CN102187741B - 等离子体处理腔室的下电极组件 - Google Patents

等离子体处理腔室的下电极组件 Download PDF

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Publication number
CN102187741B
CN102187741B CN200980141249.1A CN200980141249A CN102187741B CN 102187741 B CN102187741 B CN 102187741B CN 200980141249 A CN200980141249 A CN 200980141249A CN 102187741 B CN102187741 B CN 102187741B
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CN
China
Prior art keywords
edge ring
ring
electrode assembly
bottom electrode
assembly according
Prior art date
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Active
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CN200980141249.1A
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English (en)
Chinese (zh)
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CN102187741A (zh
Inventor
贾森·奥古斯蒂诺
康·召
基思·威廉·加夫
汉·通·哈
布雷特·C·理查森
哈梅特·辛格
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Lam Research Corp
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Lam Research Corp
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
CN200980141249.1A 2008-10-31 2009-10-29 等离子体处理腔室的下电极组件 Active CN102187741B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19315108P 2008-10-31 2008-10-31
US61/193,151 2008-10-31
PCT/US2009/005857 WO2010062345A2 (en) 2008-10-31 2009-10-29 Lower electrode assembly of plasma processing chamber

Publications (2)

Publication Number Publication Date
CN102187741A CN102187741A (zh) 2011-09-14
CN102187741B true CN102187741B (zh) 2014-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980141249.1A Active CN102187741B (zh) 2008-10-31 2009-10-29 等离子体处理腔室的下电极组件

Country Status (7)

Country Link
US (1) US9412555B2 (enExample)
EP (1) EP2342951B1 (enExample)
JP (3) JP5743895B2 (enExample)
KR (3) KR101624123B1 (enExample)
CN (1) CN102187741B (enExample)
TW (1) TWI496511B (enExample)
WO (1) WO2010062345A2 (enExample)

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US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP2015115421A (ja) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP6540022B2 (ja) * 2014-12-26 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TWI613753B (zh) * 2015-02-16 2018-02-01 靜電吸附承盤側壁之改良密封件
CN106711061B (zh) * 2015-11-18 2019-11-29 北京北方华创微电子装备有限公司 承载装置及反应腔室
JP6545613B2 (ja) * 2015-12-28 2019-07-17 クアーズテック株式会社 フォーカスリング
JP3210105U (ja) * 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
US10256003B2 (en) * 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
CN110462781B (zh) * 2017-03-31 2022-03-11 玛特森技术公司 用于等离子体处理设备的基座组件
US11101692B2 (en) * 2017-04-07 2021-08-24 Sew-Eurodrive Gmbh & Co. Kg Method for producing a system for inductively transmitting energy to a mobile part, and device for carrying out the method
EP3852137A1 (en) * 2017-07-24 2021-07-21 LAM Research Corporation Moveable edge ring design
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN116884823A (zh) * 2017-12-15 2023-10-13 朗姆研究公司 等离子体室中使用的环形结构和系统
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN112466740A (zh) * 2020-11-30 2021-03-09 上海诺硕电子科技有限公司 等离子体处理晶圆用载具及晶圆处理设备
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
US12469733B2 (en) 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
EP4463883A4 (en) * 2022-01-11 2025-11-12 Lam Res Corp PERIPHERAL RING PLASMA RADICAL SEAL BARRIER

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Also Published As

Publication number Publication date
JP2012507860A (ja) 2012-03-29
KR101624123B1 (ko) 2016-05-25
JP2015181174A (ja) 2015-10-15
KR101701101B1 (ko) 2017-01-31
US9412555B2 (en) 2016-08-09
EP2342951B1 (en) 2019-03-06
TWI496511B (zh) 2015-08-11
KR20110081255A (ko) 2011-07-13
JP5743895B2 (ja) 2015-07-01
EP2342951A4 (en) 2015-10-28
CN102187741A (zh) 2011-09-14
TW201031277A (en) 2010-08-16
WO2010062345A2 (en) 2010-06-03
KR20150102124A (ko) 2015-09-04
KR101592061B1 (ko) 2016-02-04
EP2342951A2 (en) 2011-07-13
JP5976875B2 (ja) 2016-08-24
WO2010062345A3 (en) 2010-08-12
KR20160063412A (ko) 2016-06-03
JP2016219820A (ja) 2016-12-22
US20100108261A1 (en) 2010-05-06
JP6385397B2 (ja) 2018-09-05

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