JP2012507860A5 - - Google Patents

Download PDF

Info

Publication number
JP2012507860A5
JP2012507860A5 JP2011534507A JP2011534507A JP2012507860A5 JP 2012507860 A5 JP2012507860 A5 JP 2012507860A5 JP 2011534507 A JP2011534507 A JP 2011534507A JP 2011534507 A JP2011534507 A JP 2011534507A JP 2012507860 A5 JP2012507860 A5 JP 2012507860A5
Authority
JP
Japan
Prior art keywords
electrode assembly
lower electrode
edge ring
assembly according
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011534507A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012507860A (ja
JP5743895B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/005857 external-priority patent/WO2010062345A2/en
Publication of JP2012507860A publication Critical patent/JP2012507860A/ja
Publication of JP2012507860A5 publication Critical patent/JP2012507860A5/ja
Application granted granted Critical
Publication of JP5743895B2 publication Critical patent/JP5743895B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011534507A 2008-10-31 2009-10-29 プラズマ処理チャンバの下側電極アセンブリ Active JP5743895B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19315108P 2008-10-31 2008-10-31
US61/193,151 2008-10-31
PCT/US2009/005857 WO2010062345A2 (en) 2008-10-31 2009-10-29 Lower electrode assembly of plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015090990A Division JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ

Publications (3)

Publication Number Publication Date
JP2012507860A JP2012507860A (ja) 2012-03-29
JP2012507860A5 true JP2012507860A5 (enExample) 2012-12-13
JP5743895B2 JP5743895B2 (ja) 2015-07-01

Family

ID=42130005

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011534507A Active JP5743895B2 (ja) 2008-10-31 2009-10-29 プラズマ処理チャンバの下側電極アセンブリ
JP2015090990A Active JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ
JP2016142436A Active JP6385397B2 (ja) 2008-10-31 2016-07-20 プラズマ処理チャンバの下側電極アセンブリ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015090990A Active JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ
JP2016142436A Active JP6385397B2 (ja) 2008-10-31 2016-07-20 プラズマ処理チャンバの下側電極アセンブリ

Country Status (7)

Country Link
US (1) US9412555B2 (enExample)
EP (1) EP2342951B1 (enExample)
JP (3) JP5743895B2 (enExample)
KR (3) KR101624123B1 (enExample)
CN (1) CN102187741B (enExample)
TW (1) TWI496511B (enExample)
WO (1) WO2010062345A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US8677586B2 (en) * 2012-04-04 2014-03-25 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
US9070536B2 (en) * 2012-04-24 2015-06-30 Applied Materials, Inc. Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9502279B2 (en) 2013-06-28 2016-11-22 Lam Research Corporation Installation fixture having a micro-grooved non-stick surface
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP2015115421A (ja) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP6540022B2 (ja) * 2014-12-26 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TWI613753B (zh) * 2015-02-16 2018-02-01 靜電吸附承盤側壁之改良密封件
CN106711061B (zh) * 2015-11-18 2019-11-29 北京北方华创微电子装备有限公司 承载装置及反应腔室
JP6545613B2 (ja) * 2015-12-28 2019-07-17 クアーズテック株式会社 フォーカスリング
JP3210105U (ja) * 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated ユニバーサルプロセスキット
US10256003B2 (en) * 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
CN110462781B (zh) * 2017-03-31 2022-03-11 玛特森技术公司 用于等离子体处理设备的基座组件
US11101692B2 (en) * 2017-04-07 2021-08-24 Sew-Eurodrive Gmbh & Co. Kg Method for producing a system for inductively transmitting energy to a mobile part, and device for carrying out the method
EP3852137A1 (en) * 2017-07-24 2021-07-21 LAM Research Corporation Moveable edge ring design
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN116884823A (zh) * 2017-12-15 2023-10-13 朗姆研究公司 等离子体室中使用的环形结构和系统
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件,其安装方法及等离子体处理装置
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN112466740A (zh) * 2020-11-30 2021-03-09 上海诺硕电子科技有限公司 等离子体处理晶圆用载具及晶圆处理设备
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
US12469733B2 (en) 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
EP4463883A4 (en) * 2022-01-11 2025-11-12 Lam Res Corp PERIPHERAL RING PLASMA RADICAL SEAL BARRIER

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH08316299A (ja) * 1995-03-14 1996-11-29 Souzou Kagaku:Kk 静電チャック
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2003152063A (ja) * 2001-11-09 2003-05-23 Applied Materials Inc 静電チャック及び半導体製造装置
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4082924B2 (ja) * 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP2004296553A (ja) * 2003-03-25 2004-10-21 Ngk Insulators Ltd 半導体製造装置用部材
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7338578B2 (en) * 2004-01-20 2008-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
WO2005074450A2 (en) * 2004-01-30 2005-08-18 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
US20060043067A1 (en) 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP4674512B2 (ja) 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置

Similar Documents

Publication Publication Date Title
JP2012507860A5 (enExample)
WO2010062345A3 (en) Lower electrode assembly of plasma processing chamber
CN107195578B (zh) 静电卡盘
TW526558B (en) Focus ring and plasma processing apparatus for semiconductor process
TWI593011B (zh) 用於電漿處理室之邊緣環組件及其製造方法
US9608549B2 (en) Electrostatic chuck
JP6662780B2 (ja) 低摩擦パッドを有する物理的気相堆積(pvd)ターゲット
EP2015343A3 (en) High temperature cathode for plasma etching
TWI538091B (zh) 具有傾斜之側邊的靜電夾盤
EP1918978A3 (en) Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
EP1158568A3 (en) Plasma assisted semiconductor substrate processing chamber
JP2011003730A (ja) プラズマ処理装置用シリコンリング
KR20120007717U (ko) 반도체 제조 챔버들에서의 링 어셈블리의 수명 향상
WO2006047382A3 (en) Solderable top metal for sic device
US20130206070A1 (en) Deposition ring
WO2001004945A1 (en) Electrostatic chuck and its manufacturing method
JP6400273B2 (ja) 静電チャック装置
KR20160126884A (ko) 유동 격리기 링을 포함하는 프로세스 키트
US11764099B2 (en) Patterned chuck for double-sided processing
JP2018518060A5 (enExample)
TW201830551A (zh) 混合的基板載具
EP4029053B1 (en) Electrostatic puck and method of manufacture
JP6335675B2 (ja) マスク及び有機発光デバイスの製造方法
KR101286724B1 (ko) 분할 엠보싱 구조 정전척
CN106548969B (zh) 夹持装置及半导体加工设备