JP2012522362A - 非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造 - Google Patents

非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造 Download PDF

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JP2012522362A
JP2012522362A JP2012502010A JP2012502010A JP2012522362A JP 2012522362 A JP2012522362 A JP 2012522362A JP 2012502010 A JP2012502010 A JP 2012502010A JP 2012502010 A JP2012502010 A JP 2012502010A JP 2012522362 A JP2012522362 A JP 2012522362A
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JP2012522362A5 (https=
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ジャン−ジーウン ヤン，
コンスタンチン ブルシー，
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National Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2012502010A 2009-03-27 2010-03-25 非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造 Pending JP2012522362A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/382,966 2009-03-27
US12/382,966 US8030151B2 (en) 2009-03-27 2009-03-27 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
PCT/US2010/000884 WO2010110891A1 (en) 2009-03-27 2010-03-25 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

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JP2012522362A true JP2012522362A (ja) 2012-09-20
JP2012522362A5 JP2012522362A5 (https=) 2013-05-09

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JP2012502010A Pending JP2012522362A (ja) 2009-03-27 2010-03-25 非単結晶半導体間隔部分がベース・リンク長を制御するバイポーラ接合トランジスタを有する半導体構成体の構成及び製造

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US (2) US8030151B2 (https=)
EP (1) EP2412026A4 (https=)
JP (1) JP2012522362A (https=)
KR (1) KR20120003911A (https=)
CN (1) CN102365748A (https=)
TW (1) TW201108413A (https=)
WO (1) WO2010110891A1 (https=)

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JP5915194B2 (ja) * 2012-01-17 2016-05-11 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8716827B2 (en) 2012-09-11 2014-05-06 Texas Instruments Incorporated Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
US9190501B2 (en) * 2013-02-26 2015-11-17 Broadcom Corporation Semiconductor devices including a lateral bipolar structure with high current gains
US8981490B2 (en) * 2013-03-14 2015-03-17 Texas Instruments Incorporated Transistor with deep Nwell implanted through the gate
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN106170861B (zh) * 2014-01-16 2018-12-28 理想能量有限公司 对表面电荷敏感性降低的结构和方法
CN105633078B (zh) * 2015-12-23 2018-06-22 成都芯源系统有限公司 双极结型半导体器件及其制造方法
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
EP3358626B1 (en) * 2017-02-02 2022-07-20 Nxp B.V. Method of making a semiconductor switch device
TWI655772B (zh) * 2017-05-05 2019-04-01 旺宏電子股份有限公司 半導體元件
CN108807515B (zh) * 2017-05-05 2022-07-05 联华电子股份有限公司 双极性晶体管
US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
US10037988B1 (en) * 2017-08-24 2018-07-31 Globalfoundries Singapore Pte. Ltd. High voltage PNP using isolation for ESD and method for producing the same
US11288430B2 (en) * 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits
CN108389890B (zh) * 2018-01-12 2022-01-07 矽力杰半导体技术(杭州)有限公司 场效应晶体管及其制造方法
JP2021052150A (ja) * 2019-09-26 2021-04-01 株式会社村田製作所 パワーアンプ単位セル及びパワーアンプモジュール
US11217665B2 (en) * 2020-02-04 2022-01-04 Texas Instruments Incorporated Bipolar junction transistor with constricted collector region having high gain and early voltage product
US11551977B2 (en) * 2021-05-07 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improvement of photoresist patterning profile
US12176346B2 (en) * 2021-10-25 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US20250098190A1 (en) * 2023-09-14 2025-03-20 Globalfoundries U.S. Inc. Bipolar transistors

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JPH11238817A (ja) * 1998-02-24 1999-08-31 Rohm Co Ltd 半導体装置およびその製造方法

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JPH11238817A (ja) * 1998-02-24 1999-08-31 Rohm Co Ltd 半導体装置およびその製造方法

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JP2015070266A (ja) * 2013-09-27 2015-04-13 力旺電子股▲ふん▼有限公司 不揮発性メモリセルの形成方法及びその構造

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WO2010110891A1 (en) 2010-09-30
US8030151B2 (en) 2011-10-04
EP2412026A1 (en) 2012-02-01
CN102365748A (zh) 2012-02-29
WO2010110891A8 (en) 2011-08-11
KR20120003911A (ko) 2012-01-11
US20100244143A1 (en) 2010-09-30
EP2412026A4 (en) 2014-03-19
TW201108413A (en) 2011-03-01
US8304308B2 (en) 2012-11-06
US20120181619A1 (en) 2012-07-19

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