JP2012524416A5 - - Google Patents

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Publication number
JP2012524416A5
JP2012524416A5 JP2012506201A JP2012506201A JP2012524416A5 JP 2012524416 A5 JP2012524416 A5 JP 2012524416A5 JP 2012506201 A JP2012506201 A JP 2012506201A JP 2012506201 A JP2012506201 A JP 2012506201A JP 2012524416 A5 JP2012524416 A5 JP 2012524416A5
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JP
Japan
Prior art keywords
gas
substrate support
conduit
outlets
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012506201A
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English (en)
Japanese (ja)
Other versions
JP5800800B2 (ja
JP2012524416A (ja
Filing date
Publication date
Priority claimed from US12/759,873 external-priority patent/US8298372B2/en
Application filed filed Critical
Publication of JP2012524416A publication Critical patent/JP2012524416A/ja
Publication of JP2012524416A5 publication Critical patent/JP2012524416A5/ja
Application granted granted Critical
Publication of JP5800800B2 publication Critical patent/JP5800800B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012506201A 2009-04-20 2010-04-15 基板にプロセスガスを供給する基板処理システム及び方法 Active JP5800800B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17086709P 2009-04-20 2009-04-20
US61/170,867 2009-04-20
US12/759,873 US8298372B2 (en) 2009-04-20 2010-04-14 Quartz window having gas feed and processing equipment incorporating same
US12/759,873 2010-04-14
PCT/US2010/031157 WO2010123741A2 (en) 2009-04-20 2010-04-15 Quartz window having gas feed and processing equipment incorporating same

Publications (3)

Publication Number Publication Date
JP2012524416A JP2012524416A (ja) 2012-10-11
JP2012524416A5 true JP2012524416A5 (enExample) 2013-05-30
JP5800800B2 JP5800800B2 (ja) 2015-10-28

Family

ID=42981327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012506201A Active JP5800800B2 (ja) 2009-04-20 2010-04-15 基板にプロセスガスを供給する基板処理システム及び方法

Country Status (7)

Country Link
US (1) US8298372B2 (enExample)
JP (1) JP5800800B2 (enExample)
KR (1) KR101699690B1 (enExample)
CN (1) CN102405515B (enExample)
SG (1) SG175021A1 (enExample)
TW (2) TWI549212B (enExample)
WO (1) WO2010123741A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8986454B2 (en) 2010-06-08 2015-03-24 Applied Materials, Inc. Window assembly for use in substrate processing systems
US9499905B2 (en) 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
CN104471678B (zh) 2012-07-27 2018-06-29 应用材料公司 用于输送工艺气体至基板的方法和设备
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
US10410890B2 (en) * 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US9443728B2 (en) 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
US10184183B2 (en) 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2717786B2 (ja) * 1987-07-07 1998-02-25 財団法人 半導体研究振興会 半導体結晶のエピタキシャル成長法及びその方法に用いる分子層エピタキシー装置
JPS6422033A (en) * 1987-07-17 1989-01-25 Matsushita Electric Industrial Co Ltd Deposition system for thin-film
JPH01183809A (ja) * 1988-01-19 1989-07-21 Babcock Hitachi Kk 光ｃｖｄ装置
JPH01241826A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp 薄膜形成装置
JPH0636409B2 (ja) * 1989-12-28 1994-05-11 大日本スクリーン製造株式会社 光照射型気相処理装置
JPH04188622A (ja) * 1990-11-19 1992-07-07 Kawasaki Steel Corp 半導体装置の製造方法及びその製造装置
JPH0987851A (ja) * 1995-09-21 1997-03-31 Canon Inc マイクロ波プラズマ処理装置及び処理方法
WO1998044175A1 (fr) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Four de croissance epitaxiale
US6099648A (en) 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
WO1999049101A1 (en) 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
JP2000228366A (ja) * 1999-02-08 2000-08-15 Furontekku:Kk 反応ガス使用処理装置
JP2002064104A (ja) * 2000-08-16 2002-02-28 Tokyo Electron Ltd ガス処理装置
JP2002261036A (ja) * 2001-02-28 2002-09-13 Dainippon Screen Mfg Co Ltd 熱処理装置
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
JP4344949B2 (ja) * 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
JP4683334B2 (ja) * 2006-03-31 2011-05-18 株式会社島津製作所 表面波励起プラズマ処理装置
JP4502220B2 (ja) * 2007-02-13 2010-07-14 大日本スクリーン製造株式会社 熱処理装置

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