AU2010212553B2 - Migration and plasma enhanced chemical vapor deposition - Google Patents
Migration and plasma enhanced chemical vapor deposition Download PDFInfo
- Publication number
- AU2010212553B2 AU2010212553B2 AU2010212553A AU2010212553A AU2010212553B2 AU 2010212553 B2 AU2010212553 B2 AU 2010212553B2 AU 2010212553 A AU2010212553 A AU 2010212553A AU 2010212553 A AU2010212553 A AU 2010212553A AU 2010212553 B2 AU2010212553 B2 AU 2010212553B2
- Authority
- AU
- Australia
- Prior art keywords
- plasma
- species
- nitrogen
- group iii
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 32
- 238000013508 migration Methods 0.000 title description 13
- 230000005012 migration Effects 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 239000010409 thin film Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 67
- 230000004907 flux Effects 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 295
- 229910052757 nitrogen Inorganic materials 0.000 claims description 140
- 229910052751 metal Inorganic materials 0.000 claims description 139
- 239000002184 metal Substances 0.000 claims description 139
- 238000006243 chemical reaction Methods 0.000 claims description 83
- 230000007935 neutral effect Effects 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 58
- 239000002243 precursor Substances 0.000 claims description 58
- 150000004767 nitrides Chemical class 0.000 claims description 41
- 239000010410 layer Substances 0.000 claims description 34
- 239000002356 single layer Substances 0.000 claims description 20
- 230000005281 excited state Effects 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 57
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 abstract description 41
- 150000001768 cations Chemical class 0.000 abstract description 39
- 230000015572 biosynthetic process Effects 0.000 abstract description 34
- 150000001450 anions Chemical class 0.000 abstract description 29
- 239000000428 dust Substances 0.000 abstract description 29
- 239000000376 reactant Substances 0.000 abstract description 17
- 230000009467 reduction Effects 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 241000894007 species Species 0.000 description 250
- 210000002381 plasma Anatomy 0.000 description 214
- 238000005381 potential energy Methods 0.000 description 22
- 239000012071 phase Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- -1 e.g. Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010791 quenching Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 6
- 238000010574 gas phase reaction Methods 0.000 description 6
- 230000000171 quenching effect Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910016285 MxNy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 102100035353 Cyclin-dependent kinase 2-associated protein 1 Human genes 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2653581A CA2653581A1 (en) | 2009-02-11 | 2009-02-11 | Migration and plasma enhanced chemical vapour deposition |
| CA2653581 | 2009-02-11 | ||
| US18595309P | 2009-06-10 | 2009-06-10 | |
| US61/185,953 | 2009-06-10 | ||
| PCT/IB2010/000390 WO2010092482A2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2010212553A1 AU2010212553A1 (en) | 2011-09-15 |
| AU2010212553B2 true AU2010212553B2 (en) | 2014-05-15 |
Family
ID=42558510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2010212553A Active AU2010212553B2 (en) | 2009-02-11 | 2010-02-10 | Migration and plasma enhanced chemical vapor deposition |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8580670B2 (enExample) |
| EP (1) | EP2396808B1 (enExample) |
| JP (1) | JP2012517711A (enExample) |
| AU (1) | AU2010212553B2 (enExample) |
| CA (2) | CA2653581A1 (enExample) |
| WO (1) | WO2010092482A2 (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140008210A1 (en) * | 2012-07-06 | 2014-01-09 | Aviva Biosciences Corporation | Methods and compositions for separating or enriching cells |
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| US20080092819A1 (en) * | 2006-10-24 | 2008-04-24 | Applied Materials, Inc. | Substrate support structure with rapid temperature change |
| US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
| US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
| US20100139554A1 (en) * | 2008-12-08 | 2010-06-10 | Applied Materials, Inc. | Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films |
| US20110079251A1 (en) * | 2009-04-28 | 2011-04-07 | Olga Kryliouk | Method for in-situ cleaning of deposition systems |
| US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
| TW201039381A (en) * | 2009-04-29 | 2010-11-01 | Applied Materials Inc | Method of forming in-situ pre-GaN deposition layer in HVPE |
| US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
| US20110104843A1 (en) * | 2009-07-31 | 2011-05-05 | Applied Materials, Inc. | Method of reducing degradation of multi quantum well (mqw) light emitting diodes |
| US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
| US20110064545A1 (en) * | 2009-09-16 | 2011-03-17 | Applied Materials, Inc. | Substrate transfer mechanism with preheating features |
| US20110076400A1 (en) * | 2009-09-30 | 2011-03-31 | Applied Materials, Inc. | Nanocrystalline diamond-structured carbon coating of silicon carbide |
| CN102414846A (zh) * | 2009-10-07 | 2012-04-11 | 应用材料公司 | 用于led制造的改良多腔室分离处理 |
| US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
| US20110207256A1 (en) * | 2010-02-24 | 2011-08-25 | Applied Materials, Inc. | In-situ acceptor activation with nitrogen and/or oxygen plasma treatment |
| JP5759690B2 (ja) * | 2010-08-30 | 2015-08-05 | 株式会社日立国際電気 | 膜の形成方法、半導体装置の製造方法及び基板処理装置 |
| US9076827B2 (en) | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
| US8143147B1 (en) * | 2011-02-10 | 2012-03-27 | Intermolecular, Inc. | Methods and systems for forming thin films |
| US20120204957A1 (en) * | 2011-02-10 | 2012-08-16 | David Nicholls | METHOD FOR GROWING AlInGaN LAYER |
| US20120258555A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode and Systems Implementing the Same |
| US8524581B2 (en) * | 2011-12-29 | 2013-09-03 | Intermolecular, Inc. | GaN epitaxy with migration enhancement and surface energy modification |
| WO2013158210A2 (en) | 2012-02-17 | 2013-10-24 | Yale University | Heterogeneous material integration through guided lateral growth |
| US20140124788A1 (en) * | 2012-11-06 | 2014-05-08 | Intermolecular, Inc. | Chemical Vapor Deposition System |
| US9738976B2 (en) * | 2013-02-27 | 2017-08-22 | Ioxus, Inc. | Energy storage device assembly |
| US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
| US9711352B2 (en) | 2013-03-15 | 2017-07-18 | Yale University | Large-area, laterally-grown epitaxial semiconductor layers |
| WO2015069613A1 (en) * | 2013-11-06 | 2015-05-14 | Mattson Technology, Inc. | Novel mask removal process strategy for vertical nand device |
| JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Ｉｉｉ 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| WO2015120513A1 (en) * | 2014-02-11 | 2015-08-20 | Kenneth Scott Alexander Butcher | Electrostatic control of metal wetting layers during deposition |
| CN106233429B (zh) | 2014-04-16 | 2019-06-18 | 耶鲁大学 | 获得平坦的半极性氮化镓表面的方法 |
| WO2015160903A1 (en) * | 2014-04-16 | 2015-10-22 | Yale University | Nitrogen-polar semipolar gan layers and devices on sapphire substrates |
| JP6562350B2 (ja) * | 2015-08-26 | 2019-08-21 | 国立大学法人名古屋大学 | Ｉｉｉ族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
| JP6527482B2 (ja) | 2016-03-14 | 2019-06-05 | 東芝デバイス＆ストレージ株式会社 | 半導体製造装置 |
| JP6515050B2 (ja) * | 2016-03-15 | 2019-05-15 | 東芝デバイス＆ストレージ株式会社 | 半導体製造装置 |
| KR102136770B1 (ko) | 2016-05-20 | 2020-07-22 | 루미레즈 엘엘씨 | 발광 디바이스들 내의 층들을 성장시키기 위해 원격 플라즈마 화학 기상 퇴적(rp-cvd) 및 스퍼터링 퇴적을 사용하기 위한 방법들 |
| CN109564850A (zh) | 2016-08-12 | 2019-04-02 | 耶鲁大学 | 通过在生长期间消除氮极性小面而在异质衬底上生长的无堆垛层错的半极性和非极性gan |
| CN110088882B (zh) | 2016-12-14 | 2023-05-26 | 玛特森技术公司 | 与快速热活化工艺相结合的使用等离子体的原子层刻蚀工艺 |
| US10361143B2 (en) * | 2017-06-01 | 2019-07-23 | Raytheon Company | Apparatus and method for reconfigurable thermal management using flow control of liquid metal |
| JP6744346B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス＆ストレージ株式会社 | 成膜装置 |
| JP6744347B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス＆ストレージ株式会社 | 半導体装置の製造方法 |
| JP7126381B2 (ja) * | 2018-05-21 | 2022-08-26 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP7202604B2 (ja) * | 2018-10-23 | 2023-01-12 | 国立大学法人東海国立大学機構 | Ｉｉｉ族窒化物半導体素子とその製造方法および半導体ウエハの製造方法およびテンプレート基板の製造方法 |
| US12018374B2 (en) * | 2019-03-08 | 2024-06-25 | Dsgi Technologies, Inc. | System and method of low temperature thin film deposition and in-situ annealing |
| JP6710795B2 (ja) * | 2019-03-13 | 2020-06-17 | 東芝デバイス＆ストレージ株式会社 | 半導体装置の製造方法 |
| CN110016656B (zh) * | 2019-05-23 | 2020-11-24 | 深圳市华星光电技术有限公司 | 化学气相沉积腔室 |
| CN111268685B (zh) * | 2020-03-09 | 2022-10-28 | 邓咏兰 | 一种气相二氧化硅的合成工艺 |
| US11373845B2 (en) * | 2020-06-05 | 2022-06-28 | Applied Materials, Inc. | Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes |
| JP7722691B2 (ja) * | 2021-07-30 | 2025-08-13 | 国立大学法人東海国立大学機構 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006034540A1 (en) * | 2004-09-27 | 2006-04-06 | Gallium Enterprises Pty Ltd | Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film |
| US20060110943A1 (en) * | 2004-08-27 | 2006-05-25 | Johan Swerts | Remote plasma activated nitridation |
Family Cites Families (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59150417A (ja) | 1983-02-08 | 1984-08-28 | Toshiba Corp | 気相成長方法およびその装置 |
| US4614961A (en) | 1984-10-09 | 1986-09-30 | Honeywell Inc. | Tunable cut-off UV detector based on the aluminum gallium nitride material system |
| US4616248A (en) | 1985-05-20 | 1986-10-07 | Honeywell Inc. | UV photocathode using negative electron affinity effect in Alx Ga1 N |
| US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| US4830702A (en) | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
| EP0322466A1 (en) | 1987-12-24 | 1989-07-05 | Ibm Deutschland Gmbh | PECVD (plasma enhanced chemical vapor deposition) method for deposition of tungsten or layers containing tungsten by in situ formation of tungsten fluorides |
| JPH01204411A (ja) | 1988-02-09 | 1989-08-17 | Nec Corp | 半導体装置の製造方法 |
| US5102694A (en) * | 1990-09-27 | 1992-04-07 | Cvd Incorporated | Pulsed chemical vapor deposition of gradient index optical material |
| US5133986A (en) | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
| EP0525297A3 (en) | 1991-05-08 | 1993-10-06 | Fujitsu Limited | Method of growing doped crystal |
| US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
| FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
| US5863831A (en) * | 1995-08-14 | 1999-01-26 | Advanced Materials Engineering Research, Inc. | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility |
| GB2313606A (en) | 1996-06-01 | 1997-12-03 | Sharp Kk | Forming a compound semiconductor film |
| US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
| US6197683B1 (en) | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
| JP3844274B2 (ja) | 1998-06-25 | 2006-11-08 | 独立行政法人産業技術総合研究所 | プラズマｃｖｄ装置及びプラズマｃｖｄ方法 |
| WO2000041607A1 (en) | 1999-01-12 | 2000-07-20 | Island Oasis Frozen Cocktail Co., Inc. | Food processing apparatus including magnetic drive |
| US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
| US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| SE516722C2 (sv) * | 1999-04-28 | 2002-02-19 | Hana Barankova | Förfarande och apparat för plasmabehandling av gas |
| US6563144B2 (en) * | 1999-09-01 | 2003-05-13 | The Regents Of The University Of California | Process for growing epitaxial gallium nitride and composite wafers |
| US6444039B1 (en) | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
| US6745717B2 (en) * | 2000-06-22 | 2004-06-08 | Arizona Board Of Regents | Method and apparatus for preparing nitride semiconductor surfaces |
| KR100767294B1 (ko) | 2000-06-23 | 2007-10-16 | 캐논 아네르바 가부시키가이샤 | Ｃｖｄ장치 |
| US6600169B2 (en) * | 2000-09-22 | 2003-07-29 | Andreas Stintz | Quantum dash device |
| US6764888B2 (en) | 2000-09-27 | 2004-07-20 | Sensor Electronic Technology, Inc. | Method of producing nitride-based heterostructure devices |
| US6690042B2 (en) | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
| US6689220B1 (en) * | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
| US6610169B2 (en) | 2001-04-21 | 2003-08-26 | Simplus Systems Corporation | Semiconductor processing system and method |
| US7867905B2 (en) * | 2001-04-21 | 2011-01-11 | Tegal Corporation | System and method for semiconductor processing |
| US7442615B2 (en) * | 2001-04-21 | 2008-10-28 | Tegal Corporation | Semiconductor processing system and method |
| US20030049916A1 (en) | 2001-08-20 | 2003-03-13 | The Hong Kong Polytechnic University | Development of an intermediate-temperature buffer layer for the growth of high-quality GaxInyAlzN epitaxial layers by molecular beam epitaxy |
| US6756318B2 (en) * | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US20030215570A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
| AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
| US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
| US6902774B2 (en) * | 2002-07-25 | 2005-06-07 | Inficon Gmbh | Method of manufacturing a device |
| KR100497748B1 (ko) | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
| JP2004140339A (ja) | 2002-09-25 | 2004-05-13 | Univ Chiba | 窒化物系ヘテロ構造を有するデバイス及びその製造方法 |
| JP3574651B2 (ja) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| US7713592B2 (en) * | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| US7070833B2 (en) | 2003-03-05 | 2006-07-04 | Restek Corporation | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments |
| US7192849B2 (en) | 2003-05-07 | 2007-03-20 | Sensor Electronic Technology, Inc. | Methods of growing nitride-based film using varying pulses |
| US7268375B2 (en) | 2003-10-27 | 2007-09-11 | Sensor Electronic Technology, Inc. | Inverted nitride-based semiconductor structure |
| DE10350752A1 (de) | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Verfahren zum Ausbilden eines Dielektrikums auf einer kupferhaltigen Metallisierung und Kondensatoranordnung |
| JP2005229013A (ja) | 2004-02-16 | 2005-08-25 | Ishikawajima Harima Heavy Ind Co Ltd | 窒化物半導体の成長方法 |
| US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
| US20050223986A1 (en) | 2004-04-12 | 2005-10-13 | Choi Soo Y | Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition |
| KR101084631B1 (ko) | 2004-05-13 | 2011-11-18 | 매그나칩 반도체 유한회사 | 퍼지 펄스트 ｍｏｃｖｄ 방법 및 이를 이용한 반도체소자의 유전막 제조방법 |
| US20060021574A1 (en) | 2004-08-02 | 2006-02-02 | Veeco Instruments Inc. | Multi-gas distribution injector for chemical vapor deposition reactors |
| US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
| US7491626B2 (en) | 2005-06-20 | 2009-02-17 | Sensor Electronic Technology, Inc. | Layer growth using metal film and/or islands |
| US7416994B2 (en) | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US7897217B2 (en) * | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
| US20070116872A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| US8603248B2 (en) | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| EP1994552B1 (en) | 2006-03-10 | 2020-12-30 | UNM Rainforest Innovations | Two-phase growth of group iii-v nanowires |
| US20070215036A1 (en) * | 2006-03-15 | 2007-09-20 | Hyung-Sang Park | Method and apparatus of time and space co-divided atomic layer deposition |
| KR100782291B1 (ko) | 2006-05-11 | 2007-12-05 | 주식회사 아토 | 가스분리형 샤워헤드 및 이를 이용한 펄스 ｃｖｄ 장치 |
| WO2007139379A1 (en) | 2006-05-30 | 2007-12-06 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for deposition using pulsed atmospheric pressure glow discharge |
| US7691757B2 (en) * | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US8268409B2 (en) * | 2006-10-25 | 2012-09-18 | Asm America, Inc. | Plasma-enhanced deposition of metal carbide films |
| WO2009002365A1 (en) | 2006-12-15 | 2008-12-31 | University Of South Carolina | Pulsed selective area lateral epitaxy for growth of iii-nitride materials over non-polar and semi-polar substrates |
| CN102127752B (zh) | 2007-01-12 | 2014-06-25 | 威科仪器有限公司 | 气体处理系统 |
| US8318562B2 (en) | 2007-04-02 | 2012-11-27 | University Of South Carolina | Method to increase breakdown voltage of semiconductor devices |
| CA2638191A1 (en) | 2007-07-20 | 2009-01-20 | Gallium Enterprises Pty Ltd | Buried contact devices for nitride-based films and manufacture thereof |
| US20110140072A1 (en) | 2008-08-21 | 2011-06-16 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
| US8501624B2 (en) * | 2008-12-04 | 2013-08-06 | Varian Semiconductor Equipment Associates, Inc. | Excited gas injection for ion implant control |
| EP2396449B1 (en) | 2009-02-13 | 2015-08-05 | Gallium Enterprises Pty Ltd | Plasma deposition |
| US8039394B2 (en) * | 2009-06-26 | 2011-10-18 | Seagate Technology Llc | Methods of forming layers of alpha-tantalum |
-
2009
- 2009-02-11 CA CA2653581A patent/CA2653581A1/en not_active Abandoned
-
2010
- 2010-02-10 AU AU2010212553A patent/AU2010212553B2/en active Active
- 2010-02-10 EP EP10740987.2A patent/EP2396808B1/en active Active
- 2010-02-10 US US12/703,713 patent/US8580670B2/en active Active
- 2010-02-10 CA CA2756994A patent/CA2756994C/en active Active
- 2010-02-10 JP JP2011549695A patent/JP2012517711A/ja active Pending
- 2010-02-10 WO PCT/IB2010/000390 patent/WO2010092482A2/en not_active Ceased
-
2013
- 2013-01-23 US US13/748,458 patent/US9045824B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060110943A1 (en) * | 2004-08-27 | 2006-05-25 | Johan Swerts | Remote plasma activated nitridation |
| WO2006034540A1 (en) * | 2004-09-27 | 2006-04-06 | Gallium Enterprises Pty Ltd | Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2010212553A1 (en) | 2011-09-15 |
| WO2010092482A2 (en) | 2010-08-19 |
| US8580670B2 (en) | 2013-11-12 |
| EP2396808A4 (en) | 2013-10-16 |
| US9045824B2 (en) | 2015-06-02 |
| US20140037865A1 (en) | 2014-02-06 |
| CA2653581A1 (en) | 2010-08-11 |
| EP2396808B1 (en) | 2021-07-07 |
| EP2396808A2 (en) | 2011-12-21 |
| WO2010092482A3 (en) | 2010-11-25 |
| CA2756994A1 (en) | 2010-08-19 |
| CA2756994C (en) | 2017-03-07 |
| US20100210067A1 (en) | 2010-08-19 |
| JP2012517711A (ja) | 2012-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2010212553B2 (en) | Migration and plasma enhanced chemical vapor deposition | |
| US9466479B2 (en) | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy | |
| KR102723608B1 (ko) | 실리콘 산화물막에 대한 증착후 처리 방법 | |
| US20190112708A1 (en) | Electrostatic control of metal wetting layers during deposition | |
| US8465811B2 (en) | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma | |
| US20130032085A1 (en) | Plasma assisted hvpe chamber design | |
| US20040086434A1 (en) | Apparatus and method for treating objects with radicals generated from plasma | |
| US20130285065A1 (en) | Pvd buffer layers for led fabrication | |
| US20130087093A1 (en) | Apparatus and method for hvpe processing using a plasma | |
| CN103806093B (zh) | 基于icp的化合物半导体的外延生长装置及方法 | |
| US20060118043A1 (en) | Method for producing coated workpieces, uses and installation for the method | |
| JP2024544271A (ja) | ２次元層状材料に材料を堆積する方法 | |
| JP2013070016A (ja) | 窒化物半導体結晶成長装置およびその成長方法 | |
| RU214891U1 (ru) | Устройство для газоструйного осаждения алмазных покрытий | |
| RU2792526C1 (ru) | Устройство для нанесения алмазных покрытий | |
| JP2019085624A (ja) | 窒化物膜の形成方法 | |
| JP4782314B2 (ja) | プラズマ源及び化合物薄膜作成装置 | |
| CN103938272A (zh) | 等离子体辅助的外延生长装置及方法 | |
| AU2012202511A1 (en) | System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy | |
| JP2012160644A (ja) | ＩｎＮを含む半導体層の成膜方法および気相成長装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FGA | Letters patent sealed or granted (standard patent) |