TW201108413A - Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length - Google Patents

Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length Download PDF

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Publication number
TW201108413A
TW201108413A TW099108623A TW99108623A TW201108413A TW 201108413 A TW201108413 A TW 201108413A TW 099108623 A TW099108623 A TW 099108623A TW 99108623 A TW99108623 A TW 99108623A TW 201108413 A TW201108413 A TW 201108413A
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TW
Taiwan
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semiconductor
main
type
base
dopant
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TW099108623A
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English (en)
Chinese (zh)
Inventor
Jeng-Jiun Yang
Constantin Bulucea
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Nat Semiconductor Corp
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Publication of TW201108413A publication Critical patent/TW201108413A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW099108623A 2009-03-27 2010-03-24 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length TW201108413A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/382,966 US8030151B2 (en) 2009-03-27 2009-03-27 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

Publications (1)

Publication Number Publication Date
TW201108413A true TW201108413A (en) 2011-03-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099108623A TW201108413A (en) 2009-03-27 2010-03-24 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

Country Status (7)

Country Link
US (2) US8030151B2 (https=)
EP (1) EP2412026A4 (https=)
JP (1) JP2012522362A (https=)
KR (1) KR20120003911A (https=)
CN (1) CN102365748A (https=)
TW (1) TW201108413A (https=)
WO (1) WO2010110891A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655772B (zh) * 2017-05-05 2019-04-01 旺宏電子股份有限公司 半導體元件
US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
TWI656619B (zh) * 2017-08-24 2019-04-11 新加坡商格羅方德半導體私人有限公司 用於ｅｓｄ之使用隔離的高電壓ｐｎｐ及其製造方法
TWI673619B (zh) * 2017-11-27 2019-10-01 美商格芯（美國）集成電路科技有限公司 利用具有模擬電路的系統產生動態空乏電晶體的模型

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8299532B2 (en) * 2009-08-20 2012-10-30 United Microelectronics Corp. ESD protection device structure
JP5915194B2 (ja) * 2012-01-17 2016-05-11 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8716827B2 (en) 2012-09-11 2014-05-06 Texas Instruments Incorporated Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
US9190501B2 (en) * 2013-02-26 2015-11-17 Broadcom Corporation Semiconductor devices including a lateral bipolar structure with high current gains
US8981490B2 (en) * 2013-03-14 2015-03-17 Texas Instruments Incorporated Transistor with deep Nwell implanted through the gate
US9236453B2 (en) * 2013-09-27 2016-01-12 Ememory Technology Inc. Nonvolatile memory structure and fabrication method thereof
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN106170861B (zh) * 2014-01-16 2018-12-28 理想能量有限公司 对表面电荷敏感性降低的结构和方法
CN105633078B (zh) * 2015-12-23 2018-06-22 成都芯源系统有限公司 双极结型半导体器件及其制造方法
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
EP3358626B1 (en) * 2017-02-02 2022-07-20 Nxp B.V. Method of making a semiconductor switch device
CN108807515B (zh) * 2017-05-05 2022-07-05 联华电子股份有限公司 双极性晶体管
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
CN108389890B (zh) * 2018-01-12 2022-01-07 矽力杰半导体技术(杭州)有限公司 场效应晶体管及其制造方法
JP2021052150A (ja) * 2019-09-26 2021-04-01 株式会社村田製作所 パワーアンプ単位セル及びパワーアンプモジュール
US11217665B2 (en) * 2020-02-04 2022-01-04 Texas Instruments Incorporated Bipolar junction transistor with constricted collector region having high gain and early voltage product
US11551977B2 (en) * 2021-05-07 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improvement of photoresist patterning profile
US12176346B2 (en) * 2021-10-25 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US20250098190A1 (en) * 2023-09-14 2025-03-20 Globalfoundries U.S. Inc. Bipolar transistors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226850A (ja) * 1985-07-27 1987-02-04 Nippon Gakki Seizo Kk 集積回路装置の製法
US5023193A (en) * 1986-07-16 1991-06-11 National Semiconductor Corp. Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks
US5011784A (en) * 1988-01-21 1991-04-30 Exar Corporation Method of making a complementary BiCMOS process with isolated vertical PNP transistors
JP2625602B2 (ja) * 1991-01-18 1997-07-02 インターナショナル・ビジネス・マシーンズ・コーポレイション 集積回路デバイスの製造プロセス
US5650340A (en) 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
US5622880A (en) 1994-08-18 1997-04-22 Sun Microsystems, Inc. Method of making a low power, high performance junction transistor
US6548642B1 (en) 1997-07-21 2003-04-15 Ohio University Synthetic genes for plant gums
US6570242B1 (en) * 1997-11-20 2003-05-27 Texas Instruments Incorporated Bipolar transistor with high breakdown voltage collector
JPH11238817A (ja) * 1998-02-24 1999-08-31 Rohm Co Ltd 半導体装置およびその製造方法
US6548842B1 (en) 2000-03-31 2003-04-15 National Semiconductor Corporation Field-effect transistor for alleviating short-channel effects
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
JP4003438B2 (ja) * 2001-11-07 2007-11-07 株式会社デンソー 半導体装置の製造方法および半導体装置
US6630377B1 (en) * 2002-09-18 2003-10-07 Chartered Semiconductor Manufacturing Ltd. Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
JP2005252158A (ja) * 2004-03-08 2005-09-15 Yamaha Corp バイポーラトランジスタとその製法
WO2005093796A1 (ja) * 2004-03-26 2005-10-06 The Kansai Electric Power Co., Inc. バイポーラ型半導体装置およびその製造方法
DE102004031606B4 (de) * 2004-06-30 2009-03-12 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren
US7419863B1 (en) 2005-08-29 2008-09-02 National Semiconductor Corporation Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone
US7838369B2 (en) 2005-08-29 2010-11-23 National Semiconductor Corporation Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US7642574B2 (en) 2005-08-29 2010-01-05 National Semiconductor Corporation Semiconductor architecture having field-effect transistors especially suitable for analog applications

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655772B (zh) * 2017-05-05 2019-04-01 旺宏電子股份有限公司 半導體元件
US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
TWI656619B (zh) * 2017-08-24 2019-04-11 新加坡商格羅方德半導體私人有限公司 用於ｅｓｄ之使用隔離的高電壓ｐｎｐ及其製造方法
TWI673619B (zh) * 2017-11-27 2019-10-01 美商格芯（美國）集成電路科技有限公司 利用具有模擬電路的系統產生動態空乏電晶體的模型
US11288430B2 (en) 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits

Also Published As

Publication number Publication date
WO2010110891A1 (en) 2010-09-30
US8030151B2 (en) 2011-10-04
JP2012522362A (ja) 2012-09-20
EP2412026A1 (en) 2012-02-01
CN102365748A (zh) 2012-02-29
WO2010110891A8 (en) 2011-08-11
KR20120003911A (ko) 2012-01-11
US20100244143A1 (en) 2010-09-30
EP2412026A4 (en) 2014-03-19
US8304308B2 (en) 2012-11-06
US20120181619A1 (en) 2012-07-19

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