JP2012199547A - アクティブ発振防止付き複合半導体デバイス - Google Patents
アクティブ発振防止付き複合半導体デバイス Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 119
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims 1
- 239000007943 implant Substances 0.000 abstract description 9
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- 210000000746 body region Anatomy 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
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- 229910045601 alloy Inorganic materials 0.000 description 3
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- 230000015556 catabolic process Effects 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229920000090 poly(aryl ether) Polymers 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本明細書は、アクティブ発振制御付き複合半導体デバイスの種々の実現を開示する。1つの好適な実現では、ノーマリオフ複合半導体デバイスが、ノーマリオンIII-窒化物パワートランジスタ、及びこのノーマリオンIII-窒化物パワートランジスタとカスコード接続された低電圧(LV)デバイスを具えて、ノーマリオフ複合半導体デバイスを形成する。このLVデバイスは、例えば修正したボディ打込み領域により低減した出力抵抗、及び例えば修正した酸化物の厚さにより低減したトランスコンダクタンスの一方または両方を含むように構成されて、複合半導体デバイスのゲインを約10,000以下にすることができる。
【選択図】図1
Description
本願は、係属中の米国特許仮出願第61/454743号、2011年3月21日出願、発明の名称”III-Nitride Optimized Rugged Cascode Power Device”に基づいて優先権を主張する。この係属中の仮出願の開示は、その全文を参考文献として本明細書に含める。
本明細書で用いる「III族窒化物」または「III-窒化物」とは、窒素及び少なくとも1つのIII族元素を含む化合物半導体を称し、これらのIII族元素は、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、及びホウ素(B)を含み、そして、その任意の合金、例えばアルミニウム窒化ガリウム(AlxGa(1-x)N)、インジウム窒化ガリウム(InyGa(1-y)N)、アルミニウムインジウム窒化ガリウム(AlxInyGa(1-x-y)N)、ガリウムヒ素リン窒素(GaAsaPbN(1-a-b))、アルミニウムインジウムガリウムヒ素リン窒素(AlxInyGa(1-x-y)AsaPbN(1-a-b))を含むが、これらに限定されない。III-窒化物は一般に、あらゆる極性も称し、これらの極性は、極性Ga、極性N、半極性または非極性の結晶方位を含むが、これらに限定されない。III-窒化物材料は、ウルツ鉱型、閃亜鉛鉱型、あるいは混合型のポリタイプ(結晶多形)のいずれかを含むこともでき、そして、単結晶(モノクリスタル)、多結晶、または非結晶の結晶構造を含むことができる。
III-窒化物材料は半導体化合物であり、比較的広幅の直接バンドギャップを有し、強い圧電分極を有する可能性があり、高い破壊電界、高い飽和速度、及び二次元電子ガスの生成を可能にすることができる。その結果、III-窒化物材料は、多くの電力用途、例えばデプレッションモード(例えばノーマリオン)電力用電界効果トランジスタ(パワーFET)、高電子移動度トランジスタ(HEMT)、及びダイオードに使用されている。
以下の説明は、本発明の実施に関連する詳細な情報を含む。本発明は、本明細書に具体的に説明するのとは異なる方法で実施することができることは、当業者の認める所である。本願中の図面及びその詳細な説明は、好適な実施例に指向したものに過ぎない。特に断りのない限り、図面中では、同様の、あるいは対応する要素は、同様の、あるいは対応する参照番号で示すことがある。さらに、本願中の図面及び例示は一般に原寸に比例しておらず、そして、実際の相対寸法に相当することを意図していない。
式1: A=(gmLV)×(gmIII-N)×(rO-LV)×(rO-III-N)
ここに、rO-LVはLVトランジスタ240の出力抵抗であり、rO-III-Nは、III-窒化物パワートランジスタ210の出力抵抗である。
式2: gmLV∝1/TOX
従って、TOXを増加させることによって酸化物の厚さを修正することは、gmLVを減少させ、結果的に複合半導体デバイス200のゲイン(A)を減少させる。その結果、LVトランジスタ240は、ゲインを制限するTOX(例えば増加したTOX)を有するように構成することによって、複合半導体デバイス200にアクティブ発振制御を行わせることができる。
102 複合ソース端子
104 複合ドレイン端子
106 複合ゲート端子
110 III-窒化物パワートランジスタ
120 LVデバイス
130 LVダイオード
140 LVトランジスタ
200 複合半導体デバイス
202 複合ソース端子
204 複合ドレイン端子
206 複合ゲート端子
207 半導体パッケージのインダクタンス
209 半導体パッケージのインダクタンス
210 III-窒化物パワートランジスタ
212 ソース
214 ドレイン
216 ゲート
218 出力キャパシタンス
220 LVデバイス
230 LVダイオード
240 LVトランジスタ
242 ソース
244 ドレイン
248 出力キャパシタンス
250 ゲート
340 LVトランジスタ
342 ソース
344 ドレイン
346 ボディ領域
349 ボディ打込み領域
350 ゲート
352 ゲート絶縁体
354 厚さ
356a、356b スペーサ
360 基板
Claims (20)
- アクティブ発振制御を含むノーマリオフ複合半導体デバイスであって、
ノーマリオンIII-窒化物パワートランジスタと;
前記ノーマリオンIII-窒化物パワートランジスタとカスコード接続されて、前記ノーマリオフ複合半導体デバイスを形成する低電圧(LV)デバイスとを具え、
前記LVデバイスは、前記ノーマリオフ複合半導体デバイスのゲインを約10,000以下にするように低減された出力抵抗を有することを特徴とするノーマリオフ複合半導体デバイス。 - 前記ノーマリオンIII-窒化物パワートランジスタが、III-窒化物電界効果トランジスタ(III-N FET)で構成されることを特徴とする請求項1に記載のノーマリオフ複合半導体デバイス。
- 前記ノーマリオンIII-窒化物パワートランジスタが、III-窒化物高電子移動度トランジスタ(III-N HEMT)で構成されることを特徴とする請求項1に記載のノーマリオフ複合半導体デバイス。
- 前記LVデバイスが、LVIV族半導体デバイスで構成されることを特徴とする請求項1に記載のノーマリオフ複合半導体デバイス。
- 前記LVデバイスが、LV電界効果トランジスタ(LV FET)で構成されることを特徴とする請求項1に記載のノーマリオフ複合半導体デバイス。
- 前記ノーマリオンIII-窒化物パワートランジスタと前記LVデバイスとが、モノリシック集積されていることを特徴とする請求項1に記載のノーマリオフ複合半導体デバイス。
- アクティブ発振制御を含む複合半導体デバイスであって、
III-窒化物パワートランジスタと;
低電圧(LV)トランジスタとを具え、
前記LVトランジスタのドレインは、前記III-窒化物パワートランジスタのソースに結合され、前記LVトランジスタのソースは、前記複合半導体デバイスの複合ソース端子を提供し、前記LVトランジスタのゲートは、前記複合半導体デバイスの複合ゲート端子を提供し、前記III-窒化物パワートランジスタのドレインは、前記複合半導体デバイスの複合ドレイン端子を提供し、前記III-窒化物パワートランジスタのゲートは、前記LVトランジスタのソースに結合され、
前記LVトランジスタは、ボディ打込み領域の修正により低減された出力抵抗を有して、前記複合半導体デバイスのゲインを約10,000以下にすることを特徴とする複合半導体デバイス。 - 前記III-窒化物パワートランジスタが、III-窒化物電界効果トランジスタ(III-N FET)で構成されることを特徴とする請求項7に記載の複合半導体デバイス。
- 前記III-窒化物パワートランジスタが、III-窒化物高電子移動度トランジスタ(III-N HEMT)で構成されることを特徴とする請求項7に記載の複合半導体デバイス。
- 前記LVトランジスタが、LVIV族半導体トランジスタで構成されることを特徴とする請求項7に記載の複合半導体デバイス。
- 前記LVトランジスタが、LVシリコン電界効果トランジスタ(FET)で構成されることを特徴とする請求項7に記載の複合半導体デバイス。
- 前記LVトランジスタが、LV金属酸化膜半導体FET(LV MOSFET)及びLV金属−絶縁体−半導体FET(LV MISFET)の一方であることを特徴とする請求項7に記載の複合半導体デバイス。
- 前記III-窒化物パワートランジスタと前記LVトランジスタとが、モノリシック集積されていることを特徴とする請求項7に記載の複合半導体デバイス。
- アクティブ発振制御を含む複合半導体デバイスであって、
III-窒化物パワートランジスタと;
低電圧(LV)トランジスタとを具え、
前記LVトランジスタのドレインは前記III-窒化物パワートランジスタのソースに結合され、前記LVトランジスタのソースは、前記複合半導体デバイスの複合ソース端子を提供し、前記LVトランジスタのゲートは、前記複合半導体デバイスの複合ゲート端子を提供し、前記III-窒化物パワートランジスタのドレインは、前記複合半導体デバイスの複合ドレイン端子を提供し、前記III-窒化物パワートランジスタのゲートは、前記LVトランジスタのソースに結合され、
前記LVトランジスタは、酸化物の厚さの修正により低減されたトランスコンダクタンスを有して、前記複合半導体デバイスのゲインを、約10,000以下にすることを特徴とする複合半導体デバイス。 - 前記III-窒化物パワートランジスタが、III-窒化物電界効果トランジスタ(III-N FET)で構成されることを特徴とする請求項14に記載の複合半導体デバイス。
- 前記III-窒化物パワートランジスタが、III-窒化物高電子移動度トランジスタ(III-N HEMT)で構成されることを特徴とする請求項14に記載の複合半導体デバイス。
- 前記LVトランジスタが、LVIV族半導体トランジスタで構成されることを特徴とする請求項14に記載の複合半導体デバイス。
- 前記LVトランジスタが、LVシリコン電界効果トランジスタ(FET)で構成されることを特徴とする請求項14に記載の複合半導体デバイス。
- 前記LVトランジスタが、LV金属酸化膜半導体FET(LV MOSFET)及びLV金属−絶縁体−半導体FET(LV MISFET)の一方であることを特徴とする請求項14に記載の複合半導体デバイス。
- 前記III-窒化物パワートランジスタと前記LVトランジスタとが、モノリシック集積されていることを特徴とする請求項14に記載の複合半導体デバイス。
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