TWI549212B - 具有氣體供給之石英窗及包含該石英窗之處理設備 - Google Patents

具有氣體供給之石英窗及包含該石英窗之處理設備 Download PDF

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Publication number
TWI549212B
TWI549212B TW103104943A TW103104943A TWI549212B TW I549212 B TWI549212 B TW I549212B TW 103104943 A TW103104943 A TW 103104943A TW 103104943 A TW103104943 A TW 103104943A TW I549212 B TWI549212 B TW I549212B
Authority
TW
Taiwan
Prior art keywords
substrate
gas
conduit
disposed
outlets
Prior art date
Application number
TW103104943A
Other languages
English (en)
Chinese (zh)
Other versions
TW201421603A (zh
Inventor
金大正
雷普利馬丁
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201421603A publication Critical patent/TW201421603A/zh
Application granted granted Critical
Publication of TWI549212B publication Critical patent/TWI549212B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
TW103104943A 2009-04-20 2010-04-16 具有氣體供給之石英窗及包含該石英窗之處理設備 TWI549212B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17086709P 2009-04-20 2009-04-20
US12/759,873 US8298372B2 (en) 2009-04-20 2010-04-14 Quartz window having gas feed and processing equipment incorporating same

Publications (2)

Publication Number Publication Date
TW201421603A TW201421603A (zh) 2014-06-01
TWI549212B true TWI549212B (zh) 2016-09-11

Family

ID=42981327

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103104943A TWI549212B (zh) 2009-04-20 2010-04-16 具有氣體供給之石英窗及包含該石英窗之處理設備
TW099112049A TWI436442B (zh) 2009-04-20 2010-04-16 具有氣體供給之石英窗及包含該石英窗之處理設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099112049A TWI436442B (zh) 2009-04-20 2010-04-16 具有氣體供給之石英窗及包含該石英窗之處理設備

Country Status (7)

Country Link
US (1) US8298372B2 (enExample)
JP (1) JP5800800B2 (enExample)
KR (1) KR101699690B1 (enExample)
CN (1) CN102405515B (enExample)
SG (1) SG175021A1 (enExample)
TW (2) TWI549212B (enExample)
WO (1) WO2010123741A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8986454B2 (en) 2010-06-08 2015-03-24 Applied Materials, Inc. Window assembly for use in substrate processing systems
US9499905B2 (en) 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
CN104471678B (zh) 2012-07-27 2018-06-29 应用材料公司 用于输送工艺气体至基板的方法和设备
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
US10410890B2 (en) * 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US9443728B2 (en) 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
US10184183B2 (en) 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422033A (en) * 1987-07-17 1989-01-25 Matsushita Electric Industrial Co Ltd Deposition system for thin-film
JP2002064104A (ja) * 2000-08-16 2002-02-28 Tokyo Electron Ltd ガス処理装置
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US20070148349A1 (en) * 2005-12-27 2007-06-28 Seiko Epson Corporation Showerhead, film forming apparatus including showerhead and method for manufacturing ferroelectric film

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2717786B2 (ja) * 1987-07-07 1998-02-25 財団法人 半導体研究振興会 半導体結晶のエピタキシャル成長法及びその方法に用いる分子層エピタキシー装置
JPH01183809A (ja) * 1988-01-19 1989-07-21 Babcock Hitachi Kk 光ｃｖｄ装置
JPH01241826A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp 薄膜形成装置
JPH0636409B2 (ja) * 1989-12-28 1994-05-11 大日本スクリーン製造株式会社 光照射型気相処理装置
JPH04188622A (ja) * 1990-11-19 1992-07-07 Kawasaki Steel Corp 半導体装置の製造方法及びその製造装置
JPH0987851A (ja) * 1995-09-21 1997-03-31 Canon Inc マイクロ波プラズマ処理装置及び処理方法
WO1998044175A1 (fr) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Four de croissance epitaxiale
US6099648A (en) 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
WO1999049101A1 (en) 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
JP2000228366A (ja) * 1999-02-08 2000-08-15 Furontekku:Kk 反応ガス使用処理装置
JP2002261036A (ja) * 2001-02-28 2002-09-13 Dainippon Screen Mfg Co Ltd 熱処理装置
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
JP4683334B2 (ja) * 2006-03-31 2011-05-18 株式会社島津製作所 表面波励起プラズマ処理装置
JP4502220B2 (ja) * 2007-02-13 2010-07-14 大日本スクリーン製造株式会社 熱処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422033A (en) * 1987-07-17 1989-01-25 Matsushita Electric Industrial Co Ltd Deposition system for thin-film
JP2002064104A (ja) * 2000-08-16 2002-02-28 Tokyo Electron Ltd ガス処理装置
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US20070148349A1 (en) * 2005-12-27 2007-06-28 Seiko Epson Corporation Showerhead, film forming apparatus including showerhead and method for manufacturing ferroelectric film

Also Published As

Publication number Publication date
KR20120011878A (ko) 2012-02-08
JP5800800B2 (ja) 2015-10-28
SG175021A1 (en) 2011-11-28
TWI436442B (zh) 2014-05-01
KR101699690B1 (ko) 2017-01-26
WO2010123741A3 (en) 2011-02-17
JP2012524416A (ja) 2012-10-11
TW201421603A (zh) 2014-06-01
CN102405515A (zh) 2012-04-04
TW201039399A (en) 2010-11-01
CN102405515B (zh) 2018-01-26
US20100267249A1 (en) 2010-10-21
US8298372B2 (en) 2012-10-30
WO2010123741A2 (en) 2010-10-28

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