CN102414756A - 具有辅助层的磁性叠层 - Google Patents

具有辅助层的磁性叠层 Download PDF

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CN102414756A
CN102414756A CN2010800192891A CN201080019289A CN102414756A CN 102414756 A CN102414756 A CN 102414756A CN 2010800192891 A CN2010800192891 A CN 2010800192891A CN 201080019289 A CN201080019289 A CN 201080019289A CN 102414756 A CN102414756 A CN 102414756A
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CN102414756B (zh
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Y·郑
习海文
丁元俊
X·冯
X·娄
Z·高
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    • H—ELECTRICITY
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Abstract

一种磁性存储器单元，它具有铁磁自由层和铁磁被钉扎参考层，每个层具有平面外的磁各向异性和平面外的磁化方向并可经由自旋力矩切换。该单元包括接近自由层的铁磁辅助层，该辅助层具有小于约500Oe的低磁各向异性。该辅助层可具有平面内或平面外各向异性。

Description

具有辅助层的磁性叠层
背景
普及性计算和手持/通信产业的快速发展引起对大容量非易失性固态数据存储设备和旋转磁性数据存储设备的爆炸式需求。类似闪存的当前技术具有若干缺点，例如低存取速度、有限的寿命、和集成难度。闪存(NAND或NOR)还面对缩放问题。同时，传统旋转存储面对面密度以及使类似读取/记录头的组件更小和更可靠的挑战。
电阻感测存储器(RSM)通过将数据位存储为高电阻状态或低电阻状态，是未来非易失性和通用存储器的有前途候选。一种这样的存储器是磁性随机存取存储器(MRAM)，它的特征在于非易失性、快速写入/读取速度、几乎无限制的编程寿命和零待机功率。MRAM的基本组件是磁性隧穿结(MTJ)。MRAM通过使用电流感生磁场来切换MTJ的磁化，从而切换MTJ电阻。随着MTJ尺寸缩小，切换磁场振幅增大且切换变化变得更剧烈。
然而，在这样的磁性存储器叠层能够可靠地用作存储器器件或场传感器之前，必须克服许多产量限制因素。因此，具有减小的切换电流和增加的热稳定性的磁性存储器叠层是所期望的。
发明内容
本公开涉及磁性单元，例如自旋力矩存储器单元或磁性隧道结单元，这些单元具有与晶片平面垂直对准的或“平面外的”关联铁磁层的磁各向异性和磁化方向。这些单元包括辅助层。
本公开的一个特定实施例是具有铁磁自由层和铁磁被钉扎参考层的磁性单元，每个层具有平面外磁各向异性和平面外磁化方向并可经由自旋力矩切换。该单元包括铁磁辅助层，其具有不大于约500Oe的低磁各向异性。该辅助层可具有平面内或平面外各向异性。
本公开的另一特定实施例是衬底上的磁性存储器单元。存储器单元具有铁磁自由层，该铁磁自由层具有垂直于衬底的平面外磁各向异性和平面外磁化方向，并可经由自旋力矩切换。该单元还具有第一铁磁被钉扎参考层，该第一铁磁被钉扎参考层具有垂直于衬底的平面外磁各向异性和平面外磁化方向，以及自由层和第一参考层之间的氧化物阻挡层。还包括具有低磁各向异性的接近自由层的铁磁辅助叠层，该辅助叠层包括辅助层，该辅助层具有小于约1000emu/cc的磁矩和在来自电流的电子流方向上旋转的磁化方向。
本公开的另一特定实施例是一种写入磁性单元的方法。该方法包括使电流通过磁性单元，该磁性单元包括自由层和参考层，每个层具有平面外各向异性和磁化方向，并且电流具有电子流方向。该方法包括在电子流方向上旋转接近自由层的辅助层的磁化方向，该辅助层具有不大于约500Oe的磁各向异性。这导致自由层的磁化方向在电子流方向上取向。
通过阅读下面的详细描述，这些以及各种其它的特征和优点将会显而易见。
附图简述
考虑以下联系附图对本公开的各种实施例的详细描述，能更完整地理解本公开，在附图中：
图1A是具有平面外磁化方向和辅助层的磁性单元的示意侧视图；图1B是磁性单元的替换实施例的示意侧视图；图1C是磁性单元的另一替换实施例的示意侧视图；
图2是包括存储器单元和半导体晶体管的示例性存储器组件的示意图；
图3是具有平面外磁化方向和辅助层的磁性单元的另一实施例的示意侧视图；以及
图4A是具有辅助层的磁性单元的示意侧视图，该叠层处于高电阻状态；以及图4B是处于低电阻状态的磁性单元的示意侧视图。
这些附图不一定按比例示出。附图中使用的相同数字表示相同部件。然而，将理解在给定附图中使用数字来指代部件不旨在限制另一附图中用同一数字标记的部件。
详细描述
本公开针对具有垂直各向异性的磁性叠层或单元(如自旋力矩存储器(STRAM)单元)，它们包括多层辅助叠层，其中包括自旋电流驱动的辅助层。在一些实施例中，自旋电流驱动的辅助层一般是“平面内”的，并且易于经由自旋电流切换到“平面外”。在其它实施例中，自旋电流驱动的辅助层一般是“平面外”的，因为它易于经由自旋电流切换到相反方向。
本公开针对具有磁各向异性的磁性存储器单元的各种设计，这些设计导致关联铁磁层的磁化方向垂直于晶片平面地对准，或处于“平面外”。这些存储器单元具有结构性要素，这些结构性要素减小了切换单元的数据位状态所需的切换电流，同时维持充足的热稳定性。该存储其单元可以高的面密度图案化在晶片上。
在以下描述中，参照形成本说明书一部分的一组附图，其中通过图示示出了若干特定实施例。应当理解的是，可构想并可作出其他实施例，而不背离本公开的范围或精神。因此，以下详细描述不应按照限定的意义来理解。本文中所提供的任何定义用于便于对本文中频繁使用的某些术语的理解，而不是为了限制本公开的范围。
除非另外指明，否则在说明书和权利要求书中使用的表示特征大小、量、以及物理性质的所有数字应被理解为在任何情况下均由术语“约”修饰。因此，除非相反地指明，否则在上述说明书和所附权利要求中陈述的数值参数是近似值，这些近似值可利用本文中公开的教导根据本领域技术人员所寻求获得的期望性质而变化。
如本说明书以及所附权利要求书中所使用的，单数形式“一”、“一个”以及“该”涵盖具有复数引用物的实施例，除非该内容明确地指示并非如此。如本说明书以及所附权利要求书中所使用的，术语“或”一般以包括“和/或”的意义来使用，除非该内容明确地指出并非如此。”
要注意，诸如“顶”、“底”、“上方”、“下方”等的术语可在本公开中使用。这些术语不应当解释为限制结构的位置或方向，而是应当用于提供结构之间的空间关系。
虽然本发明不仅限于此，但通过对下文提供的示例的讨论将获得对本公开的各个方面的理解。
图1A、1B和1C示出具有垂直或平面外磁性方向的磁性叠层。在一些实施例中，磁性叠层是磁性存储器单元，并可称为磁性隧道结单元(MTJ)、可变电阻性存储器单元、可变电阻存储器单元、或电阻感测存储器(RSM)单元等等。图1A示出存储器单元10A，图1B示出存储器单元10B，以及图1C示出存储器单元10C。
磁性存储器单元10A、10B和10C具有相对较软的铁磁自由层12、铁磁参考(例如被固定或被钉扎)层14，每个层具有平面外各向异性和磁化方向。铁磁自由层12和铁磁参考层14由氧化物阻挡层13分离，在一些实施例中氧化物阻挡层称为隧道阻挡层等等。
图1A和1B示出诸如硅晶片的衬底11上的磁性单元10A、10B。在图1A的存储器单元10A中，参考层14比自由层12更接近衬底11。在图1B的存储器单元10B中，自由层12比参考层14更接近衬底11。
返回所有图1A、1B和1C，自由层12和参考层14各自具有磁各向异性和相关联的磁化方向。层12、14的各向异性和磁化方向垂直于层延伸地取向并垂直于在其上形成有存储器单元10A、10B、10C的晶片衬底11的平面，这通常称为“平面外”或“垂直”。自由层12的磁化方向比参考层14的磁化方向更易切换，参考层14的磁化方向是固定的并且一般非常低且不会切换。在一些实施例中，接近铁磁参考层14的是反铁磁(AFM)钉扎层，它通过与钉扎层的反铁磁次序材料交换偏磁来钉扎参考层14的磁化方向。合适的钉扎材料的示例包括PtMn、IrMn等等。在替换实施例中，其它机制或要素可用于钉扎参考层14的磁化方向。
铁磁层12、14可由具有垂直或平面外各向异性的任何有用的铁磁(FM)材料制成。为了提供垂直磁各向异性，存在这些铁磁材料和其它材料的许多配置，包括：(1)单层铁磁材料(FM)；(2)铁磁/非金属(FM/NM)多层；(3)FM/FM多层、(4)具有特殊晶相和纹理的铁磁合金；以及(5)重稀土过渡性金属合金。FM/NM多层的一个特例是Co/Pt多层。FM/FM多层的一个示例是Co/Ni多层。具有特定晶相和纹理的铁磁合金的一个示例是具有六方紧密堆积(hcp)晶体结构和垂直于膜平面的c轴(易磁化轴)的CoPtx合金。另一示例是具有L10结构和垂直于膜平面的c轴的FePt。相同L10FePt可以FePt多层形式制成，例如Cr/Pt/FePt。重稀土过渡性金属合金的示例包括TbCoFe和GdCoFe。其它可用材料的示例包括DyFeCo和SmFeCo。在一些实施例中，层12、14具有约1-10nm的厚度。
阻挡层13可由例如氧化物材料(例如，Al2O3、TiOx或MgOx)的电绝缘材料来制成。可取决于工艺可行性与设备可靠性用自由层12或用参考层14可任选地图案化阻挡层13。在一些实施例中，阻挡层13具有约0.5-1.5nm的厚度。
在图1C的实施例中，存储器单元10C包括存在于阻挡层13的至少一侧上的增强层15，在该实施例中增强层15存在于阻挡层的每一侧上，位于阻挡层13和自由层12之间以及位于阻挡层13和参考层14之间。增强层15与自由层12和/或参考层14牢固地耦合，由此增加单元10C的磁阻(TMR)并增加通过单元10C的自旋极化。对于诸如图1A的存储器单元10A和图1B的存储器单元10B的实施例，其中参考层14具有充足的自旋极化和磁阻特性，增强层不存在。
如果存在，增强层15可以是具有可接受的自旋极化范围(如大于约0.5)的任何铁磁材料。合适材料的示例包括Fe、Co和/或Ni的合金，如NiFe、CoFe和CoFeB。在一些实施例中，增强层15具有约
Figure BPA00001449302300051
(即0.5-3nm)的厚度。
对于具有平面内各向异性的铁磁材料(如Fe、Co和/或Ni的合金)用于增强层15的实施例，增强层15的磁化方向从“平面外”或“垂直”倾斜通常不大于约25°，例如约5-20°。增强层15的磁化方向大体上位于与自由层12或参考层14的磁化方向相同的方向，虽然由于平面内各向异性而稍微倾斜。
对于根据本公开的包括磁性存储器单元的磁性叠层，包括具有低各向异性(如约500Oe)的自旋电流驱动的或自旋极化的辅助层。各向异性可为平面内或平面外。辅助层便于自由层的磁化方向的切换。在图1A、1B和1C的每一个中，接近自由层12(在某些实施例中没有中间层地邻接于自由层12)的辅助层17便于自由层12的磁化方向的切换。具体而言，来自辅助层17的磁化方向的磁场便于自由层12的磁化方向的切换。
与自由层12、参考层14和可任选的增强层15不同，辅助层17具有非常弱的各向异性(例如不大于约700Oe，在一些实施例中，不大于约500Oe，或者甚至于不大于约400Oe)，这导致易于切换的磁化方向。辅助层17耦合至或较弱地耦合至自由层12。图1A、1B和1C各自示出具有中性的、平面内磁化方向的辅助层17。通过磁性单元10A、10B、10C施加电流创建自旋力矩，并影响辅助层17的磁化方向，这转而影响自由层12的磁化方向。
辅助磁性层17可以是具有可接受的各向异性(如不大于约700Oe或500Oe或400Oe)的任何铁磁材料，包括但不限于Co、Ni、Fe等的合金。优选的是，辅助层17包括具有低磁矩(Ms)的材料，例如Ms≤1100emu/cc，在一些实施例中，Ms≤1000emu/cc，或者甚至于Ms≤950emu/cc。在一些实施例中，辅助层17具有约
Figure BPA00001449302300061
(即0.5-3nm)的厚度。
第一电极16和第二电极与自由层12和参考层14电接触。对于图1A的存储器单元10A和图1C的存储器单元10C，电极16接近(且在一些实施例中邻接)参考层14，而对于图1B的存储器单元10B，电极16接近(且在一些实施例中邻接)辅助层17。对于图1A的存储器单元10A和图1C的存储器单元10C，电极18接近(且在一些实施例中邻接)辅助层17，而对于图1B的存储器单元10B，电极18接近(且在一些实施例中邻接)参考层14。电极16、18将单元10A、10B、10C电连接至提供通过层12、14的读写电流的控制电路。磁性存储器单元10A、10B、10C两端的电阻根据铁磁层12、14的磁化向量或磁化方向的相对方向来确定。
所有存储器单元10A、10B、10C显示为自由层12具有未定义的磁化方向。自由层12的磁化方向具有两个稳定的相反状态，两者均垂直于其上形成有存储器单元10A、10B、10C的衬底。当自由层12的磁化方向与参考层14的磁化方向处于同一方向时，磁性存储器单元处于低电阻状态。相反，当自由层12的磁化方向与参考层14的磁化方向处于相反方向时，磁性存储器单元处于高电阻状态。在一些实施例中，低电阻状态是“0”数据状态，高电阻状态是“1”数据状态，而在其它实施例中，低电阻状态是“1”，高电阻状态是“0”。
当通过诸如辅助层17的磁性层的电流变得自旋极化并对自由层12施加自旋力矩时，进行经由自旋转移的磁性存储器单元10A、10B、10C的电阻状态的切换，并由此进行数据状态的切换。当足够的自旋力矩被施加于自由层12时，自由层12的磁化方向可在两个相反方向之间切换，并因此，磁性存储器单元10A、10B、10C可在低电阻状态和高电阻状态之间切换。
图2是示例性存储器组件20的示意图，它包括经由导电元件电耦合到半导体晶体管22的存储器元件21。存储器元件21可以是本文中描述的任何存储器单元，或者可以是配置成经由通过存储器元件21的电流切换数据状态的任何其它存储器单元。晶体管22包括具有掺杂区域(例如，示为n掺杂区域)和在掺杂区域之间的沟道区域(例如，示为p掺杂沟道区域)的半导体衬底25。晶体管22包括电耦合至字线WL的栅极26，以允许选择并且允许电流从位线BL流向存储器元件21。可编程金属化存储器组件20的阵列可利用半导体制造技术用字线和位线在半导体衬底上形成。
对于具有垂直磁各向异性的磁性叠层(例如存储器单元)，如存储器单元10A、10B、10C，在被钉扎的参考层和自由层之间进行比具有平面内磁各向异性的磁性叠层中更牢固的耦合。可任选地包括增强层15进一步增强耦合。较高程度的耦合导致较低的所需切换电流(Ic)。
具有平面内各向异性和磁化的磁性叠层要求形状各向异性以维持其热稳定性。然而，形状各向异性依赖于形状和大小并提出对高容量和高密度存储器的挑战。此外，对于切换电流，平面内磁性叠层具有热稳定性但效率低。用于平面内磁性叠层的切换电流密度为：
I c P → AP = α M s V η ( H k + 2 π M s + H )
其中α是阻尼常数，Ms是饱和磁化，η是自旋电流效率，Hk是平面内各向异性，H是外磁场。
虽然第一项(Hk)对叠层的热稳定性做贡献，而第二项(2πMs)对热能没有贡献，但是第二项对所需切换电流具有较大影响。
具有垂直各向异性的平面外磁性叠层(例如存储器单元10A、10B)的切换电流密度为：
I c P → AP = α M s V η ( H k + 2 π M s + H )
其中Hk是平面外各向异性磁场。
对于平面外各向异性，第一项(Hk)和第二项(-4πMs)两者都对叠层的热稳定性作贡献。去磁化场可进一步减小热能阻挡层，并可减小所需的切换电流。至少基于这些原因，对于自旋电流，具有平面外各向异性的磁性叠层具有热稳定性且效率较高。
图3示出具有平面外各向异性的磁性叠层的实施例，该磁性叠层包括具有弱各向异性的辅助层，该辅助层是辅助叠层的一部分。在一些实施例中，辅助层可以是辅助叠层的唯一层。该磁性叠层的各种要素的特征与图1A、1B和1C的磁性存储器单元10A、10B、10C的要素类似或相同，除非另外指明。
图3的磁性单元300的取向类似于图1B的存储器单元10B，其中自由层比参考层更接近其上形成存储器单元的衬底。然而，不同于磁性单元10B，磁性单元300具有由多层构成的辅助叠层，其中的一层是辅助层。
磁性单元300包括相对较软的铁磁自由层302，第一铁磁参考(如被固定或被钉扎)层304，以及这两者之间的阻挡层303。自由层302和参考层304各自具有平面外磁化方向。阻挡层303的任一侧是增强层305、307，其中第一增强层305接近自由层302，而第二增强层307接近参考层304。磁性单元300包括自旋电流驱动的或自旋极化的辅助叠层311，辅助叠层311通过可任选的间隔层310与自由层302分离。在该实施例中，辅助叠层311由第二铁磁参考(如被固定或被钉扎)层314和第三增强层315构成，第三增强层315通过第二阻挡层313与辅助层317分隔开。在其它实施例中，辅助叠层311可具有不同的层(更多的层或更少的层)，但是包括辅助层317。第一电极306经由辅助叠层311与自由层302电接触，而第二电极308与参考层304电接触。
在一些实施例中，磁性单元300可称为双重单元，具有两个参考层(即参考层304、314)和一个自由层(即自由层302)。双重单元结构具有铁磁自由层，该铁磁自由层具有通过被钉扎的基准层约束在其顶部和底部的可切换垂直磁化方向。对于具有双重单元结构的磁性叠层，由于具有两个被钉扎的参考层，因此切换电流(Ic)低于单个单元结构。由于每个被钉扎的基准层影响到自由层的磁化方向的切换，因此来自第一被钉扎的参考层和第二被钉扎的参考层的自旋力矩是累积的，由此需要较小的总切换电流来切换自由层的磁化方向。
自由层302、阻挡层303、参考层304和增强层305、307的各个特征与图1A、1B、1C的自由层12、阻挡层13、参考层14和增强层15、17的特征相同或类似。类似于图1A、1B和1C的存储器单元10A、10B、10C，自由层302和参考层304具有平面外或垂直各向异性和磁化方向，而增强层305、307具有占主导的平面外或垂直磁化方向。自由层302的磁化方向具有两个稳定的相反状态，两者均垂直于其上形成有磁性单元300的衬底。增强层305、307的磁化方向也具有两个稳定的相反状态，两者均相对于衬底稍微倾斜。接近参考层304的增强层307具有相对于参考层304的磁化方向大体上平行(但稍微倾斜)的磁化方向。比第二增强层307更接近自由层302的增强层305具有基于自由层302的磁化方向切换的磁化方向；该磁化方向可平行于或反平行于增强层307的磁化方向。
辅助叠层311具有参考层314和增强层315，参考层314具有平面外或垂直各向异性和磁化方向，增强层315具有占主导的平面外或垂直磁化方向。作为双重单元结构，参考层314的磁化方向与第一参考层304的磁化方向相反或反平行。增强层315的磁化方向具有两个稳定的相反状态，两者均相对于其上形成有磁性单元300的衬底稍微倾斜。接近参考层314的增强层317具有相对于参考层314的磁化方向大体上平行(但稍微倾斜)的磁化方向。辅助叠层317具有较弱的各向异性，它易于在平面内或平面外切换。
在磁性单元300的特定实施例中，从自由层302分离辅助叠层311的是间隔层310，间隔层310是导电的非铁磁材料(如Ru、Pd或Cr)或者是厚度小于1.5nm的电绝缘体。在一些实施例中，例如，辅助层307和自由层302之间的直接耦合是期望的，间隔层不存在。
包括自旋电流极化辅助层317的辅助叠层311便于自由层302的磁化方向的切换。具体地，来自辅助层317的磁化方向的磁场便于自由层302的磁化方向的切换。
与自由层302，参考层304、314和增强层305、307、315不同，辅助层317具有易于切换的较弱或非常弱的各向异性。各向异性可为平面内或平面外。辅助层317耦合或较弱地耦合至自由层302。图3示出具有中性的平面内磁化方向的辅助层317。通过磁性单元300施加电流可创建自旋力矩，该自旋力矩影响辅助层317的磁化方向，这转而影响自由层302的磁化方向。
参考图4A和4B，示出类似于图3的磁性单元300的磁性叠层。磁性单元400包括相对较软的铁磁自由层402和第一铁磁参考(例如被固定或被钉扎)层404，每个层具有平面外的磁化方向。在自由层402和第一参考层404之间是第一阻挡层403、第一增强层405和第二增强层407。辅助叠层411在与参考层404相反的一侧上接近自由层402，并通过可任选的间隔层410与自由层402分离。辅助叠层411具有第二参考层414、第三增强层415和辅助层417，其中第二阻挡层413位于增强层415和辅助层417之间。在叠层411的各个层中，辅助层417最接近自由层402。第一电极406经由辅助叠层411与自由层402电接触，而第二电极408与第一参考层404电接触。
通过磁性单元400的自旋力矩可取决于电子流方向，容易地将辅助层417的磁化方向改变成向上(即与第二参考层414的磁化方向相同的方向)或向下(即与第一参考层404的磁化方向相同的方向)。在施加任何电流或电子流之前，辅助层417的磁化方向可为平面内或平面外。如果是平面内，则在大部分实施例中，辅助层417的磁化方向将随电子流从平面内向平面外旋转，通常为从平面内旋转至少10°，在一些实施例中，从平面内旋转至少25°。
图4A示出从第二参考层414向上流向第一参考层404的电子，而图4B示出从第一参考层404向下流向第二参考层414的电子。由于辅助层417的低各向异性，当图4A中自旋极化电子从底部流向顶部时，辅助层417的磁化方向随电子旋转。向上取向的辅助层417发射辅助磁场(即静态场、层间耦合场、或两者)。辅助磁场影响自由层的磁化的切换。所得到的结构处于高电阻状态，其中自由层402的磁化方向与第一参考层404的磁化方向为相反方向(即反平行)。当图4B中自旋极化电子从顶部流向底部时，辅助层417的磁化方向随电子旋转。向下取向的辅助层417发射辅助磁场(即静态场、层间耦合场、或两者)，该磁场影响自由层402的磁化的切换。所得到的结构处于低电阻状态，其中自由层402的磁化方向与参考层404的磁化方向为相同方向(即平行)。
因此，为了将低电阻状态写入存储器单元400(图4B)，将从电极406向电极408跨存储器单元400施加电流，使得电子向下流动。相反，为了将高电阻状态写入存储器单元400(图4A)，将从电极408向电极406跨存储器单元400施加电流，使得电子向上流动。
本公开的各种结构可通过薄膜技术制成，例如化学汽相沉积(CVD)、物理汽相沉积(PVD)、溅射沉积以及原子层沉积(ALD)。
由此，揭示了“具有辅助层的磁性叠层”的实施例。上述实现以及其它实现在所附权利要求的范围内。本领域技术人员将理解本公开可用除所公开的实施例之外的实施例来实施。出于说明而非限制目的给出了所公开的实施例，且本发明仅受限于所附权利要求。
在下面权利要求书中使用数字表示，例如“第一”、“第二”等是为了辨认和提供在前基础。除非内容明确表示相反情形，否则不应当认为数字表示意指这一数目的这类要素必需在设备、系统或装置中出现。例如，如果设备包括第一层，这并不意味着该设备中一定就要有第二层。

Claims (20)

1.一种磁性单元，包括：
铁磁自由层和第一铁磁被钉扎参考层，每个层具有平面外的磁各向异性和平面外的磁化方向并可经由自旋力矩切换；
位于所述自由层和所述参考层之间的第一氧化物阻挡层；以及
接近所述自由层的铁磁辅助层，具有小于约500Oe的低磁各向异性。
2.如权利要求1所述的磁性单元，其特征在于，所述辅助层具有平面内的磁各向异性。
3.如权利要求1所述的磁性单元，其特征在于，所述辅助层具有平面外的磁各向异性。
4.如权利要求1所述的磁性单元，其特征在于，所述辅助层包括Co、Ni、Fe或它们的合金中的至少一个。
5.如权利要求1所述的磁性单元，其特征在于，所述辅助层具有小于约1000emu/cc的磁矩。
6.如权利要求1所述的磁性单元，其特征在于，还包括第二被钉扎参考层，具有平面外的磁各向异性和平面外的磁化方向，所述辅助层位于所述自由层和所述第二参考层之间。
7.如权利要求1所述的磁性单元，其特征在于，还包括第一增强层和第二增强层，所述第一增强层位于所述氧化物阻挡层和所述自由层之间，所述第二增强层位于所述氧化物阻挡层和所述第一参考层之间。
8.如权利要求7所述的磁性单元，其特征在于，还包括接近所述第二参考层的第三增强层。
9.如权利要求8所述的磁性单元，其特征在于，还包括位于所述辅助层和所述第三增强层之间的第二氧化物阻挡层。
10.如权利要求6所述的磁性单元，其特征在于，包括位于所述辅助层和所述自由层之间的导电非铁磁间隔层。
11.如权利要求6所述的磁性单元，其特征在于，包括位于所述辅助层和所述自由层之间的电绝缘间隔层。
12.如权利要求6所述的磁性单元，其特征在于，一旦电流通过所述磁性单元，所述辅助层的磁化方向就从平面内旋转至少10°。
13.如权利要求6所述的磁性单元，其特征在于，所述磁性单元是磁性隧道结存储器单元。
14.一种衬底上的磁性存储器单元，所述存储器单元包括：
铁磁自由层，具有垂直于所述衬底的平面外磁各向异性和平面外磁化方向，并可经由自旋力矩切换；
第一铁磁被钉扎参考层，具有垂直于所述衬底的平面外磁各向异性和平面外磁化方向；
位于所述自由层和所述第一参考层之间的氧化物阻挡层；以及
接近所述自由层的具有低磁各向异性的铁磁辅助叠层，所述辅助叠层包括辅助层，所述辅助层具有小于约1000emu/cc的磁矩和在来自电流的电子流方向上旋转的磁化方向。
15.如权利要求14所述的存储器单元，其特征在于，所述辅助层具有平面内的磁各向异性。
16.如权利要求15所述的存储器单元，其特征在于，所述辅助层的磁化方向为从平面内旋转至少10°。
17.如权利要求14所述的存储器单元，其特征在于，所述辅助层具有小于约500Oe的低磁各向异性。
18.一种写入磁性单元的方法，包括：
使电流通过磁性单元，所述磁性单元包括自由层和参考层，每个层具有平面外各向异性和磁化方向，并且电流具有电子流方向；
在电子流方向上旋转接近所述自由层的辅助层的磁化方向，所述辅助层具有小于约500Oe的磁各向异性；以及
使所述自由层的磁化方向在所述电子流方向上取向。
19.如权利要求18所述的方法，其特征在于，还包括：
使所述电流通过第二参考层，所述第二参考层具有平面外各向异性和磁化方向。
20.如权利要求18所述的方法，其特征在于，旋转辅助层的磁化方向包括从平面内旋转所述磁化方向至少10°。
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