CN107195578B - 静电卡盘 - Google Patents
静电卡盘 Download PDFInfo
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- CN107195578B CN107195578B CN201710580505.3A CN201710580505A CN107195578B CN 107195578 B CN107195578 B CN 107195578B CN 201710580505 A CN201710580505 A CN 201710580505A CN 107195578 B CN107195578 B CN 107195578B
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- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims description 10
- 229920006169 Perfluoroelastomer Polymers 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 239000013013 elastic material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000741 silica gel Substances 0.000 description 7
- 229910002027 silica gel Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000005439 thermosphere Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H01J2237/2001—Maintaining constant desired temperature
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- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2005—Seal mechanisms
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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Abstract
本发明提供一种静电卡盘,其包括底座、设置在所该底座上的加热层及设置在该加热层上的绝缘层,在底座与绝缘层之间,且环绕在加热层的外周壁上设置有环状保护部件,该环状保护部件采用抗等离子体腐蚀的弹性材料制作,且环状保护部件在底座与绝缘层之间处于压缩变形状态,以实现加热层与等离子体相隔离。本发明提供的静电卡盘,其环状保护部件具有较高的抗等离子体腐蚀性,从而可以增强对加热层的保护作用,而且该环状保护部件可以实现定期更换,且不会损坏加热层,从而延长了静电卡盘的使用寿命。
Description
技术领域
本发明涉及半导体制造技术领域,具体地,涉及一种静电卡盘。
背景技术
在集成电路(IC)的制造工艺过程中,特别是等离子刻蚀(ETCH)工艺中,为了固定、支撑晶片(Wafer),避免晶片在工艺过程中出现移动或错位现象,同时实现晶片的温度控制,往往使用静电卡盘(Electro Static Chuck,ESC)。
图1为现有的静电卡盘的结构图。如图1所示,静电卡盘包括底座1、设置在底座1上的加热层2和设置在加热层2上的绝缘层3,并且,在加热层2的外周壁上,涂覆有硅胶材料4,该硅胶材料4位于底座1和绝缘层3之间,用以保护加热层2不被等离子体刻蚀。
上述静电卡盘在实际应用中不可避免地存在以下问题:
硅胶材料4被等离子体刻蚀之后会变薄,甚至完全消失,对加热层2的保护作用失效,使加热层2直接暴露于等离子体环境中,很容易被腐蚀并产生颗粒,从而降低晶片质量。由于硅胶材料4采用涂覆的方式附着在加热层2的外周壁上,如果要重新涂胶,必须先把残留的硅胶材料去除,再将新的硅胶材料重新涂覆上去,这不仅加工困难,而且容易损伤加热层2,造成静电卡盘损坏。因此,常用作法是,当硅胶材料4被等离子体刻蚀变薄至一定程度之后,不再使用该静电卡盘,整体更换为新的静电卡盘。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一,提出了一种静电卡盘,其环状保护部件可拆卸地环绕设置在所述加热层的外周壁上,可以直接单独更换,且不会损坏加热层,从而延长了静电卡盘的使用寿命。
为实现本发明的目的而提供一种静电卡盘,包括底座、设置在所述底座上的加热层及设置在所述加热层上的绝缘层,所述加热层的外径小于所述底座的外径和所述绝缘层的外径,还包括环状保护部件,所述环状保护部件可拆卸地环绕设置在所述加热层的外周壁上。
优选的,所述环状保护部件具有弹性,且在所述底座与所述绝缘层之间处于压缩变形状态,以实现所述加热层与等离子体相隔离。
优选的,所述环状保护部件在处于未压缩变形状态时,在所述静电卡盘的轴向上的截面形状为矩形、正方形、圆形或者椭圆形。
优选的,所述截面形状为采用圆角过渡的矩形或者正方形。
优选的,所述圆角的半径的取值范围在1~3mm。
优选的,所述截面形状为圆形;
在所述加热层的外周壁、所述底座的上表面和所述绝缘层的下表面之间形成的环形空间在所述静电卡盘的轴向上的高度小于所述截面形状的直径的90%。
优选的,所述截面形状为矩形或者正方形;
所述环状保护部件的外环面为凹面。
优选的,所述环状保护部件在径向上的最小厚度大于或者等于所述环状保护部件在径向上的整体厚度的80%。
优选的,所述凹面包括弧形凹面,或者倾斜的平面,或者曲折面;所述曲折面由沿竖直方向连接的至少两个平面组成,且相邻的两个平面之间形成夹角。
优选的,所述环状保护件包括环状本体,所述环状本体设置在所述底座与所述绝缘层之间,且环绕在所述加热层的外周壁上,并且所述环状本体在所述底座与所述绝缘层之间处于压缩变形状态;
在所述环状本体的外周壁上形成有至少一个环状延伸部,所述环状延伸部叠置在所述绝缘层的外周壁上,且所述环状延伸部的上端低于所述绝缘层的上表面;和/或所述环状延伸部叠置在所述底座的外周壁上。
优选的,所述环状保护件的材料包括全氟橡胶。
本发明具有以下有益效果:
本发明提供的静电卡盘,其通过将环状保护部件可拆卸地环绕设置在加热层的外周壁上,可以直接单独更换,且在更换过程中不会损坏加热层,从而延长了静电卡盘的使用寿命。
作为一个优选方案,上述环状保护部件具有弹性,且在底座与绝缘层之间处于压缩变形状态,这可以起到对环状保护部件分别与底座与绝缘层之间的间隙进行密封的作用,从而可以实现加热层与等离子体相隔离,进而避免加热层因直接暴露于等离子体环境中,造成被腐蚀并产生颗粒,从而提高了晶片质量。
附图说明
图1为现有的静电卡盘的结构图;
图2为本发明第一实施例提供的静电卡盘的局部剖视图;
图3为本发明第一实施例提供的静电卡盘的俯视剖视图;
图4为本发明第一实施例的第一个变形实施例提供的静电卡盘的局部剖视图;
图5为本发明第一实施例的第二个变形实施例提供的静电卡盘的局部剖视图;
图6为本发明第一实施例的第三个变形实施例提供的静电卡盘的局部剖视图;
图7为本发明第一实施例的第四个变形实施例提供的静电卡盘的局部剖视图;
图8为本发明第一实施例的第五变形实施例提供的静电卡盘的局部剖视图;
图9为本发明第二实施例提供的静电卡盘的局部剖视图;
图10为本发明第二实施例的第一个变形实施例提供的静电卡盘的局部剖视图;
图11为本发明第二实施例的第二个变形实施例提供的静电卡盘的局部剖视图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图来对本发明提供的静电卡盘进行详细描述。
请一并参阅图2和图3,静电卡盘包括底座5、设置在该底座5上的加热层6及设置在该加热层6上的绝缘层7,其中,在加热层6中设置有加热元件,用以提供热量,并通过绝缘层7传递至晶片。绝缘层7采用诸如Al2O3、AlN等的陶瓷或者其他绝缘材料制作。并且,在绝缘层7中设置有直流电极层,该直流电极层与置于绝缘层7上的晶片之间产生静电引力,从而达到固定晶片的目的。
并且,静电卡盘还包括环状保护部件8,该环状保护部件8可拆卸地环绕设置在加热层6的外周壁上。所谓可拆卸,是指环状保护部件8可以直接单独更换,且在更换过程中不会损坏加热层,进而延长了静电卡盘的使用寿命。
优选的,为了更好的起到保护环状保护部件8内侧的加热曾6不被等离子体刻蚀的作用,环状保护部件8具有弹性,且在底座5与绝缘层7之间处于压缩变形状态,以实现加热层6与等离子体相隔离。利用环状保护部件8的弹性,可以在实现可拆卸的同时,通过使环状保护部件8在底座5与绝缘层7之间处于压缩变形状态,即,利用底座5和绝缘层7挤压位于二者之间的环状保护部件8,使之产生压缩变形,可以使该环状保护部件8能够与底座5和绝缘层7紧密接触,从而可以起到密封的作用,进而可以实现加热层6与等离子体相隔离,避免加热层6因直接暴露于等离子体环境中,造成被腐蚀并产生颗粒,从而提高了晶片质量。
优选的,上述环状保护部件8的材料包括全氟橡胶,该全氟橡胶不仅具有弹性,而且通过在橡胶中引入氟原子,使全氟橡胶具有优良的耐热性、抗氧化性、耐腐蚀性和耐老化性等。
在本实施例中,环状保护部件8在处于未压缩变形状态时,在静电卡盘的轴向上的截面形状为矩形,如图2所示。优选的,该截面形状采用圆角81过渡,以便于安装。进一步优选的,该圆角81的半径的取值范围在1~3mm,以便于安装。当然,在实际应用中,上述截面形状还可以为正方形。
在上述截面形状为矩形或正方形的基础上,优选的,还可以使环状保护部件8的外环面为凹面,这有利于避免环形保护部件8与周边零件接触。具体地,如图4所示,该凹面包括弧形凹面82。或者,如图5所示,上述凹面为倾斜的平面83,在本实施例中,平面83朝下倾斜。当然,在实际应用中,平面83也可以朝上倾斜。
在上述截面形状为矩形或正方形的基础上,如图6所示,上述凹面还可以为曲折面84,该曲折面84由沿竖直方向连接的两个平面(841,842)组成,且在两个平面(841,842)之间形成夹角,该夹角可以为锐角、直角或钝角。或者,如图7所示,上述凹面为曲折面85,该曲折面85也可以由沿竖直方向连接的三个平面(851,852,853)组成,且相邻的两个平面之间形成夹角,该夹角可以为锐角、直角或钝角。当然,在实际应用中,上述曲折面还可以由四个或者五个以上的平面组成。
在环状保护部件8的外环面为凹面的基础上,优选的,环状保护部件8在径向上的最小厚度大于或者等于环状保护部件8在径向上的整体厚度的80%,以保证环状保护部件8的密封效果。
需要说明的是,在本实施例中,环状保护部件8在处于未压缩变形状态时,在静电卡盘的轴向上的截面形状为矩形,但是,本发明并不局限于此,在实际应用中,上述截面形状还可以为圆形。
当上述截面形状为圆形时,优选的,在加热层6的外周壁、底座5的上表面和绝缘层7的下表面之间形成的环形空间在静电卡盘的轴向上的高度小于上述截面形状的直径的90%,以保证其密封效果。另外,在实际应用中,上述环形空间在径向方向上的长度应适当大于环状保护部件8在处于未压缩变形状态时的直径,以保证环状保护部件8在发生压缩变形时不会超出绝缘层7或底座5的外边缘。
图9为本发明第二实施例提供的静电卡盘的局部剖视图。请参阅图9,本实施例提供的静电卡盘与上述第一实施例相比,其区别在于:增设了环状延伸部,以进一步提高环状保护件的密封效果。
具体地,在本实施中,环状保护件包括环状本体10,该环状本体10设置在底座5与绝缘层7之间,且环绕在加热层6的外周壁上,并且环状本体10在底座5与绝缘层7之间处于压缩变形状态,以起到对环状本体10分别与底座5与绝缘层7之间的间隙进行密封的作用,从而可以实现加热层6与等离子体相隔离,进而避免加热层6因直接暴露于等离子体环境中,造成被腐蚀并产生颗粒,从而提高了晶片质量。
并且,在环状本体10的外周壁上形成环状延伸部11,该环状延伸部11叠置在绝缘层7的外周壁上,以增强对环状本体10与绝缘层7之间的间隙的密封作用。并且,环状延伸部11的上端低于绝缘层7的上表面,以避免在进行工艺时,对绝缘层7上的晶片产生影响。环状延伸部11叠置在底座的5外周壁上的长度可以为1~10mm。
或者,如图10所示,在环状本体10的外周壁上还形成有环状延伸部12,该环状延伸部12分别叠置在绝缘层7和底座5的外周壁上,以增强对环状本体10分别与底座5与绝缘层7之间的间隙进行密封的作用。
或者,如图11所示,在环状本体10的外周壁上形成环状延伸部13,该环状延伸部13叠置在底座的5外周壁上,以增强对环状本体10与底座5之间的间隙的密封作用。环状延伸部13叠置在底座的5外周壁上的长度可以为1~10mm。
由上可知,可以在环状本体10的外周壁上形成有至少一个环状延伸部,该环状延伸部可以单独叠置在绝缘层7的外周壁上,或者可以单独叠置在底座5的外周壁上,或者还可以分别叠置在绝缘层7的外周壁上和底座5的外周壁上。
综上所述,本发明上述各个实施例提供的静电卡盘,其通过将环状保护部件可拆卸地环绕设置在加热层的外周壁上,可以直接单独更换环状保护部件,且在更换过程中不会损坏加热层,从而延长了静电卡盘的使用寿命。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (11)
1.一种静电卡盘,包括底座、设置在所述底座上的加热层及设置在所述加热层上的绝缘层,所述加热层的外径小于所述底座的外径和所述绝缘层的外径,其特征在于,还包括环状保护部件,所述环状保护部件可拆卸地环绕设置在所述加热层的外周壁上;所述环状保护部件可以直接单独更换,且不会损坏所述加热层。
2.根据权利要求1所述的静电卡盘,其特征在于,所述环状保护部件具有弹性,且在所述底座与所述绝缘层之间处于压缩变形状态,以实现所述加热层与等离子体相隔离。
3.根据权利要求2所述的静电卡盘,其特征在于,所述环状保护部件在处于未压缩变形状态时,在所述静电卡盘的轴向上的截面形状为矩形、正方形、圆形或者椭圆形。
4.根据权利要求3所述的静电卡盘,其特征在于,所述截面形状为采用圆角过渡的矩形或者正方形。
5.根据权利要求4所述的静电卡盘,其特征在于,所述圆角的半径的取值范围在1~3mm。
6.根据权利要求3所述的静电卡盘,其特征在于,所述截面形状为圆形;
在所述加热层的外周壁、所述底座的上表面和所述绝缘层的下表面之间形成的环形空间在所述静电卡盘的轴向上的高度小于所述截面形状的直径的90%。
7.根据权利要求3所述的静电卡盘,其特征在于,所述截面形状为矩形或者正方形;
所述环状保护部件的外环面为凹面。
8.根据权利要求7所述的静电卡盘,其特征在于,所述环状保护部件在径向上的最小厚度大于或者等于所述环状保护部件在径向上的整体厚度的80%。
9.根据权利要求7所述的静电卡盘,其特征在于,所述凹面包括弧形凹面,或者倾斜的平面,或者曲折面;所述曲折面由沿竖直方向连接的至少两个平面组成,且相邻的两个平面之间形成夹角。
10.根据权利要求1所述的静电卡盘,其特征在于,所述环状保护件包括环状本体,所述环状本体设置在所述底座与所述绝缘层之间,且环绕在所述加热层的外周壁上,并且所述环状本体在所述底座与所述绝缘层之间处于压缩变形状态;
在所述环状本体的外周壁上形成有至少一个环状延伸部,所述环状延伸部叠置在所述绝缘层的外周壁上,且所述环状延伸部的上端低于所述绝缘层的上表面;和/或所述环状延伸部叠置在所述底座的外周壁上。
11.根据权利要求1至10任一项所述的静电卡盘,其特征在于,所述环状保护件的材料包括全氟橡胶。
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PCT/CN2017/105838 WO2019015136A1 (zh) | 2017-07-17 | 2017-10-12 | 静电卡盘和等离子体加工设备 |
SG11202000354TA SG11202000354TA (en) | 2017-07-17 | 2017-10-12 | Electrostatic chuck and plasma processing apparatus |
KR1020197029805A KR20190119666A (ko) | 2017-07-17 | 2017-10-12 | 정전 척 및 플라즈마 가공 장비 |
TW106134860A TWI662650B (zh) | 2017-07-17 | 2017-10-12 | 靜電卡盤和電漿加工裝置 |
US16/630,793 US20200161103A1 (en) | 2017-07-17 | 2017-10-12 | Electrostatic chuck and plasma processing apparatus |
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DE202018106098U1 (de) * | 2017-10-31 | 2018-11-19 | Mfc Sealing Technology Co., Ltd. | Halbleiter-Bearbeitungsvorrichtung |
CN109962031B (zh) * | 2017-12-22 | 2021-03-12 | 中微半导体设备(上海)股份有限公司 | 一种受保护的静电吸盘及其应用 |
CN108695225A (zh) * | 2018-05-23 | 2018-10-23 | 上海华力微电子有限公司 | 静电吸盘 |
US10867829B2 (en) * | 2018-07-17 | 2020-12-15 | Applied Materials, Inc. | Ceramic hybrid insulator plate |
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JP7425034B2 (ja) | 2021-12-01 | 2024-01-30 | 三菱電線工業株式会社 | 保護リング、それを備えた接着面保護構造、及び接着面保護方法 |
CN117693809A (zh) * | 2022-01-31 | 2024-03-12 | 住友大阪水泥股份有限公司 | 陶瓷接合体、静电卡盘装置及陶瓷接合体的制造方法 |
JP7248167B1 (ja) | 2022-03-03 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
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