KR20120003911A - 비-단결정질의 반도체 스페이싱 부분이 베이스-연결 길이를 조절하는 바이폴라 접합 트랜지스터를 갖는 반도체 구조의 구성 및 제조 - Google Patents

비-단결정질의 반도체 스페이싱 부분이 베이스-연결 길이를 조절하는 바이폴라 접합 트랜지스터를 갖는 반도체 구조의 구성 및 제조 Download PDF

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KR20120003911A
KR20120003911A KR1020117025421A KR20117025421A KR20120003911A KR 20120003911 A KR20120003911 A KR 20120003911A KR 1020117025421 A KR1020117025421 A KR 1020117025421A KR 20117025421 A KR20117025421 A KR 20117025421A KR 20120003911 A KR20120003911 A KR 20120003911A
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semiconductor
dopant
base
conductivity type
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Korean (ko)
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정-쥔 양 (사망)
콘스탄틴 브루케아
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내셔널 세미콘덕터 코포레이션
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Publication of KR20120003911A publication Critical patent/KR20120003911A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020117025421A 2009-03-27 2010-03-25 비-단결정질의 반도체 스페이싱 부분이 베이스-연결 길이를 조절하는 바이폴라 접합 트랜지스터를 갖는 반도체 구조의 구성 및 제조 Withdrawn KR20120003911A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/382,966 2009-03-27
US12/382,966 US8030151B2 (en) 2009-03-27 2009-03-27 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

Publications (1)

Publication Number Publication Date
KR20120003911A true KR20120003911A (ko) 2012-01-11

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KR1020117025421A Withdrawn KR20120003911A (ko) 2009-03-27 2010-03-25 비-단결정질의 반도체 스페이싱 부분이 베이스-연결 길이를 조절하는 바이폴라 접합 트랜지스터를 갖는 반도체 구조의 구성 및 제조

Country Status (7)

Country Link
US (2) US8030151B2 (https=)
EP (1) EP2412026A4 (https=)
JP (1) JP2012522362A (https=)
KR (1) KR20120003911A (https=)
CN (1) CN102365748A (https=)
TW (1) TW201108413A (https=)
WO (1) WO2010110891A1 (https=)

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US8716827B2 (en) 2012-09-11 2014-05-06 Texas Instruments Incorporated Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
US9190501B2 (en) * 2013-02-26 2015-11-17 Broadcom Corporation Semiconductor devices including a lateral bipolar structure with high current gains
US8981490B2 (en) * 2013-03-14 2015-03-17 Texas Instruments Incorporated Transistor with deep Nwell implanted through the gate
US9236453B2 (en) * 2013-09-27 2016-01-12 Ememory Technology Inc. Nonvolatile memory structure and fabrication method thereof
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
CN106170861B (zh) * 2014-01-16 2018-12-28 理想能量有限公司 对表面电荷敏感性降低的结构和方法
CN105633078B (zh) * 2015-12-23 2018-06-22 成都芯源系统有限公司 双极结型半导体器件及其制造方法
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
EP3358626B1 (en) * 2017-02-02 2022-07-20 Nxp B.V. Method of making a semiconductor switch device
TWI655772B (zh) * 2017-05-05 2019-04-01 旺宏電子股份有限公司 半導體元件
CN108807515B (zh) * 2017-05-05 2022-07-05 联华电子股份有限公司 双极性晶体管
US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
US10037988B1 (en) * 2017-08-24 2018-07-31 Globalfoundries Singapore Pte. Ltd. High voltage PNP using isolation for ESD and method for producing the same
US11288430B2 (en) * 2017-11-27 2022-03-29 Globalfoundries U.S. Inc. Producing models for dynamically depleted transistors using systems having simulation circuits
CN108389890B (zh) * 2018-01-12 2022-01-07 矽力杰半导体技术(杭州)有限公司 场效应晶体管及其制造方法
JP2021052150A (ja) * 2019-09-26 2021-04-01 株式会社村田製作所 パワーアンプ単位セル及びパワーアンプモジュール
US11217665B2 (en) * 2020-02-04 2022-01-04 Texas Instruments Incorporated Bipolar junction transistor with constricted collector region having high gain and early voltage product
US11551977B2 (en) * 2021-05-07 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improvement of photoresist patterning profile
US12176346B2 (en) * 2021-10-25 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US20250098190A1 (en) * 2023-09-14 2025-03-20 Globalfoundries U.S. Inc. Bipolar transistors

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Also Published As

Publication number Publication date
WO2010110891A1 (en) 2010-09-30
US8030151B2 (en) 2011-10-04
JP2012522362A (ja) 2012-09-20
EP2412026A1 (en) 2012-02-01
CN102365748A (zh) 2012-02-29
WO2010110891A8 (en) 2011-08-11
US20100244143A1 (en) 2010-09-30
EP2412026A4 (en) 2014-03-19
TW201108413A (en) 2011-03-01
US8304308B2 (en) 2012-11-06
US20120181619A1 (en) 2012-07-19

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PA0105 International application

Patent event date: 20111026

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid