JP2012513950A - シリコン溶融物から多結晶シリコンインゴットを引き上げるための方法及び引上アセンブリ - Google Patents

シリコン溶融物から多結晶シリコンインゴットを引き上げるための方法及び引上アセンブリ Download PDF

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Publication number
JP2012513950A
JP2012513950A JP2011544542A JP2011544542A JP2012513950A JP 2012513950 A JP2012513950 A JP 2012513950A JP 2011544542 A JP2011544542 A JP 2011544542A JP 2011544542 A JP2011544542 A JP 2011544542A JP 2012513950 A JP2012513950 A JP 2012513950A
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Japan
Prior art keywords
ingot
seed crystals
pulling
chuck
pulling apparatus
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JP2011544542A
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Japanese (ja)
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JP2012513950A5 (enExample
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スティーブン・エル・キンベル
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SunEdison Products Singapore Pte Ltd
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SunEdison Products Singapore Pte Ltd
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Publication of JP2012513950A publication Critical patent/JP2012513950A/ja
Publication of JP2012513950A5 publication Critical patent/JP2012513950A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2011544542A 2008-12-30 2009-12-23 シリコン溶融物から多結晶シリコンインゴットを引き上げるための方法及び引上アセンブリ Withdrawn JP2012513950A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14156708P 2008-12-30 2008-12-30
US61/141,567 2008-12-30
PCT/US2009/069488 WO2010078205A1 (en) 2008-12-30 2009-12-23 Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt

Publications (2)

Publication Number Publication Date
JP2012513950A true JP2012513950A (ja) 2012-06-21
JP2012513950A5 JP2012513950A5 (enExample) 2012-12-27

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ID=41667249

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JP2011544542A Withdrawn JP2012513950A (ja) 2008-12-30 2009-12-23 シリコン溶融物から多結晶シリコンインゴットを引き上げるための方法及び引上アセンブリ

Country Status (8)

Country Link
US (3) US8932550B2 (enExample)
EP (1) EP2382342A1 (enExample)
JP (1) JP2012513950A (enExample)
KR (1) KR20110127134A (enExample)
CN (1) CN102333909A (enExample)
SG (3) SG172436A1 (enExample)
TW (1) TW201033412A (enExample)
WO (1) WO2010078205A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
US20140137794A1 (en) * 2012-11-19 2014-05-22 Memc Singapore, Pte. Ltd (Uen200614797D) Method of Preparing A Directional Solidification System Furnace
US8900972B2 (en) 2012-11-19 2014-12-02 Memc Singapore Pte. Ltd. Systems and methods for producing seed bricks
US9111745B2 (en) 2012-12-31 2015-08-18 MEMC Singapore Pte., Ltd. (UEN200614794D) Methods for producing rectangular seeds for ingot growth
US20140186486A1 (en) * 2012-12-31 2014-07-03 Memc Singapore, Pte. Ltd (Uen200614797D) Apparatus For Producing Rectangular Seeds
CN106702481B (zh) * 2017-03-20 2019-01-29 宁夏佳晶科技有限公司 一种改进的多片式导模法人造蓝宝石制备工艺
CN108193263A (zh) * 2018-01-26 2018-06-22 山东大海新能源发展有限公司 一种单晶生产炉
JP6776486B1 (ja) * 2019-05-21 2020-10-28 株式会社トクヤマ 搬出治具、搬出方法及びシリコンロッドの製造方法
CN110777425A (zh) * 2019-11-24 2020-02-11 田达晰 带晶种升降单元的铸造硅单晶炉及硅单晶生长方法
CN116555905A (zh) * 2023-05-19 2023-08-08 西安奕斯伟材料科技股份有限公司 单晶炉和晶棒生长方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism
JP3488531B2 (ja) * 1994-12-19 2004-01-19 コマツ電子金属株式会社 多結晶棒の吊り具
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
US5797990A (en) * 1996-02-26 1998-08-25 Ferrofluidics Corporation Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller
JP3716874B2 (ja) * 1996-03-01 2005-11-16 信越半導体株式会社 種結晶保持治具
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
JP3684769B2 (ja) * 1997-06-23 2005-08-17 信越半導体株式会社 シリコン単結晶の製造方法および保持する方法
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6015461A (en) * 1997-09-12 2000-01-18 Sumitomo Sitix Corporation Seed crystal holders, for pulling a single crystal
US6183553B1 (en) 1998-06-15 2001-02-06 Memc Electronic Materials, Inc. Process and apparatus for preparation of silicon crystals with reduced metal content
CN1109778C (zh) 2000-08-16 2003-05-28 浙江大学 直拉硅单晶生长的重掺杂方法
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
WO2002092885A1 (en) * 2001-05-15 2002-11-21 Memc Electronic Materials, Inc. Electrically conductive crystal seed chuck assembly
US6797062B2 (en) * 2002-09-20 2004-09-28 Memc Electronic Materials, Inc. Heat shield assembly for a crystal puller
US7125450B2 (en) 2002-11-12 2006-10-24 Memc Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient
KR20060073854A (ko) 2004-12-24 2006-06-29 주식회사 실트론 실리콘 단결정 잉곳 성장장치용 종자결정 척
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
CN102333909A (zh) 2012-01-25
US8932550B2 (en) 2015-01-13
US20120085332A1 (en) 2012-04-12
SG188933A1 (en) 2013-04-30
SG188934A1 (en) 2013-04-30
US20110002835A1 (en) 2011-01-06
SG172436A1 (en) 2011-07-28
US20110002819A1 (en) 2011-01-06
EP2382342A1 (en) 2011-11-02
WO2010078205A1 (en) 2010-07-08
KR20110127134A (ko) 2011-11-24
US8524000B2 (en) 2013-09-03
TW201033412A (en) 2010-09-16

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