JP2012528488A - 拡散バリアで被覆された基板上の半導体デバイス及びその形成方法 - Google Patents
拡散バリアで被覆された基板上の半導体デバイス及びその形成方法 Download PDFInfo
- Publication number
- JP2012528488A JP2012528488A JP2012513271A JP2012513271A JP2012528488A JP 2012528488 A JP2012528488 A JP 2012528488A JP 2012513271 A JP2012513271 A JP 2012513271A JP 2012513271 A JP2012513271 A JP 2012513271A JP 2012528488 A JP2012528488 A JP 2012528488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion barrier
- metal substrate
- semiconductor layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 166
- 230000004888 barrier function Effects 0.000 title claims abstract description 148
- 238000009792 diffusion process Methods 0.000 title claims abstract description 143
- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 181
- 239000002184 metal Substances 0.000 claims abstract description 181
- 239000002243 precursor Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 26
- 239000010936 titanium Substances 0.000 claims description 24
- 238000007639 printing Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 19
- 238000000231 atomic layer deposition Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 150000003609 titanium compounds Chemical class 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims 2
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 299
- 239000010408 film Substances 0.000 description 42
- 239000000463 material Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 23
- 239000000976 ink Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000011888 foil Substances 0.000 description 17
- 230000008021 deposition Effects 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000010959 steel Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 241000894007 species Species 0.000 description 6
- -1 aluminum compound Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000003791 organic solvent mixture Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 241000588731 Hafnia Species 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000548 poly(silane) polymer Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 239000010963 304 stainless steel Substances 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 241001120493 Arene Species 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 1
- DZZDTRZOOBJSSG-UHFFFAOYSA-N [Ta].[W] Chemical compound [Ta].[W] DZZDTRZOOBJSSG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910000086 alane Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
Abstract
【選択図】図2C
Description
本出願は、2009年5月28日出願の米国仮出願61/181953号明細書(代理人整理番号IDR3021)の優先権を主張するものであり、前記出願の内容は、参照により本明細書に組み込まれる。
図2Aには、ステンレス鋼(いかなるグレードのステンレス鋼であってもよい、例えば、304型、316型等)又は、電気デバイスの製造に関係する典型的な処理温度(例えば、およそ350℃以上の温度、又は、350℃以上であって基板の軟化温度を下回る温度)に十分耐え得る軟化温度を有するその他の好適な元素の金属又は合金の、スラブ、箔、又はシートで構成される金属基板210が示されている。一実施形態において、金属は、304型のステンレス鋼であるが、あらゆるステンレス鋼の合金を使用することができる。これに替えて、金属基板210は、例えば、アルミニウム、銅、チタン又はモリブデンのスラブ、箔又はシートで構成されていてもよい。金属基板210は、約10μmから約1000μm(例えば、10μm〜500μm、50μm〜200μm、又は、上記の範囲に含まれるその他の値及びその他の値の範囲)の厚みを有してもよい。金属基板210は、基本的にいかなる形状を有してもよく、例えば、正方形、円形、長円形、楕円形等であってもよい。これに替えて、金属基板210は、所定の不規則な及び/又はパターン化された形状を有してもよい。ある実施形態では、金属基板210は、正方形又は矩形であってもよく、或いは、正方形又は矩形の単位をx×y個含むシート、又は(例えば、表示装置、太陽電池、IDタグ等の)1つの集積回路に対応する個別の基板を単位としてx個の単位の幅を有するシートの一巻であってもよい。
金属箔基板を使用する際に問題となるのが、金属基板及び/又はバリア層(図4A−4B参照)の相対的に高い反射率である。組成物膜の積層体(例えば、金属箔410、1以上の拡散バリア材420/425及び1以上の絶縁層430を典型的には含む金属−バリア−絶縁体の積層体)の光学定数及び厚みは、デバイスを製造する際に使用される光の波長に応じて、様々な程度で光を吸収及び反射するのに関係し、少なくとも、入射光の角度に関係する。
金属箔の基板を使用した場合に生じ得るもう1つの問題として、多くの場合、応力によって発生する金属基板における粒状の高輝度領域が挙げられる。粒状の高輝度領域は、次に行われる処理工程に影響を与える場合がある。バリア材料の中には、高い固有応力を有するものが存在し、バリア層の積層体及び/又は組成を、この固有応力を考慮に入れて最適化してもよい。
したがって、本発明は、拡散バリア層で被覆された基板上に形成された半導体デバイスを提供する。本発明は、拡散バリア層が形成されている金属基板から金属原子が、金属基板上に形成されている半導体デバイスへと拡散するのを防ぐ。
Claims (49)
- a)金属基板と、
b)前記金属基板上の1以上の拡散バリア層と、
c)前記拡散バリア層上の1以上の絶縁層と、
d)前記1以上の絶縁層上のデバイス層と
を備えるデバイス。 - 前記金属基板が、前記拡散バリア層のうちの少なくとも1つ及び前記絶縁層のうちの少なくとも1つによって封止されている請求項1に記載のデバイス。
- 前記金属基板の少なくとも1つの面が、前記拡散バリア層のうちの少なくとも1つ及び前記絶縁層のうちの少なくとも1つによって被覆されている請求項1に記載のデバイス。
- 前記金属基板は、アルミニウム、銅、チタン、ステンレス鋼又はモリブデンを含む請求項1に記載のデバイス。
- 前記金属基板は、約10μmから約1000μmの厚みを有する請求項1に記載のデバイス。
- 前記拡散バリア層の少なくとも1つは、チタン化合物を含む請求項1に記載のデバイス。
- 前記チタン化合物は、TixNy又はTiaAlbNcを含み、ここで、x+y=1又はa+b+c=1である請求項6に記載のデバイス。
- 前記1以上の拡散バリア層は、約10nmから約1μmの厚みを有する請求項1に記載のデバイス。
- 前記1以上の絶縁層は、酸化シリコン、窒化シリコン、酸化窒化シリコン、酸化アルミニウム、又はこれらの組み合わせを含む請求項1に記載のデバイス。
- 前記1以上の絶縁層は、約100nmから約10μmの厚みを有する請求項9に記載のデバイス。
- 前記デバイス層は、半導体層を含む請求項1に記載のデバイス。
- 前記半導体層は、シリコン及びゲルマニウムの少なくとも一方を含む請求項11に記載のデバイス。
- 前記半導体層は、多結晶シリコン及び多結晶ゲルマニウムの少なくとも一方を含む請求項12に記載のデバイス。
- 前記半導体層は、B、P、As及びSbからなる群から選択されるドーパントを更に含む請求項13に記載のデバイス。
- 前記半導体層上又は下に、ゲート電極を更に備え、
前記ゲート電極は、ゲート及びゲート誘電体層を有する請求項11に記載のデバイス。 - 前記半導体層は、第1導電型の第1ドーパントを有し、
前記デバイスは更に、前記半導体層の上又は上方に、第2半導体層を備え、
前記第2半導体層は、第2導電型の第2ドーパントを有する請求項11に記載のデバイス。 - 前記デバイス層は、第1導電層を有し、
前記第1導電層は、第1金属層及び第1高濃度ドープ半導体層からなる群から選択される請求項1に記載のデバイス。 - 前記第1導電層上の誘電体層と、
前記第1導電層上の第2導電層とを更に備え、
前記第2導電層は、第2金属層及び第2高濃度ドープ半導体層からなる群から選択される請求項17に記載のデバイス。 - 前記金属基板上又は上方に、反射防止層を更に備える請求項1に記載のデバイス。
- 前記デバイス層は、前記反射防止層の上方に位置する請求項19に記載のデバイス。
- 前記金属基板上又は上方に、応力緩和層を更に備える請求項1に記載のデバイス。
- 金属基板上にデバイスを形成する方法であって、
a)前記金属基板上に、1以上の拡散バリア層を形成する工程と、
b)前記拡散バリア層上に、1以上の絶縁層を形成する工程と、
c)前記1以上の絶縁層上に、デバイス層を形成する工程と
を備えるデバイス。 - 前記金属基板が、前記拡散バリア層のうちの少なくとも1つ及び前記絶縁層のうちの少なくとも1つによって封止される請求項22に記載の方法。
- 前記金属基板の少なくとも1つの面が、前記拡散バリア層のうちの少なくとも1つ及び前記絶縁層のうちの少なくとも1つによって被覆される請求項22に記載の方法。
- 前記1以上の拡散バリア層を形成する前に、前記金属基板を洗浄する工程を更に備える請求項22に記載の方法。
- 前記金属基板を洗浄する工程は、前記金属基板をスパッタエッチングする工程を含む請求項25に記載の方法。
- 前記金属基板は、アルミニウム、銅、チタン又はステンレス鋼を含む請求項22に記載の方法。
- 前記金属基板は、約10μmから約1000μmの厚みを有する請求項22に記載の方法。
- 前記1以上の拡散バリア層を形成する工程は、チタン化合物の物理的気相成長、原子層成長又は化学的気相成長を含む請求項22に記載の方法。
- 前記1以上の拡散バリア層を形成する工程は、原子層成長を含む請求項29に記載の方法。
- 前記チタン化合物は、TixNy又はTiaAlbNcを含み、ここで、x+y=1又はa+b+c=1である請求項29に記載の方法。
- 前記xは約0.5であり、前記yは約0.5である請求項31に記載の方法。
- 前記1以上の拡散バリア層は、約10nmから約1μmの厚みを有する請求項22に記載の方法。
- 前記1以上の絶縁層は、酸化シリコン、窒化シリコン、酸化窒化シリコン、酸化アルミニウム、又はこれらの組み合わせを含む請求項22に記載の方法。
- 前記1以上の絶縁層を形成する工程は、前記絶縁層の少なくとも1つを、物理的気相成長法、化学的気相成長法又は原子層成長法によって堆積することを含む請求項34に記載の方法。
- 前記1以上の絶縁層を形成する工程は、絶縁体インク及び絶縁体の前躯体の少なくとも一方を印刷することを含む請求項34に記載の方法。
- 前記1以上の絶縁層は、約100nmから約10μmの厚みを有する請求項34に記載の方法。
- 前記デバイス層は、半導体層を含む請求項22に記載の方法。
- 前記半導体層は、シリコン及びゲルマニウムの少なくとも一方を含む請求項38に記載の方法。
- 前記半導体層は、B、P、As及びSbからなる群から選択されるドーパントを更に含む請求項39に記載の方法。
- 前記半導体層上又は下に、ゲート電極を形成する工程を更に備え、
前記ゲート電極は、ゲート及びゲート誘電体層を有する請求項39に記載の方法。 - 前記半導体層は、第1導電型の第1ドーパントを有し、
前記デバイスは更に、前記半導体層上又は上方に、第2半導体層を備え、
前記第2半導体層は、第2導電型の第2ドーパントを有する請求項39に記載の方法。 - 前記デバイス層は、第1導電層を有し、
前記第1導電層は、第1金属層及び第1高濃度ドープ半導体層からなる群から選択される請求項22に記載の方法。 - 前記第1導電層上の誘電体層と、
前記第1導電層上の第2導電層とを更に備え、
前記第2導電層は、第2金属層及び第2高濃度ドープ半導体層からなる群から選択される請求項43に記載の方法。 - 前記半導体層を少なくとも一部結晶化させるべく、前記半導体を照射する工程を更に備える請求項39に記載の方法。
- 前記金属基板上又は上方に、反射防止層を形成する工程を更に備える請求項22に記載の方法。
- 前記デバイス層は、前記反射防止層の上方に位置する請求項46に記載の方法。
- 前記金属基板上又は上方に、応力緩和層を形成する工程を更に備える請求項22に記載のデバイス。
- 前記応力緩和層は、前記金属基板上に形成され、
前記方法は更に、前記応力緩和層上に反射防止層を形成する段階を更に備え、
前記1以上の拡散バリア層は、前記反射防止層上又は上方に形成される請求項48に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18195309P | 2009-05-28 | 2009-05-28 | |
US61/181,953 | 2009-05-28 | ||
PCT/US2010/036478 WO2010138766A1 (en) | 2009-05-28 | 2010-05-27 | Semiconductor devices on diffusion barrier coated substrates and methods of making the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012528488A true JP2012528488A (ja) | 2012-11-12 |
JP2012528488A5 JP2012528488A5 (ja) | 2013-07-04 |
JP5729707B2 JP5729707B2 (ja) | 2015-06-03 |
Family
ID=43223095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012513271A Active JP5729707B2 (ja) | 2009-05-28 | 2010-05-27 | 拡散バリアで被覆された基板上の半導体デバイス及びその形成方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9299845B2 (ja) |
EP (1) | EP2436037B1 (ja) |
JP (1) | JP5729707B2 (ja) |
KR (1) | KR101716655B1 (ja) |
CN (1) | CN102971849B (ja) |
CA (1) | CA2761748C (ja) |
SG (1) | SG175709A1 (ja) |
TW (1) | TWI576999B (ja) |
WO (1) | WO2010138766A1 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
KR101172147B1 (ko) | 2009-02-23 | 2012-08-07 | 시너스 테크놀리지, 인코포레이티드 | 플라즈마에 의한 라디칼을 이용한 박막 형성 방법 |
SG168450A1 (en) * | 2009-08-05 | 2011-02-28 | Sony Corp | Thin film transistor |
US20120175384A1 (en) * | 2009-09-22 | 2012-07-12 | Medmix Systems Ag | Sealed container comprising a displaceable piston |
US9165971B2 (en) * | 2010-10-25 | 2015-10-20 | California Institute Of Technology | Atomically precise surface engineering for producing imagers |
JP5683245B2 (ja) * | 2010-12-08 | 2015-03-11 | 富士フイルム株式会社 | 撮像素子及び撮像素子の製造方法 |
KR101217820B1 (ko) * | 2011-01-05 | 2013-01-21 | 삼화콘덴서공업주식회사 | 플렉시블 적층형 박막 커패시터를 이용한 임베디드 인쇄회로기판 |
US8877300B2 (en) * | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
US8956944B2 (en) * | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI521600B (zh) * | 2011-06-03 | 2016-02-11 | 應用材料股份有限公司 | 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉 |
US9105779B2 (en) | 2011-09-26 | 2015-08-11 | International Business Machines Corporation | Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer |
US20130106875A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Method of improving thin-film encapsulation for an electromechanical systems assembly |
KR20130056608A (ko) * | 2011-11-22 | 2013-05-30 | 에스케이하이닉스 주식회사 | 상변화 메모리 장치 및 그의 제조방법 |
TWI563111B (en) | 2011-12-16 | 2016-12-21 | Applied Materials Inc | Film deposition using tantalum precursors |
CN103861662B (zh) | 2012-12-13 | 2016-12-21 | 通用电气公司 | 带有氧化铝阻隔层的防结焦催化剂涂层 |
WO2014176409A1 (en) * | 2013-04-24 | 2014-10-30 | Natcore Technology, Inc. | Solar cells with patterned antireflective surfaces |
KR102098573B1 (ko) * | 2013-07-19 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
KR102427696B1 (ko) * | 2015-10-22 | 2022-08-01 | 삼성디스플레이 주식회사 | 터치 패널 |
US9926622B2 (en) | 2015-11-12 | 2018-03-27 | Uchicago Argonne, Llc | Methods for forming pitting resistant carbon coating |
ES2968347T3 (es) | 2016-06-30 | 2024-05-09 | Nec Corp | Método y aparato para la configuración de señales en un sistema de comunicación inalámbrica |
WO2018191708A1 (en) * | 2017-04-13 | 2018-10-18 | Nitride Solutions Inc. | Device for thermal conduction and electrical isolation |
KR101827929B1 (ko) * | 2017-05-15 | 2018-02-09 | 주식회사 벤투스솔루션 | 직물형 염료감응 태양전지의 전극용 직물형 금속기판의 제조방법, 이로부터 제조된 직물형 염료감응 태양전지의 전극용 직물형 금속기판 및 이를 구비한 직물형 염료감응 태양전지 |
US10749004B2 (en) | 2017-06-30 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having a multi-layer diffusion barrier |
US10410928B2 (en) * | 2017-11-28 | 2019-09-10 | International Business Machines Corporation | Homogeneous densification of fill layers for controlled reveal of vertical fins |
EP3768874A4 (en) * | 2018-03-19 | 2022-03-30 | Applied Materials, Inc. | METHODS FOR DEPOSITING COATINGS ON AEROSPACE ELEMENTS |
US20200024735A1 (en) * | 2018-07-18 | 2020-01-23 | Applied Materials, Inc. | Erosion resistant metal fluoride coatings deposited by atomic layer deposition |
WO2020086532A1 (en) | 2018-10-22 | 2020-04-30 | Thin Film Electronics Asa | Barrier stacks for printed and/or thin film electronics methods of manufacturing the same, and method of controlling a threshold voltage of a thin film transistor |
EP3959356A4 (en) | 2019-04-26 | 2023-01-18 | Applied Materials, Inc. | METHODS FOR PROTECTING AEROSPACE ELEMENTS AGAINST CORROSION AND OXIDATION |
CN110098269A (zh) * | 2019-04-29 | 2019-08-06 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池及其制备方法 |
US11088078B2 (en) | 2019-05-22 | 2021-08-10 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
US11735791B2 (en) | 2020-04-10 | 2023-08-22 | Ensurge Micropower Asa | Solid-state battery and method of making the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179778A (ja) * | 1989-05-08 | 1991-08-05 | Ricoh Co Ltd | 薄膜半導体形成用絶縁基板 |
JP2003058078A (ja) * | 2001-06-15 | 2003-02-28 | Lg Electronics Inc | 薄膜トランジスタとそれらを用いた有機elディスプレイ装置及び製造方法 |
JP2004048005A (ja) * | 2002-07-11 | 2004-02-12 | Sharp Corp | 金属薄膜基板上に形成された薄膜トランジスタ |
JP2006114633A (ja) * | 2004-10-13 | 2006-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2007142367A (ja) * | 2005-11-16 | 2007-06-07 | Samsung Sdi Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2007281155A (ja) * | 2006-04-06 | 2007-10-25 | Mitsubishi Electric Corp | 薄膜トランジスタ、及びその製造方法、並びにアクティブマトリクス型表示装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001420A (en) * | 1996-09-23 | 1999-12-14 | Applied Materials, Inc. | Semi-selective chemical vapor deposition |
TW465017B (en) * | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
US20040229412A1 (en) * | 1999-05-10 | 2004-11-18 | Sigurd Wagner | Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film |
TW477079B (en) * | 2001-03-15 | 2002-02-21 | Uni Light Technology Inc | Method to form the semiconductor device having metal substrate |
CN1299360C (zh) * | 2002-03-20 | 2007-02-07 | 皇家飞利浦电子股份有限公司 | 有源矩阵显示装置及其制造 |
US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
JP4614633B2 (ja) * | 2003-04-09 | 2011-01-19 | 株式会社半導体エネルギー研究所 | 電子機器 |
US7879696B2 (en) | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
US7498015B1 (en) | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
US7314513B1 (en) | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
US7485691B1 (en) | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
JP2006173446A (ja) * | 2004-12-17 | 2006-06-29 | Nikon Corp | 極端紫外線用の光学素子及びこれを用いた投影露光装置 |
US7619248B1 (en) | 2005-03-18 | 2009-11-17 | Kovio, Inc. | MOS transistor with self-aligned source and drain, and method for making the same |
KR100729054B1 (ko) * | 2005-11-16 | 2007-06-14 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
US7309637B2 (en) * | 2005-12-12 | 2007-12-18 | Chartered Semiconductor Manufacturing, Ltd | Method to enhance device performance with selective stress relief |
JP5162909B2 (ja) * | 2006-04-03 | 2013-03-13 | 豊田合成株式会社 | 半導体発光素子 |
US7504336B2 (en) * | 2006-05-19 | 2009-03-17 | International Business Machines Corporation | Methods for forming CMOS devices with intrinsically stressed metal silicide layers |
US8796125B2 (en) * | 2006-06-12 | 2014-08-05 | Kovio, Inc. | Printed, self-aligned, top gate thin film transistor |
US7767520B2 (en) * | 2006-08-15 | 2010-08-03 | Kovio, Inc. | Printed dopant layers |
EP1890322A3 (en) * | 2006-08-15 | 2012-02-15 | Kovio, Inc. | Printed dopant layers |
US7701011B2 (en) | 2006-08-15 | 2010-04-20 | Kovio, Inc. | Printed dopant layers |
US7709307B2 (en) | 2006-08-24 | 2010-05-04 | Kovio, Inc. | Printed non-volatile memory |
CA2701412C (en) * | 2007-10-01 | 2017-06-20 | Kovio, Inc. | Profile engineered thin film devices and structures |
US8446706B1 (en) * | 2007-10-10 | 2013-05-21 | Kovio, Inc. | High precision capacitors |
KR20090036698A (ko) * | 2007-10-10 | 2009-04-15 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
EP2308100A1 (en) * | 2008-07-28 | 2011-04-13 | Day4 Energy Inc. | Crystalline silicon pv cell with selective emitter produced with low temperature precision etch back and passivation process |
TWI387417B (zh) * | 2008-08-29 | 2013-02-21 | Ind Tech Res Inst | 電路板結構及其製作方法 |
US20100210060A1 (en) * | 2009-02-13 | 2010-08-19 | Peter Borden | Double anneal process for an improved rapid thermal oxide passivated solar cell |
US20100229928A1 (en) * | 2009-03-12 | 2010-09-16 | Twin Creeks Technologies, Inc. | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
WO2018049192A1 (en) | 2016-09-08 | 2018-03-15 | The Board Of Trustees Of The Leland Stanford Junior University | Steering wheel skin deformation display |
-
2010
- 2010-05-27 CA CA2761748A patent/CA2761748C/en active Active
- 2010-05-27 EP EP10781242.2A patent/EP2436037B1/en active Active
- 2010-05-27 TW TW099116965A patent/TWI576999B/zh not_active IP Right Cessation
- 2010-05-27 JP JP2012513271A patent/JP5729707B2/ja active Active
- 2010-05-27 WO PCT/US2010/036478 patent/WO2010138766A1/en active Application Filing
- 2010-05-27 CN CN201080023017.9A patent/CN102971849B/zh active Active
- 2010-05-27 KR KR1020117025851A patent/KR101716655B1/ko active IP Right Grant
- 2010-05-27 SG SG2011073871A patent/SG175709A1/en unknown
- 2010-05-28 US US12/790,627 patent/US9299845B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179778A (ja) * | 1989-05-08 | 1991-08-05 | Ricoh Co Ltd | 薄膜半導体形成用絶縁基板 |
JP2003058078A (ja) * | 2001-06-15 | 2003-02-28 | Lg Electronics Inc | 薄膜トランジスタとそれらを用いた有機elディスプレイ装置及び製造方法 |
JP2004048005A (ja) * | 2002-07-11 | 2004-02-12 | Sharp Corp | 金属薄膜基板上に形成された薄膜トランジスタ |
JP2006114633A (ja) * | 2004-10-13 | 2006-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2007142367A (ja) * | 2005-11-16 | 2007-06-07 | Samsung Sdi Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2007281155A (ja) * | 2006-04-06 | 2007-10-25 | Mitsubishi Electric Corp | 薄膜トランジスタ、及びその製造方法、並びにアクティブマトリクス型表示装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201117360A (en) | 2011-05-16 |
WO2010138766A1 (en) | 2010-12-02 |
CA2761748A1 (en) | 2010-12-02 |
CN102971849A (zh) | 2013-03-13 |
JP5729707B2 (ja) | 2015-06-03 |
CA2761748C (en) | 2016-01-12 |
KR20120030996A (ko) | 2012-03-29 |
EP2436037B1 (en) | 2020-04-15 |
SG175709A1 (en) | 2011-12-29 |
CN102971849B (zh) | 2017-02-08 |
US9299845B2 (en) | 2016-03-29 |
EP2436037A4 (en) | 2013-10-02 |
US20110017997A1 (en) | 2011-01-27 |
EP2436037A1 (en) | 2012-04-04 |
TWI576999B (zh) | 2017-04-01 |
KR101716655B1 (ko) | 2017-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5729707B2 (ja) | 拡散バリアで被覆された基板上の半導体デバイス及びその形成方法 | |
JP4963021B2 (ja) | 半導体構造 | |
JP6338361B2 (ja) | 半導体物質とそれを含む薄膜トランジスタ及び該薄膜トランジスタを含む電子素子 | |
US10020352B2 (en) | Substrate structure | |
US9183973B2 (en) | Diffusion barrier coated substrates and methods of making the same | |
JP2012528488A5 (ja) | ||
WO2003049147A2 (en) | Integrated circuits including metal oxide and hydrogen barrier layers and their method of fabrication | |
US9666727B2 (en) | Display device | |
JP2013531383A (ja) | 薄膜トランジスタ | |
TW201308609A (zh) | 用以形成薄膜電晶體的方法 | |
TWI387109B (zh) | 薄膜電晶體的製造方法 | |
JP2004349583A (ja) | トランジスタの製造方法 | |
CN1364313A (zh) | 制造超晶格材料的快速递变退火方法 | |
TW201442238A (zh) | 金屬氧化物薄膜電晶體及其製作方法 | |
CN1236987A (zh) | 制造铁电集成电路的方法 | |
KR101748787B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
KR100265846B1 (ko) | 반도체소자의강유전체캐패시터제조방법 | |
KR101827514B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
US20190088758A1 (en) | Thin film transistor including high-dielectric insulating thin film and method of fabricating the same | |
US7329548B2 (en) | Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor | |
JP7115610B1 (ja) | 薄膜トランジスタ、および、薄膜トランジスタの製造方法 | |
US20230006070A1 (en) | Semiconductor Substrate Manufacturing Method and Semiconductor Substrate | |
JP2018110151A (ja) | 電界効果型トランジスタの製造方法 | |
KR20210070110A (ko) | 전극 형성 방법 | |
KR20150142397A (ko) | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 디스플레이 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130517 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140422 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140717 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150303 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150320 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150320 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150331 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5729707 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |