TW201033412A - Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt - Google Patents
Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt Download PDFInfo
- Publication number
- TW201033412A TW201033412A TW098145615A TW98145615A TW201033412A TW 201033412 A TW201033412 A TW 201033412A TW 098145615 A TW098145615 A TW 098145615A TW 98145615 A TW98145615 A TW 98145615A TW 201033412 A TW201033412 A TW 201033412A
- Authority
- TW
- Taiwan
- Prior art keywords
- ingot
- seed crystals
- attached
- crystal
- chuck
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000000429 assembly Methods 0.000 title abstract description 3
- 230000000712 assembly Effects 0.000 title abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 claims abstract description 289
- 239000000155 melt Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000010899 nucleation Methods 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 9
- 238000011068 loading method Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 239000003708 ampul Substances 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims 4
- 239000010955 niobium Substances 0.000 claims 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 4
- 239000008187 granular material Substances 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 235000019362 perlite Nutrition 0.000 claims 1
- 239000010451 perlite Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004575 stone Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 201000003373 familial cold autoinflammatory syndrome 3 Diseases 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14156708P | 2008-12-30 | 2008-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201033412A true TW201033412A (en) | 2010-09-16 |
Family
ID=41667249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098145615A TW201033412A (en) | 2008-12-30 | 2009-12-29 | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8524000B2 (enExample) |
| EP (1) | EP2382342A1 (enExample) |
| JP (1) | JP2012513950A (enExample) |
| KR (1) | KR20110127134A (enExample) |
| CN (1) | CN102333909A (enExample) |
| SG (3) | SG172436A1 (enExample) |
| TW (1) | TW201033412A (enExample) |
| WO (1) | WO2010078205A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法（一） |
| US20140137794A1 (en) * | 2012-11-19 | 2014-05-22 | Memc Singapore, Pte. Ltd (Uen200614797D) | Method of Preparing A Directional Solidification System Furnace |
| US8900972B2 (en) | 2012-11-19 | 2014-12-02 | Memc Singapore Pte. Ltd. | Systems and methods for producing seed bricks |
| US9111745B2 (en) | 2012-12-31 | 2015-08-18 | MEMC Singapore Pte., Ltd. (UEN200614794D) | Methods for producing rectangular seeds for ingot growth |
| US20140186486A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Apparatus For Producing Rectangular Seeds |
| CN106702481B (zh) * | 2017-03-20 | 2019-01-29 | 宁夏佳晶科技有限公司 | 一种改进的多片式导模法人造蓝宝石制备工艺 |
| CN108193263A (zh) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | 一种单晶生产炉 |
| US11958723B2 (en) * | 2019-05-21 | 2024-04-16 | Tokuyama Corporation | Unloading jig, unloading method, and method for producing silicon rod |
| CN110777425A (zh) * | 2019-11-24 | 2020-02-11 | 田达晰 | 带晶种升降单元的铸造硅单晶炉及硅单晶生长方法 |
| CN116555905A (zh) * | 2023-05-19 | 2023-08-08 | 西安奕斯伟材料科技股份有限公司 | 单晶炉和晶棒生长方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4352785A (en) * | 1982-01-04 | 1982-10-05 | Western Electric Co., Inc. | Crystal grower with torque supportive collapsible pulling mechanism |
| JP3488531B2 (ja) * | 1994-12-19 | 2004-01-19 | コマツ電子金属株式会社 | 多結晶棒の吊り具 |
| US5593498A (en) | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
| US5797990A (en) * | 1996-02-26 | 1998-08-25 | Ferrofluidics Corporation | Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller |
| JP3716874B2 (ja) | 1996-03-01 | 2005-11-16 | 信越半導体株式会社 | 種結晶保持治具 |
| US5932007A (en) | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
| US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
| JP3684769B2 (ja) * | 1997-06-23 | 2005-08-17 | 信越半導体株式会社 | シリコン単結晶の製造方法および保持する方法 |
| US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
| US6015461A (en) * | 1997-09-12 | 2000-01-18 | Sumitomo Sitix Corporation | Seed crystal holders, for pulling a single crystal |
| US6183553B1 (en) | 1998-06-15 | 2001-02-06 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
| CN1109778C (zh) | 2000-08-16 | 2003-05-28 | 浙江大学 | 直拉硅单晶生长的重掺杂方法 |
| US6482263B1 (en) | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
| US6846539B2 (en) | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| WO2002092885A1 (en) | 2001-05-15 | 2002-11-21 | Memc Electronic Materials, Inc. | Electrically conductive crystal seed chuck assembly |
| US6797062B2 (en) | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
| JP4764007B2 (ja) * | 2002-11-12 | 2011-08-31 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | ルツボの回転を利用して温度勾配を制御し単結晶シリコンを製造する方法 |
| KR20060073854A (ko) | 2004-12-24 | 2006-06-29 | 주식회사 실트론 | 실리콘 단결정 잉곳 성장장치용 종자결정 척 |
| US7972703B2 (en) * | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
| JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Ｓｕｍｃｏ | Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 |
-
2009
- 2009-12-23 SG SG2011047958A patent/SG172436A1/en unknown
- 2009-12-23 US US12/646,350 patent/US8524000B2/en active Active
- 2009-12-23 JP JP2011544542A patent/JP2012513950A/ja not_active Withdrawn
- 2009-12-23 SG SG2013022926A patent/SG188934A1/en unknown
- 2009-12-23 SG SG2013022918A patent/SG188933A1/en unknown
- 2009-12-23 WO PCT/US2009/069488 patent/WO2010078205A1/en not_active Ceased
- 2009-12-23 US US12/646,303 patent/US8932550B2/en active Active
- 2009-12-23 EP EP09801360A patent/EP2382342A1/en not_active Withdrawn
- 2009-12-23 KR KR1020117017992A patent/KR20110127134A/ko not_active Withdrawn
- 2009-12-23 CN CN2009801576222A patent/CN102333909A/zh active Pending
- 2009-12-29 TW TW098145615A patent/TW201033412A/zh unknown
-
2011
- 2011-12-14 US US13/325,942 patent/US20120085332A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| SG188933A1 (en) | 2013-04-30 |
| CN102333909A (zh) | 2012-01-25 |
| US20110002835A1 (en) | 2011-01-06 |
| US20120085332A1 (en) | 2012-04-12 |
| SG172436A1 (en) | 2011-07-28 |
| WO2010078205A1 (en) | 2010-07-08 |
| JP2012513950A (ja) | 2012-06-21 |
| US20110002819A1 (en) | 2011-01-06 |
| US8524000B2 (en) | 2013-09-03 |
| EP2382342A1 (en) | 2011-11-02 |
| KR20110127134A (ko) | 2011-11-24 |
| US8932550B2 (en) | 2015-01-13 |
| SG188934A1 (en) | 2013-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201033412A (en) | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt | |
| JP3573045B2 (ja) | 高品質シリコン単結晶の製造方法 | |
| JP5344919B2 (ja) | 結晶成長のための装置及び方法 | |
| TWI493082B (zh) | 矽晶鑄錠之製造方法 | |
| JP4203603B2 (ja) | 半導体バルク多結晶の作製方法 | |
| TW200305664A (en) | Method for producing silicon single crystal and, silicon single crystal and silicon wafer | |
| KR20100013854A (ko) | 단결정 잉곳 제조장치 | |
| JP3678129B2 (ja) | 結晶成長方法 | |
| JP6719718B2 (ja) | Ｓｉインゴット結晶の製造方法及びその製造装置 | |
| TWI308605B (en) | Method for growing silicon single crystal | |
| TWI352136B (enExample) | ||
| JP2007182373A (ja) | 高品質シリコン単結晶の製造方法及びこれを用いて製造されたシリコン単結晶ウェーハ | |
| JP2001261482A (ja) | 単結晶育成方法 | |
| JP5489064B2 (ja) | シリコン単結晶の育成方法 | |
| JP5428608B2 (ja) | シリコン単結晶の育成方法 | |
| CN101037794A (zh) | 用于制造高质量硅单晶锭的方法以及由其制得的硅单晶片 | |
| JP5617812B2 (ja) | シリコン単結晶ウエーハ、エピタキシャルウエーハ、及びそれらの製造方法 | |
| JP4218460B2 (ja) | 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法 | |
| JP5262346B2 (ja) | シリコン単結晶の製造方法 | |
| JP2009023851A (ja) | シリコン単結晶製造用原料の製造方法およびシリコン単結晶の製造方法 | |
| JP6354643B2 (ja) | シリコン単結晶の製造方法 | |
| JP2001122689A (ja) | 単結晶引き上げ装置 | |
| JP2001261493A (ja) | 高品質シリコン単結晶の製造装置 | |
| JP2007290907A (ja) | シリコン単結晶及びシリコン単結晶の製造方法 |