KR20110127134A - 실리콘 용융액으로부터 다결정 실리콘 잉곳을 견인하는 방법들 및 견인 어셈블리들 - Google Patents

실리콘 용융액으로부터 다결정 실리콘 잉곳을 견인하는 방법들 및 견인 어셈블리들 Download PDF

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KR20110127134A
KR20110127134A KR1020117017992A KR20117017992A KR20110127134A KR 20110127134 A KR20110127134 A KR 20110127134A KR 1020117017992 A KR1020117017992 A KR 1020117017992A KR 20117017992 A KR20117017992 A KR 20117017992A KR 20110127134 A KR20110127134 A KR 20110127134A
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KR
South Korea
Prior art keywords
ingot
mother
crystals
mother crystals
chuck
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KR1020117017992A
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English (en)
Korean (ko)
Inventor
스티븐 엘. 킴벨
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엠이엠씨 싱가포르 피티이. 엘티디.
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Publication of KR20110127134A publication Critical patent/KR20110127134A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020117017992A 2008-12-30 2009-12-23 실리콘 용융액으로부터 다결정 실리콘 잉곳을 견인하는 방법들 및 견인 어셈블리들 Withdrawn KR20110127134A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14156708P 2008-12-30 2008-12-30
US61/141,567 2008-12-30

Publications (1)

Publication Number Publication Date
KR20110127134A true KR20110127134A (ko) 2011-11-24

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ID=41667249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117017992A Withdrawn KR20110127134A (ko) 2008-12-30 2009-12-23 실리콘 용융액으로부터 다결정 실리콘 잉곳을 견인하는 방법들 및 견인 어셈블리들

Country Status (8)

Country Link
US (3) US8524000B2 (enExample)
EP (1) EP2382342A1 (enExample)
JP (1) JP2012513950A (enExample)
KR (1) KR20110127134A (enExample)
CN (1) CN102333909A (enExample)
SG (3) SG172436A1 (enExample)
TW (1) TW201033412A (enExample)
WO (1) WO2010078205A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
US20140137794A1 (en) * 2012-11-19 2014-05-22 Memc Singapore, Pte. Ltd (Uen200614797D) Method of Preparing A Directional Solidification System Furnace
US8900972B2 (en) 2012-11-19 2014-12-02 Memc Singapore Pte. Ltd. Systems and methods for producing seed bricks
US9111745B2 (en) 2012-12-31 2015-08-18 MEMC Singapore Pte., Ltd. (UEN200614794D) Methods for producing rectangular seeds for ingot growth
US20140186486A1 (en) * 2012-12-31 2014-07-03 Memc Singapore, Pte. Ltd (Uen200614797D) Apparatus For Producing Rectangular Seeds
CN106702481B (zh) * 2017-03-20 2019-01-29 宁夏佳晶科技有限公司 一种改进的多片式导模法人造蓝宝石制备工艺
CN108193263A (zh) * 2018-01-26 2018-06-22 山东大海新能源发展有限公司 一种单晶生产炉
US11958723B2 (en) * 2019-05-21 2024-04-16 Tokuyama Corporation Unloading jig, unloading method, and method for producing silicon rod
CN110777425A (zh) * 2019-11-24 2020-02-11 田达晰 带晶种升降单元的铸造硅单晶炉及硅单晶生长方法
CN116555905A (zh) * 2023-05-19 2023-08-08 西安奕斯伟材料科技股份有限公司 单晶炉和晶棒生长方法

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US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism
JP3488531B2 (ja) * 1994-12-19 2004-01-19 コマツ電子金属株式会社 多結晶棒の吊り具
US5593498A (en) 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
US5797990A (en) * 1996-02-26 1998-08-25 Ferrofluidics Corporation Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller
JP3716874B2 (ja) 1996-03-01 2005-11-16 信越半導体株式会社 種結晶保持治具
US5932007A (en) 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
JP3684769B2 (ja) * 1997-06-23 2005-08-17 信越半導体株式会社 シリコン単結晶の製造方法および保持する方法
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6015461A (en) * 1997-09-12 2000-01-18 Sumitomo Sitix Corporation Seed crystal holders, for pulling a single crystal
US6183553B1 (en) 1998-06-15 2001-02-06 Memc Electronic Materials, Inc. Process and apparatus for preparation of silicon crystals with reduced metal content
CN1109778C (zh) 2000-08-16 2003-05-28 浙江大学 直拉硅单晶生长的重掺杂方法
US6482263B1 (en) 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
WO2002092885A1 (en) 2001-05-15 2002-11-21 Memc Electronic Materials, Inc. Electrically conductive crystal seed chuck assembly
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JP4764007B2 (ja) * 2002-11-12 2011-08-31 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド ルツボの回転を利用して温度勾配を制御し単結晶シリコンを製造する方法
KR20060073854A (ko) 2004-12-24 2006-06-29 주식회사 실트론 실리콘 단결정 잉곳 성장장치용 종자결정 척
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
SG188933A1 (en) 2013-04-30
CN102333909A (zh) 2012-01-25
US20110002835A1 (en) 2011-01-06
US20120085332A1 (en) 2012-04-12
SG172436A1 (en) 2011-07-28
WO2010078205A1 (en) 2010-07-08
JP2012513950A (ja) 2012-06-21
US20110002819A1 (en) 2011-01-06
US8524000B2 (en) 2013-09-03
EP2382342A1 (en) 2011-11-02
TW201033412A (en) 2010-09-16
US8932550B2 (en) 2015-01-13
SG188934A1 (en) 2013-04-30

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Patent event date: 20110729

Patent event code: PA01051R01D

Comment text: International Patent Application

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid