CN108604632B - 具有磁性隧道结及热稳定性增强层的存储器单元 - Google Patents
具有磁性隧道结及热稳定性增强层的存储器单元 Download PDFInfo
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- CN108604632B CN108604632B CN201680080416.6A CN201680080416A CN108604632B CN 108604632 B CN108604632 B CN 108604632B CN 201680080416 A CN201680080416 A CN 201680080416A CN 108604632 B CN108604632 B CN 108604632B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310530959.5A CN116367697A (zh) | 2016-01-28 | 2016-12-19 | 具有磁性隧道结及热稳定性增强层的存储器单元 |
Applications Claiming Priority (5)
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US201662287994P | 2016-01-28 | 2016-01-28 | |
US62/287,994 | 2016-01-28 | ||
US15/157,783 US9741926B1 (en) | 2016-01-28 | 2016-05-18 | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
US15/157,783 | 2016-05-18 | ||
PCT/US2016/067444 WO2017131894A1 (en) | 2016-01-28 | 2016-12-19 | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
Related Child Applications (1)
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CN202310530959.5A Division CN116367697A (zh) | 2016-01-28 | 2016-12-19 | 具有磁性隧道结及热稳定性增强层的存储器单元 |
Publications (2)
Publication Number | Publication Date |
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CN108604632A CN108604632A (zh) | 2018-09-28 |
CN108604632B true CN108604632B (zh) | 2023-05-09 |
Family
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CN202310530959.5A Pending CN116367697A (zh) | 2016-01-28 | 2016-12-19 | 具有磁性隧道结及热稳定性增强层的存储器单元 |
CN201680080416.6A Active CN108604632B (zh) | 2016-01-28 | 2016-12-19 | 具有磁性隧道结及热稳定性增强层的存储器单元 |
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CN202310530959.5A Pending CN116367697A (zh) | 2016-01-28 | 2016-12-19 | 具有磁性隧道结及热稳定性增强层的存储器单元 |
Country Status (5)
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US (3) | US9741926B1 (zh) |
JP (1) | JP7105191B2 (zh) |
KR (1) | KR102617167B1 (zh) |
CN (2) | CN116367697A (zh) |
WO (1) | WO2017131894A1 (zh) |
Families Citing this family (96)
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JP7105191B2 (ja) | 2022-07-22 |
US20190006582A1 (en) | 2019-01-03 |
US20170222132A1 (en) | 2017-08-03 |
JP2019506745A (ja) | 2019-03-07 |
US10643680B2 (en) | 2020-05-05 |
US9741926B1 (en) | 2017-08-22 |
US20170324029A1 (en) | 2017-11-09 |
US10381553B2 (en) | 2019-08-13 |
CN116367697A (zh) | 2023-06-30 |
WO2017131894A1 (en) | 2017-08-03 |
KR20180100065A (ko) | 2018-09-06 |
KR102617167B1 (ko) | 2023-12-21 |
CN108604632A (zh) | 2018-09-28 |
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