JP2012533158A5 - - Google Patents
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- JP2012533158A5 JP2012533158A5 JP2012519729A JP2012519729A JP2012533158A5 JP 2012533158 A5 JP2012533158 A5 JP 2012533158A5 JP 2012519729 A JP2012519729 A JP 2012519729A JP 2012519729 A JP2012519729 A JP 2012519729A JP 2012533158 A5 JP2012533158 A5 JP 2012533158A5
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- Prior art keywords
- nanostructures
- surface area
- hybrid conductor
- combinations
- conductive material
- Prior art date
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- 239000004020 conductor Substances 0.000 claims 22
- 239000002086 nanomaterial Substances 0.000 claims 22
- 229910052802 copper Inorganic materials 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 3
- 229910052582 BN Inorganic materials 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N N#B Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 150000002823 nitrates Chemical class 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 238000004804 winding Methods 0.000 claims 2
- 150000003842 bromide salts Chemical class 0.000 claims 1
- 150000003841 chloride salts Chemical class 0.000 claims 1
- 150000004673 fluoride salts Chemical class 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 239000002470 thermal conductor Substances 0.000 claims 1
Claims (20)
- それぞれ表面積を有する複数のナノ構造体と、
前記複数のナノ構造体によって規定された幾何学的プロファイルを有する部材と、
前記複数のナノ構造体の表面積全体より小さい表面積に接触するように配置された導電性材料と、を含むハイブリッド導体であって、
前記導電性材料と前記複数のナノ構造体との組合せによって、導電性を向上させつつ、前記部材の長さに沿って抵抗率を低下させたことを特徴とするハイブリッド導体。 - 前記ナノ構造体は、炭素、銅、銀、ホウ素、窒化ホウ素、またはそれらの組合せのいずれか1つから形成される請求項1に記載のハイブリッド導体。
- 前記複数のナノ構造体は、フッ化物塩、塩化物塩、臭化物塩、ヨウ素酸塩、硝酸塩、硫酸塩またはそれらの組合せのいずれか1つを含む溶液中でドープされて成る請求項1に記載のハイブリッド導体。
- 前記複数のナノ構造体によって規定される前記部材は、糸またはシートのいずれか1つを含む請求項1に記載のハイブリッド導体。
- 前記部材は、複数の糸、複数のシート、またはそれらの組合せのいずれか1つを含む請求項4に記載のハイブリッド導体。
- 前記導電性材料は、前記複数のナノ構造体の前記表面積全体より小さい表面積に接触する導電性被覆、前記複数のナノ構造体の前記表面積全体より小さい表面積に接触する導電性ワイヤ、またはそれらの組合せのいずれか1つを含む請求項1に記載のハイブリッド導体。
- 前記導電性材料は、銅、アルミニウム、チタン、プラチナ、ニッケル、金、銀、またはそれらの組合せのいずれか1つを含む請求項6に記載のハイブリッド導体。
- 請求項1に記載のハイブリッド導体を含む熱導体。
- 請求項1に記載のハイブリッド導体を含む電気モータ用の低渦電流かつ低抵抗の巻線。
- 請求項1に記載のハイブリッド導体を含むソレノイド用の低渦電流かつ低抵抗の巻線。
- フッ化物塩、塩化物塩、臭化物塩、ヨウ素酸塩、硝酸塩、硫酸塩、またはそれらの組合せのいずれか1つを含む溶液中でドープされて成る複数のナノ構造体と、
前記複数のナノ構造体によって規定された幾何学的プロファイルを有する部材と、を含むハイブリッド導体であって、
前記複数のナノ構造体によって、導電性を向上させつつ、前記部材の長手方向に沿って抵抗率を低減させたことを特徴とするハイブリッド導体。 - 前記複数のナノ構造体によって規定される前記部材は、糸またはシートのいずれか1つを含む請求項11に記載のハイブリッド導体。
- 前記部材は、複数の糸、複数のシート、またはそれらの組合せのいずれか1つを含む請求項12に記載のハイブリッド導体。
- それぞれ表面積を有する複数のナノ構造体を提供する工程と、
前記複数のナノ構造体によって規定された幾何学的プロファイルを有する部材を形成する工程と、
前記複数のナノ構造体の表面積全体より小さい表面積に導電性材料を接触させる工程と、を含む方法であって、
前記導電性材料と前記複数のナノ構造体との組合せによって、導電性を向上させつつ、前記部材の長さに沿って抵抗率を低下させたことを特徴とする方法。 - 前記提供する工程において、前記ナノ構造体は、炭素、銅、銀、ホウ素、窒化ホウ素、またはそれらの組合せのいずれか1つから形成される請求項14に記載の方法。
- 前記形成する工程に付随して、フッ化物塩、塩化物塩、臭化物塩、ヨウ素酸塩、硝酸塩、硫酸塩、またはそれらの組合せのいずれか1つを含む溶液中で前記複数のナノ構造体をドープする工程を更に含む請求項14に記載の方法。
- 前記形成する工程において、前記複数のナノ構造体によって規定される前記部材は、糸またはシートのいずれか1つを含む請求項14に記載の方法。
- 前記形成する工程において、前記部材は、複数の糸、複数のシート、またはそれらの組合せのいずれか1つを含む請求項17に記載の方法。
- 前記接触させる工程は、前記部材を導電性部材で被覆して、前記複数のナノ構造体の表面積全体より小さい表面積に接触させること、導電性ワイヤを前記複数のナノ構造体の表面積全体より小さい表面積に撚り合わせること、またはそれらの組合せのいずれか1つを含む請求項14に記載の方法。
- 前記接触させる工程において、前記導電性材料および前記導電性ワイヤは、銅、アルミニウム、チタン、プラチナ、ニッケル、金、銀、またはそれらの組合せのいずれか1つを含む請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22474609P | 2009-07-10 | 2009-07-10 | |
US61/224,746 | 2009-07-10 | ||
PCT/US2010/041374 WO2011005964A1 (en) | 2009-07-10 | 2010-07-08 | Hybrid conductors and method of making same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014216655A Division JP2015057781A (ja) | 2009-07-10 | 2014-10-23 | ハイブリッド導体およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012533158A JP2012533158A (ja) | 2012-12-20 |
JP2012533158A5 true JP2012533158A5 (ja) | 2013-08-01 |
JP5934643B2 JP5934643B2 (ja) | 2016-06-15 |
Family
ID=43426634
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2012519729A Active JP5934643B2 (ja) | 2009-07-10 | 2010-07-08 | ハイブリッド導体およびその製造方法 |
JP2014216655A Pending JP2015057781A (ja) | 2009-07-10 | 2014-10-23 | ハイブリッド導体およびその製造方法 |
Family Applications After (1)
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JP2014216655A Pending JP2015057781A (ja) | 2009-07-10 | 2014-10-23 | ハイブリッド導体およびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8354593B2 (ja) |
EP (1) | EP2451635B1 (ja) |
JP (2) | JP5934643B2 (ja) |
AU (1) | AU2010271429A1 (ja) |
CA (1) | CA2767522A1 (ja) |
ES (1) | ES2749219T3 (ja) |
PL (1) | PL2451635T3 (ja) |
WO (1) | WO2011005964A1 (ja) |
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2009
- 2009-10-16 US US12/580,994 patent/US8354593B2/en active Active
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2010
- 2010-07-08 PL PL10797843T patent/PL2451635T3/pl unknown
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- 2010-07-08 CA CA2767522A patent/CA2767522A1/en not_active Abandoned
- 2010-07-08 EP EP10797843.9A patent/EP2451635B1/en active Active
- 2010-07-08 AU AU2010271429A patent/AU2010271429A1/en not_active Abandoned
- 2010-07-08 WO PCT/US2010/041374 patent/WO2011005964A1/en active Application Filing
- 2010-07-08 JP JP2012519729A patent/JP5934643B2/ja active Active
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