JP2012174878A - 半導体装置、及びそれを用いた装置 - Google Patents
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
【解決手段】ショットキ接合と、pn接合を備える半導体装置であって、pn接合は高濃度P型拡散層5とN型拡散層4で形成され、低濃度P型拡散層6と金属電極7により、ショットキ接合が形成され整流領域のpn接合部の降伏電圧を、前記ショットキ接合及びガードリング部Z2のpn接合より低くすることを特徴とする。
【選択図】図1
Description
素子に対して高いサージ電圧が印加されると、素子中で降伏電圧が低い個所から導通するが、本実施例では、整流領域の高濃度P型拡散層5の低濃度N型エピタキシャル層2側の先端には周囲の低濃度N型エピタキシャル層2よりも高不純物濃度を有するN型拡散層4を配置しており、該N型拡散層4は周囲の低濃度N型エピタキシャル層2と比較してpn接合の濃度勾配が大きい。故に降伏電圧については、高濃度P型拡散層5とN型拡散層4との間のpn接合は、ショットキ接合(pn接合がショットキ接合より降伏電圧が低いことは図4参照。)及び高濃度P型拡散層5と低濃度N型エピタキシャル層2の間のpn接合よりも低くなり、高いサージ電圧が印加された場合、最も降伏電圧が低い高濃度P型拡散層5とN型拡散層4との間のpn接合から降伏し、サージ電流が流れることになる。図3ではサージ電圧印加時の様子を模式的に表している。該図に示す様に、サージ電流はN型拡散層4を経由して高濃度P型拡散層5に流れる。従って、ショットキ接合S及びガードリング部のpn接合Z2にはサージ電流は流れない。
本明細書において回転電機系とは、回転子巻線・固定子巻線を有する回転電機と、固定子巻線に接続されるダイオードとを少なくとも具備するものを指す。当然、これ以上の構成が付加されることを排除するものではない。また、上記では回転電機は発電機を意図して記載しているが、他の電源が存在し、上記の回転電機をモータとして負荷駆動用に用いることも可能である。
2 低濃度N型エピタキシャル層
4 N型拡散層
5 高濃度P型拡散層
6 低濃度P型拡散層
7 金属電極
8 裏面電極層
9 シリコン側面
31,32,33 絶縁膜(シリコン酸化膜)
41 チャネルストッパ
42〜47 ダイオード
48 回転子巻線
49 固定子巻線
50 レギュレータ
51 負荷
52 バッテリ
120 半導体チップ
121,122 半田(接合材料)
130 支持電極体
131 台座
132 溝
133 基体
134 外周側壁
135 リード電極
136 外周側壁
137 樹脂
138 放熱板
Claims (12)
- ショットキ接合と、pn接合を備える半導体装置であって、
前記pn接合は整流領域とガードリング部に設けられており、
前記整流領域のpn接合部の降伏電圧を、前記ショットキ接合及び前記ガードリング部のpn接合より低くすることを特徴とする半導体装置。 - 請求項1に記載の半導体装置であって、
前記整流領域のpn接合部は、pまたはnのいずれかの導電型を有する第1の拡散層と、該pまたはnのいずれかの導電型と逆の導電型の層とが接合されており、前記整流領域のpn接合部の接合面のうち、前記逆の導電型の層の側には、
該逆の導電型の層と同じ導電型であって、かつ、該逆の導電型の層より高不純物濃度の第2の拡散層が備えてあることを特徴とする半導体装置。 - 請求項1又は2に記載の半導体装置であって、
前記整流領域のpn接合部は複数存在することを特徴とする半導体装置。 - 請求項1ないし3のいずれか一つに記載の半導体装置であって、
前記ショットキ接合を構成する接合面の半導体側に更にpn接合を設けたことを特徴とする半導体装置。 - 請求項1ないし4のいずれか一つに記載の半導体装置であって、
前記ガードリング部の外側にはチャネルストッパが配置されていることを特徴とする半導体装置。 - 請求項1ないし5のいずれか一つに記載の半導体装置であって、
前記ショットキ接合を構成する接合面の半導体側のシート抵抗は40kΩ/□以上であることを特徴とする半導体装置。 - 請求項1ないし6のいずれか一つに記載の半導体装置であって、
前記ショットキ接合を構成する電極がMoSi2であることを特徴とする半導体装置。 - 請求項1ないし7のいずれか一つに記載の半導体装置と、該半導体装置の両端に設けられる電極とを備えるオルタネータダイオードであって、
前記半導体装置と前記電極とを接続を半田接続し、
前記半導体装置及び前記半田は樹脂封止されていることを特徴とするオルタネータダイオード。 - 請求項8に記載のオルタネータダイオードは、
更に前記半導体装置及び前記樹脂を支持する支持体を備えており、
該支持体は前記樹脂を保持するための溝を備えていることを特徴とするオルタネータダイオード。 - 回転子及び該回転子に所定の間隙を空けて対向配置される固定子とを備える回転電機と、前記固定子に設けられる固定子巻線に接続され、交流電流を直流電流に切り替える請求項1ないし7のいずれか一つに記載の半導体装置を有する整流用のダイオードを備えることを特徴とする回転電機系。
- 請求項10に記載の回転電機系であって、
前記固定子は回転子巻線を有しており、該回転子巻線は該回転子巻線に印加される電圧を制御するレギュレータを備え、
該レギュレータは、前記ダイオードの直流側と電気的に接続されていることを特徴とする回転電機系。 - 請求項10または11に記載の回転電機系と、該回転電機系と電気的に接続される負荷とを備えていることを特徴とする車両。
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JP2011035304A JP2012174878A (ja) | 2011-02-22 | 2011-02-22 | 半導体装置、及びそれを用いた装置 |
CN2012100238951A CN102646723A (zh) | 2011-02-22 | 2012-02-03 | 半导体装置及使用了该半导体装置的装置 |
US13/368,758 US20120212164A1 (en) | 2011-02-22 | 2012-02-08 | Semiconductor device and device with use of it |
EP20120154909 EP2492964A1 (en) | 2011-02-22 | 2012-02-10 | Semiconductor device and device with use of it |
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US (1) | US20120212164A1 (ja) |
EP (1) | EP2492964A1 (ja) |
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US9224729B2 (en) | 2013-07-19 | 2015-12-29 | Fujitsu Semiconductor Limited | Semiconductor device |
US9685442B2 (en) | 2014-11-21 | 2017-06-20 | Fujitsu Semiconductor Limited | Semiconductor device and method of manufacturing the same |
JP2019054193A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
US10343117B2 (en) * | 2009-02-27 | 2019-07-09 | Corning Incorporated | Ceria-zirconia-zeolite catalyst body |
WO2021079735A1 (ja) | 2019-10-24 | 2021-04-29 | 株式会社日立パワーデバイス | 半導体装置及びそれを用いた整流素子、オルタネータ |
JP2021153096A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社東芝 | 半導体装置 |
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US8786361B1 (en) | 2013-03-08 | 2014-07-22 | Hamilton Sundstrand Corporation | High accuracy analog interface processing circuit |
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CN104282732B (zh) | 2013-07-01 | 2017-06-27 | 株式会社东芝 | 半导体装置 |
JP5940500B2 (ja) | 2013-09-11 | 2016-06-29 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN105679836B (zh) * | 2016-03-23 | 2022-07-12 | 北海惠科半导体科技有限公司 | 一种超低电容tvs二极管结构及其制备方法 |
US11508808B2 (en) * | 2018-10-11 | 2022-11-22 | Actron Technology Corporation | Rectifier device, rectifier, generator device, and powertrain for vehicle |
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2012
- 2012-02-03 CN CN2012100238951A patent/CN102646723A/zh active Pending
- 2012-02-08 US US13/368,758 patent/US20120212164A1/en not_active Abandoned
- 2012-02-10 EP EP20120154909 patent/EP2492964A1/en not_active Withdrawn
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JPH03250670A (ja) * | 1990-02-28 | 1991-11-08 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH0538114A (ja) * | 1991-07-25 | 1993-02-12 | Nikko Denki Kogyo Kk | 車輌用交流発電機 |
JPH10116999A (ja) * | 1996-10-14 | 1998-05-06 | Hitachi Ltd | 定電圧ショットキーダイオード及びその製造方法 |
JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
JP2003338620A (ja) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2009081376A (ja) * | 2007-09-27 | 2009-04-16 | Sanken Electric Co Ltd | 半導体装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10343117B2 (en) * | 2009-02-27 | 2019-07-09 | Corning Incorporated | Ceria-zirconia-zeolite catalyst body |
US9224729B2 (en) | 2013-07-19 | 2015-12-29 | Fujitsu Semiconductor Limited | Semiconductor device |
US9431393B2 (en) | 2013-07-19 | 2016-08-30 | Fujitsu Semiconductor Limited | Semiconductor device |
US9685442B2 (en) | 2014-11-21 | 2017-06-20 | Fujitsu Semiconductor Limited | Semiconductor device and method of manufacturing the same |
JP2019054193A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
WO2021079735A1 (ja) | 2019-10-24 | 2021-04-29 | 株式会社日立パワーデバイス | 半導体装置及びそれを用いた整流素子、オルタネータ |
JP2021153096A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社東芝 | 半導体装置 |
JP7305591B2 (ja) | 2020-03-24 | 2023-07-10 | 株式会社東芝 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102646723A (zh) | 2012-08-22 |
US20120212164A1 (en) | 2012-08-23 |
EP2492964A1 (en) | 2012-08-29 |
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