JP2012522362A5 - - Google Patents

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Publication number
JP2012522362A5
JP2012522362A5 JP2012502010A JP2012502010A JP2012522362A5 JP 2012522362 A5 JP2012522362 A5 JP 2012522362A5 JP 2012502010 A JP2012502010 A JP 2012502010A JP 2012502010 A JP2012502010 A JP 2012502010A JP 2012522362 A5 JP2012522362 A5 JP 2012522362A5
Authority
JP
Japan
Prior art keywords
igfet
channel igfet
common
patterning
masking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012502010A
Other languages
English (en)
Japanese (ja)
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JP2012522362A (ja
Filing date
Publication date
Priority claimed from US12/382,966 external-priority patent/US8030151B2/en
Application filed filed Critical
Publication of JP2012522362A publication Critical patent/JP2012522362A/ja
Publication of JP2012522362A5 publication Critical patent/JP2012522362A5/ja
Pending legal-status Critical Current

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JP2012502010A 2009-03-27 2010-03-25 非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造 Pending JP2012522362A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/382,966 2009-03-27
US12/382,966 US8030151B2 (en) 2009-03-27 2009-03-27 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
PCT/US2010/000884 WO2010110891A1 (en) 2009-03-27 2010-03-25 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

Publications (2)

Publication Number Publication Date
JP2012522362A JP2012522362A (ja) 2012-09-20
JP2012522362A5 true JP2012522362A5 (https=) 2013-05-09

Family

ID=42781338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012502010A Pending JP2012522362A (ja) 2009-03-27 2010-03-25 非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造

Country Status (7)

Country Link
US (2) US8030151B2 (https=)
EP (1) EP2412026A4 (https=)
JP (1) JP2012522362A (https=)
KR (1) KR20120003911A (https=)
CN (1) CN102365748A (https=)
TW (1) TW201108413A (https=)
WO (1) WO2010110891A1 (https=)

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US8299532B2 (en) * 2009-08-20 2012-10-30 United Microelectronics Corp. ESD protection device structure
JP5915194B2 (ja) * 2012-01-17 2016-05-11 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8716827B2 (en) 2012-09-11 2014-05-06 Texas Instruments Incorporated Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
US9190501B2 (en) * 2013-02-26 2015-11-17 Broadcom Corporation Semiconductor devices including a lateral bipolar structure with high current gains
US8981490B2 (en) * 2013-03-14 2015-03-17 Texas Instruments Incorporated Transistor with deep Nwell implanted through the gate
US9236453B2 (en) * 2013-09-27 2016-01-12 Ememory Technology Inc. Nonvolatile memory structure and fabrication method thereof
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN106170861B (zh) * 2014-01-16 2018-12-28 理想能量有限公司 对表面电荷敏感性降低的结构和方法
CN105633078B (zh) * 2015-12-23 2018-06-22 成都芯源系统有限公司 双极结型半导体器件及其制造方法
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
EP3358626B1 (en) * 2017-02-02 2022-07-20 Nxp B.V. Method of making a semiconductor switch device
TWI655772B (zh) * 2017-05-05 2019-04-01 旺宏電子股份有限公司 半導體元件
CN108807515B (zh) * 2017-05-05 2022-07-05 联华电子股份有限公司 双极性晶体管
US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
US10037988B1 (en) * 2017-08-24 2018-07-31 Globalfoundries Singapore Pte. Ltd. High voltage PNP using isolation for ESD and method for producing the same
US11288430B2 (en) * 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits
CN108389890B (zh) * 2018-01-12 2022-01-07 矽力杰半导体技术(杭州)有限公司 场效应晶体管及其制造方法
JP2021052150A (ja) * 2019-09-26 2021-04-01 株式会社村田製作所 パワーアンプ単位セル及びパワーアンプモジュール
US11217665B2 (en) * 2020-02-04 2022-01-04 Texas Instruments Incorporated Bipolar junction transistor with constricted collector region having high gain and early voltage product
US11551977B2 (en) * 2021-05-07 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improvement of photoresist patterning profile
US12176346B2 (en) * 2021-10-25 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US20250098190A1 (en) * 2023-09-14 2025-03-20 Globalfoundries U.S. Inc. Bipolar transistors

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