JP2012253334A - 記憶素子、信号処理回路および記憶素子の駆動方法 - Google Patents
記憶素子、信号処理回路および記憶素子の駆動方法 Download PDFInfo
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
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- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
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- G—PHYSICS
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- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
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- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract
【解決手段】インバータまたはクロックドインバータなどの、入力された信号の位相を反転させて出力する位相反転素子を用いた記憶素子内に、データを保持するための容量素子と、当該容量素子における電荷の蓄積および放出を制御するスイッチング素子とを設ける。例えば、容量素子の一方の電極を位相反転素子の入力あるいは出力に接続し、他方の電極をスイッチング素子に接続する。上記記憶素子を、信号処理回路が有する、レジスタやキャッシュメモリなどの記憶装置に用いる。
【選択図】図1
Description
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことをいう。rとしては、例えば、0.05とすればよい。他の酸化物でも同様である。
本発明の一態様に係る記憶装置は、1ビットのデータを記憶することができる記憶素子を、1つまたは複数有する。図1(A)に、本発明の記憶装置が有する記憶素子の回路図の一例を示す。図1(A)に示す記憶素子100は、入力された信号の位相を反転させて出力する第1の位相反転素子101および第2の位相反転素子102と、スイッチング素子103と、スイッチング素子104と、容量素子105と、容量用スイッチング素子106とを、少なくとも有する。
本実施の形態では、本発明の記憶装置が有する記憶素子の、別の一例について説明する。図1に示される記憶素子100は、容量素子105の一方の電極が第1のノードN1に接続しているが、その他の部分に接続していても良い。例えば、図3(A)に示す記憶素子100aのように、容量素子105の一方の電極が第2のノードN2に接続していてもよいし、図3(B)に示す記憶素子100bのように、容量素子105の一方の電極がスイッチング素子104と第2の位相反転素子102の間に接続していても良い。すなわち、第1の位相反転素子101と第2の位相反転素子102の入力あるいは出力のいずれかと接続していれば良い。
本実施の形態では、本発明の記憶装置が有する記憶素子の、別の一例について説明する。図3(C)に、本実施の形態の記憶素子の回路図を、一例として示す。
本実施の形態では、酸化物半導体膜の形成方法について、図8(B)を参照して説明する。最初に、ゲート絶縁物315上に、必要な厚さの酸化物半導体膜を形成する。酸化物半導体膜は、希ガス(代表的にはアルゴン)雰囲気下、酸素雰囲気下、又は希ガス(例えばアルゴン)および酸素混合雰囲気下においてスパッタ法により形成することができる。酸化物半導体膜には、上述したような酸化物半導体を用いることができる。
図9(A)に、上記実施の形態で説明した記憶素子を記憶装置として用いた、本発明の一態様に係る信号処理回路の一例を示す。本発明の一態様に係る信号処理回路は、一または複数の演算装置と、一または複数の記憶装置とを少なくとも有する。具体的に、図9(A)に示す信号処理回路400は、演算回路401、演算回路402、記憶装置403、記憶装置404、記憶装置405、制御装置406、電源制御回路407を有する。
本実施の形態では、本発明の一態様に係る信号処理回路の一つである、CPUの構成について説明する。
100a 記憶素子
100b 記憶素子
100c 記憶素子
101 第1の位相反転素子
102 第2の位相反転素子
103 スイッチング素子
104 スイッチング素子
105 容量素子
105a 第1の容量素子
105b 第2の容量素子
106 容量用スイッチング素子
106a 第1の容量用スイッチング素子
106b 第2の容量用スイッチング素子
107 Pチャネル型トランジスタ
108 Nチャネル型トランジスタ
109 Pチャネル型トランジスタ
110 Nチャネル型トランジスタ
111 寄生容量を含む容量
200 記憶素子
201 インバータ
202 インバータ
203 スイッチング素子
204 スイッチング素子
207 Pチャネル型トランジスタ
208 Nチャネル型トランジスタ
209 Pチャネル型トランジスタ
210 Nチャネル型トランジスタ
300 記憶素子
301 VDD配線
302 Sig1配線
303 Sig2配線
304 IN配線
305 OUT配線
306 ゲート配線
307 第1容量電極
308 酸化物半導体領域
309 ソース配線
310 第2容量電極
311 素子分離領域
312 層間絶縁物
313 コンタクトプラグ
314 埋め込み絶縁物
315 ゲート絶縁物
400 信号処理回路
401 演算回路
402 演算回路
403 記憶装置
404 記憶装置
405 記憶装置
406 制御装置
407 電源制御回路
410 基板
411 演算回路
412 演算回路コントローラ
413 命令デコーダー
414 割り込みコントローラ
415 タイミングコントローラ
416 レジスタ
417 レジスタコントローラ
418 バスインターフェース
419 ROM
420 ROMインターフェース
N1 第1のノード
N2 第2のノード
N3 第3のノード
N4 第4のノード
IN 信号
OUT 信号
Sig1 信号
Sig2 信号
Sig3 信号
CLK1 基準クロック信号
CLK2 内部クロック信号
Claims (13)
- 互いに、他の出力端子が自らの入力端子に接続されることで、データの保持をおこなう一対の位相反転素子と、
容量素子と、
前記位相反転素子の少なくとも1つの上層に設けられ、前記容量素子への前記データの書き込みを制御するスイッチング素子と、を有し、
前記容量素子の一方の電極は前記位相反転素子の出力あるいは入力のいずれかに接続し、前記容量素子の他方の電極は前記スイッチング素子のソースもしくはドレインのいずれか一方に接続する記憶素子。 - 請求項1記載の記憶素子において、さらに第2の容量素子と、
前記位相反転素子の少なくとも1つの上層に設けられ、前記容量素子への前記データの書き込みを制御する第2のスイッチング素子と、を有し、
前記第2の容量素子の一方の電極は前記位相反転素子の出力あるいは入力のいずれか他方に接続し、
前記第2の容量素子の他方の電極は、前記第2のスイッチング素子のソースもしくはドレインのいずれか一方に接続する記憶素子。 - 前記スイッチング素子は、半導体層に少なくとも1つの凹部を有する請求項1または2のいずれかに記載の記憶素子。
- 前記スイッチング素子は、チャネル長が最小加工線幅の10倍以上である請求項1または請求項3のいずれかに記載の記憶素子。
- 前記スイッチング素子は、チャネル長が1μm以上である請求項1乃至4のいずれかに記載の記憶素子。
- 前記容量素子の容量が、前記スイッチング素子のゲート容量よりも小さい請求項1乃至5のいずれかに記載の記憶素子。
- 前記スイッチング素子は、チャネル形成領域に酸化物半導体を有する請求項1乃至6のいずれかに記載の記憶素子。
- 請求項7において、前記酸化物半導体は、In−Ga−Zn系酸化物である記憶素子。
- 請求項7または8のいずれかにおいて、前記チャネル形成領域の水素濃度は、5×1019/cm3以下である記憶素子。
- 請求項1乃至9のいずれかにおいて、前記一対の位相反転素子のいずれか一方は、インバータまたはクロックドインバータである記憶素子。
- 演算回路と、前記演算回路からのデータを記憶する記憶装置とを有し、前記記憶装置は、請求項1乃至10のいずれかに記載の記憶装置である信号処理回路。
- CPU、DSP、またはマイクロコントローラを含むLSIである請求項11記載の信号処理回路。
- 請求項1乃至9のいずれかに記載の記憶素子において、
前記容量用スイッチング素子をオフとした状態で前記位相反転素子の入力と出力の電位をともに第1の電位とする過程と、
前記容量用スイッチング素子をオンとする過程と、
前記前記位相反転素子を活性状態とする過程とを有し、
前記第1の電位は、前記位相反転素子が活性状態とした際に、前記位相反転素子に印加される低いほうの電位よりも高く、高いほうの電位よりも低いことを特徴とする記憶素子の駆動方法。
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI562142B (en) * | 2011-01-05 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Storage element, storage device, and signal processing circuit |
KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
US8982607B2 (en) * | 2011-09-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
JP2014063557A (ja) | 2012-02-24 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | 記憶装置及び半導体装置 |
JP6273112B2 (ja) | 2012-09-11 | 2018-01-31 | 株式会社半導体エネルギー研究所 | フリップフロップ回路および半導体装置 |
JP6316630B2 (ja) * | 2013-03-26 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
SG11201606647PA (en) | 2014-03-14 | 2016-09-29 | Semiconductor Energy Lab Co Ltd | Circuit system |
CN105609071B (zh) * | 2016-01-05 | 2018-01-26 | 京东方科技集团股份有限公司 | 移位寄存器及其驱动方法、栅极驱动电路及显示装置 |
KR102295315B1 (ko) | 2016-04-15 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1185111A (ja) * | 1997-09-10 | 1999-03-30 | Sony Corp | 液晶表示素子 |
US6141237A (en) * | 1999-07-12 | 2000-10-31 | Ramtron International Corporation | Ferroelectric non-volatile latch circuits |
US6512687B1 (en) * | 2002-01-07 | 2003-01-28 | Macronix International Co., Ltd. | Non-volatile ferroelectric capacitor memory circuit |
WO2004049346A1 (ja) * | 2002-11-25 | 2004-06-10 | Matsushita Electric Industrial Co., Ltd. | 不揮発性メモリセルおよびその制御方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2008153329A (ja) * | 2006-12-15 | 2008-07-03 | Renesas Technology Corp | 半導体装置の製造方法 |
US20110101332A1 (en) * | 2009-10-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
US5332931A (en) * | 1991-06-24 | 1994-07-26 | Harris Corporation | High speed differential comparator |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP3939666B2 (ja) | 2002-01-18 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP2003282823A (ja) * | 2002-03-26 | 2003-10-03 | Toshiba Corp | 半導体集積回路 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
CN102856390B (zh) | 2004-03-12 | 2015-11-25 | 独立行政法人科学技术振兴机构 | 包含薄膜晶体管的lcd或有机el显示器的转换组件 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
EP2453480A2 (en) | 2004-11-10 | 2012-05-16 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
JP4531615B2 (ja) * | 2005-02-03 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101667544B (zh) | 2005-11-15 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
US7768820B2 (en) * | 2008-01-04 | 2010-08-03 | Texas Instruments Incorporated | Feedback structure for an SRAM cell |
JP2009283770A (ja) * | 2008-05-23 | 2009-12-03 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101481398B1 (ko) | 2009-12-11 | 2015-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 래치 회로 및 cpu |
EP2526619B1 (en) | 2010-01-20 | 2016-03-23 | Semiconductor Energy Laboratory Co. Ltd. | Signal processing circuit and method for driving the same |
KR101810261B1 (ko) | 2010-02-10 | 2017-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 |
CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
US9142320B2 (en) | 2011-04-08 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
US8854867B2 (en) | 2011-04-13 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and driving method of the memory device |
US8743591B2 (en) | 2011-04-26 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for driving the same |
-
2012
- 2012-05-03 TW TW101115825A patent/TWI541978B/zh not_active IP Right Cessation
- 2012-05-07 US US13/465,227 patent/US8947910B2/en not_active Expired - Fee Related
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1185111A (ja) * | 1997-09-10 | 1999-03-30 | Sony Corp | 液晶表示素子 |
US6141237A (en) * | 1999-07-12 | 2000-10-31 | Ramtron International Corporation | Ferroelectric non-volatile latch circuits |
JP2001126469A (ja) * | 1999-07-12 | 2001-05-11 | Ramtron Internatl Corp | 強誘電性不揮発性ラッチ |
US6512687B1 (en) * | 2002-01-07 | 2003-01-28 | Macronix International Co., Ltd. | Non-volatile ferroelectric capacitor memory circuit |
WO2004049346A1 (ja) * | 2002-11-25 | 2004-06-10 | Matsushita Electric Industrial Co., Ltd. | 不揮発性メモリセルおよびその制御方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2008153329A (ja) * | 2006-12-15 | 2008-07-03 | Renesas Technology Corp | 半導体装置の製造方法 |
US20110101332A1 (en) * | 2009-10-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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JP5952077B2 (ja) | 2016-07-13 |
KR20190080843A (ko) | 2019-07-08 |
KR102141786B1 (ko) | 2020-08-06 |
TW201304121A (zh) | 2013-01-16 |
US20120287701A1 (en) | 2012-11-15 |
TWI541978B (zh) | 2016-07-11 |
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