RU2018105878A - Выращивание эпитаксиального 3c-sic на монокристаллическом кремнии - Google Patents

Выращивание эпитаксиального 3c-sic на монокристаллическом кремнии Download PDF

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RU2018105878A
RU2018105878A RU2018105878A RU2018105878A RU2018105878A RU 2018105878 A RU2018105878 A RU 2018105878A RU 2018105878 A RU2018105878 A RU 2018105878A RU 2018105878 A RU2018105878 A RU 2018105878A RU 2018105878 A RU2018105878 A RU 2018105878A
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precursor
substrate
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reactor
silicon
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Максим МИРОНОВ
Джерард КОЛСТОН
Стефен РИД
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Дзе Юниверсити Оф Уорик
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Claims (42)

1. Способ выращивания эпитаксиального 3C-SiC на монокристаллическом кремнии, причем способ включает
предоставление монокристаллической кремниевой подложки (2) в реакторе (7) химического осаждения из газовой фазы с холодными стенками;
нагревание подложки до температуры, равной или большей, чем 700°C и равной или меньшей, чем 1200°C;
введение газовой смеси (33) в реактор, тогда как подложка находится при данной температуре, причем газовая смесь содержит прекурсор (16) источника кремния, прекурсор (18) источника углерода и несущий газ (20), таким образом, чтобы осадить эпитаксиальный слой (4) 3C-SiC на монокристаллический кремний.
2. Способ по п.1, причем прекурсор (18) источника углерода содержит кремнийорганическое соединение.
3. Способ по п.1 или 2, причем прекурсор (18) источника углерода содержит содержащий метил силан.
4. Способ по п.3, причем прекурсор (18) источника углерода содержит триметилсилан.
5. Способ по любому из предыдущих пунктов, причем расход прекурсора (18) источника углерода составляет, по меньшей мере, 1 см3/мин.
6. Способ по любому из предыдущих пунктов, причем расход прекурсора (18) источника углерода составляет, по меньшей мере, 10 см3/мин.
7. Способ по любому из предыдущих пунктов, причем прекурсор (16) источника кремния содержит силан или содержащий хлорин силан.
8. Способ по п.7, причем прекурсор (16) источника кремния содержит дихлорсилан.
9. Способ по любому из предыдущих пунктов, причем прекурсор (16) источника кремния содержит два или более различных компонентов прекурсора.
10. Способ по любому из предыдущих пунктов, причем расход прекурсора (16) источника кремния составляет, по меньшей мере, 1 см3/мин.
11. Способ по любому из предыдущих пунктов, причем расход прекурсора (16) источника кремния составляет, по меньшей мере, 10 см3/мин.
12. Способ по любому из предыдущих пунктов, причем отношение расхода прекурсора (18) источника углерода и прекурсора (16) источника кремния меньше, чем 1,2 и больше, чем 0,8.
13. Способ по любому из предыдущих пунктов, причем расходы прекурсора (18) источника углерода и прекурсора (16) источника кремния одинаковые.
14. Способ по любому из предыдущих пунктов, причем температура, T, равна или больше, чем 1100°C.
15. Способ по любому из пп.1-14, причем давление в реакторе (7) во время осаждения равно или больше, чем 66,7 Па (0,5 торр) и равно или меньше, чем 26,7 кПа (200 торр).
16. Способ по любому из пп.1-14, причем давление в реакторе (7) во время осаждения равно или больше, чем 13,3 кПа (100 торр).
17. Способ по любому из предыдущих пунктов, причем монокристаллический кремний имеет (001) ориентацию поверхности.
18. Способ по любому из предыдущих пунктов, причем монокристаллическая кремниевая подложка (2) имеет плоскую поверхность (3).
19. Способ по любому из предыдущих пунктов, причем монокристаллическая кремниевая подложка (2) содержит монокристаллическую кремниевую пластину.
20. Способ по любому из предыдущих пунктов, причем газовая смесь исключает газ хлористый водород (HCl).
21. Гетероструктура, содержащая
подложку, имеющую монокристаллическую кремниевую поверхность; и
слой эпитаксиального 3C-SiC, расположенный на монокристаллической кремниевой поверхности, имеющей толщину, по меньшей мере, 500 нм.
22. Полупроводниковое устройство, содержащее
гетероструктуру по п.21.
23. Система химического осаждения из газовой фазы для выращивания эпитаксиального 3C-SiC на подложке, имеющей поверхность из монокристаллического кремния, содержащая:
реактор (7) с холодными стенками, помещающий в себе опору (10) для поддержания подложки;
подачу (15) прекурсора (16) источника кремния;
подачу (17) прекурсора (18) источника углерода;
подачу (23) несущего газа (24);
ряд контроллеров (33, 34, 37) массового расхода, причем каждый контроллер массового расхода находится в выбираемой флюидной связи с соответствующей подачей;
манифольд (39) для приема газа от контроллеров массового расхода и подачи газовой смеси (41) на реактор;
нагреватель(-и) (9) для нагрева подложки;
температурный датчик (12) для измерения температуры подложки;
датчик (50) давления для измерения давления в реакторе;
вакуумный насос (45), находящийся в выбираемой флюидной связи с реактором;
система (13, 33, 34, 37, 51, 53) управления, сконфигурированная таким образом, что, когда подложка предоставляется в реакторе для осаждения эпитаксиального слоя 3C-SiC на поверхности монокристаллической кремниевой подложки, подложка находится при температуре, равной или большей, чем 700°C и равной или меньшей, чем 1200°C.
24. Система химического осаждения из газовой фазы по п.23, которая пригодна для обработки подложки в форме пластины, имеющей диаметр, по меньшей мере, 100 мм.
25. Система химического осаждения из газовой фазы по п.24, причем диаметр составляет, по меньшей мере, 200 мм или, по меньшей мере, 450 мм.
RU2018105878A 2015-07-23 2016-07-22 ВЫРАЩИВАНИЕ ЭПИТАКСИАЛЬНОГО 3C-SiC НА МОНОКРИСТАЛЛИЧЕСКОМ КРЕМНИИ RU2764040C2 (ru)

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GBGB1517167.1A GB201517167D0 (en) 2015-09-29 2015-09-29 Growing epitaxial 3C-SiC on single -crystal silicon
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