JP6662780B2 - 低摩擦パッドを有する物理的気相堆積(pvd)ターゲット - Google Patents
低摩擦パッドを有する物理的気相堆積(pvd)ターゲット Download PDFInfo
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- JP6662780B2 JP6662780B2 JP2016541544A JP2016541544A JP6662780B2 JP 6662780 B2 JP6662780 B2 JP 6662780B2 JP 2016541544 A JP2016541544 A JP 2016541544A JP 2016541544 A JP2016541544 A JP 2016541544A JP 6662780 B2 JP6662780 B2 JP 6662780B2
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- 238000005240 physical vapour deposition Methods 0.000 title description 16
- 239000000463 material Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 21
- 238000007373 indentation Methods 0.000 claims description 4
- 230000001143 conditioned effect Effects 0.000 claims 2
- 238000007789 sealing Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- 229920010741 Ultra High Molecular Weight Polyethylene (UHMWPE) Polymers 0.000 description 1
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (10)
- 基板処理チャンバ向けのターゲットアセンブリであって、
中心部分および支持部分を含む第1の面を備える板であって、前記中心部分がターゲットソース材料を支持するように構成される板と、
前記支持部分内に形成された複数の凹みと、
前記複数の凹み内に部分的に配置された複数のパッドとを備え、
前記複数のパッドがそれぞれ、前記パッドを通って配置された締め具を介して前記支持部分に固定され、
前記複数のパッドがそれぞれ、支承表面と、前記パッドの本体内へ部分的に延びる第1の直径を有する皿穴付き凹みと、前記第1の直径より小さい第2の直径を有する貫通孔とを含み、
前記締め具のヘッドが、前記支承表面の下で前記パッドの前記皿穴付き凹み内に配置されたものであり、
前記複数のパッドが、前記複数の凹みの対応する1つの中へ圧入されて、前記凹みとの干渉を提供し、
前記凹みとの干渉の部分が、前記凹みのエッジに沿って0.15mmである、ターゲットアセンブリ。 - 前記複数の凹みが、前記板の周りで円周方向に隔置される、請求項1に記載のターゲットアセンブリ。
- 前記複数の凹みは、互いに同じサイズである、請求項1に記載のターゲットアセンブリ。
- 前記締め具が、前記皿穴付き凹みおよび貫通孔内に配置される、請求項1に記載のターゲットアセンブリ。
- 前記締め具のシャフトが、前記パッドを前記板に固定するように前記貫通孔を通って配置される、請求項4に記載のターゲットアセンブリ。
- 前記複数のパッドがそれぞれ、設置表面および支承表面を備え、前記設置表面が凹みの底面上に支持されるとき、前記支承表面が、前記板の前記第1の面の上に隔置される、請求項1から5までのいずれか1項に記載のターゲットアセンブリ。
- 前記支承表面が、前記第1の面の上に0.05mm〜1mmだけ隔置される、請求項6に記載のターゲットアセンブリ。
- 前記板が、溝を含み、
前記溝は、前記支持部分を前記溝から径方向に外向きの大気側および前記溝から径方向に内向きの真空側に分離する、請求項1から5までのいずれか1項に記載のターゲットアセンブリ。 - 基板処理チャンバ向けのターゲットアセンブリであって、
中心部分および支持部分を含む第1の面を備える板であって、前記中心部分がターゲットソース材料を支持するように構成される板と、
前記板内に形成された溝であって、前記支持部分を前記溝から径方向に外向きの大気側および前記溝から径方向に内向きの真空側に分離する溝と、
前記支持部分の前記大気側内に形成され、前記板の周りで円周方向に隔置された複数の凹みと、
前記板の前記第1の面の上に支承表面が隔置されるように前記複数の凹み内に部分的に配置された複数の摩擦低減パッドとを備え、
前記複数の摩擦低減パッドがそれぞれ、前記摩擦低減パッドを通って配置された締め具を介して前記支持部分に固定され、
前記複数の摩擦低減パッドがそれぞれ、支承表面と、前記摩擦低減パッドの本体内へ部分的に延びる第1の直径を有する皿穴付き凹みと、前記第1の直径より小さい第2の直径を有する貫通孔とを含み、
前記締め具のヘッドが、前記支承表面の下で前記パッドの前記皿穴付き凹み内に配置されたものであり、
前記複数のパッドが、前記複数の凹みの対応する1つの中へ圧入されて、前記凹みとの干渉を提供し、
前記凹みとの干渉の部分が、前記凹みのエッジに沿って0.15mmである、ターゲットアセンブリ。 - 前記複数の摩擦低減パッドが、前記複数の凹みの対応する1つの中へ圧入されたもの、または前記摩擦低減パッドを通って配置された締め具を介して各凹み内で前記支持部分に固定されたものの少なくとも1つである、請求項9に記載のターゲットアセンブリ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361917630P | 2013-12-18 | 2013-12-18 | |
US61/917,630 | 2013-12-18 | ||
US14/182,831 | 2014-02-18 | ||
US14/182,831 US9960021B2 (en) | 2013-12-18 | 2014-02-18 | Physical vapor deposition (PVD) target having low friction pads |
PCT/US2014/065023 WO2015094515A1 (en) | 2013-12-18 | 2014-11-11 | Physical vapor deposition (pvd) target having low friction pads |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017503923A JP2017503923A (ja) | 2017-02-02 |
JP2017503923A5 JP2017503923A5 (ja) | 2017-12-14 |
JP6662780B2 true JP6662780B2 (ja) | 2020-03-11 |
Family
ID=53369351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016541544A Active JP6662780B2 (ja) | 2013-12-18 | 2014-11-11 | 低摩擦パッドを有する物理的気相堆積(pvd)ターゲット |
Country Status (6)
Country | Link |
---|---|
US (1) | US9960021B2 (ja) |
JP (1) | JP6662780B2 (ja) |
KR (1) | KR102208950B1 (ja) |
CN (2) | CN109346395A (ja) |
TW (1) | TWI648419B (ja) |
WO (1) | WO2015094515A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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USD836572S1 (en) | 2016-09-30 | 2018-12-25 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
USD851613S1 (en) | 2017-10-05 | 2019-06-18 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
USD868124S1 (en) | 2017-12-11 | 2019-11-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
USD877101S1 (en) | 2018-03-09 | 2020-03-03 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
USD888903S1 (en) | 2018-12-17 | 2020-06-30 | Applied Materials, Inc. | Deposition ring for physical vapor deposition chamber |
US11961723B2 (en) | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
USD908645S1 (en) | 2019-08-26 | 2021-01-26 | Applied Materials, Inc. | Sputtering target for a physical vapor deposition chamber |
USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
US11618943B2 (en) * | 2020-10-23 | 2023-04-04 | Applied Materials, Inc. | PVD target having self-retained low friction pads |
USD940765S1 (en) | 2020-12-02 | 2022-01-11 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
KR102446965B1 (ko) * | 2021-01-28 | 2022-09-26 | (주)지오엘리먼트 | 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법 |
USD1007449S1 (en) | 2021-05-07 | 2023-12-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
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2014
- 2014-02-18 US US14/182,831 patent/US9960021B2/en active Active
- 2014-11-11 CN CN201811141793.3A patent/CN109346395A/zh active Pending
- 2014-11-11 KR KR1020167019316A patent/KR102208950B1/ko active IP Right Grant
- 2014-11-11 JP JP2016541544A patent/JP6662780B2/ja active Active
- 2014-11-11 WO PCT/US2014/065023 patent/WO2015094515A1/en active Application Filing
- 2014-11-11 CN CN201480061815.9A patent/CN105874565A/zh active Pending
- 2014-12-04 TW TW103142211A patent/TWI648419B/zh active
Also Published As
Publication number | Publication date |
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CN109346395A (zh) | 2019-02-15 |
US20150170888A1 (en) | 2015-06-18 |
JP2017503923A (ja) | 2017-02-02 |
TW201525172A (zh) | 2015-07-01 |
TWI648419B (zh) | 2019-01-21 |
KR20160101080A (ko) | 2016-08-24 |
CN105874565A (zh) | 2016-08-17 |
US9960021B2 (en) | 2018-05-01 |
WO2015094515A1 (en) | 2015-06-25 |
KR102208950B1 (ko) | 2021-01-28 |
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