JP2012169545A - 半導体装置、電源装置、増幅器及び半導体装置の製造方法 - Google Patents
半導体装置、電源装置、増幅器及び半導体装置の製造方法 Download PDFInfo
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- JP2012169545A JP2012169545A JP2011031109A JP2011031109A JP2012169545A JP 2012169545 A JP2012169545 A JP 2012169545A JP 2011031109 A JP2011031109 A JP 2011031109A JP 2011031109 A JP2011031109 A JP 2011031109A JP 2012169545 A JP2012169545 A JP 2012169545A
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Abstract
【解決手段】基板10の上方に形成された半導体層20〜23と、前記半導体層20〜23上に形成された絶縁膜31,32と、前記絶縁膜上31,32に形成された電極41と、を有し、前記絶縁膜31,32は、前記電極41の側における膜応力よりも、前記半導体層20〜23の側における膜応力が低いことを特徴とする半導体装置により上記課題を解決する。
【選択図】図6
Description
最初に、半導体装置に形成されるゲート絶縁膜について説明する。具体的には、半導体装置であるHEMTと同様の構造を有する半導体素子を作製し検討を行なった。作製した半導体素子は、図1に示すように、シリコンからなる基板1上に、バッファ層2、電子走行層3、スペーサ層4、電子供給層5、キャップ層6を積層形成し、更に、キャップ層6上に絶縁膜7を形成したものである。電子走行層3、スペーサ層4、電子供給層5、キャップ層6は、有機金属気相成長(MOVPE:Metal-Organic Vapor Phase Epitaxy)法により形成されている。バッファ層2は電子走行層3等をエピタキシャル成長させるために基板1上に形成されているものであり、基板1上にバッファ層2を形成することにより、バッファ層2上に電子走行層3等をエピタキシャル成長させることができる。
次に、第1の実施の形態における半導体装置について説明する。本実施の形態における半導体装置の構造を図6に示す。本実施の形態における半導体装置はHEMTであり、半導体等からなる基板10上にバッファ層20が形成されており、バッファ層20上に、半導体層となる電子走行層21、電子供給層22、キャップ層23がエピタキシャル成長により積層して形成されている。また、キャップ層23上には絶縁膜30が形成されており、絶縁膜30上にはゲート電極41が形成されており、ソース電極42及びドレイン電極43は電子走行層21と接続されて形成されている。更に、露出している絶縁膜30の上には、絶縁体からなる保護膜50が形成されている。
次に、図8及び図9に基づき本実施の形態における半導体装置の製造方法について説明する。
次に、アモルファスカーボン膜を成膜するためのFCA法について説明する。図10に、FCA法に用いられるFCA成膜装置の構造を示す。このFCA成膜装置は、プラズマ発生部110、プラズマ分離部120、パーティクルトラップ部130、プラズマ移送部140、成膜チャンバー150を有している。プラズマ発生部110、プラズマ分離部120及びパーティクルトラップ部130は、いずれも筒状に形成されており、この順で連結されている。プラズマ移送部140も筒状に形成されており、一方の端部はプラズマ分離部120に略垂直に接続されており、他方の端部は、成膜チャンバー150に接続されている。成膜チャンバー150の内部には、成膜対象となる基板等151を設置するためのステージ152が設けられている。
次に、第2の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体装置の保護膜を第1のアモルファスカーボン膜と第2のアモルファスカーボン膜を含む膜により形成したものである。
次に、第3の実施の形態について説明する。本実施の形態は、ゲート絶縁膜となる絶縁膜を窒素が添加されたアモルファスカーボン膜により形成した半導体装置である。
次に、第4の実施の形態について説明する。
図13に基づき本実施の形態における半導体装置について説明する。本実施の形態における半導体装置は、HEMTであり、半導体等からなる基板310上にバッファ層320が形成されており、バッファ層320上に、電子走行層321、電子供給層322、キャップ層323がエピタキシャル成長により積層して形成されている。また、ソース電極342及びドレイン電極343は電子走行層321と接続されて形成されており、ゲート電極341は、キャップ層323及び電子供給層322の一部を除去することにより形成された開口部内に絶縁膜330を介して形成されている。尚、絶縁膜330はキャップ層323上にも形成されており、絶縁膜330の上には、絶縁体からなる保護膜350が形成されている。
次に、図14及び図15に基づき本実施の形態における半導体装置の製造方法について説明する。
次に、第5の実施の形態について説明する。本実施の形態は、半導体デバイス、電源装置及び高周波増幅器である。
(付記1)
基板の上方に形成された半導体層と、
前記半導体層上に形成された絶縁膜と、
前記絶縁膜上に形成された電極と、
を有し、
前記絶縁膜は、前記電極の側における膜応力よりも、前記半導体層の側における膜応力が低いことを特徴とする半導体装置。
(付記2)
前記絶縁層は、第1の絶縁膜上に第2の絶縁膜が積層されているものであって、
前記第1の絶縁膜は、前記第2の絶縁膜よりも膜応力が低いことを特徴とする付記1に記載の半導体装置。
(付記3)
前記絶縁膜は、炭素を主成分とするアモルファス膜により形成されているものであることを特徴とする付記1または2に記載の半導体装置。
(付記4)
前記絶縁膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記絶縁膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記ゲート電極の側よりも、前記半導体層の側が高いことを特徴とする付記1に記載の半導体装置。
(付記5)
前記絶縁膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記第1の絶縁膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記第2の絶縁膜に含まれる濃度よりも高いことを特徴とする付記2に記載の半導体装置。
(付記6)
前記第2の絶縁膜における膜密度は、2.6g/cm3以上、3.56g/cm3以下であることを特徴とする付記5に記載の半導体装置。
(付記7)
基板の上方に形成された半導体層と、
前記半導体層の上方に形成された電極と、
前記半導体層の上方に形成された保護膜と、
を有し、
前記保護膜は、前記半導体層に近い側における膜応力が、前記半導体層から離れた側における膜応力よりも、低いことを特徴とする半導体装置。
(付記8)
前記保護膜は、第1の保護膜上に第2の保護膜が積層されたものであって、
前記第1の保護膜は、前記第2の保護膜よりも膜応力が低いことを特徴とする付記7に記載の半導体装置。
(付記9)
前記保護膜は、炭素を主成分とするアモルファス膜により形成されているものであることを特徴とする付記7または8に記載の半導体装置。
(付記10)
前記保護膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記保護膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記半導体層に近い側よりも、前記半導体層から離れた側が高いことを特徴とする付記7に記載の半導体装置。
(付記11)
前記保護膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記第1の保護膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記第2の保護膜に含まれる濃度よりも高いことを特徴とする付記8に記載の半導体装置。
(付記12)
前記第2の保護膜における膜密度は、2.6g/cm3以上、3.56g/cm3以下であることを特徴とする付記10または11に記載の半導体装置。
(付記13)
前記電極はゲート電極であり、
前記半導体層は、第1の半導体層と、前記第1の半導体層の上方に形成された第2の半導体層とを含むものであって、
前記第1の半導体層または第2の半導体層に接して形成されたソース電極及びドレイン電極を有することを特徴とする付記1から12のいずれかに記載の半導体装置。
(付記14)
前記電極はゲート電極であり、
前記半導体層は、第1の半導体層と、前記第1の半導体層の上方に形成された第2の半導体層とを含むものであって、
前記第1の半導体層または第2の半導体層に接して形成されたソース電極及びドレイン電極を有し、
前記第2の半導体層には開口部が形成されており、
前記ゲート電極は前記開口部内に形成されていることを特徴とする付記1から12のいずれかに記載の半導体装置。
(付記15)
前記第1の半導体層は、GaNを含むものであって、前記第2の半導体層は、AlGaNを含むものであることを特徴とする付記13または14に記載の半導体装置。
(付記16)
付記1から15のいずれかに記載の半導体装置を有することを特徴とする電源装置。
(付記17)
付記1から15のいずれかに記載の半導体装置を有することを特徴とする増幅器。
(付記18)
基板の上方に半導体層を形成する工程と、
前記半導体層上に炭素を主成分とするアモルファス膜を含む絶縁膜を形成する工程と、
前記絶縁膜上に電極を形成する工程と、
を有し、
前記炭素を主成分とするアモルファス膜を含む絶縁膜を形成する工程は、窒素が添加された炭素を主成分とするアモルファス膜となる第1の絶縁膜を成膜する工程と、
前記第1の絶縁膜上に、前記第1の絶縁膜よりも窒素の濃度が低い炭素を主成分とするアモルファス膜となる第2の絶縁膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記19)
基板の上方に半導体層を形成する工程と、
前記半導体層の上方に電極を形成する工程と、
前記半導体層の上方に炭素を主成分とするアモルファス膜を含む保護膜を形成する工程と、
を有し、
前記保護膜を形成する工程は、窒素が添加された炭素を主成分とするアモルファス膜となる第1の保護膜を成膜する工程と、
前記第1の保護膜上に、前記第1の保護膜よりも窒素の濃度が低い炭素を主成分とするアモルファス膜となる第2の保護膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記20)
前記炭素を主成分とするアモルファス膜は、アーク蒸着法により形成されるものであることを特徴とする付記18または19に記載の半導体装置の製造方法。
20 バッファ層
21 電子走行層(第1の半導体層)
21a 2DEG
22 電子供給層(第2の半導体層)
23 キャップ層
30 絶縁膜
31 第1のアモルファスカーボン膜
32 第2のアモルファスカーボン膜
41 ゲート電極
42 ソース電極
43 ドレイン電極
50 保護膜
Claims (10)
- 基板の上方に形成された半導体層と、
前記半導体層上に形成された絶縁膜と、
前記絶縁膜上に形成された電極と、
を有し、
前記絶縁膜は、前記電極の側における膜応力よりも、前記半導体層の側における膜応力が低いことを特徴とする半導体装置。 - 前記絶縁層は、第1の絶縁膜上に第2の絶縁膜が積層されているものであって、
前記第1の絶縁膜は、前記第2の絶縁膜よりも膜応力が低いものであり、
前記絶縁膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記第1の絶縁膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記第2の絶縁膜に含まれる濃度よりも高いことを特徴とする請求項1に記載の半導体装置。 - 基板の上方に形成された半導体層と、
前記半導体層の上方に形成された電極と、
前記半導体層の上方に形成された保護膜と、
を有し、
前記保護膜は、前記半導体層に近い側における膜応力が、前記半導体層から離れた側における膜応力よりも、低いことを特徴とする半導体装置。 - 前記保護膜は、第1の保護膜上に第2の保護膜が積層されたものであって、
前記第1の保護膜は、前記第2の保護膜よりも膜応力が低いものであり、
前記保護膜は、炭素を主成分とするアモルファス膜により形成されているものであって、
前記第1の保護膜に含まれる窒素、酸素、水素及びフッ素のうち、いずれか1の濃度が、前記第2の保護膜に含まれる濃度よりも高いことを特徴とする請求項3に記載の半導体装置。 - 前記電極はゲート電極であり、
前記半導体層は、第1の半導体層と、前記第1の半導体層の上方に形成された第2の半導体層とを含むものであって、
前記第1の半導体層または第2の半導体層に接して形成されたソース電極及びドレイン電極を有することを特徴とする請求項1から4のいずれかに記載の半導体装置。 - 前記電極はゲート電極であり、
前記半導体層は、第1の半導体層と、前記第1の半導体層の上方に形成された第2の半導体層とを含むものであって、
前記第1の半導体層または第2の半導体層に接して形成されたソース電極及びドレイン電極を有し、
前記第2の半導体層には開口部が形成されており、
前記ゲート電極は前記開口部内に形成されていることを特徴とする請求項1から4のいずれかに記載の半導体装置。 - 請求項1から6のいずれかに記載の半導体装置を有することを特徴とする電源装置。
- 請求項1から6のいずれかに記載の半導体装置を有することを特徴とする増幅器。
- 基板の上方に半導体層を形成する工程と、
前記半導体層上に炭素を主成分とするアモルファス膜を含む絶縁膜を形成する工程と、
前記絶縁膜上に電極を形成する工程と、
を有し、
前記炭素を主成分とするアモルファス膜を含む絶縁膜を形成する工程は、窒素が添加された炭素を主成分とするアモルファス膜となる第1の絶縁膜を成膜する工程と、
前記第1の絶縁膜上に、前記第1の絶縁膜よりも窒素の濃度が低い炭素を主成分とするアモルファス膜となる第2の絶縁膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 基板の上方に半導体層を形成する工程と、
前記半導体層の上方に電極を形成する工程と、
前記半導体層の上方に炭素を主成分とするアモルファス膜を含む保護膜を形成する工程と、
を有し、
前記保護膜を形成する工程は、窒素が添加された炭素を主成分とするアモルファス膜となる第1の保護膜を成膜する工程と、
前記第1の絶縁膜上に、前記第1の保護膜よりも窒素の濃度が低い炭素を主成分とするアモルファス膜となる第2の保護膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
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