JPS6422033A - Deposition system for thin-film - Google Patents

Deposition system for thin-film

Info

Publication number
JPS6422033A
JPS6422033A JP17948087A JP17948087A JPS6422033A JP S6422033 A JPS6422033 A JP S6422033A JP 17948087 A JP17948087 A JP 17948087A JP 17948087 A JP17948087 A JP 17948087A JP S6422033 A JPS6422033 A JP S6422033A
Authority
JP
Japan
Prior art keywords
gas
decomposition chamber
gas decomposition
substrate
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17948087A
Other languages
Japanese (ja)
Inventor
Tetsuya Ueda
Kosaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17948087A priority Critical patent/JPS6422033A/en
Publication of JPS6422033A publication Critical patent/JPS6422033A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the efficiency of decomposition of a gas, and to increase the deposition rate of a deposit remarkably by installing a gas decomposition chamber and confining beams in the deposition of a thin-film through a photo- CVD method. CONSTITUTION:Small holes 22 bored to a gas decomposition chamber 20 are directed in the direction of a substrate 35, and two branched nozzles 44 are formed at the nose of a second gas introducing system 43. Small holes 45 are bored at every twenty position at regular intervals toward the direction just under the gas decomposition chamber 20 in the substrate 35 in each nozzle 44, and SiH4 gas is sprayed onto the substrate 35 while being mixed with dissociated O2 gas. A mirror 11b is fixed into an adapter 50 by a ring screw 52a and positioned vertically to a laser tube 10 and the gas decomposition chamber 20, and functions to partition the laser tube 10 and the gas decomposition chamber 20 as well as to comfine beams into one reflecting mirror of a laser and the gas decomposition chamber 20.
JP17948087A 1987-07-17 1987-07-17 Deposition system for thin-film Pending JPS6422033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17948087A JPS6422033A (en) 1987-07-17 1987-07-17 Deposition system for thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17948087A JPS6422033A (en) 1987-07-17 1987-07-17 Deposition system for thin-film

Publications (1)

Publication Number Publication Date
JPS6422033A true JPS6422033A (en) 1989-01-25

Family

ID=16066576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17948087A Pending JPS6422033A (en) 1987-07-17 1987-07-17 Deposition system for thin-film

Country Status (1)

Country Link
JP (1) JPS6422033A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012524416A (en) * 2009-04-20 2012-10-11 アプライド マテリアルズ インコーポレイテッド Quartz window having gas supply mechanism and processing apparatus including the quartz window

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012524416A (en) * 2009-04-20 2012-10-11 アプライド マテリアルズ インコーポレイテッド Quartz window having gas supply mechanism and processing apparatus including the quartz window
TWI549212B (en) * 2009-04-20 2016-09-11 應用材料股份有限公司 Quartz window having gas feed and processing equipment incorporating same

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