CN105803425B - 金属有机化合物气相沉积反应装置的反应基座 - Google Patents

金属有机化合物气相沉积反应装置的反应基座 Download PDF

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CN105803425B
CN105803425B CN201610320424.5A CN201610320424A CN105803425B CN 105803425 B CN105803425 B CN 105803425B CN 201610320424 A CN201610320424 A CN 201610320424A CN 105803425 B CN105803425 B CN 105803425B
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CN105803425A (zh
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刘双韬
赵德刚
陈平
朱建军
刘宗顺
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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Abstract

一种金属有机化合物气相沉积反应装置的反应基座，包括：一圆盘状的反应基座，该反应基座上开有三个圆形凹槽，该圆形凹槽边缘为圆弧过渡结构，该反应基座中心处存在一个圆弧脊形过渡结构，使得反应基座表面中心处高于其他部分，该反应基座的材料为镀有一层碳化硅的石墨。本发明可以提高MOCVD沉积薄膜的质量，提高外延薄膜的均匀性。

Description

金属有机化合物气相沉积反应装置的反应基座
技术领域
本发明涉及半导体薄膜沉积设备，尤其涉及一种金属有机化合物气相沉积反应装置的反应基座。
背景技术
众所周知，金属有机物化学气相沉积(MOCVD，Metal-Organic Chemical VaporDeposition)已广泛应用于制备各种外延薄膜。MOCVD已成为了当今世界制备化合物半导体薄膜的一项关键技术，它通过气体输运系统将金属有机源和其它反应物有序的带入到反应室中进行反应，从而生长出不同性质和功能晶体薄膜。在MOCVD反应室中，由于加热器对反应基座的加热，反应基座表面可以获得非常高的生长温度，使得金属有机源和其它反应物在到达反应基座表面时能够有效分解和反应，从而达到薄膜沉积的效果；MOCVD具有沉积速度快，沉积材料种类多，薄膜质量优良的特点，因此被广泛用来沉积各种薄膜材料，广泛应用于微电子和光电子器件。
现有的MOCVD反应装置的反应基座包括：
参阅图1，其中1为反应基座，反应基座1为圆盘状，该反应基座1上表面开有三个圆形凹槽2，用于固定反应生长所需的衬底，反应生长时，衬底置于圆形凹槽2内，除圆形凹槽外，整个反应基座表面各处高度一致。
反应生长时，金属有机源和其它反应物通过载气输运到达反应基座表面，喷淋头的作用使得金属有机源在反应基座表面各处能够有比较好的均匀性；反应物到达反应基座表面后，反应基座表面的高温促使金属有机源分解和其它反应物发生反应，形成对膜生长和生成副产品有用的前驱物，前驱物通过输运和扩散到达衬底生长表面，并吸附在生长表面，然后扩散到成膜点成膜，完成膜的生长。
然而，现有的MOCVD反应装置由于反应基座和生长衬底材料性能的不同，导致反应基座表面温场和流场的均匀性都受到一定的限制。由于反应基座的材料与反应衬底材料导热性的差异，导致反应基座和衬底表面存在一定的温度差异性，温度的差异一方面会导致反应基座和衬底表面热浮力的不同，另一方面会影响表面化学反应进行的速度，而热浮力不同会影响流场的均匀性，使得外延薄膜的均匀性无法得到保证，同时由于其温度差异性带来的反应速度不同以及不同材料表面其沉积速度的差异性，会造成衬底表面和反应基座表面形成一定的浓度差；在表面反应的边界层内，由于流体流动速度比较慢，反应物的传输基本依靠浓度梯度差进行扩散，衬底边缘和基座的浓度差会使得反应物在衬底和基座间发生互扩散，互扩散会使得衬底各部分材料生长的不均匀。
综上使用这种平板型MOCVD生长出来的薄膜，由于衬底和反应基座表面的互扩散，衬底各处生长的薄膜无法获得很高的均匀性，为了获得高均匀性的外延材料，有必要对现有的MOCVD的反应基座进行改进。
发明内容
本发明的目的在于提供一种金属有机化合物气相沉积反应装置的反应基座，以提高MOCVD沉积薄膜的质量，提高外延薄膜的均匀性。
本发明提出一种金属有机化合物气相沉积反应装置的反应基座，包括：一圆盘状的反应基座，该反应基座上开有三个圆形凹槽，该圆形凹槽边缘为圆弧过渡结构，该反应基座中心处存在一个圆弧脊形过渡结构，使得反应基座表面中心处高于其他部分，该反应基座的材料为镀有一层碳化硅的石墨。
本发明的有益效果是，可以提高MOCVD沉积薄膜的质量，提高外延薄膜的均匀性。
附图说明
为进一步说明本发明的技术内容，以下结合实施例及附图详细说明如后，其中：
图1为现有技术的结构示意图；
图2为本发明的结构示意图。
图3为本发明结构表面俯视图。
具体实施方式
请参阅图2所示，本发明提供一种金属有机化合物气相沉积反应装置的反应基座，包括：
一圆盘状的反应基座1，该反应基座1上开有三个圆形凹槽2，该圆形凹槽2周围边缘上表面为圆弧过渡结构3，使得反应基座1表面圆形凹槽2处呈一个圆弧形过渡结构，该反应基座1中心处存在一个圆弧脊形过渡结构4(请参阅图3)，使得反应基座表面中心处高于其它部分。
其中反应基座1的材料为镀有一层碳化硅的石墨。
衬底旁圆弧过渡结构3如图2所示，衬底边缘反应基座1均采用圆弧过渡结构，使得反应基座1的厚度稍高于衬底，反应基座1厚度的提高，可以减少由于衬底材料与反应基座1由于导热性差带来的表面的温度差，从而减少两者之间的热浮力差，保持整个流场的稳定性，同时温度差的减少使得两者表面反应速度差变小，使得其反应物浓度差变小，并且由于基座稍高于衬底表面，从衬底到反应基座1的扩散难度增大，这样的结构可以减少反应基座1与衬底的互扩散，从而增加衬底表面材料生长的均匀性。
中间圆弧过渡结构4如图2所示，以反应基座1中心为最高点，呈弧线向四周递减，在反应基座中心区域，由于反应基座做绕中心轴的旋转运动，反应基座1中心轴处流体流动速度相对其他区域会变得很慢，甚至有一部分流体会在这个区域滞留，造成该区域反应源的浪费，并影响中心边缘的流体均匀性，这样的结构设计可以加快中心区域反应物流动的速度，使得流体在中心区域基座上的滞留时间降低，从而增加反应气体的利用率。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (2)

1.一种金属有机化合物气相沉积反应装置的反应基座，包括：
一圆盘状的反应基座，该反应基座上开有三个圆形凹槽，该圆形凹槽边缘为圆弧过渡结构，该反应基座中心处存在一个圆弧脊形过渡结构，使得反应基座表面中心处高于其他部分；
该圆弧脊形过渡结构，以反应基座中心为最高点，呈弧线向四周递减。
2.根据权利要求1所述的金属有机化合物气相沉积反应装置的反应基座，其中反应基座的材料为镀有一层碳化硅的石墨。
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CN109666922B (zh) * 2018-11-23 2021-04-27 华灿光电（浙江）有限公司 一种石墨基座
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CN203768457U (zh) * 2014-04-02 2014-08-13 广东德力光电有限公司 一种提升外延片质量的石墨盘
CN204874729U (zh) * 2015-07-27 2015-12-16 美尔森先进石墨（昆山）有限公司 Mocvd设备中的石墨盘
CN205046194U (zh) * 2015-09-30 2016-02-24 安徽三安光电有限公司 一种外延生长用石墨盘

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JP5707766B2 (ja) * 2010-07-28 2015-04-30 住友電気工業株式会社 サセプタおよび半導体製造装置

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CN204874729U (zh) * 2015-07-27 2015-12-16 美尔森先进石墨（昆山）有限公司 Mocvd设备中的石墨盘
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