CN104955991B - 用于改进连续Czochralski方法中的晶体生长的堰 - Google Patents
用于改进连续Czochralski方法中的晶体生长的堰 Download PDFInfo
- Publication number
- CN104955991B CN104955991B CN201380071427.4A CN201380071427A CN104955991B CN 104955991 B CN104955991 B CN 104955991B CN 201380071427 A CN201380071427 A CN 201380071427A CN 104955991 B CN104955991 B CN 104955991B
- Authority
- CN
- China
- Prior art keywords
- weir
- melt
- side wall
- cap
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
对比堰 | 示例帽堰 | |
氧气(ppma) | 11.8 | 11.9 |
G(K/cm) | 49.5 | 49.5 |
加热器功率(kW) | 67 | 67 |
界面高度(cm) | 10.1 | 10.1 |
进料区最小T(K) | 1699 | 1699 |
内部腐蚀速率(mu m/hr) | 21.9 | 18.8 |
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/689,189 | 2012-11-29 | ||
US13/689,189 US9376762B2 (en) | 2012-11-29 | 2012-11-29 | Weir for improved crystal growth in a continuous Czochralski process |
PCT/US2013/071879 WO2014085391A1 (en) | 2012-11-29 | 2013-11-26 | Weir for improved crystal growth in a continuous czochralski process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104955991A CN104955991A (zh) | 2015-09-30 |
CN104955991B true CN104955991B (zh) | 2018-01-02 |
Family
ID=49780364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380071427.4A Active CN104955991B (zh) | 2012-11-29 | 2013-11-26 | 用于改进连续Czochralski方法中的晶体生长的堰 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9376762B2 (zh) |
CN (1) | CN104955991B (zh) |
MY (1) | MY170263A (zh) |
TW (1) | TWI598475B (zh) |
WO (1) | WO2014085391A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9476141B2 (en) * | 2014-07-25 | 2016-10-25 | Sunedison, Inc. | Weir for inhibiting melt contamination |
KR102338006B1 (ko) * | 2016-03-29 | 2021-12-10 | 코너 스타 리미티드 | 결정 성장 장치 및 관련 방법 |
US11414778B2 (en) * | 2019-07-29 | 2022-08-16 | Globalwafers Co., Ltd. | Production and use of dynamic state charts when growing a single crystal silicon ingot |
TW202132634A (zh) * | 2020-02-20 | 2021-09-01 | 環球晶圓股份有限公司 | 形成套裝坩堝組件之方法,坩堝模具,以及套裝坩堝 |
CN112210822A (zh) * | 2020-09-10 | 2021-01-12 | 徐州鑫晶半导体科技有限公司 | 用于单晶炉的坩埚组件和单晶炉 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1051207A (zh) * | 1989-10-26 | 1991-05-08 | 日本钢管株式会社 | 制造硅单晶设备 |
CN1165208A (zh) * | 1996-01-11 | 1997-11-19 | 三菱麻铁里亚尔硅材料株式会社 | 拉单晶方法及其实现装置 |
US5720810A (en) * | 1994-08-22 | 1998-02-24 | Mitsubishi Materials Corporation | Semiconductor single-crystal growth system |
CN1188821A (zh) * | 1996-10-15 | 1998-07-29 | Memc电子材料有限公司 | 控制重掺锑或砷的硅片中氧含量的方法和装置 |
CN102146583A (zh) * | 2010-02-10 | 2011-08-10 | 硅电子股份公司 | 从坩埚中所含的熔体拉伸由硅组成的单晶的方法及由此制得的单晶 |
US8262797B1 (en) * | 2007-03-13 | 2012-09-11 | Solaicx, Inc. | Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2245250A1 (de) | 1972-09-15 | 1974-03-21 | Philips Patentverwaltung | Vorrichtung zum ziehen von kristallen, vorzugsweise einkristallen aus der schmelze |
JP2555714B2 (ja) * | 1988-10-24 | 1996-11-20 | 三菱マテリアル株式会社 | 半導体単結晶育成装置 |
JPH03183688A (ja) * | 1989-12-11 | 1991-08-09 | Kawasaki Steel Corp | 単結晶連続引上げ装置 |
US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
-
2012
- 2012-11-29 US US13/689,189 patent/US9376762B2/en active Active
-
2013
- 2013-11-26 WO PCT/US2013/071879 patent/WO2014085391A1/en active Application Filing
- 2013-11-26 CN CN201380071427.4A patent/CN104955991B/zh active Active
- 2013-11-26 MY MYPI2015701714A patent/MY170263A/en unknown
- 2013-11-29 TW TW102143928A patent/TWI598475B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1051207A (zh) * | 1989-10-26 | 1991-05-08 | 日本钢管株式会社 | 制造硅单晶设备 |
US5720810A (en) * | 1994-08-22 | 1998-02-24 | Mitsubishi Materials Corporation | Semiconductor single-crystal growth system |
CN1165208A (zh) * | 1996-01-11 | 1997-11-19 | 三菱麻铁里亚尔硅材料株式会社 | 拉单晶方法及其实现装置 |
CN1188821A (zh) * | 1996-10-15 | 1998-07-29 | Memc电子材料有限公司 | 控制重掺锑或砷的硅片中氧含量的方法和装置 |
US8262797B1 (en) * | 2007-03-13 | 2012-09-11 | Solaicx, Inc. | Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process |
CN102146583A (zh) * | 2010-02-10 | 2011-08-10 | 硅电子股份公司 | 从坩埚中所含的熔体拉伸由硅组成的单晶的方法及由此制得的单晶 |
Also Published As
Publication number | Publication date |
---|---|
TWI598475B (zh) | 2017-09-11 |
WO2014085391A1 (en) | 2014-06-05 |
US20140144372A1 (en) | 2014-05-29 |
US9376762B2 (en) | 2016-06-28 |
MY170263A (en) | 2019-07-15 |
CN104955991A (zh) | 2015-09-30 |
TW201432100A (zh) | 2014-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181220 Address after: 17th Floor, Global Trade Plaza, 1 West Austin Road, Kowloon, China Patentee after: SUNEDISON, Inc. Address before: American Missouri Patentee before: SOLAICX, Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230810 Address after: Room 205, West Zone, 2nd Floor, No. 707 Zhangyang Road, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: GCL New (Shanghai) Photovoltaic Technology Co.,Ltd. Address before: 17th Floor, Global Trade Plaza, 1 West Austin Road, Kowloon, China Patentee before: SUNEDISON, Inc. |