ATE465516T1 - Verfahren und vorrichtung zur herstellung von cmos-feldeffekttransistoren - Google Patents

Verfahren und vorrichtung zur herstellung von cmos-feldeffekttransistoren

Info

Publication number
ATE465516T1
ATE465516T1 AT04766739T AT04766739T ATE465516T1 AT E465516 T1 ATE465516 T1 AT E465516T1 AT 04766739 T AT04766739 T AT 04766739T AT 04766739 T AT04766739 T AT 04766739T AT E465516 T1 ATE465516 T1 AT E465516T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistors
cmos field
producing cmos
silicidation
Prior art date
Application number
AT04766739T
Other languages
English (en)
Inventor
Cyril Cabral
Meikei Ieong
Jakub Kedzierski
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE465516T1 publication Critical patent/ATE465516T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
AT04766739T 2003-09-24 2004-09-08 Verfahren und vorrichtung zur herstellung von cmos-feldeffekttransistoren ATE465516T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/669,898 US7183182B2 (en) 2003-09-24 2003-09-24 Method and apparatus for fabricating CMOS field effect transistors
PCT/EP2004/052086 WO2005029579A1 (en) 2003-09-24 2004-09-08 Method and apparatus for fabricating cmos field effect transistors

Publications (1)

Publication Number Publication Date
ATE465516T1 true ATE465516T1 (de) 2010-05-15

Family

ID=34313783

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04766739T ATE465516T1 (de) 2003-09-24 2004-09-08 Verfahren und vorrichtung zur herstellung von cmos-feldeffekttransistoren

Country Status (9)

Country Link
US (2) US7183182B2 (de)
EP (1) EP1668695B1 (de)
JP (1) JP2007534148A (de)
KR (1) KR100818898B1 (de)
CN (1) CN100419999C (de)
AT (1) ATE465516T1 (de)
DE (1) DE602004026753D1 (de)
TW (1) TWI334632B (de)
WO (1) WO2005029579A1 (de)

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US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US7352025B2 (en) * 2003-12-08 2008-04-01 International Business Machines Corporation Semiconductor memory device with increased node capacitance
US7348265B2 (en) * 2004-03-01 2008-03-25 Texas Instruments Incorporated Semiconductor device having a silicided gate electrode and method of manufacture therefor
JP4116990B2 (ja) * 2004-09-28 2008-07-09 富士通株式会社 電界効果型トランジスタおよびその製造方法
JP2006114681A (ja) * 2004-10-14 2006-04-27 Nec Electronics Corp 半導体装置及びその製造方法
JP2006120718A (ja) * 2004-10-19 2006-05-11 Toshiba Corp 半導体装置およびその製造方法
US7611943B2 (en) * 2004-10-20 2009-11-03 Texas Instruments Incorporated Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation
JP2006324628A (ja) * 2005-05-16 2006-11-30 Interuniv Micro Electronica Centrum Vzw 完全ケイ化ゲート形成方法及び当該方法によって得られたデバイス
EP1724818A3 (de) * 2005-05-16 2007-12-26 Interuniversitair Microelektronica Centrum ( Imec) Verfahren zur Herstellung vollsilicidierter Dual-Gates und mit diesem Verfahren erhältliche Halbleiterbauelemente
US7473637B2 (en) 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7151023B1 (en) * 2005-08-01 2006-12-19 International Business Machines Corporation Metal gate MOSFET by full semiconductor metal alloy conversion
JPWO2007074775A1 (ja) * 2005-12-26 2009-06-04 日本電気株式会社 Ｎｍｏｓｆｅｔ及びその製造方法並びにｃｍｏｓｆｅｔ及びその製造方法
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions
US20070164367A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with solid-solution alloy tunable work functions
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
KR101036771B1 (ko) * 2006-07-25 2011-05-25 닛본 덴끼 가부시끼가이샤 반도체 장치 및 그 제조 방법
US20080206973A1 (en) * 2007-02-26 2008-08-28 Texas Instrument Inc. Process method to optimize fully silicided gate (FUSI) thru PAI implant
US7547596B2 (en) * 2007-08-01 2009-06-16 Texas Instruments Incorporated Method of enhancing drive current in a transistor
JP2009224509A (ja) * 2008-03-14 2009-10-01 Panasonic Corp 半導体装置及びその製造方法
CN101894749B (zh) * 2009-05-20 2013-03-20 中芯国际集成电路制造(北京)有限公司 半导体器件的栅极掺杂方法
CN106033718A (zh) * 2015-03-15 2016-10-19 中国科学院微电子研究所 一种金属硅化物的形成方法

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JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
JP2570179B2 (ja) * 1994-05-26 1997-01-08 日本電気株式会社 半導体集積回路装置の製造方法
US5593924A (en) * 1995-06-02 1997-01-14 Texas Instruments Incorporated Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines
US6297135B1 (en) * 1997-01-29 2001-10-02 Ultratech Stepper, Inc. Method for forming silicide regions on an integrated device
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Also Published As

Publication number Publication date
CN1853266A (zh) 2006-10-25
JP2007534148A (ja) 2007-11-22
WO2005029579A1 (en) 2005-03-31
EP1668695B1 (de) 2010-04-21
TWI334632B (en) 2010-12-11
KR100818898B1 (ko) 2008-04-04
EP1668695A1 (de) 2006-06-14
US20070128785A1 (en) 2007-06-07
US20050064636A1 (en) 2005-03-24
DE602004026753D1 (de) 2010-06-02
KR20060060723A (ko) 2006-06-05
CN100419999C (zh) 2008-09-17
US7183182B2 (en) 2007-02-27
TW200512882A (en) 2005-04-01

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