JP2012199572A5 - - Google Patents

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Publication number
JP2012199572A5
JP2012199572A5 JP2012122801A JP2012122801A JP2012199572A5 JP 2012199572 A5 JP2012199572 A5 JP 2012199572A5 JP 2012122801 A JP2012122801 A JP 2012122801A JP 2012122801 A JP2012122801 A JP 2012122801A JP 2012199572 A5 JP2012199572 A5 JP 2012199572A5
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit according
lower electrode
layer
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012122801A
Other languages
English (en)
Japanese (ja)
Other versions
JP5744790B2 (ja
JP2012199572A (ja
Filing date
Publication date
Priority claimed from US09/310,388 external-priority patent/US6750495B1/en
Application filed filed Critical
Publication of JP2012199572A publication Critical patent/JP2012199572A/ja
Publication of JP2012199572A5 publication Critical patent/JP2012199572A5/ja
Application granted granted Critical
Publication of JP5744790B2 publication Critical patent/JP5744790B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2012122801A 1999-05-12 2012-05-30 集積回路とその方法 Expired - Lifetime JP5744790B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/310,388 US6750495B1 (en) 1999-05-12 1999-05-12 Damascene capacitors for integrated circuits
US09/310388 1999-05-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008064008A Division JP2008205481A (ja) 1999-05-12 2008-03-13 集積回路とその方法

Publications (3)

Publication Number Publication Date
JP2012199572A JP2012199572A (ja) 2012-10-18
JP2012199572A5 true JP2012199572A5 (enExample) 2013-09-19
JP5744790B2 JP5744790B2 (ja) 2015-07-08

Family

ID=23202276

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2000137225A Pending JP2000332221A (ja) 1999-05-12 2000-05-10 集積回路とその方法
JP2008064008A Pending JP2008205481A (ja) 1999-05-12 2008-03-13 集積回路とその方法
JP2012122801A Expired - Lifetime JP5744790B2 (ja) 1999-05-12 2012-05-30 集積回路とその方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2000137225A Pending JP2000332221A (ja) 1999-05-12 2000-05-10 集積回路とその方法
JP2008064008A Pending JP2008205481A (ja) 1999-05-12 2008-03-13 集積回路とその方法

Country Status (5)

Country Link
US (1) US6750495B1 (enExample)
JP (3) JP2000332221A (enExample)
KR (1) KR100695028B1 (enExample)
GB (1) GB2350929B (enExample)
TW (1) TW463304B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3507371B2 (ja) 1999-09-01 2004-03-15 宮本 実 金 庫
JP4497260B2 (ja) * 2000-08-31 2010-07-07 エルピーダメモリ株式会社 半導体集積回路装置およびその製造方法
KR100414873B1 (ko) * 2001-05-11 2004-01-13 주식회사 하이닉스반도체 강유전체 메모리소자의 제조 방법
US20030052365A1 (en) 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
KR100456577B1 (ko) * 2002-01-10 2004-11-09 삼성전자주식회사 반도체 장치의 커패시터 및 그 제조 방법
US6953724B2 (en) * 2003-09-25 2005-10-11 International Business Machines Corporation Self-limited metal recess for deep trench metal fill
TWI278035B (en) * 2004-03-31 2007-04-01 Hynix Semiconductor Inc Method for fabricating semiconductor device
JP4571836B2 (ja) * 2004-07-23 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4646595B2 (ja) * 2004-10-27 2011-03-09 パナソニック株式会社 半導体記憶装置
FR2885452A1 (fr) * 2005-05-04 2006-11-10 St Microelectronics Sa Circuit integre comprenant au moins un condensateur et procede de formation de condensateur
KR100778850B1 (ko) * 2005-10-28 2007-11-22 동부일렉트로닉스 주식회사 반도체 소자의 커패시터 및 그 형성방법
CN100490154C (zh) * 2006-02-21 2009-05-20 联华电子股份有限公司 电容器结构
US7880268B2 (en) 2006-05-12 2011-02-01 Stmicroelectronics S.A. MIM capacitor
US8441097B2 (en) * 2009-12-23 2013-05-14 Intel Corporation Methods to form memory devices having a capacitor with a recessed electrode
JP2013098216A (ja) * 2011-10-28 2013-05-20 Elpida Memory Inc 半導体装置、メモリカード、データ処理システムおよび半導体装置の製造方法
US9991333B1 (en) * 2017-02-09 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal (MIM) capacitor structure and method for forming the same
CN119212551A (zh) * 2024-11-28 2024-12-27 荣芯半导体(宁波)有限公司 沟槽电容器的制造方法及半导体器件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
JPH07114260B2 (ja) * 1989-11-23 1995-12-06 財団法人韓国電子通信研究所 コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法
JP3222188B2 (ja) * 1992-04-14 2001-10-22 株式会社日立製作所 半導体装置及びその製造方法
KR960011655B1 (en) 1993-04-20 1996-08-24 Hyundai Electronics Ind Dram cell capacitor and the method
JPH08139293A (ja) * 1994-09-17 1996-05-31 Toshiba Corp 半導体基板
US5691219A (en) * 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
DE59510349D1 (de) * 1995-04-24 2002-10-02 Infineon Technologies Ag Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung
KR100375428B1 (ko) * 1995-11-20 2003-05-17 가부시끼가이샤 히다치 세이사꾸쇼 반도체기억장치 및 그 제조방법
US5716883A (en) 1996-11-06 1998-02-10 Vanguard International Semiconductor Corporation Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns
JPH10173148A (ja) * 1996-12-13 1998-06-26 Hitachi Ltd 半導体記憶装置
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
US5888877A (en) * 1997-10-28 1999-03-30 Micron Technology, Inc. Method of forming recessed container cells
US6057571A (en) * 1998-03-31 2000-05-02 Lsi Logic Corporation High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit
US6017790A (en) * 1998-07-06 2000-01-25 United Microelectronics Corp. Method of manufacturing embedded dynamic random access memory
KR100292938B1 (ko) 1998-07-16 2001-07-12 윤종용 고집적디램셀커패시터및그의제조방법
US6207524B1 (en) * 1998-09-29 2001-03-27 Siemens Aktiengesellschaft Memory cell with a stacked capacitor
JP3189813B2 (ja) 1998-11-30 2001-07-16 日本電気株式会社 半導体装置の製造方法
US6346454B1 (en) 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor

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