JP2012525710A - スピントルクの切換を補助する層を有する、スピントルクの切換を持つ磁気積層体 - Google Patents
スピントルクの切換を補助する層を有する、スピントルクの切換を持つ磁気積層体 Download PDFInfo
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- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H01—ELECTRIC ELEMENTS
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
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- H—ELECTRICITY
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
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Abstract
Description
広がるコンピュータおよび携帯/通信産業の急速な成長は、高容量の不揮発性ソリッドステートデータ記憶素子および回転磁気データ記憶素子に対する爆発的な需要を生み出している。フラッシュメモリのような現在の技術は、遅いアクセス速度、制限された耐久性、集積化の難しさといったような、いくつかの欠点を有する。フラッシュメモリ(NANDまたはNOR)は、また、スケーリング問題に直面する。また、従来の回転記憶素子は、面密度における試み、および、読出/書込ヘッドのような構成要素をより小さくかつより信頼性あるものにすることにおける試みに直面する。
本開示は、スピントルクメモリセルまたは磁気トンネル接合セルのような磁気セルに関し、磁気セルは関連する強磁性層の磁気異方性および磁気配向を有し、強磁性層はウェハ平面に垂直または「平面外」に位置合せされる。セルはアシスト層を含む。
本開示は、添付の図面と関連して、この開示のさまざまな実施の形態の以下に続く詳細な説明を考慮することでより完全に理解され得る。
この開示は、磁気積層体またはセル(たとえばスピントルクメモリ(STRAM)セル)に向けられ、磁気積層体またはセルは、スピン電流駆動アシスト層を含む多層アシスト積層体を含む垂直異方性を有する。いくつかの実施の形態において、スピン電流駆動アシスト層は、一般に「平面内」であり、スピン電流によって容易に「平面外」に切換わる。別の実施の形態において、スピン電流駆動アシスト層は、一般に「平面外」であるが、それはスピン電流によって容易に反対の方向へと切換わるためである。
平面外異方性の場合、第1項(Hk)および第2項(−4πSS)の両方が積層体の熱安定性に貢献する。消磁場は、さらに熱エネルギバリア層を低減し、また必要なスイッチング電流を低減することができる。少なくともこれらの理由によって、平面外異方性を有する磁気積層体は、熱安定性を通じた、スピン電流のより高い効率を有する。
Claims (20)
- 磁気セルであって、
各々が平面外磁気異方性と平面外磁気配向とを有し、スピントルクによって切換え可能な、強磁性の自由層と、第1の強磁性のピン留めされた参照層と、
前記自由層と前記参照層との間の第1の酸化物バリア層と、
前記自由層に近接した、約500Oe未満の低い磁気異方性を有する強磁性のアシスト層とを備える、磁気セル。 - 前記アシスト層は、平面内磁気異方性を有する、請求項1に記載の磁気セル。
- 前記アシスト層は、平面外磁気異方性を有する、請求項1に記載の磁気セル。
- 前記アシスト層は、Co、Ni、Feうちの少なくとも1つ、またはそれらの合金を備える、請求項1に記載の磁気セル。
- 前記アシスト層は、約1000emu/cc未満の磁気モーメントを有する、請求項1に記載の磁気セル。
- 平面外磁気異方性と平面外磁気配向とを有する第2のピン留めされた参照層をさらに備え、
前記アシスト層は前記自由層と前記第2の参照層との間にある、請求項1に記載の磁気セル。 - 第1の強化層と第2の強化層とをさらに備え、前記第1の強化層は前記酸化物バリア層と前記自由層との間にあり、前記第2の強化層は、前記酸化物バリア層と前記第1の参照層との間に位置する、請求項6に記載の磁気セル。
- 前記第2の参照層に近接する第3の強化層をさらに備える、請求項7に記載の磁気セル。
- 前記アシスト層と前記第3の強化層との間の第2の酸化物バリア層をさらに備える、請求項8に記載の磁気セル。
- 前記アシスト層と前記自由層との間の導電性の非強磁性スペーサ層を備える、請求項6に記載の磁気セル。
- 前記アシスト層と前記自由層との間の電気的絶縁性のスペーサ層を備える、請求項6に記載の磁気セル。
- 前記磁気セルを通して電流を流すことにより、前記アシスト層の前記磁気配向は、平面内から少なくとも10°である、請求項6に記載の磁気セル。
- 前記磁気セルは、磁気トンネル接合メモリセルである、請求項6に記載の磁気セル。
- 基板上の磁気メモリセルであって、前記メモリセルは、
前記基板に対して垂直の、平面外磁気異方性および平面外磁気配向を有し、スピントルクによって切換え可能な、強磁性の自由層と、
前記基板に対して垂直の、平面外磁気異方性および平面外磁気配向を有する、第1の強磁性のピン留めされた参照層と、
前記自由層と前記第1の参照層との間の酸化物バリア層と、
低い磁気異方性を有する、前記自由層に近接した強磁性アシスト積層体とを備え、前記アシスト積層体は、約1000emu/cc未満の磁気モーメントと電流からの電子の流れの方向に回転する磁気配向とを有するアシスト層を備える、磁気メモリセル。 - 前記アシスト層は、平面内磁気異方性を有する、請求項14に記載のメモリセル。
- 前記アシスト層の前記磁気配向は、平面内から少なくとも10°である、請求項15に記載のメモリセル。
- 前記アシスト層は、約500Oe未満の低い磁気異方性を有する、請求項14に記載のメモリセル。
- 磁気セルに書込む方法であって、
自由層と参照層とを有する磁気セルに電流を通すステップを備え、前記自由層と前記参照層との各々は平面外異方性および磁気配向を有し、前記電流は電子の流れの方向を有し、
前記電子の流れの方向に、前記自由層に近接するアシスト層の磁気配向を回転させるステップをさらに備え、前記アシスト層は約500Oe未満の磁気異方性を有し、さらに、
前記自由層の前記磁気配向を、前記電子の流れの方向に配向させるステップを備える、方法。 - 平面外異方性および磁気配向を有する第2の参照層に電流を通すステップをさらに備える、請求項18に記載の方法。
- アシスト層の磁気配向を回転させるステップは、前記磁気配向を、平面内から少なくとも10°回転させるステップを備える、請求項18に記載の方法。
Applications Claiming Priority (3)
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US12/431,162 US7936598B2 (en) | 2009-04-28 | 2009-04-28 | Magnetic stack having assist layer |
US12/431,162 | 2009-04-28 | ||
PCT/US2010/032483 WO2010126854A1 (en) | 2009-04-28 | 2010-04-27 | Magnetic stack with spin torque switching having a layer assisting said switching |
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JP2012525710A true JP2012525710A (ja) | 2012-10-22 |
JP2012525710A5 JP2012525710A5 (ja) | 2013-03-07 |
JP5623507B2 JP5623507B2 (ja) | 2014-11-12 |
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US (3) | US7936598B2 (ja) |
JP (1) | JP5623507B2 (ja) |
KR (1) | KR101405854B1 (ja) |
CN (1) | CN102414756B (ja) |
WO (1) | WO2010126854A1 (ja) |
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Also Published As
Publication number | Publication date |
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US20110058412A1 (en) | 2011-03-10 |
US7936598B2 (en) | 2011-05-03 |
CN102414756A (zh) | 2012-04-11 |
US8416620B2 (en) | 2013-04-09 |
US20100271870A1 (en) | 2010-10-28 |
CN102414756B (zh) | 2015-07-22 |
WO2010126854A1 (en) | 2010-11-04 |
US20130228884A1 (en) | 2013-09-05 |
US8670271B2 (en) | 2014-03-11 |
KR101405854B1 (ko) | 2014-06-12 |
KR20120025489A (ko) | 2012-03-15 |
JP5623507B2 (ja) | 2014-11-12 |
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