JP2012513950A5 - - Google Patents
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- Publication number
- JP2012513950A5 JP2012513950A5 JP2011544542A JP2011544542A JP2012513950A5 JP 2012513950 A5 JP2012513950 A5 JP 2012513950A5 JP 2011544542 A JP2011544542 A JP 2011544542A JP 2011544542 A JP2011544542 A JP 2011544542A JP 2012513950 A5 JP2012513950 A5 JP 2012513950A5
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- silicon
- seed crystal
- silicon melt
- mounting bracket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 claims 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 31
- 229910052710 silicon Inorganic materials 0.000 claims 31
- 239000010703 silicon Substances 0.000 claims 31
- 238000000034 method Methods 0.000 claims 16
- 230000002093 peripheral effect Effects 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000000945 filler Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14156708P | 2008-12-30 | 2008-12-30 | |
| US61/141,567 | 2008-12-30 | ||
| PCT/US2009/069488 WO2010078205A1 (en) | 2008-12-30 | 2009-12-23 | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012513950A JP2012513950A (ja) | 2012-06-21 |
| JP2012513950A5 true JP2012513950A5 (enExample) | 2012-12-27 |
Family
ID=41667249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011544542A Withdrawn JP2012513950A (ja) | 2008-12-30 | 2009-12-23 | シリコン溶融物から多結晶シリコンインゴットを引き上げるための方法及び引上アセンブリ |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8524000B2 (enExample) |
| EP (1) | EP2382342A1 (enExample) |
| JP (1) | JP2012513950A (enExample) |
| KR (1) | KR20110127134A (enExample) |
| CN (1) | CN102333909A (enExample) |
| SG (3) | SG188933A1 (enExample) |
| TW (1) | TW201033412A (enExample) |
| WO (1) | WO2010078205A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法（一） |
| US8900972B2 (en) | 2012-11-19 | 2014-12-02 | Memc Singapore Pte. Ltd. | Systems and methods for producing seed bricks |
| US20140137794A1 (en) * | 2012-11-19 | 2014-05-22 | Memc Singapore, Pte. Ltd (Uen200614797D) | Method of Preparing A Directional Solidification System Furnace |
| US9111745B2 (en) | 2012-12-31 | 2015-08-18 | MEMC Singapore Pte., Ltd. (UEN200614794D) | Methods for producing rectangular seeds for ingot growth |
| US20140186486A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Apparatus For Producing Rectangular Seeds |
| CN106702481B (zh) * | 2017-03-20 | 2019-01-29 | 宁夏佳晶科技有限公司 | 一种改进的多片式导模法人造蓝宝石制备工艺 |
| CN108193263A (zh) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | 一种单晶生产炉 |
| US11958723B2 (en) * | 2019-05-21 | 2024-04-16 | Tokuyama Corporation | Unloading jig, unloading method, and method for producing silicon rod |
| CN110777425A (zh) * | 2019-11-24 | 2020-02-11 | 田达晰 | 带晶种升降单元的铸造硅单晶炉及硅单晶生长方法 |
| CN116555905A (zh) * | 2023-05-19 | 2023-08-08 | 西安奕斯伟材料科技股份有限公司 | 单晶炉和晶棒生长方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4352785A (en) * | 1982-01-04 | 1982-10-05 | Western Electric Co., Inc. | Crystal grower with torque supportive collapsible pulling mechanism |
| JP3488531B2 (ja) * | 1994-12-19 | 2004-01-19 | コマツ電子金属株式会社 | 多結晶棒の吊り具 |
| US5593498A (en) | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
| US5797990A (en) * | 1996-02-26 | 1998-08-25 | Ferrofluidics Corporation | Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller |
| JP3716874B2 (ja) * | 1996-03-01 | 2005-11-16 | 信越半導体株式会社 | 種結晶保持治具 |
| US5932007A (en) | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
| US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
| JP3684769B2 (ja) * | 1997-06-23 | 2005-08-17 | 信越半導体株式会社 | シリコン単結晶の製造方法および保持する方法 |
| US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
| US6015461A (en) * | 1997-09-12 | 2000-01-18 | Sumitomo Sitix Corporation | Seed crystal holders, for pulling a single crystal |
| US6183553B1 (en) | 1998-06-15 | 2001-02-06 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
| CN1109778C (zh) | 2000-08-16 | 2003-05-28 | 浙江大学 | 直拉硅单晶生长的重掺杂方法 |
| US6482263B1 (en) | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
| WO2002059400A2 (en) | 2001-01-26 | 2002-08-01 | Memc Electronic Materials, Inc. | Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| WO2002092885A1 (en) | 2001-05-15 | 2002-11-21 | Memc Electronic Materials, Inc. | Electrically conductive crystal seed chuck assembly |
| US6797062B2 (en) * | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
| EP1560951B1 (en) * | 2002-11-12 | 2010-10-27 | MEMC Electronic Materials, Inc. | Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
| KR20060073854A (ko) | 2004-12-24 | 2006-06-29 | 주식회사 실트론 | 실리콘 단결정 잉곳 성장장치용 종자결정 척 |
| US7972703B2 (en) * | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
| JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Ｓｕｍｃｏ | Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 |
-
2009
- 2009-12-23 SG SG2013022918A patent/SG188933A1/en unknown
- 2009-12-23 KR KR1020117017992A patent/KR20110127134A/ko not_active Withdrawn
- 2009-12-23 US US12/646,350 patent/US8524000B2/en active Active
- 2009-12-23 WO PCT/US2009/069488 patent/WO2010078205A1/en not_active Ceased
- 2009-12-23 CN CN2009801576222A patent/CN102333909A/zh active Pending
- 2009-12-23 EP EP09801360A patent/EP2382342A1/en not_active Withdrawn
- 2009-12-23 JP JP2011544542A patent/JP2012513950A/ja not_active Withdrawn
- 2009-12-23 US US12/646,303 patent/US8932550B2/en active Active
- 2009-12-23 SG SG2011047958A patent/SG172436A1/en unknown
- 2009-12-23 SG SG2013022926A patent/SG188934A1/en unknown
- 2009-12-29 TW TW098145615A patent/TW201033412A/zh unknown
-
2011
- 2011-12-14 US US13/325,942 patent/US20120085332A1/en not_active Abandoned
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