JP2012502411A - 有機発光素子の製造方法および有機発光素子 - Google Patents

有機発光素子の製造方法および有機発光素子 Download PDF

Info

Publication number
JP2012502411A
JP2012502411A JP2011525398A JP2011525398A JP2012502411A JP 2012502411 A JP2012502411 A JP 2012502411A JP 2011525398 A JP2011525398 A JP 2011525398A JP 2011525398 A JP2011525398 A JP 2011525398A JP 2012502411 A JP2012502411 A JP 2012502411A
Authority
JP
Japan
Prior art keywords
layer
electrode layer
conductive layer
organic light
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011525398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012502411A5 (enExample
Inventor
ゲアディッツ クリストフ
ペッツォルト ラルフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012502411A publication Critical patent/JP2012502411A/ja
Publication of JP2012502411A5 publication Critical patent/JP2012502411A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011525398A 2008-09-04 2009-08-10 有機発光素子の製造方法および有機発光素子 Pending JP2012502411A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008045948.8 2008-09-04
DE102008045948A DE102008045948A1 (de) 2008-09-04 2008-09-04 Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements und organisches strahlungsemittierendes Bauelement
PCT/DE2009/001139 WO2010025696A2 (de) 2008-09-04 2009-08-10 Verfahren zur herstellung eines organischen strahlungsemittierenden bauelements und organisches strahlungsemittierendes bauelement

Publications (2)

Publication Number Publication Date
JP2012502411A true JP2012502411A (ja) 2012-01-26
JP2012502411A5 JP2012502411A5 (enExample) 2012-08-02

Family

ID=41381647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011525398A Pending JP2012502411A (ja) 2008-09-04 2009-08-10 有機発光素子の製造方法および有機発光素子

Country Status (7)

Country Link
US (1) US8927325B2 (enExample)
EP (1) EP2321863B1 (enExample)
JP (1) JP2012502411A (enExample)
KR (1) KR20110074518A (enExample)
CN (1) CN102144314B (enExample)
DE (1) DE102008045948A1 (enExample)
WO (1) WO2010025696A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049112A (ja) * 2010-07-26 2012-03-08 Semiconductor Energy Lab Co Ltd 発光装置、照明装置及び発光装置の作製方法
JP2013077417A (ja) * 2011-09-30 2013-04-25 Mitsubishi Materials Corp 有機エレクトロルミネッセンス素子およびその製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5829070B2 (ja) * 2010-07-26 2015-12-09 株式会社半導体エネルギー研究所 発光装置、照明装置、及び発光装置の作製方法
EP2831934B1 (en) * 2012-03-26 2021-08-11 Jawaharlal Nehru Centre For Advanced Scientific Research An organic solar cell and methods thereof
JP5999258B2 (ja) * 2012-05-09 2016-09-28 エルジー・ケム・リミテッド 有機電気化学装置およびその製造方法｛ｏｒｇａｎｉｃｅｌｅｃｔｒｏｃｈｅｍｉｃａｌｄｅｖｉｃｅ，ａｎｄｍｅｔｈｏｄｆｏｒｍａｎｕｆａｃｔｕｒｉｎｇｓａｍｅ｝
DE102012109777A1 (de) * 2012-10-15 2014-04-17 Heliatek Gmbh Verfahren zum Bedrucken optoelektronischer Bauelemente mit Stromsammelschienen
CN105393376B (zh) * 2013-06-14 2017-11-17 株式会社Lg化学 有机太阳能电池及其制造方法
DE102014110052B4 (de) * 2014-07-17 2020-04-16 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102014110978A1 (de) * 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Licht emittierendes Bauelement
DE102014110969A1 (de) 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Bauteil sowie Verfahren zur Herstellung eines organischen Bauteils
DE102014112204A1 (de) 2014-08-26 2016-03-03 Osram Oled Gmbh Optoelektronische Vorrichtung
DE102014112618B4 (de) * 2014-09-02 2023-09-07 Pictiva Displays International Limited Organisches Licht emittierendes Bauelement
DE102015101512A1 (de) * 2015-02-03 2016-08-04 Osram Oled Gmbh Organisches elektronisches Bauelement
DE102015106630A1 (de) * 2015-04-29 2016-11-03 Osram Oled Gmbh Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015110143B4 (de) * 2015-06-24 2023-07-27 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015212477B4 (de) * 2015-07-03 2025-11-27 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015111564A1 (de) * 2015-07-16 2017-01-19 Osram Oled Gmbh Organisches optoelektronisches Bauteil und Herstellungsverfahren hierfür
US20180016687A1 (en) * 2016-07-13 2018-01-18 Kabushiki Kaisha Toyota Chuo Kenkyusho Method for producing nanoimprint transfer body
CN110868857A (zh) * 2018-06-26 2020-03-06 麦克沃克斯股份有限公司 包括菌丝及包埋材料的真菌复合材料
EP3599648A1 (en) * 2018-07-25 2020-01-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Photovoltaic device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134282A (ja) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd 照明装置及びそれを用いた画像読取装置
JP2004349138A (ja) * 2003-05-23 2004-12-09 Toyota Industries Corp 有機電界発光素子及びその製造方法
WO2005106573A1 (ja) * 2004-04-30 2005-11-10 Fuji Photo Film Co., Ltd. 液晶表示装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3036436B2 (ja) 1996-06-19 2000-04-24 セイコーエプソン株式会社 アクティブマトリックス型有機ｅｌ表示体の製造方法
JPH11339970A (ja) * 1998-05-26 1999-12-10 Tdk Corp 有機ｅｌ表示装置
DE10324880B4 (de) 2003-05-30 2007-04-05 Schott Ag Verfahren zur Herstellung von OLEDs
US7122852B2 (en) * 2004-05-12 2006-10-17 Headway Technologies, Inc. Structure/method to fabricate a high performance magnetic tunneling junction MRAM
JP4121514B2 (ja) * 2004-07-22 2008-07-23 シャープ株式会社 有機発光素子、及び、それを備えた表示装置
WO2007029756A1 (ja) 2005-09-07 2007-03-15 Asahi Glass Company, Limited 補助配線付き基体およびその製造方法
EP1887628A1 (en) * 2006-07-20 2008-02-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Electro-optical device
CA2666517A1 (en) * 2006-10-23 2008-05-02 Pacific Biosciences Of California, Inc. Polymerase enzymes and reagents for enhanced nucleic acid sequencing
JP5279254B2 (ja) * 2007-12-18 2013-09-04 キヤノン株式会社 有機発光素子及び表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134282A (ja) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd 照明装置及びそれを用いた画像読取装置
JP2004349138A (ja) * 2003-05-23 2004-12-09 Toyota Industries Corp 有機電界発光素子及びその製造方法
WO2005106573A1 (ja) * 2004-04-30 2005-11-10 Fuji Photo Film Co., Ltd. 液晶表示装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049112A (ja) * 2010-07-26 2012-03-08 Semiconductor Energy Lab Co Ltd 発光装置、照明装置及び発光装置の作製方法
JP2016035941A (ja) * 2010-07-26 2016-03-17 株式会社半導体エネルギー研究所 発光装置
US9728737B2 (en) 2010-07-26 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and manufacturing method of light-emitting device
JP2013077417A (ja) * 2011-09-30 2013-04-25 Mitsubishi Materials Corp 有機エレクトロルミネッセンス素子およびその製造方法

Also Published As

Publication number Publication date
EP2321863A2 (de) 2011-05-18
EP2321863B1 (de) 2018-10-10
WO2010025696A2 (de) 2010-03-11
KR20110074518A (ko) 2011-06-30
CN102144314B (zh) 2015-04-22
US8927325B2 (en) 2015-01-06
DE102008045948A1 (de) 2010-03-11
WO2010025696A3 (de) 2010-07-29
US20110266588A1 (en) 2011-11-03
CN102144314A (zh) 2011-08-03

Similar Documents

Publication Publication Date Title
JP2012502411A (ja) 有機発光素子の製造方法および有機発光素子
JP5612691B2 (ja) 有機ｅｌ素子およびその製造方法
JP5612693B2 (ja) 有機ｅｌ素子およびその製造方法
CN101965654B (zh) 有机发光二极管、接触装置和制造有机发光二极管的方法
CN110832660A (zh) 在图案化涂层上选择性沉积传导性涂层的方法和包括传导性涂层的装置
US10290687B2 (en) Lighting apparatus using organic light emitting diode and method of fabricating the same
KR20140128308A (ko) 유기 전자 소자 및 유기 전자 소자의 제조 방법
JP5612692B2 (ja) 有機ｅｌ素子およびその製造方法
JP2013514612A (ja) 均一な温度分布を有する有機発光装置
CN102696125A (zh) 无掩模制造oled器件的方法
US8969860B2 (en) Organic electroluminescent lighting device and method for manufacturing the lighting device
KR101182435B1 (ko) 전도성 고분자 패턴막 및 이를 패터닝 하는 방법 그리고 이를 이용하는 유기전계 발광소자 및 그 제조방법
JP2013514621A (ja) 直列に接続されたｏｌｅｄデバイスを生成するための方法
US20180198087A1 (en) Organic light-emitting component and method for producing an organic light-emitting component
US20210399169A1 (en) Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
KR100942498B1 (ko) 유기발광장치의 제조방법
KR101486844B1 (ko) 복사 방출 장치 및 복사 방출 장치의 제조 방법
JP6751747B2 (ja) 照明装置用ｏｌｅｄパネル及びその製造方法
CN107851732A (zh) 制作电子设备的方法
KR102482208B1 (ko) 표시품질이 향상된 유기발광소자
WO2018235594A1 (ja) 透明電極の製造方法及び電子デバイスの製造方法
KR20060084210A (ko) 유기 ｅｌ 소자
KR20130033100A (ko) 유기전계 발광소자
KR20110103050A (ko) 유기전계 발광소자의 제조 방법
KR20130061853A (ko) 발광장치의 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120614

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130313

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130313

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130605

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130701