JP2012186324A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012186324A JP2012186324A JP2011048646A JP2011048646A JP2012186324A JP 2012186324 A JP2012186324 A JP 2012186324A JP 2011048646 A JP2011048646 A JP 2011048646A JP 2011048646 A JP2011048646 A JP 2011048646A JP 2012186324 A JP2012186324 A JP 2012186324A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 396
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 444
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 443
- 239000011777 magnesium Substances 0.000 claims abstract description 53
- 239000011575 calcium Substances 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 23
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 20
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 20
- 229910052788 barium Inorganic materials 0.000 claims abstract description 18
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 87
- 229910052717 sulfur Inorganic materials 0.000 claims description 30
- 239000011669 selenium Substances 0.000 claims description 28
- 229910052711 selenium Inorganic materials 0.000 claims description 22
- 229910052714 tellurium Inorganic materials 0.000 claims description 20
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 12
- 239000011593 sulfur Substances 0.000 claims description 12
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 86
- 239000002184 metal Substances 0.000 abstract description 86
- 238000000034 method Methods 0.000 description 80
- 239000000463 material Substances 0.000 description 75
- 230000008569 process Effects 0.000 description 51
- 238000005468 ion implantation Methods 0.000 description 43
- 238000000137 annealing Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 30
- 239000012535 impurity Substances 0.000 description 30
- 239000002019 doping agent Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 17
- 239000000654 additive Substances 0.000 description 13
- 230000000996 additive effect Effects 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 229910005883 NiSi Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910001425 magnesium ion Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】実施形態の半導体装置は、導電性材料を用いた電極240と、導電型がp型の炭化珪素(SiC)半導体部220と、を備えており、かかるp型のSiC半導体部220は、前記第1の電極240に接続され、マグネシウム(Mg)、カルシウム(Ca)、ストロンチウム(Sr)、及びバリウム(Ba)のうちの少なくとも1種類の元素が前記電極との界面部に面密度がピークになるように含有されたことを特徴とする。
【選択図】図1
Description
導電型がn型の炭化珪素(SiC)半導体部を備えており、かかるn型のSiC半導体部は、前記電極に接続され、硫黄(S)、セレン(Se)、及びテルル(Te)のうちの少なくとも1種類の元素が前記電極との界面部に面密度がピークになるように含有されたことを特徴とする。
第1の実施形態について、以下、図面を用いて説明する。
X=(電荷)×(面密度)×(分極の長さ)/誘電率
から計算できる。より詳細に説明すると、
X(ボルト)=(電荷)×(面密度)×(分極の長さ)/誘電率
=(電荷2×1.602×10−19クーロン)×(面密度cm−2)×(分極の長さ×10−8cm)/(比誘電率ε)/[8.854×10−12(fard/m)]
=1.81×10−14(数面密度cm−2単位)×(分極の長さÅ単位)/(比誘電率)
となる。ここでSiC基板中のS、Se、TeやMg、Ca、Sr、Baでは、電荷は2、数面密度が1013cm−2程度、誘電率10である。下限を考えるので、分極の長さは最大値を採用して、10Å程度とする。よって、
X=1.81×10−14×2×1013×10/10=0.36(V)
となる。n型では、0.1V程度にしたいので、0.28×1013cm−2以上が必要であり、p型では、1.7V程度にしたいので、4.7×1013cm−2以上が必要である。これ以下では、必要なシフト量が得られず、抵抗が大きくなってしまう。
第1の実施形態では、(n+)SiC半導体領域230を形成する際に、ドーパントとピン止め材の共ドープを行った場合を説明した。同様に、(p+)SiC半導体領域220を形成する際に、ドーパントとピン止め材の共ドープを行った場合を説明した。第2の実施形態では、スパッタ法を用いて(n+)SiC半導体領域230と(p+)SiC半導体領域220にピン止め材を導入する方法を説明する。
第1の実施形態では、(n−)SiC半導体層202にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。
第2の実施形態では、(n−)SiC半導体層202にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。
上述した各実施形態では、DiMOSFETについて説明した。しかし、適用可能な半導体装置は、これに限るものではない。第5の実施形態では、一例として、IGBT(Insulated Gate Bipolar Transistor)に適用した場合について説明する。
第5の実施形態では、(n+)SiC半導体領域230を形成する際に、ドーパントとピン止め材の共ドープを行った場合を説明した。同様に、(p+)SiC半導体領域220を形成する際に、ドーパントとピン止め材の共ドープを行った場合を説明した。第6の実施形態では、スパッタ法を用いて(n+)SiC半導体領域230と(p+)SiC半導体領域220にピン止め材を導入する方法を説明する。第6の実施形態は、IGBTにおいて、第2の実施形態における構成を適用させた場合に相当する。
第5の実施形態では、(n−)SiC半導体層204にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。第7の実施形態は、IGBTにおいて、第3の実施形態における構成を適用させた場合に相当する。
第2の実施形態では、(n−)SiC半導体層202にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。第8の実施形態は、IGBTにおいて、第4の実施形態における構成を適用させた場合に相当する。
上述したピン止め材を用いて導電性材料とp型SiC或いはn型SiCとのオーミック接合させる技術は、上述した例に限るものではない。第9の実施形態では、ダイオードに使用した場合について一例を説明する。
上述したピン止め材を用いて導電性材料とp型SiC或いはn型SiCとのオーミック接合させる技術は、上述した例に限るものではない。第10の実施形態では、他の半導体装置の一例を説明する。
上述したピン止め材を用いて導電性材料とp型SiC或いはn型SiCとのオーミック接合させる技術は、上述した例に限るものではない。第11の実施形態では、ダイオードに使用した場合について他の一例を説明する。
Claims (9)
- 導電性材料を用いた第1の電極と、
前記第1の電極に接続され、マグネシウム(Mg)、カルシウム(Ca)、ストロンチウム(Sr)、及びバリウム(Ba)のうちの少なくとも1種類の元素が前記電極との界面部に面密度がピークになるように含有された、導電型がp型の第1の炭化珪素(SiC)半導体部と、
を備えたことを特徴とする半導体装置。 - 前記第1の電極に接続され、硫黄(S)、セレン(Se)、及びテルル(Te)のうちの少なくとも1種類の元素が前記電極との界面部に面密度がピークになるように含有された、導電型がn型の第2のSiC半導体部、をさらに備えたことを特徴とする請求項1記載の半導体装置。
- SiC半導体基板と、
前記SiC半導体基板上に形成されたn型のSiC半導体層と、
前記n型のSiC半導体層上の少なくとも一部に選択的に形成され、前記第1と第2のSiC半導体部と接続して配置された、複数のp型の第3のSiC半導体部と、
前記第2〜第3のSiC半導体部上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された第2の電極と、
前記SiC半導体基板の裏面に形成された第3の電極と、
をさらに備えたことを特徴とする請求項2記載の半導体装置。 - 前記第1の電極に接続された、導電型がn型の第2のSiC半導体部と、
SiC半導体基板と、
前記SiC半導体基板上に形成されたn型のSiC半導体層と、
前記n型のSiC半導体層上の少なくとも一部に選択的に形成され、前記第1と第2のSiC半導体部と接続して配置された、複数のp型の第3のSiC半導体部と、
前記第2〜第3のSiC半導体部上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された第2の電極と、
前記SiC半導体基板の裏面に形成された第3の電極と、
をさらに備えたことを特徴とする請求項1記載の半導体装置。 - 前記SiC半導体基板は、導電型がn型であることを特徴とする請求項3又は4記載の半導体装置。
- 前記SiC半導体基板は、導電型がp型であることを特徴とする請求項3又は4記載の半導体装置。
- 前記第1のSiC半導体部は、導電型がp型のSiC半導体基板であることを特徴とする請求項1記載の半導体装置。
- 導電性材料を用いた電極と、
前記電極に接続され、硫黄(S)、セレン(Se)、及びテルル(Te)のうちの少なくとも1種類の元素が前記電極との界面部に面密度がピークになるように含有された、導電型がn型の炭化珪素(SiC)半導体部と、
を備えたことを特徴とする半導体装置。 - 前記SiC半導体部は、導電型がn型のSiC半導体基板であることを特徴とする請求項8記載の半導体装置。
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