JP2012517711A5 - - Google Patents
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- JP2012517711A5 JP2012517711A5 JP2011549695A JP2011549695A JP2012517711A5 JP 2012517711 A5 JP2012517711 A5 JP 2012517711A5 JP 2011549695 A JP2011549695 A JP 2011549695A JP 2011549695 A JP2011549695 A JP 2011549695A JP 2012517711 A5 JP2012517711 A5 JP 2012517711A5
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- JP
- Japan
- Prior art keywords
- species
- plasma
- substrate
- supply
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 7
- 125000002091 cationic group Chemical group 0.000 claims 7
- 239000002243 precursor Substances 0.000 claims 6
- 125000000129 anionic group Chemical group 0.000 claims 5
- 150000001768 cations Chemical class 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 150000001450 anions Chemical class 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 230000007935 neutral effect Effects 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000005281 excited state Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2653581 | 2009-02-11 | ||
| CA2653581A CA2653581A1 (en) | 2009-02-11 | 2009-02-11 | Migration and plasma enhanced chemical vapour deposition |
| US18595309P | 2009-06-10 | 2009-06-10 | |
| US61/185,953 | 2009-06-10 | ||
| PCT/IB2010/000390 WO2010092482A2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012517711A JP2012517711A (ja) | 2012-08-02 |
| JP2012517711A5 true JP2012517711A5 (enExample) | 2013-03-21 |
Family
ID=42558510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011549695A Pending JP2012517711A (ja) | 2009-02-11 | 2010-02-10 | マイグレーション及びプラズマ増強化学蒸着 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8580670B2 (enExample) |
| EP (1) | EP2396808B1 (enExample) |
| JP (1) | JP2012517711A (enExample) |
| AU (1) | AU2010212553B2 (enExample) |
| CA (2) | CA2653581A1 (enExample) |
| WO (1) | WO2010092482A2 (enExample) |
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| US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
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| JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Iii 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| WO2015120513A1 (en) * | 2014-02-11 | 2015-08-20 | Kenneth Scott Alexander Butcher | Electrostatic control of metal wetting layers during deposition |
| US9978845B2 (en) | 2014-04-16 | 2018-05-22 | Yale University | Method of obtaining planar semipolar gallium nitride surfaces |
| CN106233471A (zh) | 2014-04-16 | 2016-12-14 | 耶鲁大学 | 蓝宝石衬底上的氮‑极性的半极性GaN层和器件 |
| JP6562350B2 (ja) * | 2015-08-26 | 2019-08-21 | 国立大学法人名古屋大学 | Iii族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| JP6527482B2 (ja) | 2016-03-14 | 2019-06-05 | 東芝デバイス&ストレージ株式会社 | 半導体製造装置 |
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| US10236409B2 (en) | 2016-05-20 | 2019-03-19 | Lumileds Llc | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices |
| WO2018031876A1 (en) | 2016-08-12 | 2018-02-15 | Yale University | Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth |
| KR102227883B1 (ko) | 2016-12-14 | 2021-03-16 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | 급속 열 활성화 공정과 함께 플라즈마를 이용하는 원자층 에칭 공정 |
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| JP6744346B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス&ストレージ株式会社 | 成膜装置 |
| JP7126381B2 (ja) * | 2018-05-21 | 2022-08-26 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP7202604B2 (ja) * | 2018-10-23 | 2023-01-12 | 国立大学法人東海国立大学機構 | Iii族窒化物半導体素子とその製造方法および半導体ウエハの製造方法およびテンプレート基板の製造方法 |
| US12018374B2 (en) * | 2019-03-08 | 2024-06-25 | Dsgi Technologies, Inc. | System and method of low temperature thin film deposition and in-situ annealing |
| JP6710795B2 (ja) * | 2019-03-13 | 2020-06-17 | 東芝デバイス&ストレージ株式会社 | 半導体装置の製造方法 |
| CN110016656B (zh) * | 2019-05-23 | 2020-11-24 | 深圳市华星光电技术有限公司 | 化学气相沉积腔室 |
| CN111268685B (zh) * | 2020-03-09 | 2022-10-28 | 邓咏兰 | 一种气相二氧化硅的合成工艺 |
| US11373845B2 (en) * | 2020-06-05 | 2022-06-28 | Applied Materials, Inc. | Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes |
| JP7722691B2 (ja) * | 2021-07-30 | 2025-08-13 | 国立大学法人東海国立大学機構 | Iii族窒化物半導体素子の製造方法 |
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-
2009
- 2009-02-11 CA CA2653581A patent/CA2653581A1/en not_active Abandoned
-
2010
- 2010-02-10 AU AU2010212553A patent/AU2010212553B2/en active Active
- 2010-02-10 EP EP10740987.2A patent/EP2396808B1/en active Active
- 2010-02-10 CA CA2756994A patent/CA2756994C/en active Active
- 2010-02-10 US US12/703,713 patent/US8580670B2/en active Active
- 2010-02-10 WO PCT/IB2010/000390 patent/WO2010092482A2/en not_active Ceased
- 2010-02-10 JP JP2011549695A patent/JP2012517711A/ja active Pending
-
2013
- 2013-01-23 US US13/748,458 patent/US9045824B2/en active Active
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