散或溶解於溶劑系統中的聚合物(其包含聚合物混合物)。以將在組成物中固體的總重量視為100重量%為基礎,該聚合物較佳是以從大約5重量%到大約50重量%,更佳的是從大約5重量%到大約35重量%,而再更佳的是從大約10重量%到大約35重量%的量存出於組成物中。
較佳的聚合物是熱塑性材料,且較好是具有從大約500道爾吞到大約1,000,000道爾吞的重量平均分子量,而更佳的是從大約1,000道爾吞到大約500,000道爾吞。較佳的聚合物最好是具有至少大約50℃的軟化點(環和球的軟化點),更佳的是至少大約100℃,而再更佳的是從大約100℃到大約200℃。
較佳的聚合物當允許放置在周圍溫度下時會有至少大約95重量%,更佳的是至少大約98重量%,而再更佳的是大約100重量%溶解於溶劑(例如檸檬烯、均三甲苯、二甲苯、甲基異戊基酮、乙醯乙酸乙酯及/或十二烯)中約1-24小時的期間。
某些在本發明中實施的較佳聚合物包括選自由纖維素聚合物(如醋酸纖維素聚合物)、環烯烴聚合物(如以Zeonex之名販售者)、橡膠(例如乙烯-丙烯三元共聚物(EPM)、三元乙丙橡膠(EPDM)、苯乙烯-異戊二烯-苯乙烯、苯乙烯-丁二烯-苯乙烯、聚烯烴、乙烯-醋酸乙烯、鹵化丁基橡膠及其混合物所組成之群組者。
以將組成物的總重量視為100重量%為基礎,組成物應包括至少大約30重量%的溶劑系統,較佳的是從大約50到大約95重量%的溶劑系統,更佳的是從大約65-95重量%的溶劑系統,而再更佳的是從大約65-90重量%的溶劑系統。溶劑系統應具有從大約100-200℃之沸點,且較佳的是從大約120-180℃。
適當的溶劑包括選自由檸檬烯(特別是D-檸檬烯)、均三甲苯、二甲苯、十二烯、丙二醇單甲醚、甲基異戊基酮、乙醯乙酸乙酯及其混合物所組成之群組者。
在其他的具體態樣中,組成物可包含一些視情況需要的成分,包括表面活性劑、助黏劑、增黏劑、塑化劑和抗氧化劑。
當使用表面活性劑時,以將在組成物中固體的總重量視為100重量%為基礎,較佳是以從大約0.1重量%到大約3重量%,而更佳的是從大約0.1重量%到大約1重量%的量存在於該組成物中。適當的表面活性劑之實例包括脂肪醇乙氧基化物,如辛基酚乙氧基化物(以Triton X-100之名販售)。
當使用助黏劑時,以將在組成物中固體的總重量視為100重量%為基礎,最好是以從大約0.1重量%到大約3重量%,而更佳的是從大約0.1重量%到大約1重量%的量存在於該組成物中。適當的助黏劑之實例包括選自由雙(三甲氧基矽烷基乙基)苯、胺丙基三(烷氧基矽烷)(例如胺丙基三(甲氧基矽烷)、胺丙基三(乙氧基矽烷)、N-苯基胺丙基三(乙氧基矽烷)),以及其他矽烷偶合劑所組成之群組者。
當使用增黏劑時,以將在組成物中固體的總重量視為100重量%為基礎,最好是以從大約50重量%到大約95重量%,而更佳的是從大約75重量%到大約95重量%的量存在於該組成物中。增黏劑較佳是碳氫化合物樹脂(聚合的及/或單體的),且較佳具有從大約300-10,000道爾吞,而更佳的是從大約500-5,000道爾吞的分子量。較佳的碳氫化合物樹脂具有至少大約80℃的軟化點(環和球軟化點),而更佳的是從大約120-200℃。此外,較佳的是該碳氫化合物樹脂在190℃下具有從大約2,500-3,500cP的Brookfield黏度,更佳的是從大約2,800-3,200cP,而再更佳的是大約2,900-3,100cP。適當的增黏劑包括所有的脂肪族碳氫化合物樹脂、芳香族碳氫化合物樹脂,以及脂肪族/芳香族碳氫化合物樹脂,以及選自由松香(例如萜松香)、聚(α-蒎烯)、聚(β-蒎烯)及其混合物所組成之群組者。特佳的碳氫化合物樹脂是以EASTOTAC、PICCOTAC和REGALREZ之名販售的,全都可購自Eastman Chemical Company。
當使用抗氧化劑時,以將在組成物中固體的總重量視為100重量%為基礎,最好是以從大約0.01重量%到大約3重量%,更佳的是從大約0.01重量%到大約1.5重量%,而再更佳的是從大約0.01重量%到大約0.1重量%的量存在於該組成物中。適當的抗氧化劑之實例包括選自由酚系抗氧化劑(如季戊四醇四(3-(3,5-二-第三-丁基-4-羥苯基)丙酸酯,以Irganox1010之名由Ciba販售)和亞磷酸酯類抗氧化劑(如三(2,4-二第三-丁基苯基)亞磷酸酯,以Irgafos168之名由Ciba販售)所組成之群組者。
藉著簡單地將聚合物和其他成分與溶劑系統較佳地在從大約20-80℃的溫度下進行混合歷時大約1-24小時以形成本發明之組成物。最終組成物應該是熱塑性的(亦即不可交聯的)。因此,組成物基本上不含(低於大約0.1重量%,且較佳是大約0重量%)交聯劑。
此外,較佳的是,當最終組成物在暴露於不同溫度下的期間時只有經歷極少或沒有(即低於大約3%)的體積膨脹或改變。欲達成該目標,較佳的是該組成物基本上不含(低於大約0.1重量%,且最好是大約0重量%)發泡劑和發泡劑。發泡劑和起泡劑是在某些條件下(例如暴露在高溫下)會分解並釋放出大量氣體的化合物。
較佳的是,最終組成物較佳會具有低於大約35MU的Mooney黏度(ML(1+4)125℃;藉著ISO289/ASTM D 1646決定),更佳的是低於大約30MU,而再更佳的是從大約5到大約25MU。
較佳的是,最終組成物的黏度會低於大約1,000泊,更佳的是低於大約500,而再更佳的是從大約30到大約100泊。為了測量的目的,經由流變動力學分析決定黏度(TA Instruments,AR-2000,兩個平行-板構造,其中板具有25毫米之直徑)。此外,在250℃下決定黏度,且組成物的流失較佳為低於大約3重量%,而更佳的是低於大約2重量%。換句話說,藉著熱解重量分析法(TGA)決定在該溫度下,在組成物中發生極少或沒有發生熱分解。
雖然該組成物可先施用在運送基板或活性晶圓上,但較好是先將其施用在活性晶圓上。較佳的施用方法涉及以從大約300-3,500rpm(更佳的是從大約500-1,500rpm)的旋轉速度,以從大約500-15,000rpm/秒的加速度,旋塗該組成物歷時從大約30-300秒的旋轉時間。應瞭解可改變該施用步驟,以便達到特定的厚度。
在塗佈之後,可(例如在熱板上)烘烤基板以蒸發溶劑。典型的烘烤會是在從大約150-275℃的溫度下,而較佳的是從大約150-225℃歷時從大約2-15分鐘的期間,而更佳的是從大約3-10分鐘。在烘烤之後的薄膜厚度(在地形的上方),典型地會是至少大約5微米,而更佳的是從大約5-50微米。
在烘烤之後,使所欲的運送晶圓與本發明之組成物層接觸,並對其施加壓力。藉著在從大約150-250℃的溫度,且較佳的是從大約180-220℃下加熱來將運送晶圓與本發明之組成物黏合。該加熱較佳是在真空下,在從大約1到大約15千牛頓的黏合力下進行歷時從大約1-10分鐘的期間。
圖1(a)顯示典型的堆疊10,其包括活性晶圓12和運送晶圓或基板14。活性晶圓12包括背面16和活性表面18。活性表面18可包括一或多個活性位置(未顯示),以及多個地形特徵(升高的特徵或線,以及凹處、溝渠或間隙),像是例如以20a-d指定者。特徵20d代表在活性表面18上”最高的”特徵。也就是說,端點部分或表面21比在晶圓12上任何其他地形特徵之各自的端點部分,離晶圓12的背面16更遠。
典型的活性晶圓12可含有任何微電子基板。一些可能的活性晶圓12之實例包括選自由微機電系統(MEMS)裝置、顯示器裝置、彈性基板(例如經硬化的環氧基板、捲曲基板,其可用以形成圖像)、化合物半導體、低k介電層、介電層(例如氧化矽、氮化矽)、離子佈植層和包括矽、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、亞硝酸鉭、SiGe的基板及前述之混合物所組成之群組者。
運送基板14具有黏合表面22。典型的運送基板14包括選自由藍寶石、陶瓷、玻璃、石英、鋁、銀和矽所組成之群組的材料。
經由黏合組成物層24將晶圓12和運送基板14黏合在一起。黏合層24是由上述的聚合物組成物形成,並亦已經如上所述般地施用和乾燥。如在圖1(a)中所示,黏合層24與晶圓12的活性表面18以及基板14的黏合表面22黏合。不像先前技術的膠帶般,黏合層24是一種在其整個厚度中為均一的(在化學上是相同的)材料。換句話說,整個黏合層24都是由相同的組成物形成。
應瞭解的是,因為黏合層24可藉著旋塗施用在活性表面18上,故黏合組成物流入並覆蓋各種地形特徵。此外,黏合層24形成覆蓋活性表面18之地形的均勻層。欲說明此點,圖1顯示在端點部分21上且實質上與背面16平行之以虛線26表示的平面。以厚度”T”表示從該平面到黏合表面22的距離。厚度T是總厚度變化,且它在從平面26到基板14的長度中會有低於大約8%的改變,較佳的是低於大約5%,更佳的是低於大約2%,而再更佳的是低於大約1%。
如在圖1(b)中所示,然後使晶圓包裝經歷基板的後續薄化(或其他加工),其中晶圓12’代表在薄化之後的晶圓12。應瞭解可將基板變薄至低於大約100微米之厚度,較佳的是低於大約50微米,而更佳的是低於大約25微米。在薄化之後,可進行典型的背面加工,包括微影術、孔洞蝕刻和金屬化作用。
有利的是,本發明組成物之經乾燥層具有一些高度合意的特性。例如,該層對於真空蝕刻製程展現出低除氣作用。也就是,若在200℃下烘烤15-微米厚的該組成物薄膜2分鐘,溶劑會從組成物中衍生出以致於在200℃下進行後續的烘烤60分鐘會使薄膜厚度的改變低於大約5%,較佳低於大約2%,而更佳的是低於大約1%或甚至0%(稱為”薄膜收縮測試”)。因此,可將乾燥層加熱至高達大約190℃的溫度,較佳的是高達大約200℃,更佳的是高達大約220℃,而再更佳的是高達大約240℃,而在該層中沒有發生物理變化或化學反應。例如,該層在這些溫度以下不會軟化。在某些具體態樣中,亦可在85℃下將該層暴露在極性溶劑(例如NMP、PGME)下90分鐘,而沒有起反應。
甚至當暴露在酸或鹼之下時,仍可維持乾燥層的黏合完整性。也就是可將具有厚度大約15微米的經乾燥組成物層在85℃下浸在酸性介質(例如濃縮的硫酸)或鹼(例如30重量%的KOH)中大約45分鐘,同時仍維持黏合的完整性。可藉著使用玻璃運送基板,並目視觀察通過玻璃運送基板之黏合組成物層以檢查氣泡、空隙等等來評估黏合的完整性。再者,若不能用手分開活性晶圓和運送基板,便仍維持黏合的完整性。
黏合組成物亦是對熱穩定的。當被施以如本文中描述之熱解重量分析法(TGA)測試時,黏合組成物會顯示低於大約4%,更佳的是低於大約2%,而再更佳的是低於大約1%的重量流失%(在200℃下60分鐘)。
在已經進行所欲的加工之後,可藉著加熱至至少大約190℃的溫度,較佳的是至少大約200℃,更佳的是至少大約220℃,而再更佳的是至少大約240℃,將活性晶圓或基板與運送基板分開。這些溫度範圍代表黏合組成物層的較佳軟化點。加熱會引起黏合組成物層軟化,並形成軟化的黏合組成物層24’,如在圖1(c)中所示,在此時可藉著滑開將兩個基板分開。圖1(c)亦顯示通過晶圓12和基板14之軸線28,且滑動力是以大體上對軸線28為橫向的方向來施加。或者,不一定要滑動,而改以向上提升晶圓12或基板14(即以大體上遠離另一個晶圓12或基板14的方向),將晶圓12與基板14分開。
應瞭解可藉著簡單滑動及/或提升晶圓12或基板14之一,完成分開,同時仍將另一個維持在實質上靜止的位置,以便對抗滑動或抬起的力量(例如藉著同時對晶圓12和基板14施加相反的滑動力)。這全都可經由傳統的設備完成。
可輕易地使用原始溶劑以及使用諸如二甲苯、苯和檸檬烯之溶劑來移除任何殘留在元件區上的黏合組成物,該原始溶劑為乾燥前組成物的一部分。在與溶劑接觸5-15分鐘之後,會完全溶解任何之後殘留的組成物(至少大約98%,較佳的是至少大約99%,而更佳的是大約100%)。可接受使用電漿蝕刻(其可單獨或與溶劑移除製程倂用)移除任何殘留的黏合組成物。在該步驟之後,會留下乾淨、無黏合組成物的晶圓12’和運送基板14(未顯示它們的乾淨狀態)。
下列的實施例陳述根據本發明的較佳方法。然而,應瞭解提供這些實施例係作為解釋,不應將其中任何事物視為對本發明之全部範圍的限制。
藉著將各種纖維素衍生物(獲自Eastman Chemical Company,Kingsport,TN)溶解於適當的溶劑中來製備調配物。在表I中報告了所使用的精確材料和用量。
環烯烴樹脂和聚(α-蒎烯)摻合物藉著將Zeonex480R樹脂(獲自 Zeon Chemicals,Louisville,KY)及/或聚(α-蒎烯)(獲自Aldrich,Milwaukee,WI)及/或聚(β-蒎烯)(獲自Aldrich,Milwaukee,WI)溶解於D-檸檬烯(獲自Florida Chemical Company)中製得調配物。加入作為助黏劑之雙(三甲氧矽烷基乙基)苯(獲自Aldrich,Milwaukee,WI)。在表Ⅱ中報告了調配物的精確組成。
環烯烴樹脂和松香酯摻合物藉著將Zeonex480R樹脂和EastotacH142W(獲自Eastman Chemicals,Kingsport,TN)溶解於適當的溶劑中以製得調配物。在調配物其中之一加入Irganox1010和Irgafos168(獲自Ciba Specialty Chemicals,Tarrytown,NY)以防止在高溫下熱氧化。加入TritonX-100(獲自Aldrich,Milwaukee,WI),減少去濕的問題,並加入雙(三甲氧矽烷基乙基)苯促進黏著。在表Ⅲ中報告了調配物的精確組成。
EPDM橡膠和松香酯摻合物藉著將不同等級的三元乙丙橡膠(EPDM橡膠;Buna EP T6250,獲自Lanxess,Inc.,Pittsburgh,PA;和Vistalon 2504,Exxon-Mobil Chemical,Houston,TX)和EastotacH142W溶解於適當的溶劑中以製得調配物。在四個調配物之其中三個加入抗氧化劑I艾克諾1010。在表Ⅳ中報告了調配的精確組成。
施用、黏合和脫黏合將得自實施例1-4的調配物旋塗在各種基板晶圓上。在烘烤蒸發溶劑並允許黏合組成物回流之後,藉著施加壓力將第二晶圓黏合到每個已塗佈的晶圓上。使用這些黏合組成物以暫時性晶圓黏合的程序係說明在圖2所示之流程圖中。測試經黏合晶圓的機械強度、熱穩定性和化學阻抗。在可接受的溫度下以手工滑動分開以測試晶圓的脫黏合。
黏合組成物的分析從流變分析中,確認樣品1.4、2.2、3.4和4.4之組成物是暫時性晶圓黏合的較佳材料。圖3、4、5和6分別顯示樣品1.4、2.4、3.4和4.4的結果。在表V中報告了這些材料的黏度和模量值,並針對脫黏合順利地測試這些材料。如下述亦對這四個組成物進行了熱穩定性和化學抗性的進一步研究。
在TA Instruments熱解重量分析儀上進行熱解重量分析(TGA)。藉著括擦在實施例中列舉之經過旋塗和烘烤的黏合組成物樣品以獲得TGA樣品。以10℃/分鐘之速度,將樣品加熱至高達200℃,並恆定地保持在200℃下較長的期間,以便判定特定黏合組成物的熱穩定性。所有該等組成物在200℃下均具有所需的熱穩定性,並顯示最低的除氣(參見表Ⅵ)。
為決定化學阻抗,使用欲測試之特定黏合組成物黏合兩個矽晶圓。將已黏合的晶圓放到85℃,NMP或30重量%KOH的化學浴中,以及在室溫下的濃硫酸中,決定其化學阻抗。在45分鐘後,目視觀察黏合完整性,並決定黏合組成物對抗個別化學品的穩定性。所有的黏合組成物,除了樣品1.4之外,均維持黏合完整性。
10...堆疊
12...活性晶圓
14...運送晶圓或基板
16...背面
18...活性表面
20(a)-20(d)...地形特徵
21...端點部分或表面
22...黏合表面
24...黏合層
26...平面
28...軸線
圖1說明根據本發明之薄化和脫黏合兩個晶圓的本發明方法;圖2為顯示依據實施例之加工步驟的流程圖;圖3為敘述在實施例1中描述之黏合組成物的流變分析結果的圖表;圖4為敘述在實施例2中描述之黏合組成物的流變分析結果的圖表;圖5為敘述在實施例3中描述之黏合組成物的流變分析結果的圖表;圖6為敘述在實施例4中描述之黏合組成物的流變分析結果的圖表。
10...堆疊
12...活性晶圓
14...運送晶圓或基板
16...背面
18...活性表面
20(a)-(d)...地形特徵
21...端點部分或表面
22...黏合表面
24...黏合層
26...平面
28...軸線
Claims (48)
- 一種晶圓黏合方法,其包括:提供一包括經由黏合層黏合在一起之第一和第二基板之堆疊,該黏合層是由一種黏合組成物所形成,該黏合組成物包含:增黏劑;及化合物,其選自由橡膠、苯乙烯-異戊二烯-苯乙烯、苯乙烯-丁二烯-苯乙烯、鹵化丁基橡膠及其混合物所組成之群組;該增黏劑和該化合物被溶解或分散於溶劑系統中,以將該組成物之總重量視為100重量%為基礎,該黏合組成物包括至少大約30重量%的溶劑系統;使該堆疊施以至少大約190℃之溫度以便軟化該黏合層;及對至少一個該第一和第二基板施力,同時使該第一和第二基板的另一個對抗該力,所施以之該力係足使該第一和第二基板分開。
- 如申請專利範圍第1項之方法,其中該堆疊具有通過第一和第二基板兩者的軸線,該力大體上是以相對於該軸為橫向的方向施加。
- 如申請專利範圍第1項之方法,其中該施力包括以大體上遠離該第一和第二基板之另一個的方向,將至少一個第一和第二基板提升。
- 如申請專利範圍第1項之方法,更包括在對該堆疊施 以至少大約190℃的溫度之前,先使該基板其中之一薄化。
- 如申請專利範圍第1項之方法,更包括在使該堆疊經歷至少大約190℃的溫度之前,先使該堆疊經歷選自由背面研磨、金屬化、圖案化及其組合所組成之群組的加工。
- 如申請專利範圍第1項之方法,其中該化合物為至少大約95%溶於非極性溶劑中。
- 如申請專利範圍第1項之方法,其中該組成物更包括選自由助黏劑、抗氧化劑、表面活性劑及前述之混合物所組成之群組的成分。
- 如申請專利範圍第1項之方法,其中該第一基板具有第一表面和遠離該第一表面的第二表面,並包括至少一個活性位置和多個地形特徵,且該黏合層與該第二表面黏合。
- 如申請專利範圍第8項之方法,其中該第二基板包括與該黏合層黏合之黏合表面。
- 如申請專利範圍第9項之方法,其中:該地形特徵出現於遠離該第一基板的第一表面之個自端點表面,且至少一個端點表面比其它端點表面離第一基板之第一表面更遠,該另外的端點表面界定了一實質上與該第一表面平行之平面;且從該平面到在該第二基板上之黏合表面的距離的變化低於該平面到第二基板黏合表面的大約10%。
- 如申請專利範圍第1項之方法,其中該第一基板:具有第一表面和遠離該第一表面的第二表面;在該第二表面上包括至少一個活性位置和多個地形特 徵;且係選自由微機電系統裝置、顯示器裝置、彈性基板、化合物半導體、低k介電層、介電層、離子佈植層和包括矽、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、亞硝酸鉭、SiGe的基板及前述之混合物所組成之群組。
- 如申請專利範圍第1項之方法,其中該第二基板包括運送晶圓,其包括選自由藍寶石、陶瓷、玻璃、石英、鋁、銀和矽所組成之群組的材料。
- 如申請專利範圍第1項之方法,其中該提供堆疊包括:將黏合組成物施用在第一和第二基板其中之一上以形成黏合組成物-塗佈的基板,和不含黏合組成物的基板;及使該不含黏合組成物的基板與經塗佈黏合組成物之基板接觸,以便將基板黏合在一起。
- 如申請專利範圍第13項之方法,其中該塗佈包括將黏合組成物旋塗在第一和第二基板其中之一上。
- 如申請專利範圍第13項之方法,其中該接觸包括施加壓力在該基板上。
- 一種物件,包括:第一基板,具有背面和活性表面,該活性表面包括至少一個活性位置和多個地形特徵;第二基板,其具有黏合表面;以及熱塑性黏合層,其與該活性表面和該黏合表面黏合,其中: 該地形特徵存在於遠離該第一基板的背面之個自端點表面,且至少一個端點表面比其它端點表面離第一基板之背面更遠,該另外的端點表面界定了一實質上與該第一表面平行之平面;且至少一個該接端表面比其他接端表面離該第一基板的背面更遠,該較遠的接端表面定義一平面,其實質上與該第一表面平行;且從該平面到在該第二基板上之黏合表面的距離的變化為低於沿著該平面到第二基板黏合表面的大約5%。
- 如申請專利範圍第16項之物件,其中該黏合層:具有定義成從活性表面到黏合表面之距離的厚度;及於該厚度上包括相同的組成物。
- 如申請專利範圍第16項之物件,其中該黏合層是由包括溶解或分散於溶劑系統中之聚合物的組成物形成。
- 如申請專利範圍第18項之物件,其中該聚合物為至少大約95%可溶於非極性溶劑中。
- 如申請專利範圍第18項之物件,其中該組成物更包括選自由增黏劑、助黏劑、抗氧化劑、表面活性劑及前述之混合物所組成之群組的成分。
- 如申請專利範圍第16項之物件,其中該第一基板係選自由微機電系統裝置、顯示器裝置、彈性基板、化合物半導體、低k介電層、介電層、離子佈植層和包括矽、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、亞硝酸鉭、SiGe的基板及前述之混合物所組成之群組。
- 如申請專利範圍第16項之物件,其中該第二基板包括選自由藍寶石、陶瓷、玻璃、石英、鋁、銀和矽所組成之群組的材料。
- 如申請專利範圍第16項之物件,其中該黏合層具有至少大約190℃的軟化溫度。
- 一種組成物,其包括溶解或分散於溶劑系統中之聚合物和聚(蒎烯),該聚合物含有包括環-烯烴的重複單體。
- 如申請專利範圍第24項之組成物,其中以將該組成物之總重量視為100重量%為基礎,該組成物包括從大約5重量%到大約50重量%的該聚合物,以及從大約50重量%到大約95重量%的該蒎烯。
- 如申請專利範圍第24項之組成物,其中該蒎烯係選自由α-蒎烯和β-蒎烯所組成之群組。
- 如申請專利範圍第24項之組成物,其中該溶劑系統包括檸檬烯,且該組成物更包括助黏劑。
- 一種可流動的黏合組成物,其包括增黏劑和含有包括環-烯烴之重複單體的聚合物,該增黏劑和聚合物被分散或溶解於溶劑系統中,以將該組成物之總重量視為100重量%為基礎,該組成物包括至少大約30重量%的溶劑系統。
- 如申請專利範圍第28項之組成物,其中該增黏劑為碳氫化合物樹脂。
- 如申請專利範圍第28項之組成物,其中該溶劑系統包括選自由檸檬烯、均三甲苯、二甲苯、十二烯、丙二醇單甲基醚、甲基異戊基酮、乙醯乙酸乙酯及其混合物所組 成之群組的溶劑。
- 如申請專利範圍第28項之組成物,其中該組成物更包括選自由抗氧化劑、表面活性劑、助黏劑及其混合物所組成之群組的成分。
- 如申請專利範圍第31項之組成物,其中該成分包括抗氧化劑,且該抗氧化劑係選自由酚系抗氧化劑和亞磷酸酯類抗氧化劑所組成之群組。
- 如申請專利範圍第28項之組成物,其中該組成物基本上不含發泡劑和起泡劑。
- 如申請專利範圍第28項之組成物,其中該組成物基本上不含交聯劑。
- 如申請專利範圍第28項之組成物,其中該組成物具有低於大約35MU之Mooney黏度。
- 如申請專利範圍第28項之組成物,其中該組成物在250℃下具有低於大約1,000泊之黏度。
- 一種可流動的黏合組成物,其包括:增黏劑;和化合物,其選自由橡膠、苯乙烯-異戊二烯-苯乙烯、苯乙烯-丁二烯-苯乙烯、鹵化丁基橡膠及其混合物所組成之群組,該增黏劑和化合物被分散或溶解於溶劑系統中,以將該組成物之總重量視為100重量%為基礎,該組成物包括至少大約30重量%的溶劑系統。
- 如申請專利範圍第37項之組成物,其中該組成物更 包括含有包括環-烯烴之重複單體的聚合物。
- 如申請專利範圍第37項之組成物,其中該化合物為選自由乙烯-丙烯三元共聚物、三元乙丙橡膠及其混合物所組成之群組的橡膠。
- 如申請專利範圍第37項之組成物,其中該增黏劑為碳氫化合物樹脂。
- 如申請專利範圍第37項之組成物,其中該溶劑系統包括選自由檸檬烯、均三甲苯、二甲苯、十二烯、丙二醇單甲基醚、甲基異戊基酮、乙醯乙酸乙酯及其混合物所組成之群組的溶劑。
- 如申請專利範圍第37項之組成物,其中該組成物更包括選自由抗氧化劑、表面活性劑、助黏劑及其混合物所組成之群組的成分。
- 如申請專利範圍第42項之組成物,其中該成分包括抗氧化劑,且該抗氧化劑係選自由酚系抗氧化劑和亞磷酸酯類抗氧化劑所組成之群組。
- 如申請專利範圍第37項之組成物,其中該組成物基本上不含發泡劑和起泡劑。
- 如申請專利範圍第37項之組成物,其中該組成物基本上不含交聯劑。
- 如申請專利範圍第37項之組成物,其中該組成物具有低於大約35MU之Mooney黏度。
- 如申請專利範圍第37項之組成物,其中該組成物在250℃下具有低於大約1,000泊之黏度。
- 如申請專利範圍第1項之晶圓黏合方法,其中該黏合組成物更包括含有包括環-烯烴之重複單體的聚合物。
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CN102167875A (zh) | 2011-08-31 |
EP2078306B1 (en) | 2019-06-05 |
US20080200011A1 (en) | 2008-08-21 |
EP2078306A1 (en) | 2009-07-15 |
SG175589A1 (en) | 2011-11-28 |
KR20090064467A (ko) | 2009-06-18 |
US20100206479A1 (en) | 2010-08-19 |
US9728439B2 (en) | 2017-08-08 |
EP2078306A4 (en) | 2012-11-07 |
JP5656405B2 (ja) | 2015-01-21 |
CN102167875B (zh) | 2013-08-07 |
CN101523566B (zh) | 2011-10-05 |
TW200834795A (en) | 2008-08-16 |
WO2008045669A1 (en) | 2008-04-17 |
KR101477307B1 (ko) | 2014-12-29 |
JP2010506406A (ja) | 2010-02-25 |
CN101523566A (zh) | 2009-09-02 |
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