JP2012525713A5 - - Google Patents

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JP2012525713A5
JP2012525713A5 JP2012508596A JP2012508596A JP2012525713A5 JP 2012525713 A5 JP2012525713 A5 JP 2012525713A5 JP 2012508596 A JP2012508596 A JP 2012508596A JP 2012508596 A JP2012508596 A JP 2012508596A JP 2012525713 A5 JP2012525713 A5 JP 2012525713A5
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layer
iii
group
substrates
chamber
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JP2012525713A (ja
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Priority claimed from US12/751,692 external-priority patent/US8183132B2/en
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JP2012508596A 2009-04-28 2010-04-27 Ｌｅｄ向けのクラスタツール Pending JP2012525713A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US17353609P 2009-04-28 2009-04-28
US61/173,536 2009-04-28
US17709809P 2009-05-11 2009-05-11
US61/177,098 2009-05-11
US23087709P 2009-08-03 2009-08-03
US61/230,877 2009-08-03
US12/751,692 US8183132B2 (en) 2009-04-10 2010-03-31 Methods for fabricating group III nitride structures with a cluster tool
US12/751,692 2010-03-31
PCT/US2010/032597 WO2010129292A2 (en) 2009-04-28 2010-04-27 Cluster tool for leds

Publications (2)

Publication Number Publication Date
JP2012525713A JP2012525713A (ja) 2012-10-22
JP2012525713A5 true JP2012525713A5 (cg-RX-API-DMAC7.html) 2013-06-20

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JP2012508596A Pending JP2012525713A (ja) 2009-04-28 2010-04-27 Ｌｅｄ向けのクラスタツール

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US (1) US8183132B2 (cg-RX-API-DMAC7.html)
EP (1) EP2425463A2 (cg-RX-API-DMAC7.html)
JP (1) JP2012525713A (cg-RX-API-DMAC7.html)
KR (1) KR20120003495A (cg-RX-API-DMAC7.html)
CN (1) CN102414844B (cg-RX-API-DMAC7.html)
TW (1) TW201106502A (cg-RX-API-DMAC7.html)
WO (1) WO2010129292A2 (cg-RX-API-DMAC7.html)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2215282B1 (en) 2007-10-11 2016-11-30 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US8293013B2 (en) * 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
US8080466B2 (en) * 2009-08-10 2011-12-20 Applied Materials, Inc. Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20110244663A1 (en) * 2010-04-01 2011-10-06 Applied Materials, Inc. Forming a compound-nitride structure that includes a nucleation layer
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
TW201213595A (en) * 2010-09-29 2012-04-01 Hon Hai Prec Ind Co Ltd Coating device
KR20120070881A (ko) * 2010-12-22 2012-07-02 삼성엘이디 주식회사 발광 다이오드 제조방법
KR101684859B1 (ko) * 2011-01-05 2016-12-09 삼성전자주식회사 발광 다이오드 제조방법 및 이에 의하여 제조된 발광 다이오드
US20120315741A1 (en) * 2011-06-13 2012-12-13 Jie Su Enhanced magnesium incorporation into gallium nitride films through high pressure or ald-type processing
US20130023079A1 (en) * 2011-07-20 2013-01-24 Sang Won Kang Fabrication of light emitting diodes (leds) using a degas process
KR101271247B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101271246B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101271248B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
CN103132140A (zh) * 2011-11-23 2013-06-05 甘志银 氢化物气相外延装置
CN104737268A (zh) 2012-01-12 2015-06-24 第一太阳能有限公司 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统
US8676375B2 (en) * 2012-02-27 2014-03-18 Veeco Instruments Inc. Automated cassette-to-cassette substrate handling system
CN102615068B (zh) * 2012-03-26 2015-05-20 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法
KR101419705B1 (ko) * 2012-08-24 2014-07-15 주식회사 선익시스템 예비 챔버가 구비된 박막 증착장치
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System
KR20140074516A (ko) * 2012-12-10 2014-06-18 서울바이오시스 주식회사 질화갈륨계 반도체층 성장 방법 및 발광 소자 제조 방법
US9312344B2 (en) 2013-03-13 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming semiconductor materials in STI trenches
KR101445673B1 (ko) * 2013-04-30 2014-10-01 주식회사 이엔에프테크놀로지 반도체 결정 성장 장치 및 방법
US9252024B2 (en) 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
US9520466B2 (en) 2015-03-16 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical gate-all-around field effect transistors and methods of forming same
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR102511483B1 (ko) 2017-02-10 2023-03-17 어플라이드 머티어리얼스, 인코포레이티드 딥 트렌치에서의 저온 선택적 에피택시를 위한 방법 및 장치
US11015247B2 (en) 2017-12-08 2021-05-25 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
CN109585517A (zh) * 2018-12-13 2019-04-05 顾琼 一种用于制备透明显示屏格栅的设备及其生产工艺
CN111342345B (zh) * 2018-12-18 2021-05-07 山东华光光电子股份有限公司 一种GaAs基量子点激光器的制备方法
WO2022192460A1 (en) 2021-03-11 2022-09-15 Applied Materials, Inc. Systems and methods for fabrication of micro-led displays
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3063867A (en) * 1958-12-16 1962-11-13 Western Electric Co Deposition and measurement of layer thickness
US4851295A (en) 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
USD329839S (en) * 1990-01-31 1992-09-29 Hohner Automation Societe Anonyme Incremental coder
WO1992022084A1 (en) 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5647911A (en) 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5359788A (en) * 1993-12-22 1994-11-01 Gell Jr Harold A Coffee roaster
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JPH09501612A (ja) 1994-04-08 1997-02-18 マーク エー． レイ， 選択的プラズマ成長
GB9411911D0 (en) 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5715361A (en) 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5636320A (en) * 1995-05-26 1997-06-03 International Business Machines Corporation Sealed chamber with heating lamps provided within transparent tubes
JPH0945670A (ja) * 1995-07-29 1997-02-14 Hewlett Packard Co <Hp> Ｉｉｉ族−ｎ系結晶の気相エッチング方法および再成長方法
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
JPH09295890A (ja) * 1996-04-26 1997-11-18 Mitsubishi Chem Corp 半導体製造装置および半導体製造方法
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6373114B1 (en) * 1998-10-23 2002-04-16 Micron Technology, Inc. Barrier in gate stack for improved gate dielectric integrity
KR100304664B1 (ko) * 1999-02-05 2001-09-26 윤종용 ＧａＮ막 제조 방법
US6309465B1 (en) 1999-02-18 2001-10-30 Aixtron Ag. CVD reactor
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6540838B2 (en) * 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
EP1879213B1 (en) * 1999-05-26 2012-03-14 Tokyo Electron Limited Plasma processing apparatus
US6206972B1 (en) 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6569765B1 (en) * 1999-08-26 2003-05-27 Cbl Technologies, Inc Hybrid deposition system and methods
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6897119B1 (en) * 1999-12-22 2005-05-24 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
JP4778655B2 (ja) * 2000-02-04 2011-09-21 アイクストロン、アーゲー １つまたは多くの被膜を基板に沈積する方法および装置
US6517634B2 (en) * 2000-02-28 2003-02-11 Applied Materials, Inc. Chemical vapor deposition chamber lid assembly
JP4849705B2 (ja) 2000-03-24 2012-01-11 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成導入部材及び誘電体
US6451713B1 (en) * 2000-04-17 2002-09-17 Mattson Technology, Inc. UV pretreatment process for ultra-thin oxynitride formation
US6616870B1 (en) * 2000-08-07 2003-09-09 Shipley Company, L.L.C. Method of producing high aspect ratio domes by vapor deposition
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10048759A1 (de) * 2000-09-29 2002-04-11 Aixtron Gmbh Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
DE10057134A1 (de) * 2000-11-17 2002-05-23 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens
US6905547B1 (en) * 2000-12-21 2005-06-14 Genus, Inc. Method and apparatus for flexible atomic layer deposition
US7348042B2 (en) * 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
JP2004525518A (ja) * 2001-03-30 2004-08-19 テクノロジーズ アンド デバイス インターナショナル インコーポレイテッド Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置
DE10118130A1 (de) * 2001-04-11 2002-10-17 Aixtron Ag Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase
DE10124609B4 (de) * 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten
AU2002366856A1 (en) * 2001-12-21 2003-07-09 Aixtron Ag Method for depositing iii-v semiconductor layers on a non-iii-v substrate
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자
DE10232731A1 (de) * 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
JP4352783B2 (ja) 2002-08-23 2009-10-28 東京エレクトロン株式会社 ガス供給系及び処理システム
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US7018940B2 (en) * 2002-12-30 2006-03-28 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP4026529B2 (ja) * 2003-04-10 2007-12-26 東京エレクトロン株式会社 シャワーヘッド構造及び処理装置
CN101068950A (zh) * 2003-05-30 2007-11-07 阿维扎技术公司 气体分配系统
DE102004009130A1 (de) * 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
DE102004058521A1 (de) * 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
KR100578089B1 (ko) 2004-12-22 2006-05-10 주식회사 시스넥스 수소화물기상증착 반응기
US20060162661A1 (en) * 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
TW201443990A (zh) * 2005-03-10 2014-11-16 Univ California 用於生長平坦半極性的氮化鎵之技術
US7195934B2 (en) * 2005-07-11 2007-03-27 Applied Materials, Inc. Method and system for deposition tuning in an epitaxial film growth apparatus
JP4594820B2 (ja) 2005-08-03 2010-12-08 古河機械金属株式会社 ハイドライド気相成長装置、ｉｉｉ族窒化物半導体基板の製造方法
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US7364991B2 (en) * 2006-04-27 2008-04-29 Applied Materials, Inc. Buffer-layer treatment of MOCVD-grown nitride structures
US7459380B2 (en) * 2006-05-05 2008-12-02 Applied Materials, Inc. Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7585769B2 (en) * 2006-05-05 2009-09-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US20080050889A1 (en) * 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
JP2008066490A (ja) 2006-09-06 2008-03-21 Nippon Emc Ltd 気相成長装置
JP2008235758A (ja) * 2007-03-23 2008-10-02 Sumitomo Chemical Co Ltd 化合物半導体エピタキシャル基板の製造方法
KR20100075597A (ko) * 2007-10-04 2010-07-02 어플라이드 머티어리얼스, 인코포레이티드 금속­유기 화학기상증착 및 하이드라이드 기상 에피택시를 이용한 ⅲ­ⅴ 질화물 필름의 성장 중에 기생형 입자의 형성을 억제하는 방법
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US8465587B2 (en) * 2009-12-30 2013-06-18 Cbl Technologies, Inc. Modern hydride vapor-phase epitaxy system and methods

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