CN102333909A - 从硅熔体拉制多晶硅晶锭的方法和拉制组件 - Google Patents

从硅熔体拉制多晶硅晶锭的方法和拉制组件 Download PDF

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Publication number
CN102333909A
CN102333909A CN2009801576222A CN200980157622A CN102333909A CN 102333909 A CN102333909 A CN 102333909A CN 2009801576222 A CN2009801576222 A CN 2009801576222A CN 200980157622 A CN200980157622 A CN 200980157622A CN 102333909 A CN102333909 A CN 102333909A
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CN
China
Prior art keywords
crystal ingot
seed crystals
seed
crystal
ingot
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Pending
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CN2009801576222A
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English (en)
Chinese (zh)
Inventor
S·L·金贝尔
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SunEdison Products Singapore Pte Ltd
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SunEdison Products Singapore Pte Ltd
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Publication of CN102333909A publication Critical patent/CN102333909A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN2009801576222A 2008-12-30 2009-12-23 从硅熔体拉制多晶硅晶锭的方法和拉制组件 Pending CN102333909A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14156708P 2008-12-30 2008-12-30
US61/141,567 2008-12-30
PCT/US2009/069488 WO2010078205A1 (en) 2008-12-30 2009-12-23 Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt

Publications (1)

Publication Number Publication Date
CN102333909A true CN102333909A (zh) 2012-01-25

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ID=41667249

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801576222A Pending CN102333909A (zh) 2008-12-30 2009-12-23 从硅熔体拉制多晶硅晶锭的方法和拉制组件

Country Status (8)

Country Link
US (3) US8524000B2 (enExample)
EP (1) EP2382342A1 (enExample)
JP (1) JP2012513950A (enExample)
KR (1) KR20110127134A (enExample)
CN (1) CN102333909A (enExample)
SG (3) SG172436A1 (enExample)
TW (1) TW201033412A (enExample)
WO (1) WO2010078205A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106702481A (zh) * 2017-03-20 2017-05-24 宁夏佳晶科技有限公司 一种改进的多片式导模法人造蓝宝石制备工艺
CN108193263A (zh) * 2018-01-26 2018-06-22 山东大海新能源发展有限公司 一种单晶生产炉
CN116555905A (zh) * 2023-05-19 2023-08-08 西安奕斯伟材料科技股份有限公司 单晶炉和晶棒生长方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
US20140137794A1 (en) * 2012-11-19 2014-05-22 Memc Singapore, Pte. Ltd (Uen200614797D) Method of Preparing A Directional Solidification System Furnace
US8900972B2 (en) 2012-11-19 2014-12-02 Memc Singapore Pte. Ltd. Systems and methods for producing seed bricks
US20140186486A1 (en) * 2012-12-31 2014-07-03 Memc Singapore, Pte. Ltd (Uen200614797D) Apparatus For Producing Rectangular Seeds
US9111745B2 (en) * 2012-12-31 2015-08-18 MEMC Singapore Pte., Ltd. (UEN200614794D) Methods for producing rectangular seeds for ingot growth
JP6776486B1 (ja) * 2019-05-21 2020-10-28 株式会社トクヤマ 搬出治具、搬出方法及びシリコンロッドの製造方法
CN110777425A (zh) * 2019-11-24 2020-02-11 田达晰 带晶种升降单元的铸造硅单晶炉及硅单晶生长方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106702481A (zh) * 2017-03-20 2017-05-24 宁夏佳晶科技有限公司 一种改进的多片式导模法人造蓝宝石制备工艺
CN106702481B (zh) * 2017-03-20 2019-01-29 宁夏佳晶科技有限公司 一种改进的多片式导模法人造蓝宝石制备工艺
CN108193263A (zh) * 2018-01-26 2018-06-22 山东大海新能源发展有限公司 一种单晶生产炉
CN116555905A (zh) * 2023-05-19 2023-08-08 西安奕斯伟材料科技股份有限公司 单晶炉和晶棒生长方法

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Publication number Publication date
US8932550B2 (en) 2015-01-13
SG188934A1 (en) 2013-04-30
KR20110127134A (ko) 2011-11-24
US20110002819A1 (en) 2011-01-06
SG172436A1 (en) 2011-07-28
US20110002835A1 (en) 2011-01-06
EP2382342A1 (en) 2011-11-02
TW201033412A (en) 2010-09-16
WO2010078205A1 (en) 2010-07-08
SG188933A1 (en) 2013-04-30
US8524000B2 (en) 2013-09-03
US20120085332A1 (en) 2012-04-12
JP2012513950A (ja) 2012-06-21

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Application publication date: 20120125