CA2653581A1 - Migration and plasma enhanced chemical vapour deposition - Google Patents
Migration and plasma enhanced chemical vapour deposition Download PDFInfo
- Publication number
- CA2653581A1 CA2653581A1 CA2653581A CA2653581A CA2653581A1 CA 2653581 A1 CA2653581 A1 CA 2653581A1 CA 2653581 A CA2653581 A CA 2653581A CA 2653581 A CA2653581 A CA 2653581A CA 2653581 A1 CA2653581 A1 CA 2653581A1
- Authority
- CA
- Canada
- Prior art keywords
- plasma
- species
- growth
- rpecvd
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 24
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 title claims abstract description 23
- 230000005012 migration Effects 0.000 title description 11
- 238000013508 migration Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 150000001768 cations Chemical class 0.000 claims abstract description 16
- 150000001450 anions Chemical class 0.000 claims abstract description 12
- 230000004907 flux Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 53
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 abstract description 38
- 239000000428 dust Substances 0.000 abstract description 27
- 230000015572 biosynthetic process Effects 0.000 abstract description 23
- 239000000376 reactant Substances 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 76
- 241000894007 species Species 0.000 description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 31
- 239000007789 gas Substances 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 230000007935 neutral effect Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010574 gas phase reaction Methods 0.000 description 5
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- -1 rare earth nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000295146 Gallionellaceae Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2653581A CA2653581A1 (en) | 2009-02-11 | 2009-02-11 | Migration and plasma enhanced chemical vapour deposition |
| AU2010212553A AU2010212553B2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
| PCT/IB2010/000390 WO2010092482A2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
| JP2011549695A JP2012517711A (ja) | 2009-02-11 | 2010-02-10 | マイグレーション及びプラズマ増強化学蒸着 |
| US12/703,713 US8580670B2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
| EP10740987.2A EP2396808B1 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
| CA2756994A CA2756994C (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
| US13/748,458 US9045824B2 (en) | 2009-02-11 | 2013-01-23 | Migration and plasma enhanced chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2653581A CA2653581A1 (en) | 2009-02-11 | 2009-02-11 | Migration and plasma enhanced chemical vapour deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2653581A1 true CA2653581A1 (en) | 2010-08-11 |
Family
ID=42558510
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2653581A Abandoned CA2653581A1 (en) | 2009-02-11 | 2009-02-11 | Migration and plasma enhanced chemical vapour deposition |
| CA2756994A Active CA2756994C (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2756994A Active CA2756994C (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8580670B2 (enExample) |
| EP (1) | EP2396808B1 (enExample) |
| JP (1) | JP2012517711A (enExample) |
| AU (1) | AU2010212553B2 (enExample) |
| CA (2) | CA2653581A1 (enExample) |
| WO (1) | WO2010092482A2 (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20140008210A1 (en) * | 2012-07-06 | 2014-01-09 | Aviva Biosciences Corporation | Methods and compositions for separating or enriching cells |
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| US20080092819A1 (en) * | 2006-10-24 | 2008-04-24 | Applied Materials, Inc. | Substrate support structure with rapid temperature change |
| US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
| US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
| US20100139554A1 (en) * | 2008-12-08 | 2010-06-10 | Applied Materials, Inc. | Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films |
| US8110889B2 (en) * | 2009-04-28 | 2012-02-07 | Applied Materials, Inc. | MOCVD single chamber split process for LED manufacturing |
| US20110079251A1 (en) * | 2009-04-28 | 2011-04-07 | Olga Kryliouk | Method for in-situ cleaning of deposition systems |
| TW201039381A (en) * | 2009-04-29 | 2010-11-01 | Applied Materials Inc | Method of forming in-situ pre-GaN deposition layer in HVPE |
| US20110104843A1 (en) * | 2009-07-31 | 2011-05-05 | Applied Materials, Inc. | Method of reducing degradation of multi quantum well (mqw) light emitting diodes |
| US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
| US20110117728A1 (en) | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
| US20110064545A1 (en) * | 2009-09-16 | 2011-03-17 | Applied Materials, Inc. | Substrate transfer mechanism with preheating features |
| US20110076400A1 (en) * | 2009-09-30 | 2011-03-31 | Applied Materials, Inc. | Nanocrystalline diamond-structured carbon coating of silicon carbide |
| CN102414846A (zh) * | 2009-10-07 | 2012-04-11 | 应用材料公司 | 用于led制造的改良多腔室分离处理 |
| US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
| US20110207256A1 (en) * | 2010-02-24 | 2011-08-25 | Applied Materials, Inc. | In-situ acceptor activation with nitrogen and/or oxygen plasma treatment |
| JP5759690B2 (ja) * | 2010-08-30 | 2015-08-05 | 株式会社日立国際電気 | 膜の形成方法、半導体装置の製造方法及び基板処理装置 |
| US9076827B2 (en) | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
| US20120204957A1 (en) * | 2011-02-10 | 2012-08-16 | David Nicholls | METHOD FOR GROWING AlInGaN LAYER |
| US8143147B1 (en) | 2011-02-10 | 2012-03-27 | Intermolecular, Inc. | Methods and systems for forming thin films |
| US20120258555A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode and Systems Implementing the Same |
| US8524581B2 (en) * | 2011-12-29 | 2013-09-03 | Intermolecular, Inc. | GaN epitaxy with migration enhancement and surface energy modification |
| WO2013158210A2 (en) | 2012-02-17 | 2013-10-24 | Yale University | Heterogeneous material integration through guided lateral growth |
| US20140124788A1 (en) * | 2012-11-06 | 2014-05-08 | Intermolecular, Inc. | Chemical Vapor Deposition System |
| US9738976B2 (en) * | 2013-02-27 | 2017-08-22 | Ioxus, Inc. | Energy storage device assembly |
| WO2014144698A2 (en) | 2013-03-15 | 2014-09-18 | Yale University | Large-area, laterally-grown epitaxial semiconductor layers |
| US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
| KR20150107756A (ko) * | 2013-11-06 | 2015-09-23 | 맷슨 테크놀로지, 인크. | 수직 앤에이앤디 디바이스에 대한 새로운 마스크 제거 방법 |
| JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Ｉｉｉ 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| WO2015120513A1 (en) * | 2014-02-11 | 2015-08-20 | Kenneth Scott Alexander Butcher | Electrostatic control of metal wetting layers during deposition |
| US9978845B2 (en) | 2014-04-16 | 2018-05-22 | Yale University | Method of obtaining planar semipolar gallium nitride surfaces |
| CN106233471A (zh) | 2014-04-16 | 2016-12-14 | 耶鲁大学 | 蓝宝石衬底上的氮‑极性的半极性GaN层和器件 |
| JP6562350B2 (ja) * | 2015-08-26 | 2019-08-21 | 国立大学法人名古屋大学 | Ｉｉｉ族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| JP6527482B2 (ja) | 2016-03-14 | 2019-06-05 | 東芝デバイス＆ストレージ株式会社 | 半導体製造装置 |
| JP6515050B2 (ja) * | 2016-03-15 | 2019-05-15 | 東芝デバイス＆ストレージ株式会社 | 半導体製造装置 |
| US10236409B2 (en) | 2016-05-20 | 2019-03-19 | Lumileds Llc | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices |
| WO2018031876A1 (en) | 2016-08-12 | 2018-02-15 | Yale University | Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth |
| KR102227883B1 (ko) | 2016-12-14 | 2021-03-16 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | 급속 열 활성화 공정과 함께 플라즈마를 이용하는 원자층 에칭 공정 |
| US10361143B2 (en) * | 2017-06-01 | 2019-07-23 | Raytheon Company | Apparatus and method for reconfigurable thermal management using flow control of liquid metal |
| JP6744347B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス＆ストレージ株式会社 | 半導体装置の製造方法 |
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| WO2010092482A2 (en) | 2010-08-19 |
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| EP2396808B1 (en) | 2021-07-07 |
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| AU2010212553A1 (en) | 2011-09-15 |
| EP2396808A2 (en) | 2011-12-21 |
| AU2010212553B2 (en) | 2014-05-15 |
| US8580670B2 (en) | 2013-11-12 |
| EP2396808A4 (en) | 2013-10-16 |
| WO2010092482A3 (en) | 2010-11-25 |
| US20140037865A1 (en) | 2014-02-06 |
| US20100210067A1 (en) | 2010-08-19 |
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