CN102144314B - 用于制造发射辐射的有机器件的方法以及发射辐射的有机器件 - Google Patents

用于制造发射辐射的有机器件的方法以及发射辐射的有机器件 Download PDF

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CN102144314B
CN102144314B CN200980134746.9A CN200980134746A CN102144314B CN 102144314 B CN102144314 B CN 102144314B CN 200980134746 A CN200980134746 A CN 200980134746A CN 102144314 B CN102144314 B CN 102144314B
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layer
conductive layer
electrode layer
electrode
metal
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CN102144314A (zh
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克里斯托夫·盖尔迪茨
拉尔夫·佩措尔德
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
CN200980134746.9A 2008-09-04 2009-08-10 用于制造发射辐射的有机器件的方法以及发射辐射的有机器件 Active CN102144314B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008045948A DE102008045948A1 (de) 2008-09-04 2008-09-04 Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements und organisches strahlungsemittierendes Bauelement
DE102008045948.8 2008-09-04
PCT/DE2009/001139 WO2010025696A2 (de) 2008-09-04 2009-08-10 Verfahren zur herstellung eines organischen strahlungsemittierenden bauelements und organisches strahlungsemittierendes bauelement

Publications (2)

Publication Number Publication Date
CN102144314A CN102144314A (zh) 2011-08-03
CN102144314B true CN102144314B (zh) 2015-04-22

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Country Status (7)

Country Link
US (1) US8927325B2 (enExample)
EP (1) EP2321863B1 (enExample)
JP (1) JP2012502411A (enExample)
KR (1) KR20110074518A (enExample)
CN (1) CN102144314B (enExample)
DE (1) DE102008045948A1 (enExample)
WO (1) WO2010025696A2 (enExample)

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JP5829070B2 (ja) * 2010-07-26 2015-12-09 株式会社半導体エネルギー研究所 発光装置、照明装置、及び発光装置の作製方法
WO2012014759A1 (en) * 2010-07-26 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and manufacturing method of light-emitting device
JP5760913B2 (ja) * 2011-09-30 2015-08-12 三菱マテリアル株式会社 有機エレクトロルミネッセンス素子およびその製造方法
US20150047710A1 (en) * 2012-03-26 2015-02-19 Jawaharlal Nehru Centre For Advanced Scientific Research Organic solar cell and methods thereof
US10326091B2 (en) 2012-05-09 2019-06-18 Lg Chem, Ltd. Organic electrochemical device, and method for manufacturing same
DE102012109777A1 (de) 2012-10-15 2014-04-17 Heliatek Gmbh Verfahren zum Bedrucken optoelektronischer Bauelemente mit Stromsammelschienen
WO2014200312A1 (ko) * 2013-06-14 2014-12-18 주식회사 엘지화학 유기태양전지 및 이의 제조방법
DE102014110052B4 (de) * 2014-07-17 2020-04-16 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102014110969A1 (de) 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Bauteil sowie Verfahren zur Herstellung eines organischen Bauteils
DE102014110978A1 (de) * 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Licht emittierendes Bauelement
DE102014112204A1 (de) 2014-08-26 2016-03-03 Osram Oled Gmbh Optoelektronische Vorrichtung
DE102014112618B4 (de) * 2014-09-02 2023-09-07 Pictiva Displays International Limited Organisches Licht emittierendes Bauelement
DE102015101512A1 (de) * 2015-02-03 2016-08-04 Osram Oled Gmbh Organisches elektronisches Bauelement
DE102015106630A1 (de) * 2015-04-29 2016-11-03 Osram Oled Gmbh Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015110143B4 (de) * 2015-06-24 2023-07-27 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015212477B4 (de) * 2015-07-03 2025-11-27 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102015111564A1 (de) * 2015-07-16 2017-01-19 Osram Oled Gmbh Organisches optoelektronisches Bauteil und Herstellungsverfahren hierfür
US20180016687A1 (en) * 2016-07-13 2018-01-18 Kabushiki Kaisha Toyota Chuo Kenkyusho Method for producing nanoimprint transfer body
CA3061535A1 (en) * 2018-06-26 2019-12-26 Mycoworks, Inc. Fungal composites comprising mycelium and an embedded material
EP3599648A1 (en) 2018-07-25 2020-01-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Photovoltaic device and method of manufacturing the same

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TW200535516A (en) * 2004-04-30 2005-11-01 Fujitsu Ltd Liquid crystal display and process for fabricating the same
US20060017375A1 (en) * 2004-07-22 2006-01-26 Sharp Kabushiki Kaisha Organic light emitting element, display device including the same and method for manufacturing organic light emitting element
US20070015294A1 (en) * 2004-05-12 2007-01-18 Headway Technologies Inc. Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM
TW200746886A (en) * 2005-09-07 2007-12-16 Asahi Glass Co Ltd Base material with auxiliary wiring and method for manufacturing such base material
EP1887628A1 (en) * 2006-07-20 2008-02-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Electro-optical device

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JP3036436B2 (ja) * 1996-06-19 2000-04-24 セイコーエプソン株式会社 アクティブマトリックス型有機ｅｌ表示体の製造方法
JPH11339970A (ja) * 1998-05-26 1999-12-10 Tdk Corp 有機ｅｌ表示装置
JP2004134282A (ja) 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd 照明装置及びそれを用いた画像読取装置
JP2004349138A (ja) * 2003-05-23 2004-12-09 Toyota Industries Corp 有機電界発光素子及びその製造方法
DE10324880B4 (de) * 2003-05-30 2007-04-05 Schott Ag Verfahren zur Herstellung von OLEDs
US8343746B2 (en) * 2006-10-23 2013-01-01 Pacific Biosciences Of California, Inc. Polymerase enzymes and reagents for enhanced nucleic acid sequencing
JP5279254B2 (ja) * 2007-12-18 2013-09-04 キヤノン株式会社 有機発光素子及び表示装置

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
TW200535516A (en) * 2004-04-30 2005-11-01 Fujitsu Ltd Liquid crystal display and process for fabricating the same
US20070015294A1 (en) * 2004-05-12 2007-01-18 Headway Technologies Inc. Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM
US20060017375A1 (en) * 2004-07-22 2006-01-26 Sharp Kabushiki Kaisha Organic light emitting element, display device including the same and method for manufacturing organic light emitting element
TW200746886A (en) * 2005-09-07 2007-12-16 Asahi Glass Co Ltd Base material with auxiliary wiring and method for manufacturing such base material
EP1887628A1 (en) * 2006-07-20 2008-02-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Electro-optical device

Also Published As

Publication number Publication date
EP2321863A2 (de) 2011-05-18
US8927325B2 (en) 2015-01-06
KR20110074518A (ko) 2011-06-30
WO2010025696A2 (de) 2010-03-11
CN102144314A (zh) 2011-08-03
JP2012502411A (ja) 2012-01-26
US20110266588A1 (en) 2011-11-03
EP2321863B1 (de) 2018-10-10
DE102008045948A1 (de) 2010-03-11
WO2010025696A3 (de) 2010-07-29

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